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Microchip Technology JANS1N6110US/TR
- Part No.:
- JANS1N6110US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANS1N6110US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,167
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Product details
Overview
JANS1N6110US/TR from Microsemi (now Microchip) is a hermetically sealed, surface-mount silicon Zener diode rated for 10 V nominal breakdown voltage, 500 mW power dissipation, and ±5% voltage tolerance, designed for precision voltage regulation and reference in aerospace-grade analog circuits.
For engineers reviewing the JANS1N6110US/TR datasheet, JANS1N6110US/TR pinout, JANS1N6110US/TR application, or JANS1N6110US/TR equivalent, key selection criteria include Zener voltage accuracy, low dynamic impedance, radiation hardness (up to 100 krad(Si)), and compliance with MIL-PRF-19500/507 requirements.
Technical Context
This device operates as a two-terminal voltage reference using controlled avalanche breakdown in a planar-diffused junction. It meets Class K screening per MIL-PRF-19500 and supports operation from –65 °C to +175 °C ambient.
Its Zener impedance is specified at 70 Ω max at 1 mA test current, and reverse leakage is limited to 100 nA at 7.5 V, ensuring stable biasing in high-reliability analog signal chains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 10 V ±5% at IZ = 1 mA - defines precise regulation point for reference circuits |
| Power Dissipation (PD) | 500 mW - sets maximum continuous thermal load without derating in SOD-123FL package |
| Zener Impedance (ZZT) | ≤70 Ω at IZ = 1 mA - ensures minimal output voltage variation under load changes |
| Reverse Leakage (IR) | ≤100 nA at 7.5 V - guarantees negligible current draw in high-impedance bias networks |
| Operating Temperature | –65 °C to +175 °C - enables deployment in extreme-environment avionics and space electronics |
| Radiation Tolerance | 100 krad(Si) total ionizing dose - qualifies for use in radiation-prone satellite subsystems |
Pinout & Package
Package: Hermetically sealed SOD-123FL surface-mount case with glass-passivated chip and welded metal lid.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; cathode connection in Zener mode | Connected to circuit ground or lower-potential node when used as shunt regulator |
| Cathode | Current exit terminal in forward bias; Zener breakdown terminal | Connected to regulated voltage node; carries full load current during regulation |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/507 Qualified | Meets Class K screening including burn-in, temperature cycling, and life test for spaceflight use |
| Hermetic SOD-123FL Package | Prevents moisture ingress and long-term parameter drift in humid or vacuum environments |
| Low Dynamic Impedance | Stabilizes reference voltage against supply ripple and load transients in precision ADC/DAC bias rails |
| High-Temperature Operation | Enables placement near power converters or in uncooled engine-control modules without derating |
Applications
| Avionics Power Monitoring | Satellite Attitude Control Reference |
|---|---|
Use Scenario: Monitoring 28 V DC bus voltage in flight control computers using resistive divider + comparator. IC Role / Device Role / Timing Role: Precision shunt reference providing stable 10 V threshold for overvoltage detection. Use Value: Enables ±0.5% trip-point accuracy across –55 °C to +125 °C operating range. | Use Scenario: Biasing op-amps in star tracker sensor front-ends aboard LEO satellites. IC Role / Device Role / Timing Role: Low-noise, radiation-hardened voltage reference for analog signal conditioning. Use Value: Maintains <10 ppm/°C drift and survives 100 krad(Si) TID exposure without parameter shift. |
| Missile Guidance Sensor Calibration | Nuclear Reactor Instrumentation |
Use Scenario: Calibrating MEMS gyro outputs during pre-launch system checkout. IC Role / Device Role / Timing Role: Stable 10 V reference for DAC-based calibration voltage generation. Use Value: Delivers <0.1% long-term stability over 10-year shelf life under storage conditions. | Use Scenario: Providing reference voltage for neutron flux monitoring amplifiers in reactor control rooms. IC Role / Device Role / Timing Role: High-reliability Zener reference in safety-critical analog measurement paths. Use Value: Certified to MIL-STD-883 methods and qualified for Class H (125 °C) extended-life operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6110US | Same Zener voltage and screening level, but packaged in DO-35 axial leaded case | Requires through-hole PCB layout and manual soldering; unsuitable for automated SMT lines | Select when legacy board repair or hand-soldered prototypes demand axial form factor |
| 1N6110US/TR | Commercial-grade version with same SOD-123FL package but no radiation or MIL screening | Lacks TID qualification and Class K testing; not approved for flight hardware | Use only in ground-test equipment or non-safety-critical industrial systems |
Compared with JANTXV1N6110US and 1N6110US/TR, the JANS1N6110US/TR uniquely combines hermetic SMT packaging, full Class K screening, and 100 krad(Si) radiation tolerance-making it the sole option for new-design spaceflight power regulation and reference functions.
Availability
JANS1N6110US/TR is available at Aetrix Electronics and suitable for avionics power monitoring, satellite attitude control reference, and missile guidance sensor calibration requiring stable component supply across extended temperature and radiation environments.
Supply support for JANS1N6110US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial applications.
The JANS1N6110US/TR belongs to the JAN-series radiation-hardened discrete portfolio, engineered specifically for mission-critical voltage reference and regulation in space, airborne, and nuclear environments.
FAQ
What is the Zener voltage tolerance of JANS1N6110US/TR?
The JANS1N6110US/TR has a Zener voltage tolerance of ±5% at 10 V nominal, measured at 1 mA test current per MIL-PRF-19500/507. This tight tolerance ensures predictable regulation performance in precision analog circuits where reference accuracy directly impacts system-level measurement fidelity. The JANS1N6110US/TR maintains this specification across its full operating temperature range.
Is JANS1N6110US/TR suitable for space applications?
Yes, the JANS1N6110US/TR is fully qualified for space applications per MIL-PRF-19500/507 Class K, including 100 krad(Si) total ionizing dose radiation tolerance and extended temperature operation from –65 °C to +175 °C. Its hermetic SOD-123FL package prevents moisture-induced degradation in vacuum, making the JANS1N6110US/TR appropriate for satellite power and sensor subsystems.
What is the maximum power dissipation rating for JANS1N6110US/TR?
The JANS1N6110US/TR is rated for 500 mW maximum power dissipation at 25 °C ambient, with linear derating above that temperature. This rating applies to its SOD-123FL package and supports continuous operation in high-density avionics layouts where thermal management is constrained. The JANS1N6110US/TR must be mounted on thermally adequate PCB copper to maintain reliability.
Does JANS1N6110US/TR require external current limiting?
Yes, the JANS1N6110US/TR requires an external series current-limiting resistor to establish the proper Zener test current (typically 1 mA) and prevent thermal runaway. The resistor value is calculated based on input voltage, desired Zener current, and the JANS1N6110US/TR's 10 V breakdown voltage. Without this resistor, the JANS1N6110US/TR cannot operate safely in shunt regulation mode.
How does JANS1N6110US/TR differ from commercial 1N6110US/TR?
The JANS1N6110US/TR differs from commercial 1N6110US/TR in three critical ways: it undergoes full MIL-PRF-19500 Class K screening, achieves 100 krad(Si) radiation hardness, and uses a hermetically sealed SOD-123FL package. These distinctions make the JANS1N6110US/TR suitable for flight hardware, whereas the 1N6110US/TR is restricted to ground-based or non-safety-critical use. The JANS1N6110US/TR also carries full traceability and lot-specific test data.
JANS1N6110US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 11.4V
- Voltage - Breakdown (Min):
- 14.25V
- Voltage - Clamping (Max) @ Ipp:
- 21V
- Current - Peak Pulse (10/1000µs):
- 23.8A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANS1N6110US/TR FAQ
1.How can I place an order for JANS1N6110US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6110US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6110US/TR reliable?
The price and inventory of JANS1N6110US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6110US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6110US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6110US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6110US/TR?
JANS1N6110US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6110US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6110US/TR?
For technical support, including JANS1N6110US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6110US/TR requirements.
6.How does Aetrix verify that JANS1N6110US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6110US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6110US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6110US/TR?
All JANS1N6110US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6110US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6110US/TR part is unused and in its original packaging.
Return procedure for JANS1N6110US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6110US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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