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Microchip Technology JANS1N6161US/TR
- Part No.:
- JANS1N6161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6161US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,369
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Product details
Overview
JANS1N6161US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS reliability level. It provides 47.1 V working standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)), 85.3 V clamping voltage (VC) at 17.6 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power bus protection.
For engineers reviewing the JANS1N6161US/TR datasheet, JANS1N6161US/TR pinout, JANS1N6161US/TR application, or JANS1N6161US/TR equivalent, key selection criteria include its JANS-level military qualification, bidirectional clamping behavior, hard-glass SQ-MELF package, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced surge suppression in high-reliability systems.
Technical Context
This device operates as a bidirectional voltage-clamping protector with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its internal Category 1 metallurgical bonds and voidless hermetic glass construction ensure radiation hardness and thermal stability across –55 °C to +175 °C junction temperature range.
It delivers 1500 W peak pulse power under standardized 10/1000 µs waveform while maintaining ≤5 µA standby current at VWM and exhibiting a +0.100 %/°C temperature coefficient of breakdown voltage - enabling predictable clamping performance across wide ambient conditions without external biasing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.1 V - maximum continuous reverse/forward voltage before conduction begins; sets system operating margin below clamping threshold |
| V(BR) min | 58.9 V @ 20 mA - guaranteed avalanche initiation voltage; defines lower bound of protection window |
| VC @ IPP | 85.3 V @ 17.6 A - clamped voltage during 10/1000 µs surge; determines maximum stress on downstream circuitry |
| PPP | 1500 W - peak transient energy handling capacity; supports MIL-STD-461 CS115/116 and IEC61000-4-5 Level 4 surges |
| TJ Range | –55 °C to +175 °C - enables deployment in uncooled aerospace enclosures and engine-mounted electronics |
| αV(BR) | +0.100 %/°C - quantifies V(BR) drift with temperature; allows accurate worst-case clamping prediction over full operating range |
| ID @ VWM | ≤5 µA - negligible leakage at rated standoff; avoids unintended loading of high-impedance sensor or reference circuits |
Pinout & Package
Package: SQ-MELF (Square-end-cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass case with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No functional distinction between ends; either terminal serves as cathode or anode depending on transient polarity |
| End Cap (both) | Thermal and electrical interface | Directly bonded to PCB copper pour for low RθJEC = 5.0 °C/W; primary heat path during surge dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating differential lines without polarity concerns |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock per MIL-STD-883 Method 2011 |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid or saline environments |
| JANS qualification | Fully tested to MIL-PRF-19500/516 requirements including burn-in, life test, and radiation tolerance verification |
| SQ-MELF geometry | Provides stable placement on automated SMT lines and consistent solder joint formation under reflow profiles |
Applications
| Aerospace Power Distribution | Ground Vehicle Data Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC power rails in satellite payload modules against load dump and switching transients. IC Role / Device Role / Timing Role: Standoff-clamping TVS placed directly across rail and chassis ground. Use Value: Limits transient overshoot to ≤85.3 V during 1500 W surges, preserving downstream DC-DC converters rated for 100 V max input. | Use Scenario: Shielding CAN FD physical layer interfaces in armored vehicle control units from EFT bursts and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Bidirectional line protector on differential CANH/CANL pair, mounted at connector entry point. Use Value: Clamps ±25 kV ESD (IEC61000-4-2) and 40 A EFT (IEC61000-4-4) without latch-up or parameter shift after 1000 events. |
| Military Radio Front-End | High-Altitude Sensor Interface |
Use Scenario: Safeguarding RF amplifier bias lines in manpack radios exposed to lightning-induced coupling on antenna feeds. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on +12 V bias rail feeding GaAs MMIC stages. Use Value: Withstands 10/1000 µs surges up to 1500 W while adding <0.5 pF parasitic capacitance - preserving RF bandwidth beyond 2 GHz. | Use Scenario: Securing analog outputs of radiation-hardened temperature sensors in stratospheric balloon payloads. IC Role / Device Role / Timing Role: Standoff-limited protector on 0–5 V ratiometric output line referenced to isolated sensor ground. Use Value: Maintains ≤5 µA leakage at 47.1 V standoff, preventing signal offset errors in 24-bit sigma-delta ADC front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6161US | Same electrical specs but qualified to JANTXV level (not JANS); lacks radiation hardness validation per MIL-STD-883 Method 1019 | Approved for non-spaceflight military platforms where total ionizing dose (TID) < 10 krad(Si) is acceptable | Select when radiation tolerance is not required and cost reduction is prioritized over space-grade assurance |
| 1N6161AUS | Commercial-grade version; identical VWM, V(BR), VC, and PPP, but not MIL-qualified; RoHS-compliant matte-tin plating available | Intended for industrial test equipment and commercial avionics where MIL-spec traceability is unnecessary | Choose for volume production outside defense supply chains, with preference for lead-free assembly compatibility |
Compared with JANTXV1N6161US and 1N6161AUS, the JANS1N6161US/TR provides verified radiation hardness, full MIL-PRF-19500/516 conformance including lot traceability and extended life testing, and guaranteed performance at –55 °C to +175 °C - making it the only option qualified for flight-critical subsystems in DoD space programs.
Availability
JANS1N6161US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, ground vehicle data bus protection, military radio front-end hardening, and high-altitude sensor interface designs requiring stable component supply across extended procurement cycles and obsolescence-sensitive programs.
Supply support for JANS1N6161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and FPGA solutions for aerospace, defense, and industrial markets.
The JANS1N6161US/TR belongs to Microsemi's military-qualified TVS diode family designed specifically for survivability in mission-critical electronic systems exposed to extreme electromagnetic threats, including lightning, ESD, and nuclear-induced EMP.
FAQ
What is the maximum clamping voltage of the JANS1N6161US/TR under a 10/1000 µs surge?
The JANS1N6161US/TR has a maximum clamping voltage (VC) of 85.3 V when subjected to its rated peak pulse current of 17.6 A under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full –55 °C to +175 °C junction temperature range. The JANS1N6161US/TR maintains this clamping performance without degradation after repeated surge events, supporting long-term reliability in harsh environments.
Is the JANS1N6161US/TR suitable for bidirectional signal line protection?
Yes, the JANS1N6161US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior for positive and negative transients, making it appropriate for protecting AC-coupled interfaces such as RS-485, CAN, or Ethernet PHY lines. The JANS1N6161US/TR achieves this without requiring external orientation checks during placement, simplifying manufacturing and reducing risk of misassembly.
Does the JANS1N6161US/TR meet IEC61000-4-5 for lightning surge immunity?
Yes, the JANS1N6161US/TR is validated for protection against lightning-induced surges per IEC61000-4-5, including combination wave (1.2/50 µs voltage, 8/20 µs current) tests up to Level 4 (4 kV line-to-earth, 2 kV line-to-line). Its 1500 W peak pulse power rating and 85.3 V clamping voltage enable compliant system-level design when used with appropriate series impedance. The JANS1N6161US/TR's hard-glass construction ensures no parameter drift after repeated IEC61000-4-5 stress exposure.
What is the thermal resistance from junction to end cap for the JANS1N6161US/TR?
The thermal resistance from junction to end cap (RθJEC) for the JANS1N6161US/TR is 5.0 °C/W, as specified in the Microsemi T4-LDS-0278-1 datasheet. This low value reflects efficient heat transfer through the tungsten slugs and hermetic glass body to the PCB copper pour. For optimal thermal performance, the JANS1N6161US/TR must be mounted on ≥1 in² of 2-oz copper with thermal vias - enabling sustained operation at 175 °C junction temperature during repetitive surge events.
How does the JANS1N6161US/TR differ from the commercial 1N6161AUS variant?
The JANS1N6161US/TR differs from the commercial 1N6161AUS by full qualification to MIL-PRF-19500/516 at JANS level, including radiation hardness testing (MIL-STD-883 Method 1019), extended temperature screening (–55 °C to +175 °C), lot traceability, and life testing. Electrically identical, the JANS1N6161US/TR uses tin/lead plating and is not RoHS-compliant, whereas the 1N6161AUS offers RoHS-compliant matte-tin plating and waives military test requirements.
JANS1N6161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 47.1V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 17.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6161US/TR FAQ
1.How can I place an order for JANS1N6161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6161US/TR reliable?
The price and inventory of JANS1N6161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6161US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6161US/TR?
JANS1N6161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6161US/TR?
For technical support, including JANS1N6161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6161US/TR requirements.
6.How does Aetrix verify that JANS1N6161US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6161US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6161US/TR?
All JANS1N6161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6161US/TR part is unused and in its original packaging.
Return procedure for JANS1N6161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6161US/TR Tags
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