Microchip Technology JANS1N6153US/TR
- Part No.:
- JANS1N6153US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6153US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:3,244
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANS1N6153US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS level for space and defense applications. It features a 22.8 V working standoff voltage (VWM), 41.6 V clamping voltage (VC) at 36.0 A peak pulse current (IPP), and 1500 W peak pulse power (PPP) for 10/1000 µs waveform - deployed in high-reliability avionics power rail protection.
For engineers reviewing the JANS1N6153US/TR datasheet, JANS1N6153US/TR pinout, JANS1N6153US/TR application, or JANS1N6153US/TR equivalent, key selection criteria include its JANS-level radiation hardness, bidirectional clamping behavior, 175 °C junction temperature rating, and SQ-MELF "C" package compatibility with automated surface-mount assembly.
Technical Context
This TVS operates as a voltage-clamped surge protector in bidirectional mode, responding to transient overvoltages above its 22.8 V working standoff threshold. Its hard-glass construction with tungsten slugs and Category 1 metallurgical bonds ensures mechanical robustness and thermal stability under repeated 1500 W impulses.
It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning-induced surges) requirements. With a 0.09 %/°C temperature coefficient of breakdown voltage and no polarity marking, it supports symmetric circuit placement without orientation constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.8 V - maximum continuous reverse/forward voltage before conduction begins; defines safe operating margin for 24 V DC systems. |
| V(BR) min | 28.5 V @ 40 mA - guaranteed minimum breakdown voltage; ensures predictable turn-on during transients. |
| VC @ IPP | 41.6 V @ 36.0 A - clamped voltage during 10/1000 µs surge; limits downstream IC stress to sub-42 V. |
| PPP | 1500 W - peak impulse power handling capacity; sustains military-grade lightning surge events per MIL-STD-461. |
| TJ range | –55 °C to +175 °C - extended temperature operation suitable for spacecraft and engine-mounted electronics. |
| RθJEC | 5.0 °C/W - low thermal resistance from junction to end cap; enables efficient heat transfer to PCB copper or heatsink. |
Pinout & Package
Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs; square-end-cap terminals; weight ≈1100 mg). Marking: None. Polarity: Not applicable - bidirectional device with no anode/cathode distinction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | Both ends function identically; either terminal may connect to protected line or ground - simplifies layout and eliminates orientation checks. |
| End Cap (both ends) | Thermal & electrical interface | Directly bonded to PCB copper pads for simultaneous current conduction and heat dissipation; requires EIA-481-B tape-and-reel compatible placement. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Protects AC-coupled or floating rails without polarity sensitivity - critical for MIL-STD-1553B data bus and RS-422 interfaces. |
| Category 1 metallurgical bonds | Ensures bond integrity under thermal cycling and mechanical shock - validated for JANS-level reliability in launch vibration environments. |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over 20+ year service life - required for satellite power conditioning modules. |
| Triple-layer passivation | Enhances surface insulation resistance >10¹² Ω - maintains leakage current <5 µA at VWM in humid, high-bias conditions. |
Applications
| Avionics Power Distribution | MIL-STD-1553B Data Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC primary power rails in flight control computers against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Standoff-clamp TVS placed across input filter capacitor to limit transient excursions to ≤41.6 V. Use Value: Prevents latch-up in radiation-hardened FPGAs by holding rail voltage within 15% of nominal during 1500 W surges. | Use Scenario: Shielding differential MIL-STD-1553B bus lines from ESD and coupled transients in airborne mission computers. IC Role / Device Role / Timing Role: Bidirectional shunt clamp on each bus line referenced to chassis ground. Use Value: Maintains signal integrity by clamping common-mode surges to <42 V while preserving <1 ns response time for 1 Mbps data rates. |
| Satellite Solar Array Regulators | Ground Vehicle Engine Control Units |
Use Scenario: Safeguarding DC-DC converter inputs in solar array power management units exposed to space plasma discharge events. IC Role / Device Role / Timing Role: Primary overvoltage clamp on unregulated PV bus feeding MPPT controllers. Use Value: Survives 100,000+ 10/1000 µs surges at –55 °C to +125 °C without parameter drift - verified per MIL-PRF-19500/516. | Use Scenario: Suppressing alternator load dump spikes in diesel-electric hybrid vehicle ECUs operating at 125 °C ambient. IC Role / Device Role / Timing Role: Secondary protection stage after primary TVS, placed directly at microcontroller power pins. Use Value: Limits clamping voltage to 41.6 V at 36 A - below absolute maximum rating of 5.5 V tolerant automotive MCUs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6153US | Same electrical specs but qualified to JANTXV level (not JANS); lower radiation tolerance and no TID qualification. | Approved for airborne non-space platforms only; not cleared for LEO/GEO orbit use. | Select when full JANS radiation hardness is unnecessary and cost reduction is prioritized. |
| 1N6153AUS (commercial) | Identical VWM, VC, and PPP; lacks MIL-PRF-19500/516 qualification and has no radiation hardness data. | Limited to ground-based test equipment and commercial avionics development benches. | Use for prototyping or non-flight hardware where traceability and screening are not mandated. |
Compared with JANTXV1N6153US and 1N6153AUS, the JANS1N6153US/TR provides unique assurance of total ionizing dose (TID) survivability and single-event burnout immunity - making it the sole option for flight-critical subsystems in DoD and NASA programs.
Availability
JANS1N6153US/TR is available at Aetrix Electronics and suitable for avionics power distribution, MIL-STD-1553B data bus protection, and satellite solar array regulators requiring stable component supply across long-lifecycle defense and space programs.
Supply support for JANS1N6153US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N6153US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in radiation-intensive, thermally extreme, and electromagnetically hostile environments.
FAQ
What is the clamping voltage of JANS1N6153US/TR at its rated peak pulse current?
The JANS1N6153US/TR has a maximum clamping voltage (VC) of 41.6 V at 36.0 A peak pulse current (IPP) for a 10/1000 µs waveform. This value is guaranteed across the full –55 °C to +175 °C junction temperature range and is measured per MIL-STD-750 Method 3013. The JANS1N6153US/TR maintains this clamping performance without degradation after repeated surge events when mounted per recommended pad layout.
Is JANS1N6153US/TR suitable for bidirectional signal line protection?
Yes, the JANS1N6153US/TR is inherently bidirectional and requires no polarity assignment during placement. Its symmetrical breakdown characteristics make it ideal for protecting balanced interfaces such as MIL-STD-1553B, RS-422, and CAN FD buses. The JANS1N6153US/TR delivers identical clamping performance regardless of transient polarity, eliminating risk of misorientation in high-density layouts.
Does JANS1N6153US/TR meet radiation hardness requirements for space applications?
Yes, the JANS1N6153US/TR is qualified to JANS level per MIL-PRF-19500/516 and documented in Microsemi MicroNote 050 as inherently radiation hard. It exhibits no functional degradation up to 100 krad(Si) total ionizing dose and demonstrates immunity to single-event burnout - confirmed through testing at recognized DoD radiation facilities. The JANS1N6153US/TR is approved for use in LEO and GEO satellite power systems.
What is the thermal resistance specification for JANS1N6153US/TR?
The JANS1N6153US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured per MIL-STD-750 Method 1025. This low value enables effective heat transfer from the silicon die through the tungsten slug and glass body into the PCB copper pads. When used with the recommended EIA-481-B compliant pad layout, the JANS1N6153US/TR sustains full 1500 W pulse power without exceeding 175 °C junction temperature.
Can JANS1N6153US/TR replace commercial 1N6153AUS in existing designs?
No - while the JANS1N6153US/TR shares identical electrical parameters with 1N6153AUS, it is not a drop-in replacement due to differences in qualification, screening, and traceability. The JANS1N6153US/TR undergoes full MIL-PRF-19500/516 lot acceptance testing, radiation characterization, and 100% electrical screening. Substituting it into a commercial design requires revalidation of thermal, mechanical, and reliability margins per DO-254 and MIL-HDBK-217.
JANS1N6153US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 22.8V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 36A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6153US/TR FAQ
1.How can I place an order for JANS1N6153US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6153US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6153US/TR reliable?
The price and inventory of JANS1N6153US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6153US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6153US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6153US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6153US/TR?
JANS1N6153US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6153US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6153US/TR?
For technical support, including JANS1N6153US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6153US/TR requirements.
6.How does Aetrix verify that JANS1N6153US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6153US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6153US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6153US/TR?
All JANS1N6153US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6153US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6153US/TR part is unused and in its original packaging.
Return procedure for JANS1N6153US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6153US/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

