Microchip Technology JANS1N6157US/TR
- Part No.:
- JANS1N6157US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6157US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,702
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Product details
Overview
JANS1N6157US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS reliability level. It provides 32.7 V working standoff voltage (VWM), 40.9 V minimum breakdown voltage (V(BR)), 59.1 V clamping voltage (VC) at 25.4 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in high-reliability military avionics power rail protection.
For engineers reviewing the JANS1N6157US/TR datasheet, JANS1N6157US/TR pinout, JANS1N6157US/TR application, or JANS1N6157US/TR equivalent, key selection criteria include its JANS-level qualification, bidirectional clamping behavior, hard-glass SQ-MELF package, -55°C to +175°C operating junction temperature, and compliance with IEC61000-4-2/4-4/4-5 transient immunity standards.
Technical Context
This device operates as a bidirectional avalanche diode TVS, leveraging Category 1 metallurgical bonds and triple-layer passivation for radiation-hardened, voidless hermetic sealing. Its clamping action begins at V(BR) ≥ 40.9 V and limits transients to VC ≤ 59.1 V under 25.4 A IPP, with thermal resistance RθJEC = 5.0 °C/W enabling robust power dissipation in constrained aerospace PCB layouts.
Designed for MIL-PRF-19500/516 Class JANS, it supports continuous operation up to TJ = +175°C and derates linearly above TEC = 150°C. The SQ-MELF "C" package features square-end-cap terminals for precise automated placement and solder joint integrity in high-vibration environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 32.7 V - Maximum continuous reverse standoff voltage before conduction; defines safe operating margin below breakdown in DC power rails. |
| V(BR) min | 40.9 V @ 30 mA - Minimum avalanche initiation voltage; ensures predictable turn-on threshold across temperature and lot variation. |
| VC @ IPP | 59.1 V @ 25.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capability; enables suppression of lightning-induced surges per IEC61000-4-5 Level 3–4. |
| TJ range | -55°C to +175°C - Full military-grade junction temperature range; supports operation in engine bays, space payloads, and radar front-ends. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; allows direct heat sinking to metal chassis or thermal pads without heatsinks. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff; negligible loading on low-power sensor bias networks. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass SQ-MELF "C" package with tungsten slugs and tin/lead-plated copper terminals. No polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end serves as anode or cathode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal and electrical termination | Direct thermal path to PCB copper or chassis; functions as both current return and heat sink interface. |
Key Features
| Feature | Design Value |
|---|---|
| JANS qualification per MIL-PRF-19500/516 | Guarantees screening, testing, and traceability for mission-critical defense systems with zero-failure tolerance. |
| Voidless hermetic glass seal | Eliminates internal moisture ingress and bond degradation over 20+ year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Enables >100 krad(Si) total ionizing dose (TID) tolerance and survivability under neutron/gamma irradiation. |
| Triple-layer passivation | Prevents surface leakage and premature breakdown under high-humidity, salt fog, or contamination exposure. |
| SQ-MELF square-end-cap geometry | Ensures repeatable coplanarity and solder joint strength in reflow profiles; eliminates tombstoning in automated SMT lines. |
Applications
| Aerospace Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in satellite power management units against ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed directly at connector entry point to shunt transients before reaching DC-DC converters. Use Value: Withstands 1500 W surges while maintaining VWM = 32.7 V margin above nominal 28 V rail, ensuring no false triggering during load dumps. |
Use Scenario: Input protection for engine control unit (ECU) microcontrollers exposed to ISO 7637-2 pulse 1/2a/5a in tracked vehicle platforms. IC Role / Device Role / Timing Role: Primary surge clamp on 12 V/24 V supply line, coordinated with upstream fuses and downstream LC filters. Use Value: JANS qualification ensures operation at -55°C to +175°C ambient, supporting cold-start and under-hood thermal extremes without parameter drift. |
| Naval Radar Front-Ends | Tactical Radio Transceivers |
Use Scenario: RF power amplifier bias line protection in shipboard S-band radar modules subject to EMP and induced coupling. IC Role / Device Role / Timing Role: Fast-response TVS mounted adjacent to GaN HEMT gate drivers to limit voltage overshoot during switching transitions. Use Value: 59.1 V clamping voltage prevents gate oxide breakdown in sensitive RF semiconductors while surviving repeated 10/1000 µs surges. |
Use Scenario: Antenna port and battery input protection in handheld HF/VHF radios used in expeditionary communications. IC Role / Device Role / Timing Role: Dual-role TVS suppressing both ESD (IEC61000-4-2 ±15 kV contact) and burst noise (IEC61000-4-4 ±2 kV). Use Value: Bidirectional symmetry eliminates polarity concerns during field repair; RoHS-compliant variants available for commercial export versions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6157US | Same electrical specs but qualified to JANTXV level (lower screening rigor than JANS); RθJEC = 5.0 °C/W unchanged. | Approved for non-spaceflight military programs where full JANS radiation and burn-in requirements are waived. | Select when cost and lead time are prioritized over extreme radiation hardness and 100% lot traceability. |
| 1N6157AUS (commercial) | Identical VWM, V(BR), VC, and PPP; lacks MIL-PRF-19500/516 qualification and Category 1 bonds; RoHS-compliant matte-tin plating. | Suitable for industrial test equipment or ground-based comms where environmental stress is moderate. | Choose for prototyping or non-mission-critical production where JANS documentation and screening are unnecessary. |
Compared with JANTXV1N6157US and 1N6157AUS, the JANS1N6157US/TR delivers verified radiation tolerance, full MIL-PRF-19500/516 documentation, and guaranteed 175°C junction operation - making it the only option for space-qualified or nuclear-hardened systems requiring zero latent defects.
Availability
JANS1N6157US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle ECUs, naval radar front-ends, and tactical radio transceivers requiring stable component supply across extended product lifecycles.
Supply support for JANS1N6157US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec components.
The JANS1N6157US/TR belongs to Microsemi's legacy MIL-PRF-19500/516 TVS family, engineered specifically for failure-intolerant systems where transient suppression must remain functional after decades of storage and extreme environmental exposure.
FAQ
What does the "JANS" prefix signify for JANS1N6157US/TR?
The "JANS" prefix certifies that JANS1N6157US/TR meets MIL-PRF-19500/516 Class JANS requirements, including 100% lot traceability, extended temperature screening (-55°C to +175°C), radiation hardness validation, and hermeticity testing. This level exceeds JANTXV and is mandatory for spaceflight and nuclear command systems where zero latent defects are non-negotiable.
Is JANS1N6157US/TR unidirectional or bidirectional, and how does that affect circuit placement?
JANS1N6157US/TR is a bidirectional TVS, meaning it clamps voltage transients of either polarity symmetrically. There is no anode/cathode marking, and orientation during PCB placement is irrelevant - simplifying assembly and eliminating risk of reverse installation in high-density layouts.
What is the significance of the "TR" suffix in JANS1N6157US/TR?
The "TR" suffix indicates tape-and-reel packaging per EIA-481-B standard, optimized for automated SMT placement. JANS1N6157US/TR ships in reels compatible with pick-and-place machines, with carrier tape designed to preserve hermetic integrity and prevent mechanical damage to the SQ-MELF glass body during handling.
How does JANS1N6157US/TR perform under repeated surge events?
JANS1N6157US/TR supports an impulse repetition rate of 0.01%, meaning it can safely absorb multiple 1500 W, 10/1000 µs surges provided ≥10 s elapses between pulses. Its hard-glass construction and Category 1 bonds prevent parametric shift or catastrophic failure even after hundreds of validated surge cycles.
Can JANS1N6157US/TR replace commercial 1N6157AUS in existing designs?
JANS1N6157US/TR shares identical electrical parameters (VWM = 32.7 V, VC = 59.1 V, PPP = 1500 W) with 1N6157AUS and fits the same SQ-MELF footprint, but adds JANS-level screening, radiation tolerance, and hermetic validation. Replacement requires no layout change but mandates updated qualification documentation for military/aerospace certification.
JANS1N6157US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 32.7V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.1V
- Current - Peak Pulse (10/1000µs):
- 25.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6157US/TR FAQ
1.How can I place an order for JANS1N6157US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6157US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6157US/TR reliable?
The price and inventory of JANS1N6157US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6157US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6157US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6157US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6157US/TR?
JANS1N6157US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6157US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6157US/TR?
For technical support, including JANS1N6157US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6157US/TR requirements.
6.How does Aetrix verify that JANS1N6157US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6157US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6157US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6157US/TR?
All JANS1N6157US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6157US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6157US/TR part is unused and in its original packaging.
Return procedure for JANS1N6157US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6157US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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