Microchip Technology JAN1N6163AUS/TR
- Part No.:
- JAN1N6163AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6163AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JAN1N6163AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 56.0 V working peak standoff voltage (VWM), 71.3 V minimum breakdown voltage (V(BR)) at 20 mA, and clamps transients to 103.1 V at 14.5 A (10/1000 µs pulse), delivering 1500 W peak pulse power for lightning surge and ESD protection in avionics power rails.
For engineers reviewing the JAN1N6163AUS/TR datasheet, JAN1N6163AUS/TR pinout, JAN1N6163AUS/TR application, or JAN1N6163AUS/TR equivalent, key selection criteria include its military-grade reliability (JAN qualification), hard-glass SQ-MELF package, bidirectional clamping behavior, 103.1 V clamping voltage at rated IPP, and compatibility with IEC61000-4-2/4-4/4-5 transient immunity standards.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds for high-reliability junction integrity. Its voidless hermetic glass construction ensures stable performance across -55 °C to +175 °C junction temperature range and eliminates moisture-induced failure modes common in plastic-packaged suppressors.
The device delivers 1500 W peak pulse power under 10/1000 µs waveform while maintaining 5.0 µA maximum standby current at VWM and 0.100 %/°C temperature coefficient of breakdown voltage - enabling predictable clamping behavior across wide thermal operating envelopes in aerospace and defense systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 56.0 V - Maximum continuous DC or repetitive peak reverse voltage the device blocks without conduction. |
| V(BR) min | 71.3 V @ 20 mA - Minimum voltage at which the device enters controlled avalanche breakdown, defining turn-on threshold. |
| VC @ IPP | 103.1 V @ 14.5 A (10/1000 µs) - Clamped voltage seen by protected circuit during worst-case surge event. |
| PPP | 1500 W - Peak transient energy absorption capability, critical for lightning secondary effects per IEC61000-4-5. |
| ID @ VWM | 5 µA - Leakage current at rated standoff voltage, ensuring minimal power loss in standby operation. |
| αV(BR) | 0.100 %/°C - Predictable drift of breakdown voltage with temperature, supporting thermal design margining. |
| TJ/TSTG | -55 °C to +175 °C - Extended operational and storage range required for military vehicle, satellite, and radar subsystems. |
Pinout & Package
Package: SQ-MELF (Square-end-cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode | Bidirectional terminal pair | No polarity marking - either end serves as anode or cathode depending on transient polarity; symmetric clamping in both directions. |
| End Cap | Thermal interface | Primary heat path to PCB; RθJEC = 5.0 °C/W enables reliable power dissipation in high-density layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock, meeting MIL-PRF-19500/516 reliability requirements. |
| Voidless hermetic seal | Eliminates internal moisture and contaminants, preventing parametric shift or catastrophic failure in humid or vacuum environments. |
| JAN-level qualification | Validated to MIL-PRF-19500/516 screening including burn-in, temperature cycling, and hermeticity testing for mission-critical use. |
| SQ-MELF geometry | Square-end-cap profile improves automated placement accuracy and solder joint reliability vs. round MELF variants. |
Applications
| Avionics Power Distribution | Ground Vehicle Control Units |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in flight control computers against load dump and induced lightning surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamping transient overvoltage before it reaches downstream DC-DC converters and microcontrollers. Use Value: Maintains 56.0 V standoff while limiting clamped voltage to 103.1 V, preserving input stage reliability under MIL-STD-461 RS103 and DO-160 Section 22 Level 3 threats. | Use Scenario: Surge suppression on CAN bus power lines in armored vehicle engine control modules exposed to EMP and alternator transients. IC Role / Device Role / Timing Role: Standoff and clamp element placed between power rail and ground, absorbing 1500 W pulses without degradation. Use Value: Withstands 14.5 A peak pulse current and 0.100 %/°C V(BR) drift, ensuring consistent protection across -40 °C to +125 °C under hood conditions. |
| Tactical Radio Front-Ends | Satellite Payload Power Interfaces |
Use Scenario: Input protection for RF power amplifier bias supplies in manpack radios subjected to ESD per MIL-STD-883 Method 3015.7. IC Role / Device Role / Timing Role: Fast-response transient suppressor placed directly at connector entry point to shunt ESD before reaching sensitive GaN amplifiers. Use Value: 5 µA leakage at 56.0 V VWM prevents bias current disruption; 103.1 V clamping ensures amplifier gate oxide remains below breakdown threshold. | Use Scenario: Secondary surge protection on regulated 50 V bus feeding star tracker electronics in LEO satellites. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing single-event transients induced by proton flux in low-earth orbit. Use Value: Inherent radiation hardness per MicroNote 050 and -55 °C to +175 °C operation support long-term mission viability without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6163US | No "A" suffix → 5% higher VC (108.3 V), 5% lower V(BR) min (67.7 V), 5% lower IPP (13.8 A) | Reduced clamping margin and lower surge current handling; suitable only where tighter VWM tolerance is not required | Select JAN1N6163AUS/TR when guaranteed 71.3 V V(BR) and 103.1 V VC are mandatory for system-level compliance. |
| JANTX1N6163AUS | JANTX qualification level - additional screening beyond JAN (e.g., extended life test, lot acceptance test) | Higher cost and longer lead time; required only for programs specifying JANTX-level procurement | Choose JAN1N6163AUS/TR for standard JAN reliability without JANTX overhead unless contract mandates higher screening. |
Compared with 1N6163US and JANTX1N6163AUS, JAN1N6163AUS/TR delivers the precise 71.3 V V(BR) and 103.1 V VC needed for deterministic clamping design, balances military reliability with procurement efficiency, and avoids unnecessary over-specification or performance compromise.
Availability
JAN1N6163AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, ground vehicle control units, tactical radio front-ends, and satellite payload power interfaces requiring stable component supply under extended temperature and radiation-hardened conditions.
Supply support for JAN1N6163AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and military-qualified components.
The JAN1N6163AUS/TR belongs to Microsemi's legacy MIL-PRF-19500/516-qualified TVS family, engineered specifically for fail-safe transient suppression in mission-critical platforms where hermeticity, thermal stability, and long-term parameter consistency are non-negotiable.
FAQ
What is the clamping voltage of JAN1N6163AUS/TR and under what test condition is it specified?
JAN1N6163AUS/TR has a maximum clamping voltage (VC) of 103.1 V, measured at a peak pulse current (IPP) of 14.5 A using the standardized 10/1000 µs double-exponential surge waveform. This value defines the upper voltage limit imposed on protected circuitry during worst-case transient events and is guaranteed per MIL-PRF-19500/516 test requirements.
Is JAN1N6163AUS/TR unidirectional or bidirectional, and how does that affect its circuit placement?
JAN1N6163AUS/TR is a bidirectional TVS with no polarity marking, meaning it conducts symmetrically for both positive and negative transients. This allows placement across any two nodes requiring transient suppression - such as power-to-ground or differential signal lines - without orientation constraints, simplifying layout and reducing BOM count versus unidirectional alternatives.
What does the "A" suffix in JAN1N6163AUS/TR signify compared to JAN1N6163US?
The "A" suffix in JAN1N6163AUS/TR indicates tighter electrical tolerances: it guarantees a minimum breakdown voltage of 71.3 V (vs. 67.7 V for the non-A version), a clamping voltage of 103.1 V (vs. 108.3 V), and a peak pulse current of 14.5 A (vs. 13.8 A). These tighter specs ensure more predictable and robust transient suppression in safety-critical designs.
Does JAN1N6163AUS/TR meet IEC61000-4-5 for lightning surge immunity?
Yes, JAN1N6163AUS/TR is explicitly rated for protection against secondary effects of lightning per select levels of IEC61000-4-5, enabled by its 1500 W peak pulse power rating and 10/1000 µs waveform capability. Its 103.1 V clamping voltage at 14.5 A ensures downstream circuitry remains within safe operating limits during 4 kV or higher combination wave surges.
What is the thermal resistance and maximum junction temperature specification for JAN1N6163AUS/TR?
JAN1N6163AUS/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W and a maximum junction/storage temperature range of -55 °C to +175 °C. This enables direct thermal coupling to the PCB via its end caps and supports operation in extreme environments such as aircraft bays, armored vehicle engine compartments, and space-based electronics.
JAN1N6163AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 56V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103.1V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6163AUS/TR FAQ
1.How can I place an order for JAN1N6163AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6163AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6163AUS/TR reliable?
The price and inventory of JAN1N6163AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6163AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6163AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6163AUS/TR transactions.
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4.How is shipping managed for JAN1N6163AUS/TR?
JAN1N6163AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6163AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6163AUS/TR?
For technical support, including JAN1N6163AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6163AUS/TR requirements.
6.How does Aetrix verify that JAN1N6163AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6163AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6163AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6163AUS/TR?
All JAN1N6163AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6163AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6163AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6163AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6163AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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