Microchip Technology JANS1N6140US/TR
- Part No.:
- JANS1N6140US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6140US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,882
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Product details
Overview
JANS1N6140US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS level. It features a 6.2 V working standoff voltage (VWM), 7.79 V minimum breakdown voltage (V(BR)) at 150 mA, 12.1 V clamping voltage (VC) at 124 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in aerospace power bus protection and avionics interface circuits.
For engineers reviewing the JANS1N6140US/TR datasheet, JANS1N6140US/TR pinout, JANS1N6140US/TR application, or JANS1N6140US/TR equivalent, key selection criteria include its military-grade reliability (JANS qualification), bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and compatibility with high-surge IEC61000-4-5 secondary lightning protection requirements.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass construction incorporates internal Category 1 metallurgical bonds and triple-layer passivation to ensure robustness under repeated surge stress and radiation-hardened operation per MicroNote 050.
It delivers 1500 W peak pulse power (10/1000 µs) while maintaining a low clamping ratio (VC/VWM = 1.94) and temperature coefficient of breakdown voltage (αV(BR) = 0.06 %/°C), enabling stable transient suppression across -55 °C to +175 °C junction temperature range without derating below 150 °C end-cap temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.2 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) min | 7.79 V @ 150 mA - guaranteed avalanche onset threshold; ensures predictable turn-on during transients. |
| VC @ IPP | 12.1 V @ 124 A - clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP | 1500 W - peak impulse power handling capability; supports high-energy lightning-induced surges per IEC61000-4-5. |
| TJ Range | -55 °C to +175 °C - extended operational envelope for space, missile, and engine-mounted electronics. |
| RθJEC | 5.0 °C/W - junction-to-end-cap thermal resistance; enables direct heatsinking via PCB copper or chassis contact. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style), with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking; either terminal serves as anode or cathode depending on transient polarity - simplifies layout and eliminates orientation errors. |
| End cap (glass body contact) | Thermal interface | Direct thermal path from junction to mounting surface; requires soldered or adhesive contact to PCB copper for effective heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal lines without polarity constraints. |
| Category 1 metallurgical bonds | Guarantees mechanical integrity and bond-wire survivability under shock, vibration, and thermal cycling in flight systems. |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over >20-year service life in humid or vacuum environments. |
| JANS qualification | Fulfills MIL-PRF-19500/516 screening for radiation tolerance, lot traceability, and burn-in - required for DoD spaceflight programs. |
Applications
| Aerospace Power Bus Protection | Avionics Data Interface Protection |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks from load dump and inductive switching transients. IC Role / Device Role / Timing Role: Standoff-clamping TVS placed across bus rails to clamp surges above 6.2 V while passing normal operating voltage. Use Value: Limits rail overvoltage to ≤12.1 V during 124 A transients, preventing damage to MIL-STD-704-compliant power converters and controllers. | Use Scenario: Shielding ARINC 429 or RS-422 differential receivers from ESD and coupled noise on external connectors. IC Role / Device Role / Timing Role: Bidirectional shunt protector on each signal line, leveraging symmetric clamping to handle ± transients without polarity concerns. Use Value: Maintains signal integrity under IEC61000-4-2 Level 4 (15 kV air/8 kV contact) ESD events while adding <0.5 pF parasitic capacitance. |
| Military Vehicle Control Systems | Satellite Payload Power Conditioning |
Use Scenario: Safeguarding CAN and MIL-STD-1553B bus nodes in tracked vehicle electronics exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Primary surge arrestor at connector entry points, coordinated with upstream fuses and downstream filters. Use Value: Withstands 1500 W pulses without degradation, meeting MIL-STD-461G CS115 and RS103 requirements for conducted/radiated immunity. | Use Scenario: Protecting DC-DC converter inputs in LEO satellite power management units subject to TID and displacement damage. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor mounted directly at converter input filter stage. Use Value: Inherent radiation hardness (per MicroNote 050) avoids upscreening costs; 175 °C max junction rating supports passive thermal design in vacuum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6140US | Same electrical specs but qualified to JANTXV level; higher screening rigor than JANS for burn-in and life test. | Preferred for ground-based radar and missile guidance where extended life testing is mandated over space radiation tolerance. | Select when program spec explicitly requires JANTXV-level screening rather than JANS radiation assurance. |
| 1N6140AUS | Commercial-grade version; same VWM, V(BR), VC, and PPP, but not MIL-qualified or radiation-hardened. | Suitable for non-mission-critical industrial controls or test equipment where cost and lead time outweigh reliability requirements. | Choose only for prototyping or commercial derivatives where MIL-PRF-19500 compliance is waived. |
Compared with JANTXV1N6140US and 1N6140AUS, JANS1N6140US/TR uniquely combines radiation hardness, hermeticity, and JANS-level screening - making it irreplaceable in orbital payload and nuclear-hardened systems where single-event burnout must be precluded.
Availability
JANS1N6140US/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics data interface protection, and military vehicle control systems requiring stable component supply across long production lifecycles and obsolescence-sensitive programs.
Supply support for JANS1N6140US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-voltage, and ultra-stable timing solutions.
The JANS1N6140US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme electromagnetic environments - including lightning-induced surges, ESD, and system-level transients in launch vehicles and spacecraft.
FAQ
What is the clamping voltage of JANS1N6140US/TR under a 10/1000 µs surge?
The JANS1N6140US/TR has a maximum clamping voltage (VC) of 12.1 V when subjected to its rated peak pulse current (IPP) of 124 A using a 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and reflects worst-case overvoltage seen by protected circuitry during standardized surge events. The JANS1N6140US/TR maintains this clamping performance across its full operating temperature range.
Is JANS1N6140US/TR RoHS compliant?
No, JANS1N6140US/TR is not RoHS compliant. Per the manufacturer's documentation, RoHS-compliant versions (marked with e3 suffix) are available only for commercial-grade variants such as 1N6140AUS. The JANS1N6140US/TR uses tin/lead plating on copper terminals and is manufactured to meet MIL-PRF-19500/516 requirements, which permit Pb-containing finishes for high-reliability applications.
Does JANS1N6140US/TR require polarity-aware PCB layout?
No, JANS1N6140US/TR does not require polarity-aware layout. As a bidirectional TVS, it exhibits symmetrical avalanche characteristics in both forward and reverse bias, and carries no polarity marking on the glass body. Either terminal may serve as anode or cathode depending on transient polarity - eliminating orientation constraints and reducing assembly risk in high-reliability board assembly.
What is the thermal resistance specification for JANS1N6140US/TR?
The JANS1N6140US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. This parameter enables direct thermal coupling from the silicon junction to the PCB copper or chassis via the glass body's end-cap contact surface. Effective heatsinking requires soldered or adhesive attachment of the entire glass barrel to thermally conductive material - critical for sustaining repetitive surge duty cycles in avionics power systems.
How does JANS1N6140US/TR differ from commercial 1N6140AUS in reliability testing?
JANS1N6140US/TR undergoes full MIL-PRF-19500/516 screening including radiation hardness assurance (per MicroNote 050), lot traceability, extended burn-in, and temperature cycling - all required for spaceflight use. In contrast, 1N6140AUS receives only commercial-grade quality assurance with no radiation testing or military screening. The JANS1N6140US/TR's hermetic seal and Category 1 bonds further differentiate its long-term reliability in vacuum and high-vibration environments.
JANS1N6140US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6.2V
- Voltage - Breakdown (Min):
- 7.79V
- Voltage - Clamping (Max) @ Ipp:
- 12.1V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6140US/TR FAQ
1.How can I place an order for JANS1N6140US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6140US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6140US/TR reliable?
The price and inventory of JANS1N6140US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6140US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6140US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6140US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6140US/TR?
JANS1N6140US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6140US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6140US/TR?
For technical support, including JANS1N6140US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6140US/TR requirements.
6.How does Aetrix verify that JANS1N6140US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6140US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6140US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6140US/TR?
All JANS1N6140US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6140US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6140US/TR part is unused and in its original packaging.
Return procedure for JANS1N6140US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6140US/TR Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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