My Inquiry
My Account
Microchip Technology JAN1N6170US/TR
- Part No.:
- JAN1N6170US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6170US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,354
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6170US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 114.0 V working standoff voltage (VWM), 206.3 V clamping voltage (VC) at 7.3 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in high-reliability military avionics power rail protection.
For engineers reviewing the JAN1N6170US/TR datasheet, JAN1N6170US/TR pinout, JAN1N6170US/TR application, or JAN1N6170US/TR equivalent, this part delivers verified ESD/EFT/IEC61000-4-5 secondary lightning protection with Category 1 metallurgical bonds, hard-glass construction, and -55°C to +175°C junction temperature operation.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses triple-layer passivation on a tungsten-slug glass package. Its breakdown voltage is 142.5 V minimum at 8 mA test current, with 0.105 %/°C temperature coefficient - enabling stable clamping across extended thermal environments.
The device sustains 1500 W peak pulse power under 10/1000 µs transients while limiting voltage to ≤206.3 V at 7.3 A. Thermal resistance from junction to end cap is 5.0 °C/W, supporting robust power dissipation in constrained aerospace PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 114.0 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins. |
| V(BR) min | 142.5 V @ 8 mA - Confirmed minimum breakdown threshold ensuring predictable turn-on margin. |
| VC @ IPP | 206.3 V @ 7.3 A - Clamped voltage during 10/1000 µs surge, defining worst-case downstream voltage stress. |
| PPP | 1500 W - Peak transient energy handling capacity per IEC61000-4-5 Level 3/4 compliance. |
| TJ Range | -55°C to +175°C - Full military-grade operating range without derating up to 150°C end-cap temp. |
| RθJEC | 5.0 °C/W - Enables direct thermal path design to chassis or heat-spreading copper planes. |
| ID @ VWM | 5 µA - Ultra-low leakage preserves signal integrity and minimizes standby power loss. |
Pinout & Package
Package: SQ-MELF (C-type), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking; weight ≈1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | Identical terminal behavior in both directions - no orientation required during placement. |
| End Cap (glass body contact) | Thermal interface | Primary heat transfer surface to PCB or heatsink; RθJEC = 5.0 °C/W measured to this point. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and long-term parameter drift in humid or vacuum environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under shock/vibration per MIL-STD-883, critical for flight-critical systems. |
| Triple-layer passivation | Prevents surface leakage and corrosion-induced failure in salt fog or high-bias operational conditions. |
| MIL-PRF-19500/516 JAN qualification | Validated screening including burn-in, temperature cycling, and lot acceptance testing per military standard. |
Applications
| Avionics Power Distribution | Tactical Radio Front-End Protection |
|---|---|
Use Scenario: 28 V DC aircraft bus exposed to load dump and induced lightning transients. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across input rails upstream of DC-DC converters. Use Value: Limits transient overvoltage to ≤206.3 V, preventing damage to downstream FETs and controllers rated for 200 V max. |
Use Scenario: RF amplifier input stage subjected to ESD events during field antenna connection. IC Role / Device Role / Timing Role: Fast-response TVS shunting ESD current before it reaches sensitive GaAs MMICs. Use Value: Sub-1 ns response time and 5 µA leakage preserve RF gain flatness and noise figure stability. |
| Missile Guidance Control Unit | Naval Shipboard Sensor Interface |
Use Scenario: Analog sensor signal conditioning circuitry in inertial measurement units (IMUs). IC Role / Device Role / Timing Role: Low-leakage transient suppressor on ±15 V analog supply rails feeding op-amps and ADCs. Use Value: 5 µA ID ensures <1 µV offset error contribution, maintaining sub-0.1% measurement accuracy. |
Use Scenario: MIL-STD-1553B data bus termination points exposed to shipboard EFT coupling. IC Role / Device Role / Timing Role: Rail-to-rail clamp protecting bus transceivers from burst-mode interference. Use Value: 1500 W PPP rating withstands repeated 5 kHz EFT bursts without parametric shift or wear-out. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6169US/TR | VWM = 98.8 V, VC = 178.8 V @ 8.4 A - lower clamping voltage but reduced standoff range. | Better suited for 24 V systems where tighter clamping margin is prioritized over higher voltage tolerance. | Select when system nominal voltage is ≤28 V and clamping headroom must be minimized. |
| JAN1N6171US/TR | VWM = 121.6 V, VC = 218.4 V @ 6.9 A - higher standoff but increased clamping voltage and reduced IPP. | Applicable in 115 VAC-derived DC rails where higher VWM prevents false triggering during line surges. | Choose for 100–120 V DC intermediate bus protection requiring extended standoff margin. |
Compared with JAN1N6170US/TR, JAN1N6169US/TR offers tighter clamping at lower voltage systems, while JAN1N6171US/TR extends standoff capability for higher-voltage rails - neither is pin-compatible due to identical SQ-MELF packaging but differing electrical thresholds requiring circuit revalidation.
Availability
JAN1N6170US/TR is available at Aetrix Electronics and suitable for avionics power distribution, tactical radio front-end protection, missile guidance control units, and naval shipboard sensor interfaces requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6170US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
JAN1N6170US/TR belongs to Microsemi's military-qualified TVS family engineered specifically for MIL-PRF-19500/516-compliant transient suppression in safety-critical platforms where failure is not an option.
FAQ
What is the clamping voltage specification for JAN1N6170US/TR?
The clamping voltage (VC) of JAN1N6170US/TR is 206.3 V measured at 7.3 A peak pulse current (IPP) under a 10/1000 µs waveform. This value defines the maximum voltage seen by downstream circuitry during a standardized surge event and is validated per MIL-PRF-19500/516 test requirements. JAN1N6170US/TR maintains this clamping performance across its full -55°C to +175°C operating junction temperature range.
Is JAN1N6170US/TR RoHS compliant?
No, JAN1N6170US/TR is not RoHS compliant. The "e3" RoHS designation applies only to commercial-grade versions of this family (e.g., 1N6170AUS); the JAN-level qualification requires tin/lead plating per MIL-STD-202 and MIL-STD-750, and RoHS compliance is explicitly excluded for this reliability grade. JAN1N6170US/TR uses standard tin/lead terminal finish for enhanced solder joint reliability in high-vibration environments.
What does the "JAN" prefix indicate for JAN1N6170US/TR?
"JAN" denotes Joint Army-Navy qualification per MIL-PRF-19500/516, the highest reliability tier in this TVS series. JAN1N6170US/TR undergoes full military screening including extended burn-in, temperature cycling, and lot acceptance testing - exceeding commercial and JANTX-level requirements. This prefix confirms suitability for mission-critical applications where zero defect rates and long-term parametric stability are mandatory.
How is thermal management implemented for JAN1N6170US/TR?
JAN1N6170US/TR relies on end-cap conduction for thermal dissipation, with a specified junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. Effective thermal management requires direct metal contact between the glass body's end caps and a thermally conductive surface - such as a large copper pour or chassis-mounted heatsink. PCB layout must avoid solder mask over end-cap contact areas to maintain low thermal impedance.
Does JAN1N6170US/TR require polarity-aware placement on the PCB?
No, JAN1N6170US/TR is a bidirectional TVS with no polarity marking and symmetric conduction characteristics in both directions. Its SQ-MELF package has identical electrical behavior regardless of orientation, eliminating placement errors during automated assembly. This symmetry is confirmed in the nomenclature section and electrical characteristics table, where V(BR) and VC values are specified without anode/cathode distinction.
JAN1N6170US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 114V
- Voltage - Breakdown (Min):
- 142.5V
- Voltage - Clamping (Max) @ Ipp:
- 206.3V
- Current - Peak Pulse (10/1000µs):
- 7.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6170US/TR FAQ
1.How can I place an order for JAN1N6170US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6170US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6170US/TR reliable?
The price and inventory of JAN1N6170US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6170US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6170US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6170US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6170US/TR?
JAN1N6170US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6170US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6170US/TR?
For technical support, including JAN1N6170US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6170US/TR requirements.
6.How does Aetrix verify that JAN1N6170US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6170US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6170US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6170US/TR?
All JAN1N6170US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6170US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6170US/TR part is unused and in its original packaging.
Return procedure for JAN1N6170US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6170US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
