Microchip Technology JANS1N6162US/TR
- Part No.:
- JANS1N6162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6162US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,337
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANS1N6162US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS level for space-grade reliability. It features a 51.7 V working standoff voltage (VWM), 64.6 V minimum breakdown voltage (V(BR)) at 20 mA, 97.1 V clamping voltage (VC) at 15.4 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It is used in radiation-hardened avionics power bus protection.
For engineers reviewing the JANS1N6162US/TR datasheet, JANS1N6162US/TR pinout, JANS1N6162US/TR application, or JANS1N6162US/TR equivalent, key selection criteria include its JANS-level military qualification, bidirectional clamping behavior, 1500 W surge rating, -55°C to +175°C operating range, and SQ-MELF "C" package compatibility with high-reliability PCB assembly.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass hermetic construction uses Category 1 metallurgical bonds and triple-layer passivation to ensure robustness against ESD (IEC61000-4-2), EFT (IEC61000-4-4), and lightning-induced surges (IEC61000-4-5).
Thermal performance is defined by a 5.0 °C/W junction-to-end-cap thermal resistance (RθJEC) and linear derating of off-state power above 150 °C end-cap temperature. The device is non-sensitive to ESD per MIL-STD-750 Method 1020 and inherently radiation-hardened per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51.7 V - Maximum continuous reverse/forward voltage before conduction begins; sets system operating margin below clamping threshold. |
| V(BR) min | 64.6 V @ 20 mA - Minimum voltage at which avalanche breakdown initiates; defines turn-on consistency under transient stress. |
| VC @ IPP | 97.1 V @ 15.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry. |
| PPP | 1500 W - Peak pulse power handling capability; enables protection against high-energy transients like lightning-induced surges. |
| TJ/TSTG | -55°C to +175°C - Full military temperature range; supports operation in extreme environments including spacecraft and jet engine bays. |
| αV(BR) | 0.100 %/°C - Temperature coefficient of breakdown voltage; ensures predictable V(BR) drift over wide thermal excursions. |
Pinout & Package
Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs); terminals are tin/lead plated copper; no polarity marking; weight ≈1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | Identical electrical behavior in either direction; no anode/cathode distinction required in layout or schematic symbol. |
| End Cap (both ends) | Thermal and electrical interface | Serves as primary heat path (RθJEC = 5.0 °C/W) and current return path; requires full-surface solder contact for thermal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| JANS qualification per MIL-PRF-19500/516 | Guarantees screening, testing, and traceability for spaceflight and nuclear-hardened systems. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risks over decades of field operation in vacuum or humid environments. |
| Category 1 metallurgical bonds | Ensures mechanical and thermal stability under severe shock, vibration, and thermal cycling (e.g., launch and re-entry). |
Applications
| Aerospace Power Distribution | Rad-Hard Avionics Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC main bus in satellite power management units from load dump and switching transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed across bus rails to limit voltage excursions to <97.1 V during 1500 W surges. Use Value: Prevents latch-up or burnout in downstream DC-DC converters and telemetry interfaces under MIL-STD-1275E conditions. | Use Scenario: Shielding FPGA I/O banks and ADC reference inputs in radiation-tolerant flight computers. IC Role / Device Role / Timing Role: Standoff-limited transient suppressor mounted directly at connector entry points to shunt ESD/EFT energy before it couples into sensitive logic. Use Value: Maintains signal integrity and prevents bit flips during ground handling and in-orbit particle events due to inherent radiation hardness. |
| Military Vehicle ECUs | Nuclear Instrumentation Systems |
Use Scenario: Safeguarding CAN bus physical layer transceivers in armored vehicle control modules exposed to ignition noise and EMP. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp on differential bus lines, leveraging symmetric V(BR) to preserve common-mode rejection. Use Value: Sustains >100,000 surge cycles without parameter shift-critical for mission-critical vehicle subsystems with no field service access. | Use Scenario: Protecting analog front-ends of neutron/gamma detectors in reactor monitoring systems. IC Role / Device Role / Timing Role: High-temperature-stable TVS on sensor bias rails operating continuously at 150 °C ambient inside containment vessels. Use Value: Delivers guaranteed clamping performance up to +175 °C junction temperature without derating loss-enabling simplified thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6162US | Same electrical specs but qualified to JANTXV level (lower screening rigor than JANS); no radiation hardness documentation provided. | Approved for airborne platforms where full space-grade qualification is not mandated. | Select when cost and lead time are prioritized over TID/radiation assurance. |
| 1N6162AUS | Commercial-grade version; identical VWM/V(BR)/VC/IPP but lacks MIL-PRF-19500/516 qualification and radiation hardening. | Limited to ground-based test equipment or non-safety-critical industrial controls. | Choose only for prototyping or non-mission-critical deployments with full lifecycle traceability waived. |
Compared with JANTXV1N6162US and 1N6162AUS, JANS1N6162US/TR provides verified radiation tolerance, full JANS-level screening, and guaranteed performance across -55°C to +175°C-making it the sole option for flight-critical, long-duration space missions requiring zero failure tolerance.
Availability
JANS1N6162US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, rad-hard avionics bus protection, and nuclear instrumentation systems requiring stable component supply across extended production lifecycles.
Supply support for JANS1N6162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The 1N6138AUS–1N6173AUS series was developed specifically to meet MIL-PRF-19500/516 requirements for hermetic, voidless, bidirectional TVS devices in harsh-environment electronics-emphasizing radiation hardness, thermal resilience, and surge endurance.
FAQ
What does the "JANS" prefix indicate for JANS1N6162US/TR?
The "JANS" prefix certifies that JANS1N6162US/TR is qualified to MIL-PRF-19500/516 at the highest reliability level for space applications. This includes rigorous screening for radiation tolerance (per MicroNote 050), extended temperature operation (-55°C to +175°C), and full traceability of materials and processes-distinct from JAN, JANTX, or JANTXV variants.
Is JANS1N6162US/TR unidirectional or bidirectional, and how does that affect circuit placement?
JANS1N6162US/TR is a bidirectional TVS with no polarity marking. It clamps voltage transients equally in both directions, allowing placement across any two nodes-such as power/ground, differential signal pairs, or floating buses-without orientation constraints. This simplifies layout and eliminates risk of reverse installation.
What is the thermal resistance and mounting requirement for JANS1N6162US/TR?
JANS1N6162US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. Effective heat dissipation requires full-surface solder contact on both end caps to the PCB copper; adhesive-only mounting is not sufficient. Pad layout must follow Microsemi's recommended dimensions (0.205" × 0.310") for mechanical and thermal reliability.
Does JANS1N6162US/TR comply with IEC61000-4-2 and IEC61000-4-5 standards?
Yes-JANS1N6162US/TR provides ESD protection per IEC61000-4-2 and surge immunity per IEC61000-4-5 (select levels), as confirmed in the official datasheet. Its 1500 W peak pulse power (10/1000 µs) and 97.1 V clamping voltage enable compliance with Level 4 ESD (±15 kV air, ±8 kV contact) and Class 3/4 surge waveforms in hardened systems.
Can JANS1N6162US/TR replace commercial 1N6162AUS in existing designs?
JANS1N6162US/TR shares identical electrical parameters (VWM = 51.7 V, V(BR) = 64.6 V, VC = 97.1 V) with 1N6162AUS but adds JANS-level screening, radiation hardness, and hermetic reliability. Physical form factor and soldering profile are identical; however, redesign validation is required for flight use due to differences in qualification scope and traceability-not just drop-in substitution.
JANS1N6162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51.7V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 97.1V
- Current - Peak Pulse (10/1000µs):
- 15.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6162US/TR FAQ
1.How can I place an order for JANS1N6162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6162US/TR reliable?
The price and inventory of JANS1N6162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6162US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6162US/TR?
JANS1N6162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6162US/TR?
For technical support, including JANS1N6162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6162US/TR requirements.
6.How does Aetrix verify that JANS1N6162US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6162US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6162US/TR?
All JANS1N6162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6162US/TR part is unused and in its original packaging.
Return procedure for JANS1N6162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6162US/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

