Microchip Technology JAN1N6170AUS/TR

Overview

JAN1N6170AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 114.0 V working standoff voltage (V_WM), and 206.3 V clamping voltage (V_C) at 7.3 A peak pulse current. It serves as primary overvoltage protection in high-reliability avionics power interfaces.

For engineers reviewing the JAN1N6170AUS/TR datasheet, JAN1N6170AUS/TR pinout, JAN1N6170AUS/TR application, or JAN1N6170AUS/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JAN-level qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-5 lightning surge compliance up to select levels.

Technical Context

This TVS operates bidirectionally with no polarity marking and relies on hard-glass encapsulation with internal Category 1 metallurgical bonds for radiation hardness and long-term reliability under thermal cycling. Its breakdown voltage is 142.5 V at 8 mA test current, with a temperature coefficient of 0.105 %/°C.

The device delivers 1500 W peak pulse power under standardized 10/1000 µs waveform conditions and maintains clamping performance across -55 °C to +175 °C junction temperature range. Standby leakage remains ≤5 µA at rated V_WM, supporting low-power monitoring circuits.

Key Specifications

Pinout & Package

SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) hermetically sealed glass package with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional operation confirmed.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with JAN1N6170AUS/TR, JAN1N6169AUS/TR offers tighter clamping at lower voltage but sacrifices standoff margin, while JAN1N6171AUS/TR extends voltage headroom at the cost of reduced surge current capacity-selection depends on whether system design prioritizes clamping precision or voltage margin.

Availability

JAN1N6170AUS/TR is available at Aetrix Electronics and suitable for avionics power bus protection, military vehicle DC distribution, spacecraft payload interface, and naval radar power conditioning requiring stable component supply across extended product lifecycles.

Supply support for JAN1N6170AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec qualified components.

The 1N6138AUS–1N6173AUS series was developed specifically for military and space applications demanding zero-failure transient protection under extreme thermal, mechanical, and radiation stress conditions.

FAQ

What is the clamping voltage of JAN1N6170AUS/TR under a 10/1000 µs surge?

The clamping voltage (V_C) of JAN1N6170AUS/TR is 206.3 V at 7.3 A peak pulse current under the standardized 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and represents the maximum voltage seen by protected circuitry during worst-case transient events. The JAN1N6170AUS/TR maintains this clamping performance across its full -55 °C to +175 °C operating junction temperature range.

Is JAN1N6170AUS/TR RoHS compliant?

No, JAN1N6170AUS/TR is not RoHS compliant. Per the nomenclature table in Microsemi's T4-LDS-0278-1 datasheet, the "e3" RoHS designation applies only to commercial-grade versions of the 1N61xxAUS series. The JAN prefix indicates military qualification under MIL-PRF-19500/516, which mandates tin/lead plating and excludes RoHS-compliant matte-tin finishes for reliability reasons.

What does the "A" suffix mean in JAN1N6170AUS/TR?

The "A" suffix in JAN1N6170AUS/TR denotes standard voltage tolerance: ±5% on V_BR, ±5% on V_C, and ±5% on I_PP. Non-A versions have 5% higher V_C, 5% lower minimum V_BR, and 5% lower I_PP. This distinction is critical for design margining-JAN1N6170AUS/TR guarantees V_WM ≥114.0 V and V_C ≤206.3 V, whereas the non-A variant would specify V_C ≤216.6 V.

Can JAN1N6170AUS/TR be used in surface-mount reflow processes?

Yes, JAN1N6170AUS/TR supports standard SMT reflow with a maximum solder temperature of 260 °C for 10 seconds, as specified in the Absolute Maximum Ratings table. Its SQ-MELF glass body and tungsten slug construction withstand thermal shock during lead-free reflow profiles. However, due to its hermetic glass package, wave soldering is not recommended-only reflow or hand-soldering with controlled thermal mass is permitted.

What is the thermal resistance from junction to end cap for JAN1N6170AUS/TR?

The thermal resistance from junction to end cap (R_θJEC) for JAN1N6170AUS/TR is 5.0 °C/W, as published in the Maximum Ratings table. This low value enables efficient heat transfer directly from the silicon die to the PCB copper via the end-cap solder joints. Designers must ensure full-surface end-cap solder coverage and adequate copper area (≥100 mm² per end) to realize this thermal performance in practice.