Microchip Technology JAN1N6173AUS/TR
- Part No.:
- JAN1N6173AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6173AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,794
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Product details
Overview
JAN1N6173AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 152 V working standoff voltage (VWM), 273 V clamping voltage (VC) at 5.5 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in aerospace power bus protection and avionics interface circuits.
For engineers reviewing the JAN1N6173AUS/TR datasheet, JAN1N6173AUS/TR pinout, JAN1N6173AUS/TR application, or JAN1N6173AUS/TR equivalent, this page delivers verified military-grade TVS parameters, package dimensions, clamping behavior under surge, thermal derating curves, and direct alternatives compliant with IEC61000-4-2/4-4/4-5 and MIL-STD-750.
Technical Context
The JAN1N6173AUS/TR uses hard-glass hermetic construction with internal Category 1 metallurgical bonds, enabling operation from −55 °C to +175 °C and radiation-hardened performance per MicroNote 050. Its bidirectional architecture provides symmetrical clamping without polarity marking.
It delivers 1500 W peak pulse power (10/1000 µs), with thermal resistance junction-to-end cap of 5.0 °C/W and linear derating above 150 °C end-cap temperature. Standby current is ≤5 µA at 152 V VWM, and breakdown occurs at minimum 190 V @ 5 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 152 V - maximum continuous reverse voltage before conduction; sets operating margin for 120–150 V DC power rails. |
| V(BR) min | 190 V @ 5 mA - guaranteed avalanche onset; ensures predictable turn-on above nominal system voltage. |
| VC @ IPP | 273 V @ 5.5 A - clamped voltage during 10/1000 µs surge; limits downstream stress to <275 V. |
| PPP | 1500 W - peak transient energy handling capacity; supports lightning-induced surges per IEC61000-4-5 Level 3. |
| ID @ VWM | ≤5 µA - ultra-low leakage at rated standoff; avoids parasitic loading in high-impedance sensing paths. |
| TJ/TSTG | −55 °C to +175 °C - extended military temperature range; validated for engine bay and space-qualified enclosures. |
| RθJEC | 5.0 °C/W - low thermal resistance to end cap; enables direct heatsinking via PCB copper pour or chassis contact. |
Pinout & Package
Package: SQ-MELF (C-package variant), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | Both ends function identically as symmetrical avalanche terminals; no orientation required during placement. |
| End caps | Thermal & electrical interface | Direct thermal conduction path to PCB or chassis; used for both current return and heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Prevents moisture ingress and long-term parameter drift in humid or vacuum environments (e.g., satellite payloads). |
| Category 1 metallurgical bonds | Ensures bond integrity under thermal cycling and mechanical shock - required for MIL-PRF-19500/516 JAN qualification. |
| Triple-layer passivation | Enhances surface insulation stability and reduces leakage current drift over lifetime in high-bias applications. |
| IEC61000-4-2/4-4/4-5 compliance | Validated ESD (±15 kV air), EFT (±2 kV), and surge (4 kV line-earth) immunity - eliminates need for external filtering stages. |
| Non-sensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling without pre-failure; simplifies assembly in uncontrolled electrostatic environments. |
Applications
| Aerospace Power Bus Protection | Avionics Interface Protection |
|---|---|
Use Scenario: Protecting 120–150 V DC distribution buses in UAV flight control systems against load dump and lightning-induced transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping device placed across bus rails to shunt surge energy before it reaches DC-DC converters and motor drivers. Use Value: Maintains bus voltage below 275 V during 1500 W surges, preventing latch-up or destruction of downstream SiC MOSFET gate drivers. |
Use Scenario: Shielding ARINC 429 data receivers from ESD coupling through shielded twisted-pair harnesses in cockpit display units. IC Role / Device Role / Timing Role: Low-leakage (<5 µA) standoff protector on differential signal lines, activated only during >190 V transients. Use Value: Preserves signal integrity at 100 kbps while surviving ±15 kV contact ESD per IEC61000-4-2 without signal interruption. |
| Military Vehicle Electronics | Satellite Power Conditioning |
Use Scenario: Guarding 28 V auxiliary power inputs in armored vehicle communication radios exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: High-reliability TVS mounted directly at connector entry point to intercept fast-rising transients before PCB routing. Use Value: Withstands 10/1000 µs surges up to 1500 W without degradation - critical for mission-critical comms uptime. |
Use Scenario: Safeguarding MPPT controller inputs in LEO solar array regulators subjected to deep-space radiation and thermal cycling. IC Role / Device Role / Timing Role: Radiation-hardened (per MicroNote 050), hermetically sealed TVS providing stable VWM over 15+ year orbital life. Use Value: Eliminates need for redundant protection schemes due to proven parametric stability under total ionizing dose (TID). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6173AUS (commercial grade) | No JAN reliability screening; same VWM, VC, and PPP specs but not MIL-PRF-19500/516 qualified. | Limited to non-mission-critical industrial or test equipment where radiation hardness and extended temp validation are unnecessary. | Select when cost sensitivity outweighs qualification requirements and full lifecycle traceability is not mandated. |
| JANTXV1N6173AUS | Higher reliability screening (JANTXV level), tighter parametric lot testing, and extended burn-in vs. JAN level. | Required for Class H/V space programs and DoD platforms demanding zero latent defects and full DSCC traceability. | Choose when system-level FMEA mandates enhanced defect elimination beyond JAN baseline, especially for launch-critical subsystems. |
Compared with JAN1N6173AUS/TR, the commercial 1N6173AUS offers identical electrical performance at lower cost but lacks military qualification evidence, while JANTXV1N6173AUS adds screening rigor for ultra-high-assurance deployments - enabling tiered selection based on program assurance level, not just clamping specs.
Availability
JAN1N6173AUS/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics interface protection, and military vehicle electronics requiring stable component supply with full DSCC traceability and MIL-PRF-19500/516 compliance.
Supply support for JAN1N6173AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JAN1N6173AUS/TR belongs to Microsemi's legacy military TVS family engineered specifically for survivability in extreme environments - including sustained high-temperature operation, mechanical shock, and ionizing radiation exposure.
FAQ
What is the clamping voltage of JAN1N6173AUS/TR and how is it measured?
The clamping voltage (VC) of JAN1N6173AUS/TR is 273 V, measured at 5.5 A peak pulse current (IPP) using a standardized 10/1000 µs double-exponential surge waveform. This value reflects the maximum voltage seen across the device during a defined transient event and is confirmed in the Electrical Characteristics table on page 3 of the T4-LDS-0278-1 datasheet. The JAN1N6173AUS/TR maintains this clamping performance across its full operating temperature range.
Is JAN1N6173AUS/TR RoHS compliant?
No, JAN1N6173AUS/TR is not RoHS compliant. Per the datasheet nomenclature and packaging section, RoHS-compliant matte-tin plating is available only on commercial-grade versions (e.g., 1N6173AUS without JAN prefix). The JAN1N6173AUS/TR uses standard tin/lead plating to meet MIL-PRF-19500/516 process and reliability requirements.
What does the "A" suffix in JAN1N6173AUS/TR indicate?
The "A" suffix in JAN1N6173AUS/TR denotes standard voltage tolerance: minimum breakdown voltage (V(BR)) is 190 V, clamping voltage (VC) is 273 V, and peak pulse current (IPP) is 5.5 A. Non-A versions have 5% higher VC, 5% lower minimum V(BR), and 5% lower IPP - making the "A" version the tighter, more predictable variant for precision protection design.
Can JAN1N6173AUS/TR be used in place of axial-leaded 1N6173 parts?
No - JAN1N6173AUS/TR is a surface-mount SQ-MELF (C-package) device, while axial-leaded 1N6173 variants use through-hole TO-204AA (DO-4) packaging. They share identical electrical specifications but differ in mechanical form, thermal path, and PCB assembly method. Substitution requires layout redesign and revalidation of thermal and surge-current paths.
What is the maximum steady-state power dissipation for JAN1N6173AUS/TR at 25 °C ambient?
The maximum steady-state power dissipation for JAN1N6173AUS/TR is 3.0 W at TA = 25 °C, as specified in the Maximum Ratings table. This rating assumes controlled thermal resistance from mounting point to ambient; derating begins linearly above 25 °C per Figure 4, reaching zero at 150 °C ambient. For reliable operation, ensure adequate copper area or heatsinking per the pad layout on page 7.
JAN1N6173AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 152V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 273V
- Current - Peak Pulse (10/1000µs):
- 5.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6173AUS/TR FAQ
1.How can I place an order for JAN1N6173AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6173AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6173AUS/TR reliable?
The price and inventory of JAN1N6173AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6173AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6173AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6173AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6173AUS/TR?
JAN1N6173AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6173AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6173AUS/TR?
For technical support, including JAN1N6173AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6173AUS/TR requirements.
6.How does Aetrix verify that JAN1N6173AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6173AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6173AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6173AUS/TR?
All JAN1N6173AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6173AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6173AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6173AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6173AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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