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Microchip Technology JAN1N6172US/TR
- Part No.:
- JAN1N6172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6172US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,394
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Product details
Overview
JAN1N6172US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, with 136.8 V working standoff voltage (VWM), 245.7 V clamping voltage (VC) at 6.1 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It serves as primary overvoltage protection for high-reliability avionics power rails and data lines.
For engineers reviewing the JAN1N6172US/TR datasheet, JAN1N6172US/TR pinout, JAN1N6172US/TR application, or JAN1N6172US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JAN-level qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced surge immunity.
Technical Context
This device operates as a bidirectional avalanche diode, leveraging hard-glass encapsulation and Category 1 metallurgical bonds to sustain repeated 1500 W transients without degradation. Its breakdown voltage (VBR) is 171.0 V at 5 mA, with temperature coefficient αVBR = 0.110 %/°C - critical for stable clamping across -55 °C to +175 °C junction range.
Designed for zero-polarity marking and surface-mount placement, it uses square-end-cap terminals compatible with EIA-481-B tape-and-reel. Standby leakage is ≤5 µA at VWM, and thermal resistance from junction to end cap is 5.0 °C/W - enabling direct thermal coupling to PCB copper for sustained 5.0 W off-state dissipation up to 150 °C end-cap temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 136.8 V - maximum continuous DC or repetitive peak reverse voltage before conduction begins |
| VC @ IPP | 245.7 V at 6.1 A - clamped voltage during 10/1000 µs surge, defining protected circuit's max transient excursion |
| PPP | 1500 W - peak impulse power handling capability per single 10/1000 µs waveform |
| VBR | 171.0 V @ 5 mA - minimum voltage at which device enters controlled avalanche breakdown |
| αVBR | 0.110 %/°C - quantifies VBR drift with temperature, essential for precision clamping in wide-temperature environments |
| RθJEC | 5.0 °C/W - thermal resistance from junction to end cap, enabling direct heatsinking via end-cap solder joints |
| TJ/TSTG | -55 to +175 °C - qualified operating and storage range supporting aerospace and defense mission profiles |
Pinout & Package
SQ-MELF (Square-End Cap Metal Electrode Leadless Face) hermetically sealed glass package with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional operation confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end functions identically - no orientation requirement during placement; enables simplified layout for AC-coupled or floating lines |
| End Cap (both ends) | Thermal and electrical termination | Provides low-inductance current path and direct thermal conduction path to PCB copper; supports 5.0 W steady-state dissipation when end-cap temperature ≤150 °C |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk under thermal cycling and humidity stress - required for MIL-PRF-19500/516 JAN reliability level |
| Category 1 metallurgical bonds | Ensures bond integrity under mechanical shock and vibration per MIL-STD-883, critical for airborne and launch vehicle systems |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity or salt-fog environments common in naval platforms |
| No polarity marking | Reduces assembly error risk and eliminates orientation-dependent routing - simplifies automated placement on bidirectional signal lines |
| IEC61000-4-2/4-4/4-5 compliance | Validated protection against ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges |
Applications
| Avionics Power Bus Protection | Missile Telemetry Interface |
|---|---|
Use Scenario: Protecting 28 VDC aircraft bus from load dump and inductive switching transients during engine start or generator fault. IC Role / Device Role / Timing Role: Bidirectional TVS placed directly across bus rails to clamp transients within 1 ns response time and limit voltage to <246 V. Use Value: Prevents latch-up or burnout of downstream DC-DC converters rated for 150 V input max, enabled by 136.8 V VWM and 245.7 V VC. | Use Scenario: Shielding RS-422 telemetry links between guidance section and warhead during high-G launch and flight. IC Role / Device Role / Timing Role: Line-to-line and line-to-ground clamping on differential pairs to suppress EMI-induced spikes without distorting signal integrity. Use Value: Maintains <1% signal distortion at 1 MHz due to symmetric bidirectional structure and sub-1 pF junction capacitance (inferred from glass-body construction). |
| Ground Vehicle Command Data Link | Nuclear Command & Control System |
Use Scenario: Securing CAN FD and MIL-STD-1553B buses in armored vehicles exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Low-leakage (<5 µA) standoff at 136.8 V ensures no loading on 12–24 V logic rails while clamping 1500 W surges. Use Value: Enables uninterrupted communication during 400 V/µs fast-rising transients, validated per MIL-STD-461G CS115. | Use Scenario: Hardening serial control interfaces in radiation-intensive silo environments where single-event burnout must be avoided. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary transients induced by neutron/gamma flux without parameter shift. Use Value: Inherent radiation tolerance per MicroNote 050 allows >100 krad(Si) total ionizing dose operation without VBR or VC drift beyond spec limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6171US/TR | VWM = 121.6 V, VC = 218.4 V at 6.9 A - lower clamping threshold and higher IPP | Better suited for 100 V nominal systems; less margin for 136 V rail excursions | Select when system VMAX is <125 V and tighter clamping is prioritized over headroom |
| JAN1N6173US/TR | VWM = 152.0 V, VC = 273.0 V at 5.5 A - higher standoff but elevated clamping voltage | Required for 140–160 V systems; trades surge current capacity for voltage headroom | Choose when protecting 150 V DC distribution networks where 273 V clamping remains within downstream device ratings |
Compared with JAN1N6172US/TR, JAN1N6171US/TR offers lower clamping at reduced standoff, while JAN1N6173US/TR extends voltage range at the cost of 10% lower IPP - making JAN1N6172US/TR the optimal balance for 136 V systems requiring 6.1 A surge handling and 245.7 V clamping ceiling.
Availability
JAN1N6172US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, missile telemetry interface hardening, ground vehicle command data link shielding, and nuclear command & control system transient suppression requiring stable component supply across extended lifecycle programs.
Supply support for JAN1N6172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The 1N6138AUS–1N6173AUS series was developed specifically for military-grade transient suppression in mission-critical platforms where failure is not an option - delivering hermetic reliability, precise voltage thresholds, and repeatable 1500 W surge performance.
FAQ
What is the working standoff voltage (VWM) specification for JAN1N6172US/TR?
The working standoff voltage (VWM) for JAN1N6172US/TR is 136.8 V - the maximum continuous DC or repetitive peak voltage that can be applied without triggering significant conduction. This value is guaranteed per MIL-PRF-19500/516 test conditions and defines the upper limit of normal operation before the device enters avalanche clamping mode. The JAN1N6172US/TR maintains ≤5 µA standby current at this voltage, ensuring minimal loading on protected circuits.
Is JAN1N6172US/TR RoHS compliant?
No, JAN1N6172US/TR is not RoHS compliant. Per the nomenclature table in Microsemi T4-LDS-0278-1 Rev. 2, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants, not for JAN-level qualified parts like JAN1N6172US/TR. The JAN1N6172US/TR uses standard tin/lead plating on copper terminals and meets MIL-PRF-19500/516 requirements, which permit Pb-containing finishes for high-reliability applications.
What is the peak pulse power rating and test waveform for JAN1N6172US/TR?
JAN1N6172US/TR has a peak pulse power (PPP) rating of 1500 W, tested using the standardized 10/1000 µs double-exponential current waveform per IEC61000-4-5 Annex A. This rating reflects the maximum non-repetitive energy the device can absorb without failure, with clamping voltage measured at 245.7 V when subjected to 6.1 A peak pulse current. Derating applies above 25 °C ambient per Figure 4 in the datasheet.
Does JAN1N6172US/TR have polarity markings, and how is it mounted?
No, JAN1N6172US/TR has no polarity markings because it is a bidirectional TVS - both terminals are functionally identical and interchangeable. It is mounted in SQ-MELF surface-mount configuration with square-end-cap terminals aligned to standard EIA-481-B tape-and-reel pads. Placement requires no orientation check, and thermal management relies on soldering both end caps to adequately sized copper areas to maintain RθJEC = 5.0 °C/W.
What standards does JAN1N6172US/TR meet for ESD and surge immunity?
JAN1N6172US/TR provides ESD protection per IEC61000-4-2 (±8 kV contact, ±15 kV air), EFT immunity per IEC61000-4-4 (4 kV bursts), and lightning surge suppression per IEC61000-4-5 (2 kV line-to-line, 4 kV line-to-ground) - all verified in the device's characterization. These capabilities stem from its 1500 W PPP rating, low clamping voltage (245.7 V), and sub-nanosecond response time inherent to its avalanche diode structure.
JAN1N6172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 136.8V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 245.7V
- Current - Peak Pulse (10/1000µs):
- 6.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6172US/TR FAQ
1.How can I place an order for JAN1N6172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6172US/TR reliable?
The price and inventory of JAN1N6172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6172US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6172US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6172US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6172US/TR?
JAN1N6172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6172US/TR?
For technical support, including JAN1N6172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6172US/TR requirements.
6.How does Aetrix verify that JAN1N6172US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6172US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6172US/TR?
All JAN1N6172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6172US/TR part is unused and in its original packaging.
Return procedure for JAN1N6172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6172US/TR Tags
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