Microchip Technology JAN1N6171AUS/TR
- Part No.:
- JAN1N6171AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6171AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:3,107
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6171AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF (C) package, rated for 1500 W peak pulse power (10/1000 µs), 121.6 V working standoff voltage (VWM), and 218.4 V clamping voltage (VC @ 6.9 A). It operates across –55 °C to +175 °C and serves as primary surge protection in avionics power interfaces.
For engineers reviewing the JAN1N6171AUS/TR datasheet, JAN1N6171AUS/TR pinout, JAN1N6171AUS/TR application, or JAN1N6171AUS/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JAN-level qualification, Category 1 metallurgical bonds, triple-layer passivation, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced transients.
Technical Context
This TVS diode uses a hard-glass, voidless hermetic construction with tungsten slugs and internal Category 1 metallurgical bonds-enabling radiation hardness per MicroNote 050 and immunity to MIL-STD-750 Method 1020 ESD. Its bidirectional architecture provides symmetrical clamping without polarity marking.
It delivers 1500 W peak pulse power at 10/1000 µs waveform, with thermal resistance junction-to-end cap (RθJEC) of 5.0 °C/W and linear derating above 150 °C end-cap temperature. Standby current is ≤5 µA at 121.6 VWM, and breakdown occurs at minimum 152.0 V @ 8 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 121.6 V - Maximum continuous reverse voltage before leakage exceeds 5 µA; sets operating margin below clamping threshold. |
| VC @ IPP | 218.4 V @ 6.9 A - Clamped voltage during 10/1000 µs surge; defines maximum stress on protected downstream circuitry. |
| PPP | 1500 W - Peak pulse power handling capability; enables robust protection against high-energy transients like lightning surges. |
| V(BR) min | 152.0 V @ 8 mA - Minimum breakdown voltage; ensures reliable conduction onset above VWM with defined margin. |
| TJ/TSTG | –55 °C to +175 °C - Extended junction/storage temperature range; supports operation in harsh military and aerospace environments. |
| RθJEC | 5.0 °C/W - Low thermal resistance to end cap; allows efficient heat transfer to PCB copper or heatsink in high-power transient events. |
Pinout & Package
Package: SQ-MELF (C) - Voidless hermetically sealed hard-glass case with tungsten slugs and tin/lead-plated copper terminals; square-end-cap geometry enables precise automated placement and high mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | No polarity marking; symmetric conduction in either direction; both terminals serve identical clamping function. |
| End Cap (glass body contact) | Thermal interface | Primary heat dissipation path to PCB; requires direct thermal pad contact for RθJEC = 5.0 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity constraints. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock-critical for MIL-PRF-19500/516 JAN reliability level. |
| Triple-layer passivation | Prevents surface leakage and moisture ingress, maintaining low standby current (<5 µA) over lifetime in humid or contaminated environments. |
| MIL-PRF-19500/516 qualification | Validates manufacturing process control, screening, and testing per military standards-ensuring zero-defect delivery for mission-critical systems. |
Applications
| Avionics Power Bus Protection | Ground Vehicle Control Module Inputs |
|---|---|
Use Scenario: Protecting 28 V DC power distribution nodes in flight control computers from load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Primary bidirectional TVS clamp placed directly at connector entry point to limit transient energy entering the board. Use Value: Withstands 1500 W pulses and clamps to 218.4 V, preventing damage to downstream DC-DC converters and FPGAs rated for ≤250 V absolute max. | Use Scenario: Safeguarding CAN and sensor inputs in armored vehicle engine control units exposed to ISO 7637-2 pulse 5a/b. IC Role / Device Role / Timing Role: Standoff-clamp TVS deployed across differential pairs and supply rails to suppress coupled transients without affecting signal integrity. Use Value: 121.6 VWM aligns with 24 V nominal systems; low 5 µA leakage avoids loading sensitive analog front-ends at cold start. |
| Satellite Payload Power Conditioning | Tactical Radio RF Front-End Bias Lines |
Use Scenario: Shielding DC-DC converter inputs in LEO satellite payloads from secondary lightning effects per IEC61000-4-5 Level 4. IC Role / Device Role / Timing Role: High-reliability transient suppressor mounted on rigid-flex interconnects between solar array regulators and bus converters. Use Value: Radiation-hardened construction and –55 °C to +175 °C operation ensure uninterrupted function during orbital thermal cycling and proton exposure. | Use Scenario: Protecting bias feed lines to GaN PA stages in manpack radios subjected to ESD per IEC61000-4-2 ±15 kV contact discharge. IC Role / Device Role / Timing Role: Low-capacitance, fast-response TVS placed adjacent to RF connector to shunt ESD before reaching sensitive active devices. Use Value: Hermetic glass package eliminates moisture-related parameter drift; 218.4 VC prevents gate oxide rupture in 28 V bias circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6170AUS/TR | 114.0 VWM, 206.3 VC @ 7.3 A, 142.5 V(BR) min - lower clamping and standoff vs. JAN1N6171AUS/TR. | Preferred where system max operating voltage is ≤110 V; tighter margin between VWM and VC improves protection headroom. | Select when design requires lower clamping voltage and can tolerate reduced standoff margin relative to 121.6 V. |
| JAN1N6172AUS/TR | 136.8 VWM, 245.7 VC @ 6.1 A, 171.0 V(BR) min - higher standoff and clamping than JAN1N6171AUS/TR. | Suitable for 130–150 V nominal systems (e.g., 48 V telecom backup buses); wider VWM–VC gap increases let-through energy. | Choose for higher-voltage DC systems needing extended standoff while retaining MIL-PRF-19500/516 JAN qualification. |
Compared with JAN1N6171AUS/TR, JAN1N6170AUS/TR offers lower clamping at reduced standoff, improving protection for sub-115 V systems, while JAN1N6172AUS/TR extends operational range to 136.8 VWM-making it optimal for higher-bus-voltage platforms where tighter VC margin is less critical than voltage headroom.
Availability
JAN1N6171AUS/TR is available at Aetrix Electronics and suitable for avionics power bus protection, ground vehicle control module inputs, satellite payload power conditioning, and tactical radio RF front-end bias line protection requiring stable component supply and full traceability.
Supply support for JAN1N6171AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N6138AUS–1N6173AUS series was developed specifically to meet MIL-PRF-19500/516 requirements for voidless hermetic TVS diodes in high-survivability systems where failure is not an option.
FAQ
What is the clamping voltage of JAN1N6171AUS/TR and how is it measured?
The clamping voltage (VC) of JAN1N6171AUS/TR is 218.4 V, measured at a peak pulse current (IPP) of 6.9 A using a standardized 10/1000 µs double-exponential waveform. This value reflects the maximum voltage that appears across the device during a surge event and defines the upper voltage limit imposed on protected circuitry. The test condition is specified in the Microsemi T4-LDS-0278-1 datasheet and verified per MIL-PRF-19500/516 test protocols.
Is JAN1N6171AUS/TR RoHS compliant?
No, JAN1N6171AUS/TR is not RoHS compliant. Per the Microsemi nomenclature guide, the "e3" RoHS designation applies only to commercial-grade versions of this family; JAN-level parts like JAN1N6171AUS/TR use standard tin/lead plating and are exempt from RoHS due to their military qualification status and intended use in high-reliability applications.
What does the "A" suffix in JAN1N6171AUS/TR indicate?
The "A" suffix in JAN1N6171AUS/TR denotes the standard voltage tolerance version: it specifies guaranteed minimum breakdown voltage (152.0 V), maximum clamping voltage (218.4 V), and minimum peak pulse current (6.9 A). Non-A versions have 5% higher VC, 5% lower minimum V(BR), and 5% lower IPP-making the "A" variant the preferred choice for designs requiring tighter parametric control and higher surge margin.
Can JAN1N6171AUS/TR be used in surface-mount reflow processes?
Yes, JAN1N6171AUS/TR supports standard SMT reflow with a peak solder temperature of 260 °C for 10 seconds, as confirmed in the Microsemi maximum ratings table. Its hard-glass SQ-MELF package and tungsten slug construction withstand thermal shock typical of leaded and lead-free profiles. Proper pad layout per the datasheet's mechanical drawing is required to ensure mechanical stability and thermal performance.
How does JAN1N6171AUS/TR differ from commercial-grade 1N6171AUS?
JAN1N6171AUS/TR differs from commercial-grade 1N6171AUS in three key ways: it is screened and tested to MIL-PRF-19500/516 JAN-level reliability standards, uses non-RoHS tin/lead terminations, and undergoes additional environmental and electrical screening including burn-in and lot acceptance testing. These enhancements ensure zero-defect delivery and long-term stability in mission-critical deployments where commercial parts are insufficient.
JAN1N6171AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 121.6V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 218.4V
- Current - Peak Pulse (10/1000µs):
- 6.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6171AUS/TR FAQ
1.How can I place an order for JAN1N6171AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6171AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6171AUS/TR reliable?
The price and inventory of JAN1N6171AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6171AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6171AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6171AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6171AUS/TR?
JAN1N6171AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6171AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6171AUS/TR?
For technical support, including JAN1N6171AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6171AUS/TR requirements.
6.How does Aetrix verify that JAN1N6171AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6171AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6171AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6171AUS/TR?
All JAN1N6171AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6171AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6171AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6171AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6171AUS/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

