My Inquiry
My Account
Microchip Technology JANS1N6150AUS/TR
- Part No.:
- JANS1N6150AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6150AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,858
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANS1N6150AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS reliability level. It provides 16.7 V working standoff voltage (VWM), 20.9 V minimum breakdown voltage (V(BR)), 30.5 V clamping voltage (VC) at 49.2 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JANS1N6150AUS/TR datasheet, JANS1N6150AUS/TR pinout, JANS1N6150AUS/TR application, or JANS1N6150AUS/TR equivalent, key selection criteria include military-grade reliability certification, bidirectional surge suppression capability, glass-body thermal resistance (5.0 °C/W), and compatibility with high-reliability PCB assembly under MIL-STD-750 test conditions.
Technical Context
This device operates as a bidirectional clamping TVS diode with no polarity marking, relying on symmetric avalanche breakdown in both directions. Its hard-glass hermetic package incorporates tungsten slugs and Category 1 metallurgical bonds to ensure survivability under extreme thermal cycling and radiation environments.
It delivers 1500 W peak pulse power at 25 °C for 10/1000 µs transients while maintaining ≤5 µA standby current at VWM and a temperature coefficient of breakdown voltage (αV(BR)) of +0.085 %/°C - enabling stable clamping performance across –55 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16.7 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) min | 20.9 V @ 50 mA - guaranteed avalanche onset threshold; defines minimum overvoltage trigger point. |
| VC @ IPP | 30.5 V @ 49.2 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream components. |
| PPP | 1500 W - peak transient energy absorption capacity; enables protection against lightning-induced surges per IEC61000-4-5. |
| RθJEC | 5.0 °C/W - thermal resistance from junction to end cap; supports high-power pulse dissipation without thermal runaway. |
| TJ/TSTG | –55 °C to +175 °C - extended operational and storage temperature range; validated for aerospace and defense platforms. |
| ID @ VWM | ≤5 µA - ultra-low leakage at rated standoff; prevents unintended loading of low-power sensor or control circuits. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) - hermetically sealed voidless hard-glass body with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 4.65–5.13 mm, BL = 5.21–6.22 mm, ECT = 0.48–0.71 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetrical conduction allows placement without orientation check - simplifies automated SMT placement. |
| End Cap (both ends) | Thermal & electrical interface | Direct thermal path to PCB copper; enables efficient heat transfer during repetitive surge events. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity constraints. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, vibration, and thermal stress - required for JANS-level qualification. |
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in harsh environmental enclosures. |
| MIL-PRF-19500/516 qualification | Validates compliance with screening, testing, and traceability requirements for space- and mission-critical systems. |
| Non-sensitive to ESD | Passes MIL-STD-750 Method 1020 - eliminates need for ESD handling controls during board assembly. |
Applications
| Avionics Power Distribution | Satellite Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in flight control computers from load dump and lightning-induced transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed directly at connector entry point to limit surge voltage before filtering stage. Use Value: Clamps 1500 W surges to ≤30.5 V within nanoseconds - preserving downstream DC-DC converter input rating and preventing latch-up. |
Use Scenario: Safeguarding solar array regulator interfaces against electrostatic discharge and secondary lightning effects in LEO orbit. IC Role / Device Role / Timing Role: Standoff-rated transient suppressor mounted on primary power feedthroughs with direct thermal coupling to chassis ground. Use Value: Withstands –55 °C to +175 °C extremes and meets radiation hardness per MicroNote 050 - ensuring uninterrupted operation during orbital thermal cycling. |
| Tactical Radio Front-End | Missile Guidance Signal Conditioning |
Use Scenario: Shielding RF power amplifier bias rails from antenna-coupled ESD and EMP events in handheld radios. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) TVS placed adjacent to PA supply pins to avoid quiescent current interference. Use Value: Maintains <5 µA standby current at 16.7 V - prevents drift in precision bias networks while delivering sub-100 ns response to 49.2 A transients. |
Use Scenario: Securing analog sensor signal paths (e.g., gyroscope feedback) from switching noise and EFT bursts in guidance electronics. IC Role / Device Role / Timing Role: Bidirectional clamp on differential signal pairs to suppress common-mode surges without disrupting DC offset. Use Value: Symmetric breakdown ensures identical clamping in both polarities - preserves signal integrity in precision inertial measurement units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6150AUS | Lower reliability screening (JANTXV vs JANS); same electrical specs and package. | Approved for high-reliability ground systems but not space-qualified programs requiring full JANS screening. | Select when cost sensitivity outweighs requirement for full MIL-PRF-19500/516 JANS-level burn-in and lot acceptance testing. |
| 1N6150AUS (commercial) | No MIL qualification; RoHS-compliant matte-tin plating available; same VWM, VC, and PPP ratings. | Suitable for non-military industrial equipment where radiation tolerance and extended temperature validation are not required. | Choose for commercial avionics upgrades or test fixtures where full military screening adds unnecessary cost and lead time. |
Compared with JANS1N6150AUS/TR, JANTXV1N6150AUS offers identical surge performance with reduced screening rigor, while 1N6150AUS provides full electrical equivalence without military qualification - enabling tiered sourcing strategies across development, qualification, and production phases.
Availability
JANS1N6150AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite bus protection, tactical radio front-end design, and missile guidance signal conditioning requiring stable component supply across long-lifecycle defense programs.
Supply support for JANS1N6150AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N6150AUS/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in radiation-intensive, thermally extreme, and electromagnetically hostile environments.
FAQ
What is the clamping voltage of JANS1N6150AUS/TR under a 10/1000 µs surge?
The JANS1N6150AUS/TR has a maximum clamping voltage (VC) of 30.5 V when subjected to a 49.2 A peak pulse current with a 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the upper voltage limit imposed on protected circuitry during transient events. The JANS1N6150AUS/TR maintains this clamping performance across its full operating temperature range.
Is JANS1N6150AUS/TR compatible with lead-free reflow processes?
JANS1N6150AUS/TR is rated for solder temperature up to 260 °C for 10 seconds, making it compatible with standard lead-free reflow profiles. Its tin/lead-plated terminals are designed for reliable wetting and joint formation under IPC-J-STD-020 conditions. Note that RoHS-compliant matte-tin versions are only available in commercial-grade variants, not JANS.
Does JANS1N6150AUS/TR require polarity-aware placement on the PCB?
No - the JANS1N6150AUS/TR is a bidirectional TVS diode with no polarity marking, and its SQ-MELF package has identical electrical behavior in either orientation. This eliminates orientation verification during automated placement and reduces assembly risk in high-density layouts where space is constrained.
How does JANS1N6150AUS/TR meet MIL-PRF-19500/516 qualification requirements?
JANS1N6150AUS/TR undergoes full JANS-level screening per MIL-PRF-19500/516, including lot acceptance testing, burn-in, thermal cycling, and hermeticity validation. Its Category 1 metallurgical bonds, voidless glass seal, and extended temperature range (–55 °C to +175 °C) are all verified during qualification - confirming suitability for mission-critical defense applications.
What is the steady-state power dissipation capability of JANS1N6150AUS/TR at 25 °C ambient?
At TA = 25 °C, the JANS1N6150AUS/TR supports a steady-state power dissipation (PD) of 3.0 W. This rating assumes adequate PCB thermal management; derating is linear above 150 °C end-cap temperature, reaching zero at 175 °C. The device's 5.0 °C/W junction-to-end-cap thermal resistance enables effective heat transfer in properly designed layouts.
JANS1N6150AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 16.7V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 49.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6150AUS/TR FAQ
1.How can I place an order for JANS1N6150AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6150AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6150AUS/TR reliable?
The price and inventory of JANS1N6150AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6150AUS/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6150AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6150AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6150AUS/TR?
JANS1N6150AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6150AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6150AUS/TR?
For technical support, including JANS1N6150AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6150AUS/TR requirements.
6.How does Aetrix verify that JANS1N6150AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6150AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6150AUS/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6150AUS/TR?
All JANS1N6150AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6150AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6150AUS/TR part is unused and in its original packaging.
Return procedure for JANS1N6150AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6150AUS/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
