Microchip Technology JAN1N6164AUS/TR
- Part No.:
- JAN1N6164AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6164AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,559
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Product details
Overview
JAN1N6164AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 62.2 V working standoff voltage (VWM), 77.9 V minimum breakdown voltage (V(BR)), and 112.8 V clamping voltage (VC) at 13.3 A peak pulse current (IPP), designed for lightning surge and ESD protection in military avionics power rails.
For engineers reviewing the JAN1N6164AUS/TR datasheet, JAN1N6164AUS/TR pinout, JAN1N6164AUS/TR application, or JAN1N6164AUS/TR equivalent, this part delivers verified 1500 W peak pulse power (10/1000 µs), Category 1 metallurgical bonds, triple-layer passivation, and -55°C to +175°C junction temperature operation in a robust hard-glass SQ-MELF package.
Technical Context
This TVS operates bidirectionally with no polarity marking and exhibits a 0.100 %/°C temperature coefficient of breakdown voltage (αV(BR)), enabling stable clamping performance across extreme thermal environments. Its voidless hermetic glass construction and tungsten slug terminations ensure mechanical integrity under shock/vibration and long-term reliability in sealed systems.
The device sustains 1500 W peak pulse power per 10/1000 µs waveform while limiting transient energy to ≤112.8 V at 13.3 A, with <5 µA standby current at 62.2 V and thermal resistance of 5.0 °C/W from junction to end cap - critical for high-density PCB layouts where thermal management is constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 62.2 V - Maximum continuous DC or repetitive peak voltage applied without triggering conduction |
| V(BR) min | 77.9 V @ 15 mA - Confirmed breakdown threshold ensuring predictable turn-on during transients |
| VC @ IPP | 112.8 V @ 13.3 A - Clamped voltage during 10/1000 µs surge, defining maximum stress on downstream circuitry |
| PPP | 1500 W - Peak impulse power handling capability for IEC61000-4-5 lightning-induced surges |
| TJ range | -55°C to +175°C - Full military temperature operation without derating loss in clamping performance |
| RθJEC | 5.0 °C/W - Low thermal resistance enables direct heat transfer to PCB copper or chassis mounting |
| ID @ VWM | ≤5 µA - Negligible leakage current preserves low-power standby states in battery-backed systems |
Pinout & Package
Package: SQ-MELF (Square-end-cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass case with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | No polarity marking - either terminal serves as anode or cathode depending on transient polarity |
| End Cap (both ends) | Thermal & electrical interface | Direct solderable termination for low-inductance mounting and efficient heat extraction to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical stress per MIL-PRF-19500/516 |
| Triple-layer passivation | Prevents moisture ingress and surface leakage in high-humidity or condensing environments |
| MIL-PRF-19500/516 JAN qualification | Validates screening, testing, and traceability for mission-critical defense electronics programs |
Applications
| Aerospace Power Distribution | Military Radio Front-End |
|---|---|
Use Scenario: Protection of 28 VDC aircraft bus inputs against load dump and lightning-induced surges per DO-160 Section 22. IC Role / Device Role / Timing Role: Standoff-clamp TVS placed directly at connector entry point to shunt >1 kV transients before reaching DC-DC converters. Use Value: 112.8 V clamping ensures downstream 36 V-rated input stages remain within safe operating area during 1500 W surges. | Use Scenario: ESD and EFT hardening of RF amplifier bias rails in handheld tactical radios exposed to field-handling events. IC Role / Device Role / Timing Role: Bidirectional transient suppressor across VDD and ground, absorbing ±15 kV contact discharge per IEC61000-4-2 Level 4. Use Value: <5 µA leakage preserves ultra-low quiescent current in battery-operated receivers without degrading runtime. |
| Naval Radar Signal Conditioning | Satellite Payload Power Interface |
Use Scenario: Surge suppression on analog sensor signal lines feeding radar beamforming networks in salt-fog marine environments. IC Role / Device Role / Timing Role: Low-leakage bidirectional TVS mounted adjacent to ADC inputs to prevent latch-up during conducted transients. Use Value: Triple-layer passivation and hermetic seal maintain insulation resistance >1012 Ω after 500-hr salt-spray exposure. | Use Scenario: Input protection for redundant 28 V power interfaces on LEO satellite payload modules subject to single-event burnout risks. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary surges induced by proton impacts on solar array regulators. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for additional shielding or derating in TID >100 krad(Si) missions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6164US | No "A" suffix → 5% higher VC (118.4 V), 5% lower V(BR) min (74.0 V), 5% lower IPP (12.6 A) | Reduced clamping margin and lower surge current capacity; suitable only where tighter VWM tolerance is not required | Select JAN1N6164AUS/TR when guaranteed 77.9 V V(BR) and 112.8 V VC are mandatory per design spec |
| JANTXV1N6164AUS | Higher screening level (JANTXV vs JAN): extended temperature testing, enhanced lot traceability, lower defect probability | Required for Class H or Class K space/military programs demanding zero-defect reliability and full DSCC traceability | Choose JAN1N6164AUS/TR for cost-sensitive JAN-level programs where JANTXV screening is not contractually mandated |
Compared with 1N6164US and JANTXV1N6164AUS, JAN1N6164AUS/TR provides the optimal balance of guaranteed clamping performance, MIL-qualified reliability, and procurement accessibility for defense prime contractors managing mixed-tier BOMs.
Availability
JAN1N6164AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radio front-end protection, naval radar signal conditioning, and satellite payload power interface applications requiring stable component supply with full MIL-PRF-19500/516 traceability.
Supply support for JAN1N6164AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N6138AUS–1N6173AUS family was engineered specifically for military-grade transient suppression in harsh-environment platforms where failure is not an option - delivering hermetic reliability, precise voltage thresholds, and validated surge immunity per MIL-STD-461 and IEC61000 standards.
FAQ
What is the clamping voltage of JAN1N6164AUS/TR and under what test condition is it specified?
The clamping voltage (VC) of JAN1N6164AUS/TR is 112.8 V, measured at a peak pulse current (IPP) of 13.3 A using a 10/1000 µs double-exponential waveform. This value is guaranteed per the manufacturer's electrical characteristics table and defines the maximum voltage seen by protected circuitry during standardized surge events. The JAN1N6164AUS/TR maintains this clamping performance across its full -55°C to +175°C operating junction temperature range.
Is JAN1N6164AUS/TR RoHS compliant?
No, JAN1N6164AUS/TR is not RoHS compliant. It uses tin/lead plating on copper terminals, consistent with MIL-PRF-19500/516 requirements for high-reliability military applications. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6164AUS without JAN prefix), not in JAN-qualified parts like JAN1N6164AUS/TR.
What does the "A" suffix in JAN1N6164AUS/TR signify?
The "A" suffix in JAN1N6164AUS/TR indicates standard voltage tolerances: minimum breakdown voltage (V(BR)) is 77.9 V, clamping voltage (VC) is 112.8 V, and peak pulse current (IPP) is 13.3 A. Non-A versions (e.g., JAN1N6164US/TR) have 5% higher VC, 5% lower V(BR) min, and 5% lower IPP - making the "A" version the preferred choice when tight parametric control is required in JAN-level designs.
Can JAN1N6164AUS/TR be used in surface-mount reflow processes?
Yes, JAN1N6164AUS/TR supports standard SMT reflow with a maximum solder temperature of 260°C for 10 seconds, per MIL-PRF-19500/516 qualification. Its hard-glass SQ-MELF package withstands thermal shock without cracking or delamination. Reflow profile must avoid exceeding 260°C peak and maintain ramp rates compatible with glass-body thermal expansion coefficients.
How does JAN1N6164AUS/TR differ from commercial-grade 1N6164AUS?
JAN1N6164AUS/TR is screened to JAN reliability level per MIL-PRF-19500/516, including extended temperature testing, lot traceability, and defect elimination protocols. Commercial 1N6164AUS lacks military screening, has looser parametric limits, and may use non-hermetic packaging. The JAN1N6164AUS/TR also features tin/lead terminations, whereas RoHS-compliant commercial versions use matte-tin plating.
JAN1N6164AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 62.2V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 112.8V
- Current - Peak Pulse (10/1000µs):
- 13.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6164AUS/TR FAQ
1.How can I place an order for JAN1N6164AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6164AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6164AUS/TR reliable?
The price and inventory of JAN1N6164AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6164AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6164AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6164AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6164AUS/TR?
JAN1N6164AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6164AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6164AUS/TR?
For technical support, including JAN1N6164AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6164AUS/TR requirements.
6.How does Aetrix verify that JAN1N6164AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6164AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6164AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6164AUS/TR?
All JAN1N6164AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6164AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6164AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6164AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6164AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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