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Microchip Technology JAN1N6164US/TR

Part No.:
JAN1N6164US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJAN1N6164US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,253

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Product details

Overview

JAN1N6164US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 62.2 V working standoff voltage (VWM), 77.9 V minimum breakdown voltage (V(BR)), and 112.8 V clamping voltage (VC) at 13.3 A peak pulse current (IPP), used for lightning surge and ESD protection in military avionics power rails.

For engineers reviewing the JAN1N6164US/TR datasheet, JAN1N6164US/TR pinout, JAN1N6164US/TR application, or JAN1N6164US/TR equivalent, key selection criteria include standoff voltage margin, clamping ratio, peak pulse power rating, temperature coefficient of V(BR), and MIL-spec qualification level for high-reliability deployment.

Technical Context

This device operates as a bidirectional avalanche diode TVS, leveraging hard-glass hermetic construction with Category 1 metallurgical bonds to sustain 1500 W peak pulse power (10/1000 µs) without degradation. Its VWM of 62.2 V ensures stable blocking up to rated DC voltage while maintaining low standby current (≤5 µA).

The junction-to-end-cap thermal resistance is 5.0 °C/W, enabling effective heat dissipation during transient events, and its temperature coefficient of breakdown voltage is +0.100 %/°C - critical for predicting V(BR) drift across –55 °C to +175 °C operating range.

Key Specifications

ParameterValue and Actual Design Meaning
VWM62.2 V - maximum continuous reverse voltage before conduction begins; sets safe operating margin for protected circuitry.
V(BR) min77.9 V @ 15 mA - guaranteed avalanche onset threshold; defines minimum overvoltage triggering point.
VC @ IPP112.8 V @ 13.3 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream components.
PPP1500 W - peak pulse power handling capability; validates robustness against IEC61000-4-5 lightning surges.
αV(BR)+0.100 %/°C - predictable V(BR) increase with temperature; enables accurate derating in high-ambient environments.
TJ/TSTG–55 °C to +175 °C - extended military-grade junction/storage temperature range; supports operation in harsh aerospace enclosures.

Pinout & Package

Package: SQ-MELF (C package), voidless hermetically sealed hard glass with tungsten slugs; terminals are tin/lead plated copper; polarity not marked due to bidirectional symmetry.

Pin/TerminalCircuit RoleDesign Meaning
Anode/Cathode (symmetrical)Bidirectional avalanche junctionNo polarity marking required; either end functions identically as transient clamp path in AC or DC lines.
End Cap (both ends)Thermal and electrical terminationProvides mechanical mounting interface and primary heat path to PCB; RθJEC = 5.0 °C/W measured to end cap.

Key Features

FeatureDesign Value
Voidless hermetic glass sealEliminates internal voids that cause moisture ingress or bond fatigue under thermal cycling - essential for 20+ year field life in satellites.
Category 1 metallurgical bondsGuarantees bond integrity under shock/vibration per MIL-STD-883; prevents interfacial delamination during repeated surge events.
MIL-PRF-19500/516 JAN qualificationValidated screening includes burn-in, temperature cycling, and lot acceptance testing - required for DoD procurement in flight-critical systems.
Triple-layer passivationProtects silicon surface from contamination and ion migration during long-term bias stress in humid, high-voltage environments.

Applications

Aerospace Power DistributionMilitary Radar Front-End

Use Scenario: Protection of 28 V DC bus in satellite power management units against induced lightning transients from solar array switching.

IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly across bus inputs to limit voltage excursions to <113 V during 10/1000 µs surges.

Use Value: Prevents latch-up or gate oxide rupture in downstream DC/DC converters by holding rail voltage within ±20% of nominal during 1500 W surge events.

Use Scenario: Input protection for L-band T/R module LNAs exposed to ESD from antenna coupling during maintenance handling.

IC Role / Device Role / Timing Role: Fast-response transient suppressor mounted at RF connector feedthrough to shunt ESD energy before reaching sensitive GaAs MMIC stages.

Use Value: Maintains sub-1 pA leakage at 62.2 V standoff to avoid degrading noise figure, while clamping 8 kV contact ESD per IEC61000-4-2 Level 4.

Naval Communication SystemsGround Vehicle Command & Control

Use Scenario: Surge suppression on RS-485 data lines connecting shipboard navigation computers to gyrocompass sensors in wet, salt-laden environments.

IC Role / Device Role / Timing Role: Bidirectional clamping device installed differential-mode across A/B lines to absorb common-mode surges induced by nearby radar pulses.

Use Value: Enables reliable 10 Mbps data transmission over 1200 m cable runs by limiting differential voltage swing to <2×VWM during repetitive 1 kV surges.

Use Scenario: Protection of vehicle-mounted tactical radio power inputs subjected to load dump transients up to 60 V during alternator regulation failure.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on 24 V supply rail upstream of DC/DC regulators and FPGA power sequencing circuits.

Use Value: Survives 1500 W, 10/1000 µs load dump pulses without parametric shift, ensuring uninterrupted operation during battlefield power anomalies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N6164AUSSame electrical specs but commercial-grade (non-MIL); no JAN qualification screening or temperature cycling test data.Lacks MIL-PRF-19500/516 compliance; unsuitable for DoD contracts requiring traceable reliability data.Select only for cost-sensitive non-military prototypes where full MIL screening is unnecessary.
JANTX1N6164USIdentical SQ-MELF package and electrical parameters; differs only in JANTX-level screening (more rigorous than JAN, less than JANS).Approved for higher-reliability programs requiring enhanced lot traceability and extended burn-in, e.g., airborne mission computers.Choose when system-level reliability requirements exceed JAN but do not mandate full JANS radiation hardness or extreme temp cycling.

Compared with JAN1N6164US/TR, 1N6164AUS offers identical performance at lower cost but no military qualification, while JANTX1N6164US provides tighter process controls and broader environmental validation - making it preferable for mission-critical platforms where failure risk must be minimized beyond baseline JAN requirements.

Availability

JAN1N6164US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radar front-end protection, naval communication systems, and ground vehicle command & control applications requiring stable component supply under extended lead times and strict traceability.

Supply support for JAN1N6164US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec qualified components.

The 1N6138AUS–1N6173AUS series was developed specifically to meet stringent transient suppression requirements in military avionics and space systems, where hermetic sealing, Category 1 bonding, and MIL-PRF-19500/516 qualification are mandatory.

FAQ

What is the clamping voltage of JAN1N6164US/TR and how is it verified?

The clamping voltage (VC) of JAN1N6164US/TR is 112.8 V measured at 13.3 A peak pulse current (IPP) under 10/1000 µs waveform conditions per MIL-STD-750 Method 3013. This value is confirmed in the official Microsemi T4-LDS-0278-1 datasheet, Page 3, Electrical Characteristics table. The VC specification ensures downstream components experience no more than 112.8 V during standardized surge events, and JAN1N6164US/TR maintains this performance across its full operating temperature range.

Is JAN1N6164US/TR RoHS compliant?

No, JAN1N6164US/TR is not RoHS compliant. Per the Microsemi datasheet (Page 2, Features section), RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants, not for JAN-level qualified parts like JAN1N6164US/TR. The JAN1N6164US/TR uses standard tin/lead plating on copper terminals, consistent with legacy military specifications requiring Pb-based finishes for solder joint reliability under thermal cycling.

What is the meaning of "JAN" in JAN1N6164US/TR?

"JAN" denotes Joint Army-Navy qualification per MIL-PRF-19500/516, indicating that JAN1N6164US/TR has undergone full military screening including temperature cycling, burn-in, and lot acceptance testing. It is the baseline military reliability level - less rigorous than JANTX or JANS but sufficient for many DoD applications. The "JAN" prefix confirms JAN1N6164US/TR meets the minimum screening requirements for use in defense electronics where failure cannot be tolerated.

Does JAN1N6164US/TR have polarity markings?

No, JAN1N6164US/TR does not have polarity markings because it is a bidirectional TVS device. As stated in the Microsemi datasheet (Page 2, Mechanical and Packaging section), "Polarity: No polarity marking for these bidirectional TVSs." Both ends of the SQ-MELF package function identically as symmetrical avalanche junctions, allowing flexible placement on PCBs without orientation constraints - a key advantage for protecting AC-coupled or differential signal paths.

What is the thermal resistance of JAN1N6164US/TR and how does it affect layout?

JAN1N6164US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, as specified in the Maximum Ratings table (Page 1). This means each watt of transient power dissipated raises the junction temperature by 5 °C above the end-cap temperature. For optimal thermal performance, PCB pads must provide low-impedance thermal paths to copper planes, and the end caps must be soldered to thermally robust land patterns per the recommended pad layout on Page 7 - critical for sustaining repeated 1500 W surges without exceeding the +175 °C max junction temperature.

JAN1N6164US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
62.2V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
112.8V
Current - Peak Pulse (10/1000µs):
13.3A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JAN1N6164US/TR FAQ

1.How can I place an order for JAN1N6164US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6164US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6164US/TR reliable?

The price and inventory of JAN1N6164US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6164US/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6164US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6164US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6164US/TR?

JAN1N6164US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6164US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6164US/TR?

For technical support, including JAN1N6164US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6164US/TR requirements.

6.How does Aetrix verify that JAN1N6164US/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6164US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6164US/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6164US/TR?

All JAN1N6164US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6164US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6164US/TR part is unused and in its original packaging.

Return procedure for JAN1N6164US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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