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Microchip Technology JAN1N6476US/TR
- Part No.:
- JAN1N6476US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6476US/TR.pdf
- Description:
- UNI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,594
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Product details
Overview
JAN1N6476US/TR from Microsemi is a military-qualified, voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode in G-MELF (D-5C) package, rated for 1500 W peak pulse power at 10/1000 µs, with 51.6 V working peak standoff voltage (VWM), 78.5 V maximum clamping voltage (VC) at 107 A peak pulse current, and -55 °C to +175 °C operating temperature range-used for secondary lightning protection and ESD/EFT hardening in avionics power rails.
For engineers reviewing the JAN1N6476US/TR datasheet, JAN1N6476US/TR pinout, JAN1N6476US/TR application, or JAN1N6476US/TR equivalent, key selection criteria include its MIL-PRF-19500/552 qualification, Category I metallurgical bond, hermetic glass construction, 51.6 V VWM, and 1500 W surge rating under standardized 10/1000 µs waveform conditions.
Technical Context
This unidirectional TVS operates as a clamping device triggered above its 54.0 V minimum breakdown voltage (VBR), with leakage current ≤5 µA at 51.6 V and thermal resistance of 20.0 °C/W from junction to end cap. It sustains 130 A forward surge current (8.33 ms half-sine) and exhibits a positive temperature coefficient of VBR (+0.103 %/°C).
Designed for high-reliability surface-mount deployment, it uses tungsten slugs and copper end caps with Sn/Pb finish, conforms to EIA-481-B tape-and-reel packaging, and delivers IEC61000-4-2/4-4/4-5 compliance without external biasing-leveraging hard-glass hermeticity to eliminate voids and ensure long-term stability under thermal cycling and radiation exposure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51.6 V DC maximum working peak voltage-defines max continuous reverse-biased voltage before clamping onset. |
| VBR (min) | 54.0 V at 1 mA-minimum voltage at which device enters avalanche breakdown, ensuring precise overvoltage threshold. |
| VC @ IPP | 78.5 V at 107 A (10/1000 µs)-clamped voltage during worst-case surge, limiting downstream circuit stress. |
| PPP | 1500 W at 25 °C (10/1000 µs)-peak transient energy absorption capability without failure. |
| IPP | 107 A peak pulse current (10/1000 µs)-surge current level at which VC is guaranteed. |
| TJ Range | -55 °C to +175 °C-enables operation in extreme environments including aerospace and downhole systems. |
| Temp Coeff | +0.103 %/°C-predictable VBR drift with temperature, critical for precision clamp margining. |
Pinout & Package
Package: G-MELF (also designated D-5C), hermetically sealed voidless hard-glass body with tungsten slugs and copper end caps finished with Sn/Pb. Cathode identified by band marking. Surface-mount cylindrical package with square-end-cap terminals for solder-reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line; conducts during forward surge events up to 130 A (8.33 ms). |
| Cathode | Avalanche clamping terminal | Marked with band; connected to higher-potential rail; initiates clamping when reverse voltage exceeds VWM. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk and moisture ingress, enabling >20-year field life in sealed avionics enclosures. |
| Category I metallurgical bond | Internal tungsten-copper interface qualified per MIL-PRF-19500 for zero-failure reliability in mission-critical systems. |
| MIL-PRF-19500/552 qualification | JAN-level screening ensures full compliance with military surge, vibration, thermal shock, and burn-in requirements. |
| Triple-layer passivation | Enhances surface insulation integrity and prevents leakage path formation under high-humidity or contamination exposure. |
| IEC61000-4-5 secondary lightning protection | Validated clamping performance at select levels supports system-level immunity certification without additional cascaded stages. |
Applications
| Aerospace Power Distribution | Defense Radar Front-End |
|---|---|
Use Scenario: Protection of 28 V DC aircraft bus inputs against load dump and lightning-induced surges per DO-160 Section 22. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly across input terminals to limit transients to <78.5 V. Use Value: Prevents damage to upstream DC-DC converters and downstream FPGAs by absorbing 1500 W surges while maintaining 51.6 V nominal rail integrity. | Use Scenario: Shielding RF receiver LNA bias lines from ESD events during field maintenance or antenna coupling. IC Role / Device Role / Timing Role: Standoff-clamp TVS on +12 V bias rail, leveraging low leakage (<5 µA) to avoid DC loading. Use Value: Enables IEC61000-4-2 Level 4 (8 kV contact) compliance without degrading noise figure or bias stability. |
| Downhole Oilfield Instrumentation | Satellite Power Management Unit |
Use Scenario: Safeguarding sensor signal conditioning circuits exposed to high-temperature (>150 °C) and high-voltage transients in drilling tools. IC Role / Device Role / Timing Role: Primary overvoltage protector on analog front-end supply, operating continuously at +175 °C ambient. Use Value: Maintains clamping integrity across full temperature range due to +0.103 %/°C VBR coefficient and hermetic reliability. | Use Scenario: Protecting solar array regulator inputs from electrostatic discharge during launch and orbital charging events. IC Role / Device Role / Timing Role: Radiation-hardened TVS (per MicroNote 050) placed at power entry point of PMU board. Use Value: Provides inherent TID tolerance and single-event burnout immunity without derating, supporting 15-year mission life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ51A | Surface-mount SMC package; 51 V VWM; 1500 W PPP; but plastic encapsulation, not hermetic. | Lacks MIL-PRF-19500/552 qualification and Category I bond; unsuitable for flight-critical hardware. | Select only for commercial-grade industrial controls where cost and volume outweigh hermeticity needs. |
| JANTXV1N6476 | Same electrical specs and hermetic G-MELF package; differs only in JANTXV-level screening (enhanced burn-in, parametric limits). | Identical application scope but required for programs mandating JANTXV-level traceability and test documentation. | Choose JANTXV1N6476 when full JANTXV certification-not just JAN-is contractually required. |
Compared with SMCJ51A and JANTXV1N6476, JAN1N6476US/TR uniquely balances JAN-level military qualification, hermetic reliability, and standard tape-and-reel delivery-making it optimal for production avionics where screening depth and supply-chain traceability must coexist without premium JANTXV cost.
Availability
JAN1N6476US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, defense radar front-end protection, and downhole instrumentation requiring stable component supply with full MIL-PRF-19500 traceability and hermetic reliability.
Supply support for JAN1N6476US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JAN1N6476US/TR belongs to Microsemi's legacy military-qualified TVS diode family, engineered specifically for hermetic, high-surge, high-temperature transient suppression in safety-critical systems where failure is not an option.
FAQ
What is the clamping voltage of JAN1N6476US/TR at its rated peak pulse current?
JAN1N6476US/TR has a maximum clamping voltage (VC) of 78.5 V when subjected to its rated 107 A peak pulse current under the 10/1000 µs waveform condition. This value is guaranteed across the full -55 °C to +175 °C operating temperature range and reflects worst-case device behavior during standardized surge testing per MIL-PRF-19500/552.
Is JAN1N6476US/TR compatible with lead-free reflow soldering processes?
JAN1N6476US/TR supports standard reflow profiles with a maximum solder temperature of 260 °C for 10 seconds, as specified in its mechanical data. Its Sn/Pb-finished copper end caps are compatible with both tin-lead and lead-free assembly, though process validation per J-STD-020 is recommended due to its hermetic glass construction and thermal mass.
Does JAN1N6476US/TR meet IEC61000-4-5 for lightning surge immunity?
JAN1N6476US/TR is validated for secondary lightning protection per select levels of IEC61000-4-5, as stated in Microsemi's official documentation. Its 1500 W peak pulse power rating and 78.5 V clamping voltage enable system-level compliance when applied with appropriate PCB layout and coordination with upstream protection stages.
What does the "TR" suffix indicate in JAN1N6476US/TR?
The "TR" suffix in JAN1N6476US/TR denotes tape-and-reel packaging per EIA-481-B standard, specifying carrier tape configuration, reel size, and component orientation for automated SMT placement. It does not alter electrical or reliability specifications-JAN1N6476US/TR shares identical ratings and qualification with JAN1N6476US in bulk or ammo-pack formats.
How does the temperature coefficient affect the breakdown voltage of JAN1N6476US/TR?
JAN1N6476US/TR exhibits a +0.103 %/°C temperature coefficient for its breakdown voltage (VBR), meaning VBR increases linearly with junction temperature. At +125 °C, VBR rises approximately 7.7 V above its 25 °C value (54.0 V), reaching ~61.7 V-critical for designing margin into clamping thresholds in high-temperature deployments.
JAN1N6476US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51.6V
- Voltage - Breakdown (Min):
- 54V
- Voltage - Clamping (Max) @ Ipp:
- 78.5V
- Current - Peak Pulse (10/1000µs):
- 19A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TA)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5C
JAN1N6476US/TR FAQ
1.How can I place an order for JAN1N6476US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6476US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6476US/TR reliable?
The price and inventory of JAN1N6476US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6476US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6476US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6476US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6476US/TR?
JAN1N6476US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6476US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6476US/TR?
For technical support, including JAN1N6476US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6476US/TR requirements.
6.How does Aetrix verify that JAN1N6476US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6476US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6476US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6476US/TR?
All JAN1N6476US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6476US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6476US/TR part is unused and in its original packaging.
Return procedure for JAN1N6476US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6476US/TR Tags
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Diodes Incorporated
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