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Microchip Technology JAN1N6163US/TR
- Part No.:
- JAN1N6163US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6163US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,328
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Product details
Overview
JAN1N6163US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 56.0 V working standoff voltage (VWM), 71.3 V minimum breakdown voltage (V(BR)), and 103.1 V clamping voltage (VC) at 14.5 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates across –55 °C to +175 °C junction temperature range, deployed in high-reliability military avionics power rail protection.
For engineers reviewing the JAN1N6163US/TR datasheet, JAN1N6163US/TR pinout, JAN1N6163US/TR application, or JAN1N6163US/TR equivalent, key selection criteria include its MIL-qualified bidirectional clamping behavior, hard-glass hermetic package robustness, Category 1 metallurgical bonds, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced surge immunity in safety-critical systems.
Technical Context
This TVS operates as a voltage-clamped shunt protector: when transient voltage exceeds V(BR) = 71.3 V, it avalanches into low-impedance conduction, limiting cathode-to-anode voltage to VC = 103.1 V at IPP = 14.5 A. Its bidirectional symmetry enables protection of AC-coupled or floating signal/power lines without polarity concerns.
Constructed with voidless hermetic glass encapsulation and internal tungsten slugs, the device achieves RθJEC = 5.0 °C/W thermal resistance and withstands solder reflow up to 260 °C for 10 s. It exhibits αV(BR) = 0.100 %/°C temperature coefficient and maintains <5 µA standby current at VWM = 56.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 56.0 V - Maximum continuous DC or repetitive peak voltage the device blocks without clamping |
| V(BR) min | 71.3 V @ 20 mA - Minimum voltage at which avalanche conduction begins, defining turn-on threshold |
| VC @ IPP | 103.1 V @ 14.5 A - Clamped voltage during 10/1000 µs surge, directly limiting downstream circuit stress |
| PPP | 1500 W - Peak transient energy absorption capability under standardized impulse waveform |
| ID @ VWM | ≤5 µA - Leakage current at rated standoff voltage, ensuring minimal power loss in standby |
| TJ Range | –55 °C to +175 °C - Full operational junction temperature range supporting extreme-environment deployment |
| RθJEC | 5.0 °C/W - Thermal resistance from junction to end cap, critical for power derating in high-temp PCB layouts |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" (SQ-MELF) surface-mount package with tin/lead-plated copper terminals; dimensions: BD = 4.65–5.13 mm, BL = 5.21–6.22 mm, ECT = 0.48–0.71 mm; weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; either end functions identically as cathode or anode depending on transient polarity |
| End Cap (both ends) | Thermal & electrical interface | Directly contacts PCB pads for heat dissipation and low-inductance surge current path |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables symmetric transient suppression on AC, differential, or floating nodes without external diode pairing |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risks over decades of field operation in humid or vacuum environments |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, thermal cycling, and radiation exposure per MIL-PRF-19500/516 |
| MIL-PRF-19500/516 JAN qualification | Validates reliability for mission-critical applications including aerospace, defense electronics, and nuclear instrumentation |
Applications
| Avionics Power Distribution | Ground Vehicle ECUs |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in airborne navigation computers against load dump and induced lightning surges. IC Role / Device Role / Timing Role: Shunt TVS clamping transient overvoltage before it reaches DC-DC converters and FPGA power rails. Use Value: Limits voltage to ≤103.1 V during 14.5 A surges, preventing latch-up or gate oxide damage in downstream silicon. | Use Scenario: Safeguarding CAN transceiver power pins in military tactical vehicle control units exposed to ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Bidirectional voltage clamp absorbing reverse-polarity and surge events on unregulated 24 V supply lines. Use Value: Maintains <5 µA leakage at 56 V nominal, avoiding battery drain while surviving 1500 W transients without degradation. |
| Spacecraft Payload Interfaces | Nuclear Instrumentation Systems |
Use Scenario: Shielding LVDS serializer/deserializer I/O power domains from ESD and single-event transients in LEO orbit. IC Role / Device Role / Timing Role: Hermetically sealed TVS providing radiation-hardened transient immunity per MicroNote 050. Use Value: Withstands >100 krad(Si) TID and retains V(BR) stability due to Category 1 bonds and hard-glass construction. | Use Scenario: Securing analog front-end sensor bias supplies in reactor monitoring equipment subject to EMP and switching transients. IC Role / Device Role / Timing Role: High-reliability shunt protector maintaining stable clamping performance after 1000+ surge events. Use Value: Delivers consistent 103.1 V clamping across –55 °C to +175 °C, enabling operation inside containment vessels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6162US/TR | VWM = 51.7 V, V(BR) min = 64.6 V, VC = 97.1 V @ 15.4 A - lower clamping voltage but reduced standoff margin | Better suited for 24 V systems where tighter clamping headroom is required | Select when system max operating voltage is ≤51.7 V and lower VC improves downstream component margin |
| JAN1N6164US/TR | VWM = 62.2 V, V(BR) min = 77.9 V, VC = 112.8 V @ 13.3 A - higher standoff and breakdown, slightly higher clamping | Preferred for 48 V industrial buses requiring extended voltage margin before clamping | Choose when design requires ≥62 V continuous operation and can accommodate 112.8 V transient ceiling |
Compared with JAN1N6163US/TR, JAN1N6162US/TR offers tighter clamping at lower voltage rating, while JAN1N6164US/TR extends standoff range for higher-bus applications-neither is pin-compatible due to distinct SQ-MELF dimensional tolerances and thermal slug placement, requiring layout verification.
Availability
JAN1N6163US/TR is available at Aetrix Electronics and suitable for avionics power distribution, ground vehicle ECUs, spacecraft payload interfaces, and nuclear instrumentation systems requiring stable component supply with full MIL-qualified traceability.
Supply support for JAN1N6163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance, long-term stability, and military qualification.
The JAN1N6163US/TR belongs to Microsemi's MIL-PRF-19500/516-qualified TVS family, engineered specifically for fail-safe transient suppression in mission-critical systems where zero-tolerance for protection failure is mandated.
FAQ
What is the maximum clamping voltage of JAN1N6163US/TR under standard test conditions?
The maximum clamping voltage (VC) of JAN1N6163US/TR is 103.1 V, measured at 14.5 A peak pulse current (IPP) using a 10/1000 µs double-exponential waveform. This value is guaranteed per the manufacturer's electrical characteristics table and defines the upper voltage limit imposed on protected circuits during surge events. The JAN1N6163US/TR maintains this clamping performance across its full operating temperature range and after repeated surge exposures, provided thermal limits are observed.
Is JAN1N6163US/TR suitable for bidirectional signal line protection?
Yes, JAN1N6163US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior for positive- and negative-going transients, making it suitable for protecting AC-coupled data lines, differential pairs like RS-485 or CAN, and floating power domains. The JAN1N6163US/TR does not require orientation during placement and suppresses surges regardless of voltage polarity relative to ground.
Does JAN1N6163US/TR meet IEC61000-4-5 for lightning surge immunity?
Yes, JAN1N6163US/TR is specified to provide protection from secondary effects of lightning per select levels of IEC61000-4-5, as stated in the official application/benefits section. Its 1500 W peak pulse power rating and 103.1 V clamping voltage enable compliance with Level 3 (1 kV line-to-earth, 2 kV line-to-line) and Level 4 (2 kV line-to-earth, 4 kV line-to-line) surge testing when properly implemented with appropriate PCB layout and series impedance. The JAN1N6163US/TR achieves this without degradation across its qualified temperature range.
What is the thermal resistance specification for JAN1N6163US/TR?
JAN1N6163US/TR has a thermal resistance from junction to end cap (RθJEC) of 5.0 °C/W, as confirmed in the Maximum Ratings table. This parameter governs how effectively heat generated during surge conduction transfers from the silicon junction to the device's end caps-and subsequently to the PCB pads. Designers must use this value, not RθJA, for thermal derating calculations in constrained airflow or high-temperature environments, since the JAN1N6163US/TR relies primarily on end-cap conduction rather than ambient convection.
How does the JAN1N6163US/TR differ from commercial-grade 1N6163AUS?
JAN1N6163US/TR is the JAN-level military-qualified version per MIL-PRF-19500/516, featuring stricter screening, enhanced process controls, and guaranteed performance across –55 °C to +175 °C. In contrast, commercial 1N6163AUS lacks burn-in, radiation hardness validation, and extended temperature testing. The JAN1N6163US/TR also uses tin/lead plating (vs. RoHS matte-tin on commercial versions) and carries full traceability documentation required for defense contracts-key distinctions that make JAN1N6163US/TR mandatory for certified high-reliability deployments.
JAN1N6163US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 56V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103.1V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6163US/TR FAQ
1.How can I place an order for JAN1N6163US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6163US/TR reliable?
The price and inventory of JAN1N6163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6163US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6163US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6163US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6163US/TR?
JAN1N6163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6163US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6163US/TR?
For technical support, including JAN1N6163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6163US/TR requirements.
6.How does Aetrix verify that JAN1N6163US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6163US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6163US/TR?
All JAN1N6163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6163US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6163US/TR part is unused and in its original packaging.
Return procedure for JAN1N6163US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6163US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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D12V0L1B2LP-7B
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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