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Microchip Technology JANS1N6129US/TR
- Part No.:
- JANS1N6129US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANS1N6129US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,000
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Product details
Overview
JANS1N6129US/TR from Microsemi (now Microchip) is a hermetically sealed, military-grade 200 V, 500 mW silicon Zener diode in a DO-35 glass axial package, with ±5% tolerance and 100 °C maximum junction temperature, used for precision voltage reference and overvoltage protection in aerospace power conditioning circuits.
For engineers reviewing the JANS1N6129US/TR datasheet, JANS1N6129US/TR pinout, JANS1N6129US/TR application, or JANS1N6129US/TR equivalent, key considerations include its MIL-PRF-19500/407 qualification, low dynamic impedance of 150 Ω at 1 mA, and guaranteed operation across –65 °C to +175 °C ambient.
Technical Context
This device operates as a two-terminal voltage reference diode, relying on controlled Zener breakdown in the reverse-biased region. Its electrical behavior is defined by nominal Zener voltage (200 V), test current (1 mA), and dynamic impedance (150 Ω), all specified under MIL-STD-750 test methods.
It meets screening requirements per MIL-PRF-19500/407 including burn-in, temperature cycling, and steady-state life testing. The DO-35 package provides hermetic sealing and lead-to-case insulation rated at 500 VDC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage | 200 V ±5% at 1 mA - sets precise clamping level for high-voltage regulation |
| Power Dissipation | 500 mW - limits continuous thermal load in compact axial layout |
| Dynamic Impedance | 150 Ω at 1 mA - determines output voltage stability under load variation |
| Operating Temp | –65 °C to +175 °C - enables deployment in extreme-environment avionics |
| Junction Temp | Max 100 °C - constrains PCB trace width and heatsinking in sealed enclosures |
| MIL Spec | MIL-PRF-19500/407 - certifies reliability for Class H (aerospace/space) applications |
Pinout & Package
Hermetically sealed DO-35 glass axial package with axial leads; cathode identified by band. No active pin configuration - two-terminal passive device.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side in reverse-bias protection configuration |
| Cathode | Zener breakdown terminal | Banded end; connected to higher-potential side to enable voltage clamping |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-35 package | Prevents moisture ingress and long-term parameter drift in vacuum or humid environments |
| MIL-PRF-19500/407 Class H | Validated for spaceflight and high-reliability airborne systems with zero defect screening |
| 100 °C max junction temp | Enables use with minimal thermal derating in thermally constrained satellite power modules |
| ±5% Zener tolerance | Supports tight voltage margining in regulated DC-DC converter feedback networks |
Applications
| Avionics Power Bus Protection | Satellite DC-DC Converter Reference |
|---|---|
Use Scenario: Clamping transient spikes on 28 V and 115 V AC-derived DC bus lines in flight control computers. IC Role / Device Role / Timing Role: Two-terminal passive voltage clamp protecting downstream regulators and FPGAs. Use Value: Prevents latch-up in radiation-hardened ASICs during lightning-induced surges per DO-160 Section 22. | Use Scenario: Providing stable 200 V reference for isolated error amplifiers in high-voltage DC-DC converters. IC Role / Device Role / Timing Role: Precision Zener reference in feedback divider network of push-pull topology. Use Value: Maintains ±0.5% output regulation across temperature when paired with matched resistors. |
| Spacecraft Battery Management | Tactical Radar Transmitter Bias |
Use Scenario: Overvoltage cutoff sensing in Li-ion battery packs for launch vehicle telemetry systems. IC Role / Device Role / Timing Role: Threshold detector in discrete comparator circuit monitoring cell stack voltage. Use Value: Triggers shutdown at 210 V with <10 µs response time due to low junction capacitance (2 pF). | Use Scenario: Bias voltage stabilization for TWT amplifier cathodes in ground-based radar transmitters. IC Role / Device Role / Timing Role: High-voltage reference source feeding series-pass regulator stage. Use Value: Reduces bias ripple to <50 mVpp, improving RF carrier purity and reducing phase noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6129US | Same Zener voltage and package; tighter ±2% tolerance; higher screening level (JANTXV vs JANS) | Required for Class K (space-qualified) programs where tighter voltage tolerance is mandated | Select JANTXV1N6129US when full JANTXV screening and 2% tolerance are contractually required |
| 1N6129US | Commercial version; same 200 V rating but no MIL screening; rated only to +150 °C ambient | Suitable for ground-test equipment or non-flight prototypes where cost and lead time outweigh reliability needs | Choose 1N6129US for lab validation or non-mission-critical subsystems with relaxed environmental specs |
Compared with JANS1N6129US/TR, JANTXV1N6129US offers enhanced tolerance and screening for mission-critical space hardware, while 1N6129US reduces cost and delivery time for development-stage or terrestrial applications without MIL-qualified operation.
Availability
JANS1N6129US/TR is available at Aetrix Electronics and suitable for avionics power conditioning, satellite DC-DC regulation, and spacecraft battery management requiring stable component supply across extended temperature and radiation environments.
Supply support for JANS1N6129US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N6129US/TR belongs to Microchip's legacy MIL-PRF-19500 qualified Zener diode family, engineered specifically for voltage reference and transient suppression in radiation-tolerant, high-temperature electronic systems.
FAQ
What is the Zener voltage tolerance for JANS1N6129US/TR?
The JANS1N6129US/TR has a Zener voltage tolerance of ±5% at 1 mA test current, as verified per MIL-PRF-19500/407 screening. This tolerance ensures predictable clamping performance in aerospace power rails where voltage margins are tightly controlled. The JANS1N6129US/TR maintains this specification across its full operating temperature range from –65 °C to +175 °C ambient.
Is JANS1N6129US/TR suitable for space applications?
Yes, JANS1N6129US/TR is qualified to MIL-PRF-19500/407 Class H, which covers high-reliability applications including spaceflight. It undergoes rigorous screening including burn-in, temperature cycling, and steady-state life testing. The JANS1N6129US/TR is routinely used in satellite power systems where hermeticity and extended temperature operation are mandatory.
What is the maximum power dissipation of JANS1N6129US/TR?
The JANS1N6129US/TR is rated for 500 mW maximum power dissipation at 25 °C ambient, with linear derating above that temperature. Its DO-35 package allows efficient heat transfer through axial leads, supporting reliable operation in sealed avionics enclosures. The JANS1N6129US/TR must be mounted with adequate lead length and board spacing to maintain junction temperature below 100 °C.
Does JANS1N6129US/TR have a cathode band marking?
Yes, JANS1N6129US/TR uses a visible cathode band on the DO-35 glass body to identify the cathode terminal. This marking is consistent with MIL-STD-130 labeling requirements and enables correct orientation during manual or automated assembly. The JANS1N6129US/TR cathode must connect to the higher-potential node in reverse-bias voltage reference or clamping configurations.
How does JANS1N6129US/TR differ from commercial 1N6129US?
JANS1N6129US/TR differs from 1N6129US in screening level, temperature rating, and qualification: it is MIL-PRF-19500/407 Class H qualified, rated for –65 °C to +175 °C ambient, and hermetically sealed. The 1N6129US is commercial-grade, rated only to +150 °C, and lacks MIL screening. Both share identical 200 V Zener voltage, but JANS1N6129US/TR is required for flight hardware.
JANS1N6129US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 4A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANS1N6129US/TR FAQ
1.How can I place an order for JANS1N6129US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6129US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6129US/TR reliable?
The price and inventory of JANS1N6129US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6129US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6129US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6129US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6129US/TR?
JANS1N6129US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6129US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6129US/TR?
For technical support, including JANS1N6129US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6129US/TR requirements.
6.How does Aetrix verify that JANS1N6129US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6129US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6129US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6129US/TR?
All JANS1N6129US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6129US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6129US/TR part is unused and in its original packaging.
Return procedure for JANS1N6129US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6129US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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