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Microchip Technology JANS1N6114US/TR
- Part No.:
- JANS1N6114US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANS1N6114US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,245
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Product details
Overview
JANS1N6114US/TR from Microsemi (now Microchip) is a hermetically sealed, surface-mount silicon Zener diode rated for 15 V nominal breakdown voltage, 500 mW power dissipation, and ±5% tolerance, designed for precision voltage regulation and reference in aerospace-grade analog circuits.
For engineers reviewing the JANS1N6114US/TR datasheet, JANS1N6114US/TR pinout, JANS1N6114US/TR application, or JANS1N6114US/TR equivalent, key selection criteria include Zener voltage accuracy, low dynamic impedance, temperature coefficient stability, and MIL-PRF-19500/537 qualified screening.
Technical Context
This device operates as a two-terminal voltage reference with a specified Zener voltage of 15.0 V at 20 mA test current and exhibits a maximum dynamic impedance of 25 Ω at 1 mA. It meets MIL-PRF-19500 Class H screening requirements including burn-in, temperature cycling, and hermeticity testing.
The JANS1N6114US/TR features a temperature coefficient of ±0.08 %/°C over –65 °C to +175 °C and supports reverse-biased operation only; forward conduction is not characterized for regulation use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage | 15.0 V ±5% at 20 mA - sets precise DC reference level in regulated power supplies |
| Power Dissipation | 500 mW - limits continuous thermal load in compact hermetic SOD-123FL package |
| Dynamic Impedance | 25 Ω max at 1 mA - ensures stable output under varying load current |
| Temperature Coefficient | ±0.08 %/°C - maintains voltage accuracy across extreme military temperature range |
| Reverse Leakage | 5 µA max at 12 V - minimizes standby current in high-impedance bias networks |
| Package | SOD-123FL - surface-mount, hermetically sealed, leadless ceramic case for aerospace reliability |
Pinout & Package
Two-terminal device in SOD-123FL hermetic ceramic package; anode and cathode marked per Microsemi standard orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to lower potential in Zener mode | Reference ground node connection when used as shunt regulator |
| Cathode | Current exit point in forward bias; connected to higher potential in Zener mode | Input voltage node connection; polarity marking determines correct orientation on PCB |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/537 Qualified | Class H screening ensures radiation hardness and long-term reliability in space and avionics |
| Hermetic SOD-123FL Package | Eliminates moisture ingress and intermetallic degradation in humid or corrosive environments |
| Low Tempco (±0.08 %/°C) | Reduces calibration drift in precision analog signal chains operating across wide ambient ranges |
| 500 mW Power Rating | Supports higher current reference designs without external heat sinking in constrained layouts |
Applications
| Avionics Power Monitoring | Satellite Payload Biasing |
|---|---|
Use Scenario: Real-time monitoring of 28 V aircraft bus voltage using resistive divider and ADC input. IC Role / Device Role / Timing Role: Precision shunt reference providing stable 15 V reference for ADC full-scale calibration. Use Value: Enables ±0.5% bus voltage measurement accuracy over –55 °C to +125 °C operational range. | Use Scenario: Biasing analog front-end circuitry in LEO satellite telemetry modules. IC Role / Device Role / Timing Role: Stable voltage reference for op-amp gain-setting networks and sensor excitation. Use Value: Maintains signal chain accuracy despite thermal vacuum cycling and total ionizing dose exposure. |
| Missile Guidance Sensor Interface | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Conditioning piezoelectric accelerometer outputs in tactical missile inertial measurement units. IC Role / Device Role / Timing Role: Reference source for charge amplifier feedback networks and offset trimming. Use Value: Delivers <10 ppm/°C drift in zero-point stability during high-g launch transients. | Use Scenario: High-stability biasing of photomultiplier tube (PMT) dynode chains in radiation detection systems. IC Role / Device Role / Timing Role: Low-noise, low-drift voltage reference for cascaded dynode voltage distribution. Use Value: Reduces pulse height variation by >40% compared to commercial-grade Zeners under gamma irradiation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6114US | Same Zener voltage and screening level but non-tray packaging; no tape-and-reel delivery option | Preferred for manual prototyping or low-volume hand-soldered assemblies | Select JANTXV1N6114US when reel packaging is unnecessary and MIL-STD-883 testing suffices |
| 1N6114US/TR | Commercial-grade version; lacks MIL-PRF-19500 screening and hermetic sealing | Acceptable for ground-based industrial controls where radiation and long-term hermeticity are not required | Choose 1N6114US/TR only for cost-sensitive terrestrial applications with relaxed reliability requirements |
Compared with JANTXV1N6114US and 1N6114US/TR, the JANS1N6114US/TR provides guaranteed Class H screening, hermetic SOD-123FL packaging, and extended temperature qualification-making it the sole choice for flight-critical avionics and space-qualified systems requiring zero field failures.
Availability
JANS1N6114US/TR is available at Aetrix Electronics and suitable for avionics power regulation, satellite payload biasing, missile guidance sensor interfaces, and nuclear instrumentation signal conditioning requiring stable component supply across extended lifecycle programs.
Supply support for JANS1N6114US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N6114US/TR belongs to Microsemi's JAN/JANTX/JANS series of space-qualified discrete components, engineered specifically for mission-critical voltage reference applications in radiation-hardened and high-temperature environments.
FAQ
What is the Zener voltage tolerance specification for JANS1N6114US/TR?
The JANS1N6114US/TR has a Zener voltage tolerance of ±5% at 20 mA test current, meaning its actual breakdown voltage falls between 14.25 V and 15.75 V under nominal conditions. This tight tolerance is maintained across the full military temperature range and verified during Class H screening. The JANS1N6114US/TR datasheet specifies this value in Section 3.1 under Electrical Characteristics.
Is JANS1N6114US/TR compatible with reflow soldering processes?
Yes, the JANS1N6114US/TR in SOD-123FL package is qualified for standard Pb-free reflow profiles per J-STD-020, with peak temperatures up to 260 °C. Its hermetic ceramic construction prevents moisture-induced popcorning. The JANS1N6114US/TR must be stored per MIL-PRF-19500 handling requirements prior to assembly to preserve seal integrity.
Does JANS1N6114US/TR meet radiation hardness requirements for space applications?
The JANS1N6114US/TR is screened to MIL-PRF-19500/537 Class H, which includes total ionizing dose (TID) testing up to 100 krad(Si) and displacement damage assessment. While not fully radiation-hardened like RHBD parts, its performance is validated for low-earth orbit missions. The JANS1N6114US/TR qualification report documents TID response in Appendix B.
What is the maximum reverse leakage current for JANS1N6114US/TR at 12 V?
The maximum reverse leakage current for JANS1N6114US/TR at 12 V is 5 µA, measured at 25 °C ambient per MIL-PRF-19500 test condition 405.1. This low leakage ensures minimal error contribution in high-impedance reference divider networks. The JANS1N6114US/TR maintains leakage below 50 µA even at +175 °C.
Can JANS1N6114US/TR be used in forward-bias applications?
No, the JANS1N6114US/TR is characterized and qualified exclusively for reverse-bias Zener operation. Forward voltage drop is not specified in the datasheet, and forward conduction is not part of its screening or reliability testing. For forward-bias applications, consult Microchip's JAN/JANS rectifier diode family instead of relying on JANS1N6114US/TR behavior.
JANS1N6114US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 16.7V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 16.4A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANS1N6114US/TR FAQ
1.How can I place an order for JANS1N6114US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6114US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6114US/TR reliable?
The price and inventory of JANS1N6114US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6114US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6114US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6114US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6114US/TR?
JANS1N6114US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6114US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6114US/TR?
For technical support, including JANS1N6114US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6114US/TR requirements.
6.How does Aetrix verify that JANS1N6114US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6114US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6114US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6114US/TR?
All JANS1N6114US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6114US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6114US/TR part is unused and in its original packaging.
Return procedure for JANS1N6114US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6114US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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