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Microchip Technology JAN1N6171US/TR
- Part No.:
- JAN1N6171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6171US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,163
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Product details
Overview
JAN1N6171US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 121.6 V working standoff voltage (VWM), 218.4 V clamping voltage (VC) at 6.9 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power bus protection and radar front-end surge suppression.
For engineers reviewing the JAN1N6171US/TR datasheet, JAN1N6171US/TR pinout, JAN1N6171US/TR application, or JAN1N6171US/TR equivalent, this part delivers military-grade transient immunity in compact SQ-MELF packaging, supports IEC61000-4-2/4-4/4-5 compliance, and requires no polarity orientation during placement due to bidirectional symmetry.
Technical Context
This TVS operates as a voltage-clamped shunt protector: when transient voltage exceeds its 152.0 V minimum breakdown voltage (V(BR)) at 8 mA, it enters low-impedance conduction to divert surge energy away from downstream circuitry. Its hard-glass construction with tungsten slugs ensures mechanical robustness and thermal stability across -55 °C to +175 °C junction temperature range.
The device uses internal Category 1 metallurgical bonds and triple-layer passivation to sustain high-reliability operation under repeated 1500 W surges. It exhibits a 0.105 %/°C temperature coefficient of breakdown voltage (αV(BR)), enabling predictable clamping behavior over wide ambient conditions without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 121.6 V - maximum continuous reverse voltage the device blocks without leakage exceeding 5 µA; sets operating margin below breakdown threshold. |
| V(BR) min | 152.0 V @ 8 mA - guaranteed minimum voltage at which avalanche conduction initiates; defines lower bound of protection trigger point. |
| VC @ IPP | 218.4 V @ 6.9 A - clamped voltage during standardized 10/1000 µs surge; determines maximum stress imposed on protected ICs. |
| PPP | 1500 W - peak impulse power handling capability; enables survival of lightning-induced transients per IEC61000-4-5 Level 3. |
| ID @ VWM | 5 µA - standby leakage current at rated standoff voltage; ensures minimal power loss and signal integrity in always-on systems. |
| TJ Range | -55 °C to +175 °C - operational junction temperature span; supports deployment in engine bay, space-grade, and missile guidance electronics. |
| RθJEC | 5.0 °C/W - thermal resistance from junction to end cap; allows direct heat sinking via PCB copper pads or metal fixtures. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm); weight ≈ 1100 mg; RoHS-compliant matte-tin plating available only on commercial versions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking - symmetrical structure allows either terminal to serve as anode or cathode depending on transient polarity. |
| End Cap (both ends) | Thermal interface & mechanical anchor | Directly contacts PCB copper for heat dissipation; tungsten slug provides low RθJEC and mechanical rigidity during thermal cycling. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under shock, vibration, and thermal cycling per MIL-STD-883 Method 2011. |
| Triple-layer passivation | Prevents surface leakage and corrosion-induced parameter drift in salt fog or atomic oxygen exposure. |
| MIL-PRF-19500/516 qualification | Validated reliability for JAN-level screening including burn-in, temperature cycling, and hermeticity testing. |
Applications
| Aerospace Power Distribution | Naval Radar Front-End Protection |
|---|---|
Use Scenario: Protecting 28 V DC aircraft bus from load dump and ESD events during ground servicing and flight control actuation. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed across bus rails upstream of DC-DC converters and motor drivers. Use Value: Clamps transients to ≤218.4 V within nanoseconds, preventing latch-up in FPGAs and gate drivers while maintaining <5 µA standby leakage. |
Use Scenario: Shielding RF receiver LNA inputs from induced surges during lightning strikes near shipboard radar arrays. IC Role / Device Role / Timing Role: Bidirectional voltage clamp mounted directly at antenna feed-through connector interface. Use Value: Withstands 1500 W pulses without degradation, preserving signal integrity and avoiding false alarms caused by transient-induced saturation. |
| Missile Guidance Electronics | Satellite Power Conditioning |
Use Scenario: Safeguarding inertial measurement unit (IMU) power rails against pyroshock-induced transients during stage separation. IC Role / Device Role / Timing Role: Primary surge arrestor on 5 V and 15 V regulated supplies feeding MEMS gyros and ADCs. Use Value: Operates reliably from -55 °C to +175 °C with zero derating up to 150 °C end-cap temperature, ensuring mission-critical continuity. |
Use Scenario: Protecting solar array regulator inputs from electrostatic discharge during orbital eclipse transitions. IC Role / Device Role / Timing Role: Radiation-hardened TVS integrated into redundant power management module input stage. Use Value: Inherently radiation-tolerant per MicroNote 050; maintains VWM and VC specs after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6170US/TR | 114.0 V VWM, 206.3 V VC @ 7.3 A IPP, 0.105 %/°C αV(BR) | Lower clamping voltage but reduced standoff margin; suited for 100 V nominal systems. | Select when system operating voltage is ≤110 V and tighter clamping is prioritized over higher VWM headroom. |
| JAN1N6172US/TR | 136.8 V VWM, 245.7 V VC @ 6.1 A IPP, 0.110 %/°C αV(BR) | Higher standoff voltage but elevated clamping; appropriate for 125–140 V bus architectures. | Choose for 130 V systems where extended VWM margin outweighs higher VC-induced stress on downstream components. |
Compared with JAN1N6171US/TR, JAN1N6170US/TR offers lower clamping at reduced standoff, while JAN1N6172US/TR extends voltage margin at the cost of higher clamping stress - selection depends on whether system design prioritizes protection threshold precision or operating voltage headroom.
Availability
JAN1N6171US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, naval radar front-end protection, and missile guidance electronics requiring stable component supply under long-lifecycle, high-reliability procurement programs.
Supply support for JAN1N6171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened, hermetic, and MIL-spec qualified components.
JAN1N6171US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in mission-critical platforms where failure is not an option - emphasizing hermeticity, surge endurance, and parametric stability across extreme environments.
FAQ
What is the working standoff voltage (VWM) specification for JAN1N6171US/TR?
The JAN1N6171US/TR has a rated working standoff voltage (VWM) of 121.6 V - the maximum continuous DC or repetitive peak voltage it can block while maintaining leakage current ≤5 µA. This value is derived from the 152.0 V minimum breakdown voltage (V(BR)) with an 80% derating factor, ensuring reliable operation below avalanche onset in harsh environments.
Is JAN1N6171US/TR compatible with lead-free reflow soldering processes?
Yes, JAN1N6171US/TR supports lead-free reflow with a maximum solder temperature of 260 °C for 10 seconds, as specified in the Microsemi datasheet. Its hard-glass SQ-MELF package and tungsten slug construction withstand thermal shock without cracking or delamination, making it suitable for standard Pb-free assembly lines used in defense manufacturing.
Does JAN1N6171US/TR require polarity-aware placement on the PCB?
No, JAN1N6171US/TR is a bidirectional TVS with symmetrical electrical characteristics - both terminals function identically regardless of voltage polarity. There is no anode/cathode marking, and the device clamps transients equally in either direction, simplifying layout and eliminating orientation errors during automated placement.
How does JAN1N6171US/TR meet IEC61000-4-5 surge immunity requirements?
JAN1N6171US/TR delivers 1500 W peak pulse power for the 10/1000 µs waveform defined in IEC61000-4-5, enabling it to suppress Level 3 (2 kV line-to-earth, 1 kV line-to-line) surges commonly encountered in industrial and military power systems. Its 218.4 V clamping voltage ensures protected circuits remain below damage thresholds during standardized surge testing.
What is the thermal resistance characteristic of JAN1N6171US/TR, and how does it impact heatsinking?
JAN1N6171US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, meaning each watt of dissipated surge energy raises the junction temperature by 5 °C above the end-cap temperature. This low value enables effective passive cooling through direct contact with large copper pads or metal chassis, supporting reliable operation even under repeated surge events without active heatsinking.
JAN1N6171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 121.6V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 218.4V
- Current - Peak Pulse (10/1000µs):
- 6.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6171US/TR FAQ
1.How can I place an order for JAN1N6171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6171US/TR reliable?
The price and inventory of JAN1N6171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6171US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6171US/TR?
JAN1N6171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6171US/TR?
For technical support, including JAN1N6171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6171US/TR requirements.
6.How does Aetrix verify that JAN1N6171US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6171US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6171US/TR?
All JAN1N6171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6171US/TR part is unused and in its original packaging.
Return procedure for JAN1N6171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6171US/TR Tags
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