My Inquiry
My Account
Microchip Technology JANS1N6146US/TR
- Part No.:
- JANS1N6146US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6146US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,655
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANS1N6146US/TR from Microsemi is a military-qualified, voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF (C) package. It provides 11.4 V working standoff voltage (VWM), 14.25 V minimum breakdown voltage (V(BR)) at 75 mA, and clamps to 21.0 V at 71.4 A peak pulse current (IPP) for 10/1000 µs waveform, delivering 1500 W peak pulse power. It is designed for lightning surge and ESD protection in high-reliability aerospace and defense power rail interfaces.
For engineers reviewing the JANS1N6146US/TR datasheet, JANS1N6146US/TR pinout, JANS1N6146US/TR application, or JANS1N6146US/TR equivalent, this part supports MIL-PRF-19500/516 JANS-level qualification, operates from –55 °C to +175 °C, features Category 1 metallurgical bonds, triple-layer passivation, and RoHS-compliant tin plating (commercial versions only).
Technical Context
This TVS diode functions as a bidirectional clamping device with no polarity marking, enabling symmetric transient suppression on AC-coupled or floating signal/power lines. Its hard-glass hermetic construction eliminates internal voids and ensures immunity to moisture ingress and thermal cycling stress.
It delivers 1500 W peak pulse power under 10/1000 µs waveform per IEC61000-4-5, with clamping voltage (VC = 21.0 V) tightly bounded relative to its 11.4 V standoff rating - a 84% clamping ratio - ensuring robust overvoltage margin for 12 V nominal systems. Standby leakage remains ≤20 µA at VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Working Standoff Voltage) | 11.4 V - Maximum continuous DC or repetitive peak voltage the device blocks without conduction; sets operating voltage ceiling for protected circuit. |
| V(BR) min @ I(BR) | 14.25 V @ 75 mA - Minimum voltage at which device enters controlled avalanche breakdown; defines turn-on threshold under surge. |
| VC @ IPP | 21.0 V @ 71.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream components. |
| PPP (Peak Pulse Power) | 1500 W - Maximum non-repetitive surge energy absorption capability; validates suitability for Level 3–4 IEC61000-4-5 lightning surges. |
| ID @ VWM | ≤20 µA - Leakage current at rated standoff; ensures negligible standby power loss and minimal loading on sensitive bias networks. |
| Junction Temp Range | –55 °C to +175 °C - Full military temperature range support; enables deployment in engine bays, avionics bays, and space-grade enclosures. |
| RθJEC | 5.0 °C/W - Thermal resistance from junction to end cap; informs heatsinking requirements when used in high-duty-cycle or repetitive surge scenarios. |
Pinout & Package
Package: SQ-MELF (C) - Voidless hermetically sealed hard glass case with tungsten slugs and square-end-cap terminals; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (Page 7): BD = 0.183–0.202 in, BL = 0.205–0.245 in, ECT = 0.019–0.028 in.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (Bidirectional) | Reversible current path | No polarity marking; either terminal serves as anode or cathode depending on transient polarity - enables single-device protection of AC or floating rails. |
| End Cap (Both Ends) | Thermal and electrical interface | Directly contacts PCB pads for low-inductance surge current return and primary heat dissipation path to copper; requires full-surface solder wetting. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of differential signals, AC lines, or ungrounded buses without polarity constraints or external diode pairing. |
| Category 1 metallurgical bonds | Guarantees bond integrity under extreme thermal shock and mechanical vibration - critical for launch, re-entry, and airborne mission profiles. |
| Triple-layer passivation | Prevents surface leakage and corrosion-induced parametric drift in humid, salt-laden, or outgassing environments (e.g., sealed avionics enclosures). |
| MIL-PRF-19500/516 JANS qualification | Validates manufacturing process control, lot traceability, screening (burn-in, temperature cycling), and failure rate limits per military reliability standards. |
| Voidless hermetic seal | Eliminates internal moisture pockets that could cause popcorning, delamination, or parameter shift during rapid thermal transients or long-term storage. |
Applications
| Aerospace Power Distribution | Defense Radar Front-End |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in satellite power conditioning units exposed to ESD and secondary lightning effects. IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed directly at connector entry point to shunt surge energy before it reaches DC/DC converters and FPGAs. Use Value: With 11.4 V VWM and 21.0 V VC, it maintains safe margin below 28 V rail while limiting transient overshoot to <21 V - preserving input stage MOSFETs and gate drivers. |
Use Scenario: Surge suppression on RF receiver LNA bias lines subject to induced transients from nearby high-power transmitter switching. IC Role / Device Role / Timing Role: Low-leakage (≤20 µA) TVS mounted adjacent to LNA IC to prevent gate oxide damage without degrading DC bias stability. Use Value: Sub-20 µA leakage avoids bias current error in precision current sources; hermetic seal prevents parameter drift in vacuum-compatible radar modules. |
| Tactical Vehicle Data Bus | Missile Guidance Sensor Interface |
Use Scenario: Hardening RS-485 transceivers on vehicle CAN backbone against load dump and alternator ripple-induced spikes. IC Role / Device Role / Timing Role: Bidirectional TVS placed across differential pair and common-mode line to suppress both differential and common-mode surges. Use Value: 1500 W PPP rating withstands automotive load-dump events (ISO 7637-2 Pulse 5a); SQ-MELF geometry minimizes parasitic inductance for fast response (<1 ns). |
Use Scenario: Protecting analog outputs of inertial measurement units (IMUs) from electrostatic discharge during handling and field maintenance. IC Role / Device Role / Timing Role: Standoff-rated TVS installed at sensor module connector to clamp ESD per MIL-STD-750 Method 1020 without affecting 0–5 V output linearity. Use Value: Non-sensitive-to-ESD design (per MIL-STD-750) eliminates pre-test preconditioning; 11.4 V VWM allows use on 10 V reference outputs without false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6146US | Same electrical specs but qualified to JANTXV level (more stringent screening than JANS); higher burn-in duration and extended temperature cycling. | Preferred for programs requiring extended reliability validation beyond JANS, such as manned spacecraft or nuclear command systems. | Select JANTXV1N6146US when program spec mandates JANTXV-level screening; JANS1N6146US/TR suffices for most flight-qualified subsystems. |
| 1N6146AUS (commercial) | Identical VWM, V(BR), VC, and PPP; differs in qualification level (no MIL-PRF-19500), RoHS-compliant matte-tin plating, and no radiation hardness data. | Suitable for ground-test equipment, lab prototypes, or commercial derivatives where military screening and radiation tolerance are not required. | Choose 1N6146AUS for cost-sensitive development phases or non-flight hardware; JANS1N6146US/TR required for flight hardware and radiation environments. |
Compared with JANTXV1N6146US and 1N6146AUS, JANS1N6146US/TR offers the optimal balance of MIL-PRF-19500/516 compliance, verified radiation hardness, and production-ready JANS-level screening - making it the standard choice for DoD-accredited flight hardware where qualification depth and supply chain traceability are mandatory.
Availability
JANS1N6146US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, defense radar front-end protection, tactical vehicle data bus hardening, and missile guidance sensor interface applications requiring stable component supply across extended program lifecycles.
Supply support for JANS1N6146US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The JANS1N6146US/TR belongs to Microsemi's MIL-PRF-19500/516-qualified TVS family, engineered specifically for survivability in mission-critical platforms where failure is not an option - including launch vehicles, satellites, and electronic warfare systems.
FAQ
What is the clamping voltage of JANS1N6146US/TR under a 10/1000 µs surge?
The JANS1N6146US/TR clamps to a maximum of 21.0 V when subjected to a 71.4 A peak pulse current with a 10/1000 µs waveform. This clamping voltage is measured per standard test conditions defined in MIL-PRF-19500/516 and ensures predictable overvoltage limiting for downstream 12 V–15 V logic and power stages. The 21.0 V VC value is guaranteed across the full –55 °C to +175 °C junction temperature range.
Is JANS1N6146US/TR RoHS compliant?
JANS1N6146US/TR uses standard tin/lead plating per MIL-PRF-19500/516 requirements and is not RoHS compliant. RoHS-compliant matte-tin plating is available only on commercial-grade variants (e.g., 1N6146AUS). The JANS1N6146US/TR retains lead-based terminations to ensure solder joint reliability under thermal cycling and mechanical shock - a requirement for JANS-level qualification.
Does JANS1N6146US/TR require polarity-aware PCB layout?
No - JANS1N6146US/TR is a bidirectional TVS with no polarity marking, meaning either end can serve as anode or cathode depending on transient polarity. Its SQ-MELF (C) package has identical square-end-cap terminals, and PCB layout requires symmetric pad geometry with no orientation dependency. This simplifies placement and eliminates risk of reverse installation in high-density military assemblies.
What is the maximum steady-state power dissipation of JANS1N6146US/TR at 25 °C ambient?
At TA = 25 °C, the JANS1N6146US/TR has a steady-state power dissipation rating of 3.0 W. This value assumes adequate PCB copper area for thermal conduction; derating begins linearly above 150 °C end-cap temperature and reaches zero at 175 °C. For continuous operation, thermal design must maintain end-cap temperature ≤150 °C using appropriate copper pour and via stitching.
How does JANS1N6146US/TR differ from commercial 1N6146AUS in terms of radiation tolerance?
JANS1N6146US/TR is characterized for inherent radiation hardness per Microsemi MicroNote 050, with validated performance up to 100 krad(Si) total ionizing dose (TID) and resilience to single-event effects (SEE) in space environments. The commercial 1N6146AUS lacks radiation test data, screening, or hardness assurance - making JANS1N6146US/TR the only qualified option for orbital or high-altitude platforms.
JANS1N6146US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 11.4V
- Voltage - Breakdown (Min):
- 14.25V
- Voltage - Clamping (Max) @ Ipp:
- 21V
- Current - Peak Pulse (10/1000µs):
- 71.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6146US/TR FAQ
1.How can I place an order for JANS1N6146US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6146US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6146US/TR reliable?
The price and inventory of JANS1N6146US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6146US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6146US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6146US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6146US/TR?
JANS1N6146US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6146US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6146US/TR?
For technical support, including JANS1N6146US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6146US/TR requirements.
6.How does Aetrix verify that JANS1N6146US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6146US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6146US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6146US/TR?
All JANS1N6146US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6146US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6146US/TR part is unused and in its original packaging.
Return procedure for JANS1N6146US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6146US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
