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Microchip Technology JAN1N6165US/TR
- Part No.:
- JAN1N6165US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6165US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,182
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Product details
Overview
JAN1N6165US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF (C) package, rated for 1500 W peak pulse power (10/1000 µs), 69.2 V working standoff voltage (VWM), and 125.1 V clamping voltage (VC) at 12 A peak pulse current - deployed in avionics power bus protection and radar front-end surge suppression.
For engineers reviewing the JAN1N6165US/TR datasheet, JAN1N6165US/TR pinout, JAN1N6165US/TR application, or JAN1N6165US/TR equivalent, this part delivers MIL-PRF-19500/516 qualified transient suppression with Category 1 metallurgical bonds, triple-layer passivation, and radiation-hardened glass construction for high-reliability defense electronics where failure is not an option.
Technical Context
This TVS operates bidirectionally without polarity marking and maintains stable clamping performance across -55 °C to +175 °C junction temperature range. Its hard-glass hermetic seal eliminates internal voids, and tungsten slug construction ensures low thermal resistance (RθJEC = 5.0 °C/W) for reliable energy dissipation during repetitive transients.
The device complies with IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning-induced surges). It exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.100 %/°C and is non-sensitive to ESD per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 1500 W - sustains single high-energy transients without degradation in aerospace power rail protection |
| Working Standoff Voltage (VWM) | 69.2 V - maximum continuous DC/repetitive peak voltage before conduction begins |
| Clamping Voltage (VC @ IPP) | 125.1 V @ 12 A - limits downstream voltage during surge to protect 75 V-rated ICs and FETs |
| Breakdown Voltage (V(BR)) | 86.5 V @ 15 mA - precise threshold for controlled avalanche conduction onset |
| Junction Temperature Range | -55 °C to +175 °C - enables operation in engine bay, radar transmitter, and space-qualified systems |
| Thermal Resistance (Junction-to-End Cap) | 5.0 °C/W - supports direct heat sinking via end-cap mounting for sustained pulse handling |
Pinout & Package
SQ-MELF (C) surface-mount package with square-end-cap terminals, voidless hermetically sealed hard-glass body, tungsten slugs, and tin/lead-plated copper terminations. No polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end functions identically as cathode or anode depending on transient polarity |
| End Cap (both ends) | Thermal and electrical terminal | Provides low-inductance current path and primary heat conduction path to PCB pad or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal cycling and vacuum conditions |
| Category 1 metallurgical bonds | Ensures mechanical integrity and bond strength >100 kpsi for shock/vibration survivability in missile guidance systems |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity, salt-fog, and radiation environments |
| MIL-PRF-19500/516 qualification (JAN level) | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military standard |
Applications
| Avionics Power Bus Protection | Radar RF Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Bidirectional TVS clamping transient overvoltage on main bus lines upstream of DC-DC converters and avionics controllers. Use Value: Limits bus voltage to ≤125.1 V during 1500 W surges, preserving MIL-STD-704 compliance and preventing latch-up in downstream FPGAs and ADCs. |
Use Scenario: Shielding LNA inputs and mixer stages in airborne radar receivers from antenna-coupled lightning-induced transients. IC Role / Device Role / Timing Role: Fast-response voltage clamp placed directly at RF connector feedthrough to suppress sub-100 ns ESD/EFT events. Use Value: Maintains <12 A peak pulse current capability and <125.1 V clamping while adding <0.3 pF parasitic capacitance - no RF gain degradation at X-band. |
| Tactical Vehicle Electronic Control Units | Spacecraft Power Interface Modules |
Use Scenario: Safeguarding CAN and RS-485 communication ports in armored vehicle ECUs exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Low-capacitance bidirectional TVS bridging differential signal pairs and ground to shunt common-mode transients. Use Value: Withstands 10/1000 µs surges up to 1500 W while maintaining immunity to MIL-STD-461 RS103 radiated susceptibility tests. |
Use Scenario: Protecting solar array regulator inputs and battery charge controllers in LEO satellites subject to single-event burnout (SEB) and TID exposure. IC Role / Device Role / Timing Role: Radiation-hardened TVS absorbing secondary discharge currents induced by proton bombardment in power sequencing circuits. Use Value: Inherently radiation-tolerant per MicroNote 050, with no parametric shift after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6165AUS | Same electrical specs but commercial-grade, non-military qualified; lacks MIL-PRF-19500/516 screening and Category 1 bonds | Not suitable for flight-critical or JANS/JANTXV-requiring programs; acceptable for ground-test benches and non-safety-critical subsystems | Select only when full military qualification is not mandated and cost sensitivity outweighs long-term reliability requirements |
| JAN1N6164US/TR | Lower VWM (62.2 V) and VC (112.8 V); 13.3 A IPP; otherwise identical package, qualification, and construction | Better suited for 56 V nominal systems (e.g., naval 48 V DC grids) where tighter clamping margin is required below 115 V | Choose when system operating voltage is lower and clamping headroom must be minimized without sacrificing surge rating |
Compared with 1N6165AUS and JAN1N6164US/TR, the JAN1N6165US/TR uniquely combines 69.2 V standoff, 125.1 V clamping, and full JAN-level qualification - making it the only option for mission-critical 28–70 V military platforms requiring guaranteed surge survival and radiation tolerance.
Availability
JAN1N6165US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, radar RF front-end surge suppression, and tactical vehicle electronic control units requiring stable component supply across extended production lifecycles and obsolescence-sensitive programs.
Supply support for JAN1N6165US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JAN1N6165US/TR belongs to Microsemi's legacy military TVS family engineered specifically for voidless hermetic surge protection in mission-critical systems where field failure is unacceptable - including launch vehicles, fighter jet avionics, and nuclear command infrastructure.
FAQ
What is the clamping voltage of JAN1N6165US/TR at its rated peak pulse current?
The JAN1N6165US/TR has a maximum clamping voltage (VC) of 125.1 V at 12 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance remains stable across its full operating temperature range (-55 °C to +175 °C), making JAN1N6165US/TR suitable for extreme-environment applications where voltage overshoot must be tightly bounded.
Is JAN1N6165US/TR RoHS compliant?
No, JAN1N6165US/TR is not RoHS compliant. As a JAN-level military-qualified part, it uses tin/lead-plated copper terminations per MIL-PRF-19500/516 requirements. RoHS-compliant matte-tin versions are available only for commercial-grade variants (e.g., 1N6165AUS), not for JAN, JANTX, JANTXV, or JANS reliability levels. The JAN1N6165US/TR retains lead content to ensure solder joint reliability under thermal cycling and mechanical shock - a requirement validated in its qualification testing.
What does the "US" suffix indicate in JAN1N6165US/TR?
The "US" suffix in JAN1N6165US/TR denotes the SQ-MELF (C) surface-mount package - a voidless hermetically sealed hard-glass case with square-end-cap terminals. This distinguishes it from axial-leaded versions (e.g., JAN1N6165US without "/TR", or non-suffix parts like 1N6165). The "/TR" indicates tape-and-reel packaging per EIA-481-B. The JAN1N6165US/TR thus specifies both military qualification (JAN), package type (US), and packaging format (TR) - all critical for procurement and assembly traceability in defense contracts.
How does JAN1N6165US/TR differ from JAN1N6165US (without /TR)?
JAN1N6165US/TR and JAN1N6165US share identical electrical specifications, military qualification (JAN level), and SQ-MELF package construction. The sole difference is packaging format: "/TR" indicates tape-and-reel delivery per EIA-481-B for automated SMT placement, whereas JAN1N6165US is supplied in bulk or ammo-pack formats. Both parts have the same 125.1 V clamping voltage and 69.2 V working standoff voltage, and either may be used interchangeably in design - provided the assembly process matches the packaging format.
Can JAN1N6165US/TR be used in place of JAN1N6166US/TR?
JAN1N6165US/TR is not a direct replacement for JAN1N6166US/TR due to differing electrical parameters: JAN1N6165US/TR has VWM = 69.2 V and VC = 125.1 V, while JAN1N6166US/TR has VWM = 76.0 V and VC = 137.6 V. Substituting them requires verifying that the higher clamping voltage of JAN1N6166US/TR does not exceed downstream component ratings, and that the 76.0 V standoff aligns with system operating margins. The JAN1N6165US/TR remains optimal for 70 V-class systems needing tighter clamping headroom.
JAN1N6165US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6165US/TR FAQ
1.How can I place an order for JAN1N6165US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6165US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6165US/TR reliable?
The price and inventory of JAN1N6165US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6165US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6165US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6165US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6165US/TR?
JAN1N6165US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6165US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6165US/TR?
For technical support, including JAN1N6165US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6165US/TR requirements.
6.How does Aetrix verify that JAN1N6165US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6165US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6165US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6165US/TR?
All JAN1N6165US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6165US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6165US/TR part is unused and in its original packaging.
Return procedure for JAN1N6165US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6165US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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