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Microchip Technology JANS1N6156AUS/TR
- Part No.:
- JANS1N6156AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6156AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,750
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Product details
Overview
JANS1N6156AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 29.7 V working standoff voltage (VWM), and 53.6 V clamping voltage (VC) at 28.0 A peak pulse current (IPP). It operates across –55 °C to +175 °C and is used in high-reliability aerospace power bus protection.
For engineers reviewing the JANS1N6156AUS/TR datasheet, JANS1N6156AUS/TR pinout, JANS1N6156AUS/TR application, or JANS1N6156AUS/TR equivalent, key selection criteria include MIL-PRF-19500/516 JANS qualification, bidirectional clamping behavior, 5.0 µA max standby current at VWM, Category 1 metallurgical bonds, and hard-glass construction for radiation-hardened environments.
Technical Context
This device functions as a bidirectional voltage-clamping protector with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its 29.7 V VWM and 37.1 V minimum V(BR) define the operational window before conduction begins, while 53.6 V VC at 28.0 A IPP establishes the maximum transient voltage seen by downstream circuitry during a 10/1000 µs surge.
Thermal performance is defined by 5.0 °C/W junction-to-end-cap resistance (RθJEC) and linear derating of off-state power above 150 °C end-cap temperature. It meets ESD immunity per MIL-STD-750 Method 1020 and lightning-induced surge protection per IEC 61000-4-5 select levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 29.7 V - Maximum continuous reverse or forward voltage before significant leakage; sets operating margin below clamping threshold. |
| V(BR) min | 37.1 V @ 30 mA - Minimum voltage at which avalanche breakdown initiates; ensures predictable turn-on under transients. |
| VC @ IPP | 53.6 V @ 28.0 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress on protected ICs. |
| IPP | 28.0 A - Peak current sustained during standardized surge; directly supports 1500 W pulse power rating. |
| ID @ VWM | 5 µA - Standby leakage at rated standoff voltage; negligible loading on 28 V power rails. |
| αV(BR) | 0.095 %/°C - Temperature coefficient of breakdown voltage; enables stable clamping over –55 °C to +175 °C. |
| TJ/TSTG | –55 °C to +175 °C - Full military-grade junction and storage temperature range; validated for space and avionics thermal cycling. |
Pinout & Package
SQ-MELF (Square End-Cap Metal Electrode Leadless Face) surface-mount package: hermetically sealed voidless hard glass body with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional operation eliminates orientation dependency during placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end serves as anode or cathode depending on transient polarity; no DC bias directionality required. |
| End Cap (both ends) | Current-carrying terminal & thermal path | Primary heat dissipation interface to PCB pad; RθJEC = 5.0 °C/W enables high-power transient handling without heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in vacuum or humid environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, vibration, and thermal cycling per MIL-STD-883. |
| MIL-PRF-19500/516 JANS qualification | Validated reliability for Class S (space) and Class H (high-reliability) applications with full lot traceability. |
| Triple-layer passivation | Reduces surface leakage and enhances long-term stability of V(BR) and VC parameters in radiation fields. |
| Non-ESD-sensitive construction | Withstands >30 kV HBM without parameter shift-enables handling without special ESD controls during assembly. |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protection of 28 V DC power buses in satellite payload modules against load dump and switching transients. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed across input rails upstream of DC/DC converters and FPGAs. Use Value: Limits transient excursions to ≤53.6 V during 28 A surges, preserving 30 V absolute maximum ratings of downstream regulators and ASICs. |
Use Scenario: Shielding analog sensor inputs (e.g., RTDs, strain gauges) in flight control computers from EFT coupling. IC Role / Device Role / Timing Role: Low-leakage (5 µA) standoff protector mounted at connector entry point before signal conditioning amplifiers. Use Value: Maintains <1 µA error contribution at 29.7 V bias while clamping 1 kV/50 ns bursts per IEC 61000-4-4 Level 4. |
| Military Vehicle ECUs | Spacecraft Telemetry Systems |
Use Scenario: Guarding CAN FD transceivers and microcontrollers in armored vehicle engine control units against ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Primary rail clamp on 12 V/24 V supply lines with fast response (<1 ns) to 10/1000 µs threats. Use Value: Delivers 1500 W pulse power handling without degradation after 1000+ surge events-validated per MIL-STD-1275E. |
Use Scenario: Safeguarding telemetry RF front-end LNA bias lines against secondary lightning effects in low-earth orbit platforms. IC Role / Device Role / Timing Role: Radiation-hardened (MicroNote 050) TVS integrated into hermetic module substrate with tungsten slug thermal anchoring. Use Value: Withstands 100 krad(Si) TID and maintains VC drift <±3% after proton irradiation-critical for mission-critical comms links. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANS1N6155AUS/TR | Lower VWM (27.4 V), lower VC (49.9 V), higher IPP (30.1 A); same package and qualification level. | Better suited for 24 V systems requiring tighter clamping margin below 50 V. | Select when system VMAX is <50 V and 28 V rail tolerance allows 27.4 V standoff. |
| JANS1N6157AUS/TR | Higher VWM (32.7 V), higher VC (59.1 V), lower IPP (25.4 A); identical construction and qualification. | Preferred for 32 V avionics buses where higher standoff prevents false triggering on ripple. | Choose for 32 V nominal systems needing ≥32.7 V VWM to avoid conduction during normal 10% line variation. |
Compared with JANS1N6155AUS/TR and JANS1N6157AUS/TR, the JANS1N6156AUS/TR provides optimal balance for 28 V aerospace buses: its 29.7 V VWM avoids nuisance conduction while delivering 53.6 V clamping-tighter than JANS1N6157AUS/TR yet more robust than JANS1N6155AUS/TR under combined thermal and surge stress.
Availability
JANS1N6156AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, military vehicle ECUs, and spacecraft telemetry systems requiring stable component supply with full MIL-PRF-19500/516 traceability and extended lifecycle support.
Supply support for JANS1N6156AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and extended-temperature solutions.
The JANS1N6156AUS/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme environments-including vacuum, thermal cycling, ionizing radiation, and high-energy transients-without derating or external shielding.
FAQ
What is the clamping voltage of the JANS1N6156AUS/TR under a standard 10/1000 µs surge?
The JANS1N6156AUS/TR has a maximum clamping voltage (VC) of 53.6 V at 28.0 A peak pulse current (IPP) under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3019 and defines the upper voltage limit imposed on protected circuits during surge events. The JANS1N6156AUS/TR maintains this clamping performance across its full qualified temperature range of –55 °C to +175 °C.
Is the JANS1N6156AUS/TR RoHS compliant?
No, the JANS1N6156AUS/TR is not RoHS compliant. As a JANS-qualified military part, it uses tin/lead-plated copper terminals per MIL-PRF-19500/516 requirements. RoHS-compliant matte-tin plating is only available on commercial-grade versions (e.g., 1N6156AUS without JAN/JANS prefix), not on JANS1N6156AUS/TR. The JANS1N6156AUS/TR retains lead content to ensure solder joint reliability under thermal shock and vibration.
Does the JANS1N6156AUS/TR require polarity-aware PCB layout?
No, the JANS1N6156AUS/TR does not require polarity-aware layout. It is a bidirectional TVS diode with symmetrical avalanche characteristics-either end functions identically as anode or cathode depending on transient polarity. The device has no polarity marking, and its SQ-MELF package is rotationally symmetric. This simplifies automated placement and eliminates risk of reverse installation during assembly of the JANS1N6156AUS/TR.
What is the maximum steady-state power dissipation of the JANS1N6156AUS/TR at 25 °C ambient?
The JANS1N6156AUS/TR has a maximum steady-state power dissipation (PD) of 3.0 W at TA = 25 °C, as specified in the Absolute Maximum Ratings table. This rating assumes controlled thermal resistance from mounting point to ambient-typically achieved using full-surface copper pads per the recommended pad layout. Derating begins linearly above 25 °C ambient, reaching zero at 150 °C case temperature per Figure 4 in the datasheet for the JANS1N6156AUS/TR.
How does the JANS1N6156AUS/TR perform under radiation exposure?
The JANS1N6156AUS/TR is inherently radiation-hardened per Microsemi MicroNote 050, exhibiting minimal parametric shift after total ionizing dose (TID) exposure up to 100 krad(Si). Its hard-glass construction and Category 1 metallurgical bonds prevent displacement damage and maintain V(BR) and VC stability. This radiation tolerance is intrinsic to the JANS1N6156AUS/TR design and does not require additional shielding or derating in LEO or GEO missions.
JANS1N6156AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 29.7V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.6V
- Current - Peak Pulse (10/1000µs):
- 28A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6156AUS/TR FAQ
1.How can I place an order for JANS1N6156AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6156AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6156AUS/TR reliable?
The price and inventory of JANS1N6156AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6156AUS/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6156AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6156AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6156AUS/TR?
JANS1N6156AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6156AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6156AUS/TR?
For technical support, including JANS1N6156AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6156AUS/TR requirements.
6.How does Aetrix verify that JANS1N6156AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6156AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6156AUS/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6156AUS/TR?
All JANS1N6156AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6156AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6156AUS/TR part is unused and in its original packaging.
Return procedure for JANS1N6156AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6156AUS/TR Tags
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