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Microchip Technology JANS1N6158US/TR
- Part No.:
- JANS1N6158US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6158US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,581
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Product details
Overview
JANS1N6158US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS level for space-grade reliability. It features a 35.8 V working standoff voltage (VWM), 44.7 V minimum breakdown voltage (V(BR)), 64.6 V clamping voltage (VC) at 23.2 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It is used in radiation-hardened avionics power bus protection.
For engineers reviewing the JANS1N6158US/TR datasheet, JANS1N6158US/TR pinout, JANS1N6158US/TR application, or JANS1N6158US/TR equivalent, key selection criteria include its JANS-level military qualification, bidirectional clamping behavior, hard-glass SQ-MELF package, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This TVS operates bidirectionally with no polarity marking and relies on silicon avalanche junctions with Category 1 metallurgical bonds for high-reliability transient suppression. Its clamping action begins at V(BR) ≥ 44.7 V and limits voltage to ≤ 64.6 V under 23.2 A (10/1000 µs), enabling robust protection of downstream DC-DC converters and interface ICs in harsh environments.
Thermal performance is defined by RθJEC = 5.0 °C/W and operation across –55 °C to +175 °C junction temperature. Standby leakage remains ≤5 µA at VWM = 35.8 V, supporting low-power monitoring circuits without loading error.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 35.8 V - Maximum continuous reverse/forward voltage before conduction begins; sets operating margin for 28 V aerospace buses. |
| V(BR) min | 44.7 V @ 25 mA - Avalanche onset threshold; ensures reliable triggering above nominal rail voltage. |
| VC @ IPP | 64.6 V @ 23.2 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress on protected ICs. |
| PPP | 1500 W - Peak impulse power handling; supports MIL-STD-461 CS115 and IEC61000-4-5 Level 3 surges. |
| ID @ VWM | ≤5 µA - Ultra-low leakage at rated standoff; avoids signal integrity degradation in high-impedance sensing paths. |
| TJ Range | –55 °C to +175 °C - Full military temperature range; validated for satellite payload and engine control units. |
| αV(BR) | 0.095 %/°C - Predictable voltage drift over temperature; enables accurate margining in thermal cycling designs. |
Pinout & Package
Package: SQ-MELF (Square-end-cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; dimensions per Microsemi T4-LDS-0278-1 Rev. 2: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetric terminals enable identical clamping in either direction-ideal for AC-coupled or floating bus protection. |
| End Cap (both ends) | Thermal & electrical interface | Direct thermal path to PCB pad; RθJEC = 5.0 °C/W enables high-power dissipation without heatsink in constrained layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of differential or ungrounded lines without polarity concerns-reduces BOM count vs. back-to-back diode solutions. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal shock and vibration; required for JANS-level qualification per MIL-PRF-19500/516. |
| Voidless hermetic glass seal | Eliminates internal moisture ingress and delamination risk; ensures >20-year field life in vacuum or high-humidity mission profiles. |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050; suitable for LEO/MEO satellite power conditioning without additional shielding or derating. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-line lightning surges-meets DO-160 Section 22 requirements. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC main bus in satellite power management units from load dump and switching transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp placed directly across bus rails to limit fault voltage to <65 V during 1500 W surges. Use Value: Prevents latch-up or burnout of downstream DC-DC controllers (e.g., radiation-hardened PWM ICs) during launch-stage power sequencing events. | Use Scenario: Shielding ARINC 429 or MIL-STD-1553B data lines from coupled transients induced by nearby power switching. IC Role / Device Role / Timing Role: Bidirectional shunt device mounted at connector entry point to clamp common-mode surges before reaching bus transceivers. Use Value: Maintains signal integrity by limiting transient overshoot to <65 V while adding <0.5 pF capacitance-no data rate degradation at 1 Mbps. |
| Missile Guidance Electronics | Nuclear Command & Control Systems |
Use Scenario: Safeguarding inertial measurement unit (IMU) analog sensor supplies against EMP-induced fast-rising transients. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) TVS placed at LDO input to suppress sub-100 ns spikes without affecting precision bias networks. Use Value: Enables uninterrupted gyro/accelerometer operation during simulated nuclear EMP testing (IEC61000-4-22 compliant waveforms). | Use Scenario: Hardening command receiver front-ends in hardened bunkers against conducted surges from grid coupling or lightning strikes. IC Role / Device Role / Timing Role: JANS-qualified TVS deployed in redundant power entry modules to meet DoD TEMPEST and MIL-STD-188-125 surge immunity mandates. Use Value: Delivers guaranteed 1500 W surge handling with full traceability and lot-level radiation test reports-required for nuclear C2 certification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6158US | Same electrical specs but JANTXV qualification (lower screening rigor than JANS); RθJEC = 5.0 °C/W unchanged. | Approved for high-reliability ground systems (e.g., radar shelters) but not spaceflight or nuclear C2. | Select when full JANS radiation test reports and lot traceability are not mandated. |
| 1N6158AUS | Commercial-grade version; same VWM/V(BR)/VC/IPP, but no MIL-PRF-19500/516 qualification or radiation data. | Limited to non-safety-critical industrial controls; RoHS-compliant matte-tin terminations available. | Choose for cost-sensitive prototyping or terrestrial test benches where military screening is unnecessary. |
Compared with JANS1N6158US/TR, JANTXV1N6158US offers reduced qualification cost and lead time but lacks JANS-level radiation assurance, while 1N6158AUS provides identical electrical performance at commercial reliability-making it suitable only for non-mission-critical validation.
Availability
JANS1N6158US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, missile guidance electronics requiring stable component supply with full traceability and long-term obsolescence management.
Supply support for JANS1N6158US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N6138AUS–1N6173AUS family delivers military-qualified TVS protection with hermetic SQ-MELF packaging, targeting radiation-hardened, high-temperature, and ultra-long-life applications in space and strategic systems.
FAQ
What is the maximum clamping voltage of JANS1N6158US/TR under a 10/1000 µs surge?
The JANS1N6158US/TR clamps to a maximum of 64.6 V when subjected to its rated 23.2 A peak pulse current (IPP) with a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full –55 °C to +175 °C junction temperature range. The clamping voltage directly determines the maximum stress imposed on protected circuitry, making it critical for validating downstream IC survivability in surge events.
Is JANS1N6158US/TR compatible with lead-free reflow soldering processes?
Yes, JANS1N6158US/TR supports lead-free reflow with a maximum solder temperature of 260 °C for 10 seconds, as specified in Microsemi T4-LDS-0278-1 Rev. 2. Its tin/lead-plated copper terminals are qualified for standard Pb-free thermal profiles, though the part itself is not RoHS-compliant due to its JANS-level military construction. For RoHS-compliant alternatives, consider the commercial 1N6158AUS variant.
Does JANS1N6158US/TR require polarity-aware PCB layout?
No, JANS1N6158US/TR is a bidirectional TVS with no polarity marking and symmetric terminal construction. Its SQ-MELF package has identical end caps, allowing placement in either orientation on the PCB. This eliminates orientation errors during automated assembly and simplifies layout for differential or floating bus protection-unlike unidirectional TVS diodes that mandate strict anode/cathode routing.
What is the standby leakage current of JANS1N6158US/TR at its rated standoff voltage?
JANS1N6158US/TR exhibits a maximum standby leakage current (ID) of 5 µA when biased at its rated working standoff voltage of 35.8 V, measured at 25 °C ambient. This ultra-low leakage ensures minimal power loss and avoids loading errors in high-impedance monitoring circuits, such as those found in satellite battery management systems where microamp-level accuracy is essential for state-of-charge estimation.
How does JANS1N6158US/TR achieve radiation hardness?
JANS1N6158US/TR achieves inherent radiation hardness through its silicon avalanche junction design and hard-glass hermetic package, as documented in Microsemi MicroNote 050. It undergoes lot-specific total ionizing dose (TID) testing up to 100 krad(Si) and demonstrates no parametric shift or functional failure-enabling use in LEO satellite power systems without shielding or derating. This radiation tolerance is intrinsic to the process and packaging, not added via external hardening.
JANS1N6158US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 35.8V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 23.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6158US/TR FAQ
1.How can I place an order for JANS1N6158US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6158US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6158US/TR reliable?
The price and inventory of JANS1N6158US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6158US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6158US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6158US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6158US/TR?
JANS1N6158US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6158US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6158US/TR?
For technical support, including JANS1N6158US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6158US/TR requirements.
6.How does Aetrix verify that JANS1N6158US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6158US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6158US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6158US/TR?
All JANS1N6158US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6158US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6158US/TR part is unused and in its original packaging.
Return procedure for JANS1N6158US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6158US/TR Tags
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