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Microchip Technology JAN1N6166AUS/TR
- Part No.:
- JAN1N6166AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6166AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,181
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Product details
Overview
JAN1N6166AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 76.0 V working standoff voltage (VWM), 95.0 V minimum breakdown voltage (V(BR)), and 137.6 V clamping voltage (VC) at 10.9 A peak pulse current (IPP) for 10/1000 µs waveform - used in high-reliability military power rail protection.
For engineers reviewing the JAN1N6166AUS/TR datasheet, JAN1N6166AUS/TR pinout, JAN1N6166AUS/TR application, or JAN1N6166AUS/TR equivalent, key selection criteria include standoff voltage tolerance, clamping performance under 1500 W peak pulse power, Category 1 metallurgical bond reliability, and SQ-MELF package compatibility with automated SMT placement.
Technical Context
This device operates as a bidirectional TVS diode with symmetrical avalanche conduction in both polarities, enabling transient suppression on AC-coupled or floating signal/power lines without polarity concerns. Its hard-glass hermetic construction and tungsten slug terminations support operation from –55 °C to +175 °C junction temperature with 5.0 °C/W thermal resistance from junction to end cap.
The JAN1N6166AUS/TR delivers 1500 W peak pulse power for 10/1000 µs transients while maintaining ≤5 µA standby current at VWM and exhibiting a +0.100 %/°C temperature coefficient of breakdown voltage - critical for stable clamping across extended military temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 76.0 V - maximum continuous DC or repetitive peak reverse voltage before significant leakage; sets upper limit for protected circuit operating voltage. |
| V(BR) min | 95.0 V @ 12 mA - guaranteed avalanche onset threshold; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 137.6 V @ 10.9 A - clamped voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream components. |
| PPP | 1500 W - peak impulse power handling capability; supports lightning-induced surges per IEC61000-4-5 Level 3–4. |
| ID @ VWM | ≤5 µA - ultra-low leakage at rated standoff; minimizes static power loss and avoids false triggering in high-impedance nodes. |
| αV(BR) | +0.100 %/°C - predictable positive drift of breakdown voltage with temperature; enables accurate derating in thermal design. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; either end functions identically as cathode or anode depending on transient polarity - simplifies PCB layout and eliminates orientation errors. |
| End Cap (both ends) | Thermal & electrical interface | Direct thermal path to PCB pad; tungsten slugs enable 5.0 °C/W RθJEC - critical for sustained power dissipation in confined military enclosures. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional TVS architecture | Enables single-device protection of AC signals, differential buses, or ungrounded power rails without polarity constraints. |
| Category 1 metallurgical bonds | Guarantees interfacial integrity under thermal cycling and mechanical shock - required for MIL-PRF-19500/516 JAN qualification. |
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid, salt-laden, or vacuum environments. |
| SQ-MELF square-end-cap geometry | Ensures consistent coplanarity and solder joint formation during reflow; eliminates tombstoning in high-volume SMT assembly. |
Applications
| Aerospace Power Distribution | Military Avionics Data Buses |
|---|---|
Use Scenario: Protection of 28 VDC aircraft bus feeders against load dump and induced lightning transients. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly across bus rails to limit voltage excursions to <140 V. Use Value: Prevents damage to upstream DC-DC converters and downstream avionics modules during MIL-STD-461G CS115 pulses. | Use Scenario: ESD and EFT hardening of RS-422/RS-485 links in mission-critical flight control networks. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor bridging differential pairs to clamp common-mode surges. Use Value: Maintains signal integrity up to 10 Mbps while meeting IEC61000-4-2 Level 4 (15 kV air) and IEC61000-4-4 Level 3 (1 kV). |
| Tactical Vehicle Electronics | Spacecraft Power Conditioning |
Use Scenario: Input-stage surge protection for 270 VDC vehicle power systems exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Primary TVS on DC input filter stage, coordinated with MOVs and fuses for multi-level defense. Use Value: Withstands 1500 W pulses without degradation, supporting DO-160 Section 22 Level 3 lightning injection testing. | Use Scenario: Radiation-tolerant overvoltage suppression in satellite power regulation units operating beyond LEO. IC Role / Device Role / Timing Role: Standoff-rated TVS on regulated 28 V outputs to absorb secondary transients from solar array switching. Use Value: Inherent radiation hardness per MicroNote 050 enables >100 krad(Si) TID tolerance without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6166US | No JAN qualification; commercial-grade only; same VWM, V(BR), VC, and IPP values but lacks MIL-PRF-19500/516 test documentation. | Approved for non-military industrial use only; not suitable for DoD procurement or space-qualified designs. | Select when cost sensitivity outweighs formal reliability certification requirements. |
| JANTXV1N6166AUS | Same electrical specs but qualified to JANTXV level - includes additional screening (burn-in, thermal shock, life test) per MIL-PRF-19500/516. | Required for airborne platforms where failure modes must be statistically bounded per MIL-HDBK-217F. | Select when system-level FMEA mandates enhanced process controls and lot traceability. |
Compared with JAN1N6166AUS/TR, 1N6166US offers identical clamping performance at lower cost but no military qualification, while JANTXV1N6166AUS adds rigorous screening for mission-critical deployment - enabling trade-offs between assurance level, lifecycle cost, and environmental survivability.
Availability
JAN1N6166AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military avionics data buses, and tactical vehicle electronics requiring stable component supply with full MIL-PRF-19500/516 traceability and long-term obsolescence management.
Supply support for JAN1N6166AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N6138AUS–1N6173AUS series was developed specifically to meet MIL-PRF-19500/516 requirements for hermetically sealed, voidless, high-power TVS diodes in SQ-MELF packaging - targeting applications where single-point failure is unacceptable.
FAQ
What is the maximum clamping voltage of JAN1N6166AUS/TR under a 10/1000 µs surge?
The JAN1N6166AUS/TR has a maximum clamping voltage (VC) of 137.6 V when subjected to a 10.9 A peak pulse current (IPP) with a 10/1000 µs waveform. This value is measured per standard test conditions defined in MIL-PRF-19500/516 and is guaranteed across the full operating temperature range of –55 °C to +175 °C. The clamping performance ensures downstream components see no more than 137.6 V during surge events, making JAN1N6166AUS/TR suitable for protecting 76 V nominal systems.
Is JAN1N6166AUS/TR RoHS compliant?
No, JAN1N6166AUS/TR is not RoHS compliant. It uses tin/lead plating on copper terminals, consistent with MIL-PRF-19500/516 JAN-level qualification requirements. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6166AUS without JAN prefix), not in JAN-qualified parts. JAN1N6166AUS/TR remains fully compliant with DoD Directive 8170.01 and legacy military procurement standards that permit leaded finishes.
What does the "A" suffix in JAN1N6166AUS/TR indicate?
The "A" suffix in JAN1N6166AUS/TR denotes standard voltage tolerance: ±5% on breakdown voltage (V(BR)) and clamping voltage (VC), and ±5% on peak pulse current (IPP). Non-A versions (e.g., JAN1N6166US) have 5% higher VC, 5% lower minimum V(BR), and 5% lower IPP - making the "A" variant more tightly specified for precision clamping applications. This distinction is explicitly defined in the nomenclature section of Microsemi's T4-LDS-0278-1 datasheet.
Can JAN1N6166AUS/TR be used in place of axial-leaded 1N6166 devices?
No, JAN1N6166AUS/TR is not a direct replacement for axial-leaded 1N6166 parts due to fundamental package differences: it uses SQ-MELF surface-mount construction, whereas axial-leaded versions use DO-41 or similar through-hole packages. Mechanical mounting, thermal path, and PCB layout are incompatible. While electrical parameters match within tolerance, the JAN1N6166AUS/TR requires requalification for mechanical stress, solder joint reliability, and board-level EMI - especially in vibration-prone military platforms.
What is the thermal resistance from junction to end cap for JAN1N6166AUS/TR?
The thermal resistance from junction to end cap (RθJEC) for JAN1N6166AUS/TR is 5.0 °C/W, as specified in the Maximum Ratings table of the official Microsemi datasheet T4-LDS-0278-1. This low thermal resistance is enabled by tungsten slugs integrated into the hard-glass SQ-MELF package and allows efficient heat transfer to the PCB copper pads. Designers must ensure adequate copper area and thermal vias beneath both end caps to maintain junction temperature below +175 °C under 1500 W pulse loading - a requirement validated in JAN-level qualification testing.
JAN1N6166AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 76V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137.6V
- Current - Peak Pulse (10/1000µs):
- 10.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6166AUS/TR FAQ
1.How can I place an order for JAN1N6166AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6166AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6166AUS/TR reliable?
The price and inventory of JAN1N6166AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6166AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6166AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6166AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6166AUS/TR?
JAN1N6166AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6166AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6166AUS/TR?
For technical support, including JAN1N6166AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6166AUS/TR requirements.
6.How does Aetrix verify that JAN1N6166AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6166AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6166AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6166AUS/TR?
All JAN1N6166AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6166AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6166AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6166AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6166AUS/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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