Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JAN1N6169AUS/TR

Part No.:
JAN1N6169AUS/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJAN1N6169AUS/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,872

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JAN1N6169AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 98.8 V working standoff voltage (VWM), 123.5 V minimum breakdown voltage (V(BR)), and 178.8 V clamping voltage (VC) at 8.4 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates across –55 °C to +175 °C junction temperature range, used in military avionics power rail protection.

For engineers reviewing the JAN1N6169AUS/TR datasheet, JAN1N6169AUS/TR pinout, JAN1N6169AUS/TR application, or JAN1N6169AUS/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and compatibility with high-energy IEC61000-4-5 lightning surge waveforms.

Technical Context

This TVS diode employs hard-glass hermetic construction with internal Category 1 metallurgical bonds, enabling radiation hardness per MicroNote 050 and immunity to ESD per MIL-STD-750 Method 1020. Its bidirectional architecture provides symmetrical clamping without polarity marking, supporting protection of AC-coupled or differential signal lines.

Designed for transient suppression in harsh environments, it sustains 1500 W peak pulse power under 10/1000 µs waveform while maintaining <5 µA standby current at VWM and linear derating above 150 °C end-cap temperature. The SQ-MELF "C" package ensures robust mechanical mounting and consistent thermal path via tungsten slugs.

Key Specifications

ParameterValue and Actual Design Meaning
VWM98.8 V - Maximum continuous DC or repetitive peak voltage the device blocks without conduction.
V(BR) min123.5 V @ 10 mA - Minimum voltage at which the device enters avalanche breakdown, ensuring predictable turn-on margin.
VC @ IPP178.8 V @ 8.4 A - Clamped voltage during 10/1000 µs surge, defining maximum stress imposed on protected circuitry.
PPP1500 W - Peak impulse power handling capability, critical for IEC61000-4-5 Level 3–4 secondary lightning surge compliance.
TJ Range–55 °C to +175 °C - Full military-grade operating junction temperature range, validated for aerospace and defense platforms.
RθJEC5.0 °C/W - Junction-to-end-cap thermal resistance, enabling direct thermal coupling to heatsink or PCB copper for sustained power dissipation.
αV(BR)0.105 %/°C - Temperature coefficient of breakdown voltage, supporting stable clamping performance across wide ambient swings.

Pinout & Package

Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs, square-end-cap terminals, RoHS-compliant matte-tin plating available for commercial grade only).

Pin/TerminalCircuit RoleDesign Meaning
Anode/Cathode (bidirectional)Transient conduction pathNo polarity marking; either terminal serves as anode or cathode depending on transient polarity-enables single-device protection of AC or floating nodes.
End Cap (both ends)Thermal interface & mechanical anchorDirect thermal path to PCB or heatsink; tungsten slugs ensure low RθJEC (5.0 °C/W) and mechanical stability under shock/vibe.

Key Features

FeatureDesign Value
Bidirectional clampingEnables single-device protection of AC-coupled, differential, or floating bus lines without external polarity management.
Category 1 metallurgical bondsEnsures long-term bond integrity under thermal cycling and mechanical stress, meeting MIL-PRF-19500/516 reliability requirements.
Voidless hermetic glass sealPrevents moisture ingress and internal corrosion, eliminating failure modes common in plastic-packaged TVS devices in humid or sealed enclosures.
MIL-qualified JAN levelValidated for use in mission-critical systems requiring full traceability, lot control, and extended temperature operation per MIL-PRF-19500/516.

Applications

Avionics Power DistributionMilitary Vehicle Data Buses

Use Scenario: Protection of 28 V DC power rails feeding flight control computers against load dump and inductive switching transients.

IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at power entry point to limit voltage excursions to ≤178.8 V.

Use Value: Prevents latch-up or permanent damage in downstream FPGAs and microcontrollers by limiting surge energy within 1500 W rating and –55 °C to +175 °C operational envelope.

Use Scenario: Surge suppression on MIL-STD-1553B data bus stubs exposed to EFT and lightning-induced coupling in armored vehicle electronics.

IC Role / Device Role / Timing Role: Fast-response transient clamp on differential pair terminations, leveraging symmetric bidirectional behavior and low capacitance.

Use Value: Maintains signal integrity during IEC61000-4-4 EFT bursts (4 kV) and IEC61000-4-5 surge events (2 kV line-earth) without degrading 1 Mbps timing margins.

Satellite Power ConditioningNaval Radar Front-End Protection

Use Scenario: Input-stage protection for DC-DC converters in LEO satellite power systems subject to single-event burnout and total ionizing dose.

IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing ESD and secondary surges induced by particle strikes in solar array regulation circuits.

Use Value: Inherent radiation tolerance per MicroNote 050 eliminates need for additional shielding or derating, preserving 1500 W pulse capability after 100 krad(Si) exposure.

Use Scenario: Protection of RF receiver front-end LNAs and mixers from antenna-coupled lightning transients in shipboard radar systems.

IC Role / Device Role / Timing Role: Low-leakage (≤5 µA @ 98.8 V) clamping device placed before bandpass filters to prevent gate oxide rupture.

Use Value: Limits clamping voltage to 178.8 V while maintaining sub-5 µA leakage, avoiding DC bias shift in sensitive analog receive paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N6169USNo JAN qualification; commercial-grade only, non-hermetic glass, no MIL-PRF-19500/516 compliance.Limited to non-mission-critical industrial systems where radiation hardness and extended temperature range are not required.Select when cost sensitivity outweighs reliability requirements and full military qualification is unnecessary.
JANTX1N6169AUSSame electrical specs but JANTX-level qualification: tighter parametric screening, enhanced lot traceability, and extended temperature validation beyond JAN.Required for programs specifying JANTX-level procurement, such as U.S. DoD prime contracts with strict reliability assurance clauses.Choose when contract documentation mandates JANTX-level testing and reporting, not just JAN-level baseline performance.

Compared with JAN1N6169AUS/TR, 1N6169US lacks military qualification and hermetic sealing-reducing suitability for space or naval environments-while JANTX1N6169AUS adds screening rigor without altering clamping behavior, making it preferable for high-assurance procurement where documentation depth matters more than electrical differentiation.

Availability

JAN1N6169AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle data buses, satellite power conditioning, and naval radar front-end protection requiring stable component supply across extended temperature and radiation-exposed environments.

Supply support for JAN1N6169AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance, extended temperature operation, and military qualification.

The 1N6138AUS–1N6173AUS family delivers MIL-PRF-19500/516-qualified transient suppression for mission-critical systems where failure is unacceptable-targeting power rail, data bus, and sensor interface protection in extreme environments.

FAQ

What is the clamping voltage of JAN1N6169AUS/TR under a 10/1000 µs surge?

The JAN1N6169AUS/TR exhibits a maximum clamping voltage (VC) of 178.8 V when subjected to an 8.4 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured and guaranteed per the manufacturer's electrical characteristics table and defines the upper voltage limit imposed on protected circuitry during surge events.

Is JAN1N6169AUS/TR suitable for bidirectional signal line protection?

Yes, JAN1N6169AUS/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior for positive and negative transients, making it appropriate for protecting AC-coupled interfaces, differential buses like MIL-STD-1553B, and floating sensor inputs without external orientation constraints.

Does JAN1N6169AUS/TR meet IEC61000-4-5 surge immunity standards?

JAN1N6169AUS/TR is rated for protection against secondary effects of lightning per select levels of IEC61000-4-5, supported by its 1500 W peak pulse power rating and 178.8 V clamping voltage. System-level compliance requires proper PCB layout, grounding, and coordination with upstream filters-but the device itself satisfies the core voltage-limiting requirement for Level 3–4 surge testing.

What is the thermal resistance specification for JAN1N6169AUS/TR?

JAN1N6169AUS/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured under standard conditions. This low value enables efficient heat transfer from the silicon junction through the tungsten slugs to the PCB or heatsink, supporting reliable operation at elevated ambient temperatures up to +175 °C junction.

How does the JAN qualification level differ from commercial versions of JAN1N6169AUS/TR?

The JAN qualification level for JAN1N6169AUS/TR includes full compliance with MIL-PRF-19500/516, covering environmental stress screening, lot traceability, extended temperature validation (–55 °C to +175 °C), and hermeticity testing. Commercial variants lack these requirements and are not approved for use in military or space applications where failure is not tolerable.

JAN1N6169AUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
98.8V
Voltage - Breakdown (Min):
123.5V
Voltage - Clamping (Max) @ Ipp:
178.8V
Current - Peak Pulse (10/1000µs):
8.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JAN1N6169AUS/TR FAQ

1.How can I place an order for JAN1N6169AUS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6169AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6169AUS/TR reliable?

The price and inventory of JAN1N6169AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6169AUS/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6169AUS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6169AUS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6169AUS/TR?

JAN1N6169AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6169AUS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6169AUS/TR?

For technical support, including JAN1N6169AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6169AUS/TR requirements.

6.How does Aetrix verify that JAN1N6169AUS/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6169AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6169AUS/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6169AUS/TR?

All JAN1N6169AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6169AUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6169AUS/TR part is unused and in its original packaging.

Return procedure for JAN1N6169AUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N6169AUS/TR Tags

  • JAN1N6169AUS/TR
  • JAN1N6169AUS/TR PDF
  • JAN1N6169AUS/TR Datasheet
  • JAN1N6169AUS/TR Specifications
  • JAN1N6169AUS/TR Images
  • Microchip Technology
  • Microchip Technology JAN1N6169AUS/TR
  • Buy JAN1N6169AUS/TR
  • JAN1N6169AUS/TR Price
  • JAN1N6169AUS/TR Distributor
  • JAN1N6169AUS/TR Supplier
  • JAN1N6169AUS/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER