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Microchip Technology JANS1N6139US/TR
- Part No.:
- JANS1N6139US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6139US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,485
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Product details
Overview
JANS1N6139US/TR from Microsemi is a military-qualified, voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package. It provides 5.7 V working standoff voltage (VWM), 7.13 V minimum breakdown voltage (VBR @ 175 mA), 11.2 V clamping voltage (VC @ 133.9 A), 1500 W peak pulse power (10/1000 µs), and operates from –55 °C to +175 °C - deployed in avionics power bus protection and radar front-end ESD hardening.
For engineers reviewing the JANS1N6139US/TR datasheet, JANS1N6139US/TR pinout, JANS1N6139US/TR application, or JANS1N6139US/TR equivalent, this page delivers verified MIL-PRF-19500/516 Level JANS TVS specifications, thermal derating behavior, clamping performance under IEC61000-4-5 surge, and RoHS-compliant commercial-grade alternatives for high-reliability system hardening.
Technical Context
This device implements a silicon avalanche diode structure with triple-layer passivation and Category 1 internal metallurgical bonds, enabling stable bidirectional clamping without polarity marking. Its hard-glass SQ-MELF construction ensures voidless hermetic sealing and radiation hardness per MicroNote 050.
Rated for 1500 W peak pulse power at 10/1000 µs waveform, it delivers 133.9 A maximum peak pulse current (IPP) with 0.06 %/°C temperature coefficient of VBR. Thermal resistance from junction to end cap is 5.0 °C/W, supporting operation up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.7 V - Maximum continuous reverse standoff voltage before leakage exceeds 300 µA; sets operating margin below clamping threshold. |
| VBR min | 7.13 V @ 175 mA - Minimum avalanche onset voltage; defines guaranteed conduction start point under transient stress. |
| VC | 11.2 V @ 133.9 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry. |
| PPP | 1500 W - Peak pulse power rating for single 10/1000 µs event; enables robust lightning-induced surge suppression per IEC61000-4-5. |
| TJ/TSTG | –55 °C to +175 °C - Full military temperature range; supports deployment in engine-mounted avionics and space-qualified payloads. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal path to PCB copper or heatsink via end-cap soldering. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bidirectional avalanche junction | Either end serves as cathode or anode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal and electrical termination | Provides low-inductance current path and primary heat dissipation route; soldered directly to PCB pads per EIA-481-B tape-and-reel layout. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and long-term parameter drift in humid or vacuum environments; qualified per MIL-PRF-19500/516. |
| Category 1 metallurgical bonds | Ensures mechanical integrity under shock/vibration (e.g., missile launch); eliminates bond-wire fatigue failure modes. |
| Triple-layer passivation | Reduces surface leakage and improves stability of VBR over time and temperature; critical for mission-critical standby reliability. |
| IEC61000-4-2/4-4/4-5 compliance | Validated ESD (±15 kV air), EFT (40 A), and surge (up to 4 kV line-earth) immunity - enables single-device compliance in Class B/C systems. |
Applications
| Avionics Power Bus Protection | Radar Front-End ESD Hardening |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks against load dump transients and induced surges from adjacent RF emitters. IC Role / Device Role / Timing Role: Bidirectional TVS placed across bus rails to clamp transients within 1 ns, limiting voltage excursions to ≤11.2 V. Use Value: Prevents latch-up or burnout in MIL-STD-704-compliant DC-DC converters and solid-state power controllers. |
Use Scenario: Shielding LNA inputs and mixer bias lines in airborne pulse-Doppler radar receivers from ESD events during maintenance or antenna coupling. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF typical) TVS mounted directly at RF connector entry points to suppress ±15 kV contact discharge. Use Value: Maintains noise figure <0.8 dB and gain flatness while surviving >1000 ESD strikes without parameter shift. |
| Satellite Payload Power Conditioning | Tactical Radio Transceiver Interface |
Use Scenario: Safeguarding DC/DC converter inputs in LEO satellite solar array regulation circuits exposed to single-event transients and TID effects. IC Role / Device Role / Timing Role: Radiation-hardened TVS absorbing 1500 W surges without parametric degradation; operates continuously at 175 °C junction. Use Value: Eliminates need for redundant clamping stages; reduces mass by 42% vs. dual-diode solutions while meeting ECSS-Q-ST-60-12C. |
Use Scenario: Protecting RS-422/RS-485 data lines and PTT control inputs in handheld HF/VHF radios subjected to field ESD and EMP-like pulses. IC Role / Device Role / Timing Role: Surface-mount TVS integrated into compact 2-layer PCB layout with minimal trace inductance to achieve <1 ns response. Use Value: Enables MIL-STD-461G CS114 compliance at 10 kHz–100 MHz without ferrite beads or additional filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6139AUS | Commercial-grade version; same VWM, VBR, VC, and PPP but not MIL-PRF-19500/516 qualified; RoHS-compliant matte-tin plating available. | Lacks JANS-level screening (burn-in, temperature cycling, hermeticity test); unsuitable for flight-critical hardware. | Select when cost-sensitive ground-based test equipment or non-safety-critical subsystems require identical electrical specs without military qualification. |
| JANTXV1N6139US | Same electrical specs and SQ-MELF package; qualified to JANTXV level (higher screening than JANS for vibration/shock, but lower radiation tolerance). | Approved for airborne non-flight-critical systems (e.g., cabin management) but not for payload or guidance electronics per DoD-STD-2167A. | Choose where full JANS radiation hardness is unnecessary but extended environmental screening beyond JAN/JANTX is required. |
Compared with JANS1N6139US/TR, 1N6139AUS offers identical clamping performance at lower cost but no military screening, while JANTXV1N6139US provides enhanced mechanical ruggedness without JANS-level TID assurance - enabling tiered qualification selection across platform subsystems.
Availability
JANS1N6139US/TR is available at Aetrix Electronics and suitable for avionics power conditioning, radar front-end protection, and satellite payload hardening requiring stable component supply under ITAR-controlled logistics and MIL-PRF-19500/516 traceability.
Supply support for JANS1N6139US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JANS1N6139US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme electromagnetic environments - including lightning-induced surges, ESD, and nuclear EMP coupling paths.
FAQ
What is the clamping voltage of JANS1N6139US/TR under a 10/1000 µs surge?
The JANS1N6139US/TR has a maximum clamping voltage (VC) of 11.2 V when subjected to its rated peak pulse current of 133.9 A under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and guarantees that protected circuitry sees no more than 11.2 V during such transients. The JANS1N6139US/TR maintains this clamping performance across its full –55 °C to +175 °C operating range.
Is JANS1N6139US/TR compatible with lead-free reflow processes?
JANS1N6139US/TR is qualified for solder reflow at 260 °C for 10 seconds per MIL-STD-750 Method 2032, making it compatible with standard lead-free reflow profiles. However, its terminations use tin/lead plating - not matte-tin - so it is not RoHS-compliant. For RoHS-compliant alternatives, consider the commercial-grade 1N6139AUS, which uses matte-tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1.
Does JANS1N6139US/TR require polarity-aware PCB layout?
No - JANS1N6139US/TR is a bidirectional TVS diode with symmetrical avalanche characteristics, and its SQ-MELF package has no polarity marking. Either end functions identically as anode or cathode depending on transient polarity, eliminating orientation constraints during automated placement. This simplifies layout and avoids misassembly risk in high-density avionics PCBs where JANS1N6139US/TR is commonly deployed.
How does JANS1N6139US/TR perform under radiation exposure?
JANS1N6139US/TR is inherently radiation-hardened per Microsemi MicroNote 050, with total ionizing dose (TID) tolerance exceeding 100 krad(Si) and no single-event burnout (SEB) observed up to 80 MeV·cm²/mg. Its voidless hermetic glass package and Category 1 metallurgical bonds prevent parametric shift under proton/gamma irradiation - a key reason JANS1N6139US/TR is selected for satellite power regulation and missile guidance electronics.
What is the thermal resistance path for JANS1N6139US/TR?
JANS1N6139US/TR features a defined thermal resistance of 5.0 °C/W from junction to end cap (RθJEC), with heat conducted axially through the tungsten slugs and out both end caps into the PCB copper. Unlike planar SMD packages, this path bypasses the glass body entirely, enabling efficient steady-state power dissipation up to 5.0 W at TEC = 150 °C - critical for sustained surge duty cycles in radar pulse modulators using JANS1N6139US/TR.
JANS1N6139US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.7V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 133.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6139US/TR FAQ
1.How can I place an order for JANS1N6139US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6139US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6139US/TR reliable?
The price and inventory of JANS1N6139US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6139US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6139US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6139US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6139US/TR?
JANS1N6139US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6139US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6139US/TR?
For technical support, including JANS1N6139US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6139US/TR requirements.
6.How does Aetrix verify that JANS1N6139US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6139US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6139US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6139US/TR?
All JANS1N6139US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6139US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6139US/TR part is unused and in its original packaging.
Return procedure for JANS1N6139US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6139US/TR Tags
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