My Inquiry
My Account
Microchip Technology JAN1N6168US/TR
- Part No.:
- JAN1N6168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6168US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,955
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6168US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 91.2 V working standoff voltage (VWM), and 165.1 V clamping voltage (VC) at 9.1 A peak pulse current - deployed in avionics power bus protection and radar front-end surge suppression.
For engineers reviewing the JAN1N6168US/TR datasheet, JAN1N6168US/TR pinout, JAN1N6168US/TR application, or JAN1N6168US/TR equivalent, this page delivers verified electrical parameters, MIL-PRF-19500/516 qualification status, thermal derating behavior, and direct alternatives with documented VC, VWM, and IPP differences.
Technical Context
This TVS operates bidirectionally without polarity marking and uses internal Category 1 metallurgical bonds within a hard-glass hermetic cavity to ensure radiation hardness and zero voids - critical for space-grade and high-reliability defense systems. Its 5.0 °C/W junction-to-end-cap thermal resistance enables stable operation up to 175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning-induced surges), with a 0.100 %/°C temperature coefficient of breakdown voltage (αVBR) and ≤5 µA standby current at VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 91.2 V - maximum continuous reverse/forward voltage before conduction begins; defines circuit operating margin before clamping. |
| VC @ IPP | 165.1 V at 9.1 A - clamped voltage during 10/1000 µs surge; determines protected IC's maximum transient stress level. |
| PPP | 1500 W - peak pulse power handling capability; sets survivability against MIL-STD-461 CS115/CS116-level transients. |
| IPP | 9.1 A - peak surge current supported at rated VC; used to size upstream fusing and trace width. |
| TJ Range | –55 to +175 °C - full military temperature range; enables deployment in engine bay, radar modules, and satellite power converters. |
| RθJEC | 5.0 °C/W - low thermal resistance to end cap; allows direct heat sinking to chassis or cold plate without PCB copper pour. |
| αVBR | 0.100 %/°C - predictable VBR drift over temperature; supports accurate system-level worst-case clamping analysis. |
Pinout & Package
Package: SQ-MELF (square-end-cap metal electrode leadless face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional surge conduction path | No designated anode or cathode; either end functions identically under positive or negative transients. |
| End Cap (both ends) | Thermal and electrical interface | Primary heat dissipation path to mounting surface; also serves as current return path during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - ensures >20-year field reliability in humid, high-vibration environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling (–55/+175 °C) and mechanical shock per MIL-STD-883 Method 2002. |
| MIL-PRF-19500/516 qualification | Validated to JAN reliability level including burn-in, life test, and lot acceptance testing - required for DoD procurement. |
| Triple-layer passivation | Prevents surface leakage and electrochemical migration under high humidity and bias, maintaining <5 µA ID at VWM. |
Applications
| Avionics Power Bus Protection | Radar Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks from load dump and inductive switching transients. IC Role / Device Role / Timing Role: Primary bidirectional clamping element placed across bus rails before DC-DC converters and flight control processors. Use Value: Limits transient excursions to ≤165.1 V, preserving downstream 100 V-rated MOSFETs and isolated gate drivers. | Use Scenario: Shielding LNA inputs and mixer stages in airborne pulse-Doppler radar receivers from antenna-coupled ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Fast-response (<1 ns) shunt protector mounted directly at RF connector feedthroughs. Use Value: Maintains signal integrity by clamping sub-100 ns transients without parasitic resonance - enabled by low-inductance SQ-MELF geometry. |
| Satellite Power Converter Input | Ground Vehicle Command & Control Interface |
Use Scenario: Safeguarding DC-DC converter inputs on LEO satellite power management units exposed to solar array arc transients. IC Role / Device Role / Timing Role: First-line transient suppressor on primary 50 V bus input, preceding EMI filters and isolation transformers. Use Value: Withstands 1500 W pulses while surviving total ionizing dose (TID) >100 krad(Si) - inherent radiation hardness per MicroNote 050. | Use Scenario: Hardening RS-422/485 data lines and 24 V control power inputs in armored vehicle C4I systems against EMP and EFT. IC Role / Device Role / Timing Role: Bidirectional rail clamp on isolated power and signal interfaces between mission computers and sensor pods. Use Value: Meets IEC61000-4-4 Level 4 (4 kV) and IEC61000-4-5 Level 3 (2 kV line-earth) without external series impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6168US | Same VWM (91.2 V), VC (165.1 V), and IPP (9.1 A); qualified to JANTXV level with extended screening (e.g., 100% burn-in, radiation lot acceptance). | Required for programs specifying JANTXV reliability level; higher cost and longer lead time than JAN. | Select when DoD contract mandates JANTXV screening or when operating lifetime exceeds 15 years in inaccessible locations. |
| 1N6168AUS | Commercial-grade version; identical electrical specs but not MIL-PRF-19500/516 qualified; RoHS-compliant matte-tin plating available. | Suitable only for non-military industrial or telecom infrastructure where radiation hardness and long-term reliability are not critical. | Choose for cost-sensitive prototyping or commercial derivatives where MIL-spec is not contractually required. |
Compared with JAN1N6168US/TR, JANTXV1N6168US adds rigorous screening for extended life and radiation tolerance, while 1N6168AUS removes military qualification and offers RoHS compliance - enabling trade-offs between reliability assurance, lifecycle support, and environmental compliance.
Availability
JAN1N6168US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, radar front-end surge suppression, and satellite power converter input applications requiring stable component supply across extended production lifecycles.
Supply support for JAN1N6168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JAN1N6168US/TR belongs to Microsemi's legacy military TVS family engineered specifically for survivability in harsh electromagnetic environments - delivering guaranteed clamping performance under extreme thermal, mechanical, and radiation stress.
FAQ
What is the clamping voltage of JAN1N6168US/TR at its rated peak pulse current?
The clamping voltage (VC) of JAN1N6168US/TR is 165.1 V measured at 9.1 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is specified in the Electrical Characteristics table of Microsemi's T4-LDS-0278-1 datasheet and defines the maximum voltage seen by downstream circuitry during a surge event. JAN1N6168US/TR maintains this clamping performance across its full –55 °C to +175 °C operating junction temperature range.
Is JAN1N6168US/TR compatible with lead-free reflow soldering processes?
JAN1N6168US/TR is rated for a maximum solder temperature of 260 °C for 10 seconds, making it compatible with standard lead-free reflow profiles (e.g., JEDEC J-STD-020). Its tin/lead-plated terminals are designed for compatibility with both SnPb and Pb-free assembly, though RoHS-compliant matte-tin plating is only available on commercial-grade variants like 1N6168AUS - not on JAN-level parts.
Does JAN1N6168US/TR have polarity markings for PCB layout?
No, JAN1N6168US/TR has no polarity markings because it is a bidirectional TVS diode. The SQ-MELF package features symmetrical square-end-cap terminals, and either end functions identically under positive or negative transient voltages. PCB footprint design must therefore accommodate orientation-agnostic placement - confirmed in the Mechanical and Packaging section of the T4-LDS-0278-1 datasheet.
What is the maximum steady-state power dissipation of JAN1N6168US/TR at 25 °C ambient?
At TA = 25 °C, the maximum steady-state power dissipation (PD) of JAN1N6168US/TR is 3.0 W, as specified in the Maximum Ratings table. This rating assumes adequate PCB thermal management to prevent exceeding the 175 °C maximum junction temperature. Derating is linear above 150 °C case temperature, reaching zero at 175 °C - detailed in Figure 4 of the datasheet.
How does JAN1N6168US/TR meet IEC61000-4-5 surge immunity requirements?
JAN1N6168US/TR provides protection against secondary effects of lightning per select levels of IEC61000-4-5, as stated in the Applications/Benefits section of its datasheet. Its 1500 W peak pulse power rating and 165.1 V clamping voltage enable it to limit induced surges to safe levels on 24–110 V DC systems. It is typically deployed with series impedance (e.g., 10 Ω resistor or ferrite bead) to shape the surge waveform and ensure compliance with Level 3 (2 kV line-earth) and Level 4 (4 kV line-earth) tests.
JAN1N6168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 91.2V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165.1V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6168US/TR FAQ
1.How can I place an order for JAN1N6168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6168US/TR reliable?
The price and inventory of JAN1N6168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6168US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6168US/TR?
JAN1N6168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6168US/TR?
For technical support, including JAN1N6168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6168US/TR requirements.
6.How does Aetrix verify that JAN1N6168US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6168US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6168US/TR?
All JAN1N6168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6168US/TR part is unused and in its original packaging.
Return procedure for JAN1N6168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6168US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
