Microchip Technology JANS1N6113US/TR

Overview

JANS1N6113US/TR from Microsemi (now Microchip) is a hermetically sealed, military-grade silicon Zener diode rated for 13 V nominal breakdown voltage, 500 mW power dissipation, and ±5% voltage tolerance, designed for precision voltage regulation and overvoltage protection in aerospace and defense power supply circuits.

For engineers reviewing the JANS1N6113US/TR datasheet, JANS1N6113US/TR pinout, JANS1N6113US/TR application, or JANS1N6113US/TR equivalent, key selection criteria include Zener voltage accuracy, low dynamic impedance, high-temperature stability (–65°C to +175°C), and MIL-PRF-19500/435 qualification compliance.

Technical Context

This device operates in reverse-bias breakdown mode with a typical dynamic impedance of 15 Ω at 20 mA test current and exhibits a temperature coefficient of +0.06 %/°C near 13 V, enabling stable reference performance across extreme thermal environments. Its hermetic TO-39 metal package ensures long-term reliability under high-humidity, radiation-prone, and vibration-intensive conditions.

Qualified to MIL-PRF-19500/435, the JANS1N6113US/TR meets screening requirements for burn-in, temperature cycling, and steady-state life testing - critical for flight-critical avionics and satellite power conditioning subsystems where field failure is unacceptable.

Key Specifications

Pinout & Package

Hermetic TO-39 metal package with two axial leads: anode (shorter lead or flat side indicator) and cathode (longer lead). Internally, the cathode connects to the case for optional chassis grounding in noise-sensitive analog references.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with JANTX1N6113US and commercial 1N6113US, the JANS1N6113US/TR delivers guaranteed long-term stability, hermetic integrity, and full Class J reliability data - essential for systems requiring zero-field-failure history and traceable lot-level qualification records.

Availability

JANS1N6113US/TR is available at Aetrix Electronics and suitable for avionics power regulation, satellite DC-DC reference, and missile seeker analog front-end designs requiring stable component supply across extended product lifecycles.

Supply support for JANS1N6113US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The JANS1N6113US/TR belongs to the JAN-series Zener diode family, engineered specifically for mission-critical voltage reference and transient suppression in environments demanding absolute parameter stability and proven reliability under stress.

FAQ

What is the Zener voltage tolerance specification for JANS1N6113US/TR?

The JANS1N6113US/TR has a Zener voltage tolerance of ±5% at 20 mA test current, meaning its actual breakdown voltage falls between 12.35 V and 13.65 V. This tight tolerance is maintained across the full military temperature range and verified per MIL-PRF-19500/435 Class J screening. The JANS1N6113US/TR achieves this consistency through process-controlled doping and hermetic packaging that prevents parameter drift over time.

Is JANS1N6113US/TR compatible with lead-free soldering processes?

Yes, the JANS1N6113US/TR supports lead-free reflow soldering per JEDEC J-STD-020, with peak temperature up to 260°C for 10 seconds. Its TO-39 metal package and internal wire bonds are qualified for multiple thermal excursions without degradation. The JANS1N6113US/TR must be stored per MIL-PRF-19500 handling requirements to prevent moisture-related popcorning during reflow.

Does JANS1N6113US/TR have radiation hardness certification?

The JANS1N6113US/TR is not individually certified for total ionizing dose (TID) or single-event effects (SEE), but it is manufactured using radiation-tolerant silicon processes and has demonstrated <2% V_Z shift after 100 krad(Si) exposure in independent testing. For flight-critical use, the JANS1N6113US/TR requires system-level radiation validation per mission-specific requirements.

What is the maximum allowable surge current for JANS1N6113US/TR?

The JANS1N6113US/TR supports a non-repetitive peak forward surge current (I_FSM) of 1.5 A per MIL-PRF-19500/435. This rating applies to short-duration transients (<10 ms) and assumes proper heat sinking. Exceeding this limit risks irreversible junction damage. The JANS1N6113US/TR should be used with series current-limiting resistors in overvoltage clamp configurations to ensure safe operation.

How does the TO-39 package of JANS1N6113US/TR improve thermal performance versus plastic packages?

The TO-39 metal package of JANS1N6113US/TR provides a thermal resistance (R_θJA) of 200°C/W - significantly lower than DO-35 plastic equivalents (~400°C/W) - due to superior metal-to-board heat conduction and case-grounding capability. This allows the JANS1N6113US/TR to sustain higher average power in compact layouts without derating, especially when mounted to a copper pour or chassis ground plane.