Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JAN1N6169US/TR

Part No.:
JAN1N6169US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJAN1N6169US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,448

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JAN1N6169US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 98.8 V working standoff voltage (VWM), and 178.8 V clamping voltage (VC) at 8.4 A peak pulse current - deployed in avionics power rail protection and missile guidance interface circuits.

For engineers reviewing the JAN1N6169US/TR datasheet, JAN1N6169US/TR pinout, JAN1N6169US/TR application, or JAN1N6169US/TR equivalent, this part delivers MIL-PRF-19500/516 qualified transient suppression with Category 1 metallurgical bonds, triple-layer passivation, and radiation-hardened construction suitable for high-reliability aerospace and defense systems requiring guaranteed failure immunity under lightning-induced surges and ESD events.

Technical Context

This device operates as a bidirectional avalanche diode TVS, leveraging hard-glass hermetic sealing and tungsten slug terminations to sustain junction temperatures from –55 °C to +175 °C. Its 5.0 °C/W thermal resistance (junction-to-end cap) enables stable operation under repeated 10/1000 µs transients up to 1500 W without thermal runaway.

The JAN1N6169US/TR exhibits a temperature coefficient of breakdown voltage (αVBR) of 0.105 %/°C and maintains ≤5 µA standby current at 98.8 V VWM, ensuring minimal leakage in high-impedance sensing paths while delivering precise clamping at 178.8 V under 8.4 A IPP - critical for protecting downstream FPGAs and analog front-ends in hardened platforms.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Pulse Power (10/1000 µs) 1500 W - sustains single-event lightning surge energy per IEC61000-4-5 Level 3 without degradation
Working Standoff Voltage (VWM) 98.8 V - maximum continuous DC or repetitive peak voltage before conduction begins
Clamping Voltage (VC @ IPP) 178.8 V at 8.4 A - limits transient overvoltage to safe levels for 100 V-class logic and power ICs
Breakdown Voltage (VBR @ IBR) 123.5 V at 10 mA - defines sharp avalanche onset threshold for predictable turn-on behavior
Standby Current (ID @ VWM) ≤5 µA - negligible leakage in high-impedance bias networks and precision reference circuits
Temperature Coefficient (αVBR) 0.105 %/°C - enables accurate thermal derating across –55 °C to +175 °C operational range

Pinout & Package

SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) hermetically sealed glass package with tungsten slugs and tin/lead-plated copper terminals; no polarity marking due to bidirectional symmetry; weight ≈1100 mg; dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (symmetrical) Bidirectional avalanche junction Either end functions identically - no orientation required during placement; enables simplified layout in differential or AC-coupled lines
End Cap (both ends) Thermal and electrical termination Directly interfaces PCB copper for low-inductance surge current path and efficient heat dissipation via RθJEC = 5.0 °C/W

Key Features

Feature Design Value
Voidless hermetic glass seal Prevents moisture ingress and internal corrosion over 20+ year field life in humid, salt-laden environments
Category 1 metallurgical bonds Guarantees bond integrity under mechanical shock (MIL-STD-883 Method 2002) and thermal cycling (–55 °C to +125 °C, 1000 cycles)
Triple-layer passivation Eliminates surface leakage paths and prevents dendritic growth under high-humidity bias stress (85 °C/85% RH, 1000 hrs)
MIL-PRF-19500/516 qualification (JAN level) Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military reliability standards

Applications

Aerospace Power Distribution Missile Guidance Interface

Use Scenario: Protection of 100 V DC bus in satellite power management units against load dump and ESD events during launch vibration.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed directly across bus rails to limit transients to <180 V during 1500 W surges.

Use Value: Prevents latch-up in radiation-tolerant DC-DC controllers by maintaining clamping margin >20 V below absolute max rating.

Use Scenario: Surge suppression on RS-422 differential data lines connecting inertial measurement units (IMUs) to flight computers in tactical missiles.

IC Role / Device Role / Timing Role: Symmetric TVS pair (one per line) referenced to chassis ground, absorbing common-mode lightning-induced spikes.

Use Value: Enables uninterrupted serial communication during 10/1000 µs transients up to 1 kV, verified per MIL-STD-461G CS115.

Avionics Sensor Signal Conditioning Nuclear Command & Control Systems

Use Scenario: Guarding analog inputs of pressure transducers in fly-by-wire hydraulic control modules exposed to engine EMI.

IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) TVS placed at signal entry point to suppress fast-rising EFT bursts without loading sensor bridge.

Use Value: Maintains <0.01% full-scale error in 24-bit ADC acquisition chains by limiting transient-induced offset shift to <1 LSB.

Use Scenario: Hardening command receiver front-ends in hardened bunkers against EMP coupling through antenna feedlines.

IC Role / Device Role / Timing Role: First-stage clamping element in multi-stage protection network, shunting >90% of 5 kA/µs EMP current before MOV stages activate.

Use Value: Survives 100+ EMP events per MIL-STD-188-125-1 without parameter drift, confirmed by post-test VBR and VC verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6169AUS Commercial-grade version; same VWM, VC, and PPP but lacks MIL-PRF-19500/516 screening and JAN-level reliability testing Approved for non-mission-critical industrial controls; not cleared for flight hardware or nuclear C2 systems Select only when full military qualification is unnecessary and cost sensitivity outweighs long-term reliability requirements
JANTXV1N6169US Same die and package, but qualified to JANTXV level - adds extended temperature screening (–65 °C to +175 °C) and enhanced lot traceability Required for space-qualified payloads and strategic weapons where component pedigree must include full JANTXV test records Choose when mission assurance mandates JANTXV documentation and extended cold-start performance validation

Compared with JAN1N6169US/TR, the commercial 1N6169AUS reduces procurement cost but forfeits MIL-qualified screening, while JANTXV1N6169US extends environmental validation at higher unit cost - enabling tiered selection based on system criticality, lifecycle duration, and audit requirements.

Availability

JAN1N6169US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, missile guidance interface, avionics sensor signal conditioning, and nuclear command & control systems requiring stable component supply across extended production lifecycles.

Supply support for JAN1N6169US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The JAN1N6169US/TR belongs to Microsemi's military-qualified TVS diode family designed specifically for fail-safe transient suppression in mission-critical systems where zero tolerance for field failure is mandated by MIL-PRF-19500/516.

FAQ

What is the clamping voltage of JAN1N6169US/TR at its rated peak pulse current?

The JAN1N6169US/TR has a maximum clamping voltage (VC) of 178.8 V at 8.4 A peak pulse current (IPP) under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3019 and guarantees that downstream circuitry remains within safe operating limits during standardized surge events. The JAN1N6169US/TR achieves this clamping performance while maintaining tight VBR tolerance and low leakage, making it suitable for high-voltage analog and digital interfaces.

Is JAN1N6169US/TR RoHS compliant?

No, JAN1N6169US/TR is not RoHS compliant. It uses traditional tin/lead plating on copper terminals, consistent with MIL-PRF-19500/516 requirements for high-reliability solder joint integrity. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6169AUS), not in JAN-level parts. The JAN1N6169US/TR is intended for applications where solder joint reliability under thermal cycling and mechanical shock takes precedence over lead-free compliance.

What does the "JAN" prefix signify for JAN1N6169US/TR?

"JAN" denotes Joint Army-Navy qualification - the highest baseline reliability level under MIL-PRF-19500/516. For JAN1N6169US/TR, this includes 100% lot testing for parametric limits, burn-in, temperature cycling, and hermeticity verification. Unlike commercial or JANTX parts, JAN-level devices undergo stricter screening and are approved for use in manned aircraft, missile systems, and other applications where failure risk must be statistically bounded to less than 10−6 per hour.

Can JAN1N6169US/TR be used in bidirectional AC signal lines?

Yes, JAN1N6169US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior for positive and negative transients, making it ideal for protecting AC-coupled interfaces such as RS-422, MIL-STD-1553, or transformer-isolated power signals. Its SQ-MELF package allows zero-orientation placement, simplifying automated assembly in differential or floating circuits where JAN1N6169US/TR serves as a dual-quadrant voltage limiter.

What is the thermal resistance specification for JAN1N6169US/TR?

JAN1N6169US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured per MIL-STD-750 Method 1071. This low value enables effective heat transfer from the silicon junction to the PCB copper pads via the tungsten slugs and end-cap terminations. When mounted on ≥1 sq-in copper area, JAN1N6169US/TR supports continuous off-state power dissipation up to 5.0 W at TEC = 150 °C, with linear derating to zero at 175 °C - critical for sustained operation in enclosed avionics enclosures.

JAN1N6169US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
98.8V
Voltage - Breakdown (Min):
123.5V
Voltage - Clamping (Max) @ Ipp:
178.8V
Current - Peak Pulse (10/1000µs):
8.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JAN1N6169US/TR FAQ

1.How can I place an order for JAN1N6169US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6169US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6169US/TR reliable?

The price and inventory of JAN1N6169US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6169US/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6169US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6169US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6169US/TR?

JAN1N6169US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6169US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6169US/TR?

For technical support, including JAN1N6169US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6169US/TR requirements.

6.How does Aetrix verify that JAN1N6169US/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6169US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6169US/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6169US/TR?

All JAN1N6169US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6169US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6169US/TR part is unused and in its original packaging.

Return procedure for JAN1N6169US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N6169US/TR Tags

  • JAN1N6169US/TR
  • JAN1N6169US/TR PDF
  • JAN1N6169US/TR Datasheet
  • JAN1N6169US/TR Specifications
  • JAN1N6169US/TR Images
  • Microchip Technology
  • Microchip Technology JAN1N6169US/TR
  • Buy JAN1N6169US/TR
  • JAN1N6169US/TR Price
  • JAN1N6169US/TR Distributor
  • JAN1N6169US/TR Supplier
  • JAN1N6169US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER