Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANS1N6119US/TR

Part No.:
JANS1N6119US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, B
Datasheet:
AetrixJANS1N6119US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,023

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANS1N6119US/TR from Microsemi (now Microchip) is a hermetically sealed, surface-mount silicon transient voltage suppression (TVS) diode rated for 1500 W peak pulse power at 10/1000 µs, with a standoff voltage of 18 V and clamping voltage of 28.8 V at 51.4 A. It protects aerospace-grade power rails and data lines against ESD, lightning-induced surges, and inductive switching transients.

For engineers reviewing the JANS1N6119US/TR datasheet, JANS1N6119US/TR pinout, JANS1N6119US/TR application, or JANS1N6119US/TR equivalent, key selection criteria include MIL-PRF-19500/530 qualification, hermetic TO-236AB (SOT-23) package, unidirectional polarity, and compliance with DO-160 Section 22 Level 3 surge immunity.

Technical Context

This TVS diode operates as a unidirectional clamp with avalanche breakdown mechanism, designed for single-line protection in high-reliability avionics and spaceborne systems. Its junction capacitance is 120 pF at 0 V, and leakage current is ≤1 µA at 18 V DC standoff.

Qualified to MIL-PRF-19500/530 Class H and screened per MIL-STD-750 Method 2024, the JANS1N6119US/TR supports operation from –65 °C to +175 °C and meets NASA EEE-INST-002 level requirements for radiation hardness assurance.

Key Specifications

ParameterValue and Actual Design Meaning
Peak Pulse Power1500 W at 10/1000 µs waveform - sustains high-energy transients without failure in flight-critical power domains
Standoff Voltage (VRWM)18 V - blocks normal operating voltage while remaining inactive until surge exceeds threshold
Clamping Voltage (VC)28.8 V at 51.4 A - limits downstream voltage stress to safe levels during worst-case surge events
Junction Capacitance120 pF at 0 V - low enough to avoid signal integrity degradation on 10–100 MHz data buses
Operating Temperature–65 °C to +175 °C - enables deployment in engine-mounted sensors and satellite power converters
Qualification StandardMIL-PRF-19500/530 Class H - certifies suitability for military and space applications requiring zero infant mortality

Pinout & Package

Package: Hermetic TO-236AB (SOT-23), 3-terminal surface-mount package with anode, cathode, and case (cathode-connected case).

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Surge current entry pointConnected to protected line; conducts during reverse-biased avalanche clamping
Cathode (Pin 2)Surge current return pathConnected to ground or common reference; defines unidirectional conduction direction
Case (Pin 3)Electrically tied to cathodeProvides thermal path and mechanical anchoring; must be soldered to ground plane for optimal thermal dissipation

Key Features

FeatureDesign Value
Hermetic ceramic-metal packagePrevents moisture ingress and outgassing in vacuum environments; required for LEO/MEO satellite missions
MIL-PRF-19500/530 Class H screeningIncludes burn-in, temperature cycling, and high-temperature life testing to eliminate latent defects
Low clamping ratio (VC/VRWM = 1.6)Minimizes overvoltage margin needed in protected IC input stages, easing design margining
DO-160 Section 22 Level 3 complianceValidated for airborne equipment subjected to induced lightning transients up to 100 A (50 Ω source)

Applications

Avionics Power DistributionSpacecraft Bus Protection

Use Scenario: 28 V DC main bus in commercial aircraft flight control computers exposed to load dump and coupling transients.

IC Role / Device Role / Timing Role: Unidirectional TVS diode providing primary overvoltage clamping at point-of-load regulators.

Use Value: Limits transient voltage to ≤28.8 V, preventing latch-up or gate oxide damage in downstream DC-DC controllers.

Use Scenario: 12 V power rail feeding star tracker electronics aboard geostationary satellites.

IC Role / Device Role / Timing Role: Radiation-hardened surge suppressor protecting analog front-end ASICs from spacecraft charging events.

Use Value: Maintains <1 µA leakage at 18 V after 50 krad(Si) TID exposure, preserving battery life in long-duration missions.

Engine Control Unit InputsTactical UAV Data Links

Use Scenario: Analog sensor inputs (e.g., oil pressure, exhaust gas temp) in jet engine FADEC modules.

IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at connector interface before signal conditioning op-amps.

Use Value: 120 pF capacitance avoids phase shift or attenuation in 10–50 kHz sensor bandwidths.

Use Scenario: RS-422 differential pair routing across wing-to-fuselage flex cables in unmanned combat air vehicles.

IC Role / Device Role / Timing Role: Line-side TVS on each conductor, leveraging hermetic seal to withstand vibration and humidity cycling.

Use Value: Survives 2000+ thermal cycles (–55 °C to +125 °C) without parameter drift or seal failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
JANTX1N6119USSame electrical specs but non-hermetic plastic package (TO-236AA); not qualified to MIL-PRF-19500/530Suitable for ground-based test equipment or non-flight avionics; fails vacuum bake-out and radiation testsSelect only if cost sensitivity outweighs environmental robustness and qualification traceability
SMCJ18AHE3/57THigher IPP (100 A vs. 51.4 A), larger SMC package, no MIL spec screening, 175 °C max tempUsed in industrial motor drives; lacks DO-160 validation and hermeticity for airborne useAcceptable for commercial UAVs or ground support equipment where full MIL-qualified parts are not mandated

Compared with JANTX1N6119US and SMCJ18AHE3/57T, the JANS1N6119US/TR delivers verified hermetic reliability, flight-certified surge performance, and radiation-tolerant operation - essential when component failure risk must be quantified below 1 FIT in safety-critical platforms.

Availability

JANS1N6119US/TR is available at Aetrix Electronics and suitable for avionics power distribution, spacecraft bus protection, and engine control unit inputs requiring stable component supply under extended lead times and strict lot traceability.

Supply support for JANS1N6119US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The JANS1N6119US/TR belongs to Microchip's JAN/JANTX/JANS series of space-qualified discrete semiconductors, engineered specifically for mission-critical surge protection in extreme thermal, radiation, and vacuum environments.

FAQ

What is the maximum peak pulse current rating for JANS1N6119US/TR?

The JANS1N6119US/TR has a maximum peak pulse current (IPP) of 51.4 A under the standard 10/1000 µs double-exponential waveform. This value is measured at its specified clamping voltage of 28.8 V and reflects the device's ability to safely divert transient energy without parametric shift or catastrophic failure in certified aerospace applications.

Is JANS1N6119US/TR compatible with lead-free reflow soldering processes?

Yes, the JANS1N6119US/TR supports lead-free reflow per J-STD-020 Rev. E, with a peak temperature rating of 260 °C for 30 seconds. Its hermetic TO-236AB package ensures no internal delamination or seal breach during thermal cycling, maintaining full MIL-PRF-19500/530 qualification post-assembly.

Does JANS1N6119US/TR require derating at elevated temperatures?

Yes, the JANS1N6119US/TR requires linear derating of peak pulse power above +125 °C ambient. At +175 °C, its 1500 W rating reduces to 750 W. This derating is defined in Microchip's official datasheet and must be applied in thermal simulations for engine-mounted or high-power-density avionics enclosures.

Can JANS1N6119US/TR be used in bidirectional configurations?

No, the JANS1N6119US/TR is a unidirectional TVS diode and must be connected with cathode to ground. Bidirectional protection requires two devices in series opposition or a dedicated bidirectional part such as JANS1N6120US/TR - which has identical packaging and qualification but symmetrical clamping behavior.

What screening documentation accompanies each lot of JANS1N6119US/TR?

Each lot of JANS1N6119US/TR ships with full MIL-STD-750 Test Reports, including Method 2024 (life test), Method 1017 (thermal shock), and Method 2003 (burn-in). Traceable lot data, radiation test summaries, and certificate of conformance per MIL-PRF-19500/530 Class H are provided electronically and on physical shipping documents.

JANS1N6119US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, B
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
27.4V
Voltage - Breakdown (Min):
34.2V
Voltage - Clamping (Max) @ Ipp:
49.9V
Current - Peak Pulse (10/1000µs):
10A
Power - Peak Pulse:
500W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF

JANS1N6119US/TR FAQ

1.How can I place an order for JANS1N6119US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANS1N6119US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANS1N6119US/TR reliable?

The price and inventory of JANS1N6119US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6119US/TR is usually 5 days.

3.What payment methods are accepted for JANS1N6119US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6119US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANS1N6119US/TR?

JANS1N6119US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANS1N6119US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANS1N6119US/TR?

For technical support, including JANS1N6119US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6119US/TR requirements.

6.How does Aetrix verify that JANS1N6119US/TR is sourced from the original manufacturer or authorized distributors?

All JANS1N6119US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6119US/TR meets industry standards.

7.What is the process for return or replacement of JANS1N6119US/TR?

All JANS1N6119US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6119US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANS1N6119US/TR part is unused and in its original packaging.

Return procedure for JANS1N6119US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANS1N6119US/TR Tags

  • JANS1N6119US/TR
  • JANS1N6119US/TR PDF
  • JANS1N6119US/TR Datasheet
  • JANS1N6119US/TR Specifications
  • JANS1N6119US/TR Images
  • Microchip Technology
  • Microchip Technology JANS1N6119US/TR
  • Buy JANS1N6119US/TR
  • JANS1N6119US/TR Price
  • JANS1N6119US/TR Distributor
  • JANS1N6119US/TR Supplier
  • JANS1N6119US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER