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Microchip Technology JAN1N6167US/TR
- Part No.:
- JAN1N6167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6167US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
JAN1N6167US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 86.6 V working standoff voltage (VWM), and 151.3 V clamping voltage (VC) at 9.9 A peak pulse current. It is MIL-PRF-19500/516 qualified to JAN level and designed for lightning surge and ESD protection in high-reliability military avionics and space-grade power interfaces.
For engineers reviewing the JAN1N6167US/TR datasheet, JAN1N6167US/TR pinout, JAN1N6167US/TR application, or JAN1N6167US/TR equivalent, this page delivers verified electrical parameters, military qualification context, thermal derating behavior, package dimensions, and direct alternatives with documented voltage and surge performance differences.
Technical Context
This device operates as a bidirectional avalanche diode TVS, leveraging hard-glass construction with internal Category 1 metallurgical bonds to ensure radiation hardness and long-term reliability under extreme thermal cycling. Its breakdown voltage is 104.5 V minimum at 12 mA test current, with a temperature coefficient of 0.100 %/°C.
The JAN1N6167US/TR is specified for operation across –55 °C to +175 °C junction temperature, with thermal resistance junction-to-end cap (RθJEC) of 5.0 °C/W and maximum steady-state off-state power of 5.0 W at TEC = 150 °C - derated linearly to zero at 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 86.6 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins; defines circuit operating margin before clamping. |
| VBR min | 104.5 V @ 12 mA - Minimum avalanche breakdown voltage; ensures predictable turn-on threshold under transient stress. |
| VC | 151.3 V @ 9.9 A - Clamping voltage during 10/1000 µs surge; limits downstream voltage stress to safe levels. |
| PPP | 1500 W - Peak pulse power handling for standardized 10/1000 µs waveform; supports IEC61000-4-5 Level 3–4 lightning immunity. |
| IPP | 9.9 A - Peak pulse current corresponding to VC; used to size upstream fusing and PCB trace robustness. |
| αVBR | 0.100 %/°C - Temperature coefficient of breakdown voltage; enables accurate thermal drift modeling in wide-temperature designs. |
| TJ range | –55 °C to +175 °C - Full military-grade junction temperature range; validated for aerospace and defense mission-critical systems. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No functional distinction between terminals; either end serves as cathode or anode depending on transient polarity - enables single-component protection of AC or differential lines. |
| End Cap (both ends) | Thermal and electrical interface | Direct thermal path to PCB pad or heatsink; RθJEC = 5.0 °C/W enables precise junction temperature estimation during surge events. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional transient suppression | Protects both polarities of AC signals or ungrounded DC buses without external polarity coordination. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in vacuum or humid environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under shock, vibration, and thermal cycling per MIL-STD-883; required for JANS-level space qualification. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing - certifies suitability for Class H military hardware. |
Applications
| Avionics Power Bus Protection | Spacecraft DC Distribution |
|---|---|
Use Scenario: Protecting 28 VDC and 115 VAC aircraft bus interfaces against induced lightning transients per DO-160 Section 22. IC Role / Device Role / Timing Role: Bidirectional TVS placed across bus inputs to clamp surges before they reach DC-DC converters or motor controllers. Use Value: With 151.3 V clamping at 9.9 A and 1500 W rating, JAN1N6167US/TR prevents latch-up and gate oxide damage in downstream SiC MOSFET drivers. | Use Scenario: Shielding satellite power distribution units (PDUs) from secondary lightning effects and electrostatic discharge during launch and orbit insertion. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly on PDU input terminals to absorb >10 kV ESD events per MIL-STD-1540B. Use Value: Radiation-hardened construction and –55 °C to +175 °C operation ensure uninterrupted protection across orbital thermal extremes without parameter drift. |
| Military Vehicle ECUs | High-Reliability Industrial PLC Inputs |
Use Scenario: Safeguarding engine control unit (ECU) CAN and analog sensor inputs against load dump and alternator ripple in tracked vehicle platforms. IC Role / Device Role / Timing Role: TVS deployed at connector entry points to shunt transients before signal conditioning amplifiers or microcontroller GPIOs. Use Value: 86.6 V VWM provides 20% margin above nominal 70 V load-dump peaks, while 0.100 %/°C αVBR ensures stable clamping across desert-to-arctic ambient ranges. | Use Scenario: Hardening programmable logic controller (PLC) analog input modules against field wiring faults and ground loop surges in oil refinery control rooms. IC Role / Device Role / Timing Role: Bidirectional TVS integrated into front-end protection networks for 4–20 mA current loops and ±10 V differential inputs. Use Value: SQ-MELF package enables automated placement and reflow compatibility, while hermetic seal prevents corrosion from H2S and salt-laden atmospheres. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6167US | Same VWM, VC, and PPP; qualified to higher JANTXV reliability level with extended screening and tighter parametric limits. | Required for programs specifying JANTXV-level documentation traceability and failure analysis reporting. | Select when full MIL-PRF-19500/516 JANTXV compliance - including lot-specific test reports and enhanced burn-in - is mandated by system specification. |
| 1N6167AUS | Commercial-grade version; identical electrical specs but not MIL-qualified; RoHS-compliant matte-tin plating available. | Suitable only for non-military industrial or telecom infrastructure where radiation hardness and extreme temperature endurance are not required. | Choose for cost-sensitive, high-volume production where military screening is unnecessary and RoHS compliance is mandatory. |
Compared with JAN1N6167US/TR, JANTXV1N6167US adds screening rigor without altering electrical behavior, while 1N6167AUS removes military qualification entirely - making the JAN variant the sole choice for programs requiring certified JAN-level reliability with full traceability and environmental resilience.
Availability
JAN1N6167US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, spacecraft DC distribution, and military vehicle ECU designs requiring stable component supply with guaranteed long-term obsolescence management.
Supply support for JAN1N6167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The JAN1N6167US/TR belongs to Microsemi's legacy MIL-PRF-19500/516 TVS family, engineered specifically for survivability in mission-critical systems where single-point failure is unacceptable - emphasizing hermeticity, surge robustness, and parametric stability across extreme environments.
FAQ
What is the clamping voltage of JAN1N6167US/TR at its rated peak pulse current?
The clamping voltage (VC) of JAN1N6167US/TR is 151.3 V measured at 9.9 A peak pulse current (IPP) under the standard 10/1000 µs double-exponential waveform. This value is guaranteed per Microsemi's T4-LDS-0278-1 datasheet and defines the maximum voltage imposed on protected circuitry during surge events. The JAN1N6167US/TR maintains this clamping performance across its full –55 °C to +175 °C operating junction temperature range.
Is JAN1N6167US/TR compatible with lead-free reflow soldering processes?
JAN1N6167US/TR features tin/lead-plated terminals and is rated for a maximum solder temperature of 260 °C for 10 seconds, aligning with SnPb reflow profiles. It is not qualified for lead-free reflow, as its terminal plating and internal metallurgy are optimized for traditional eutectic solder. For RoHS-compliant assembly, the commercial 1N6167AUS variant with matte-tin plating should be selected instead of JAN1N6167US/TR.
Does JAN1N6167US/TR have polarity markings, and how is it installed on the PCB?
No, JAN1N6167US/TR has no polarity markings because it is a bidirectional TVS diode - both terminals are functionally identical and interchangeable. During PCB layout, either end may be connected to line or return; orientation does not affect electrical performance. The SQ-MELF package uses square-end-cap geometry to ensure consistent placement and solder joint formation during automated assembly.
What is the maximum steady-state power dissipation of JAN1N6167US/TR at 150 °C end-cap temperature?
JAN1N6167US/TR is rated for 5.0 W of steady-state off-state power (PD) at an end-cap temperature (TEC) of 150 °C, with linear derating to zero at 175 °C. This rating applies only when thermal resistance from junction to end cap (RθJEC) is maintained at 5.0 °C/W - typically achieved via direct copper pad contact and minimal thermal interface resistance. Ambient-based ratings are not specified for this device.
How does JAN1N6167US/TR meet IEC61000-4-5 surge immunity requirements?
JAN1N6167US/TR supports IEC61000-4-5 compliance through its 1500 W peak pulse power rating at 10/1000 µs, which exceeds the energy thresholds required for Level 3 (1 kV line-earth, 2 kV line-line) and Level 4 (2 kV line-earth, 4 kV line-line) testing. Its 151.3 V clamping voltage ensures protected circuits remain below 160 V during surge events, preserving functionality of downstream 150 V-rated components. The device's hermetic seal and Category 1 bonds further guarantee performance retention after repeated surges.
JAN1N6167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 86.6V
- Voltage - Breakdown (Min):
- 104.5V
- Voltage - Clamping (Max) @ Ipp:
- 151.3V
- Current - Peak Pulse (10/1000µs):
- 9.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6167US/TR FAQ
1.How can I place an order for JAN1N6167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6167US/TR reliable?
The price and inventory of JAN1N6167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6167US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6167US/TR?
JAN1N6167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6167US/TR?
For technical support, including JAN1N6167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6167US/TR requirements.
6.How does Aetrix verify that JAN1N6167US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6167US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6167US/TR?
All JAN1N6167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6167US/TR part is unused and in its original packaging.
Return procedure for JAN1N6167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6167US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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