Microchip Technology JANS1N6163AUS/TR
- Part No.:
- JANS1N6163AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6163AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANS1N6163AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS reliability level. It provides 56.0 V working standoff voltage (VWM), 71.3 V minimum breakdown voltage (V(BR)) at 20 mA, 103.1 V clamping voltage (VC) at 14.5 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in aerospace power bus protection and avionics interface circuits.
For engineers reviewing the JANS1N6163AUS/TR datasheet, JANS1N6163AUS/TR pinout, JANS1N6163AUS/TR application, or JANS1N6163AUS/TR equivalent, key selection criteria include its JANS-level military qualification, bidirectional clamping behavior, 103.1 V VC under 14.5 A surge, -55°C to +175°C operating junction temperature range, and SQ-MELF "C" package compatibility with automated surface-mount assembly.
Technical Context
This device operates as a bidirectional avalanche diode-based TVS, leveraging hard-glass hermetic construction with internal Category 1 metallurgical bonds to ensure radiation hardness and long-term reliability in high-reliability environments. Its clamping action begins at V(BR) ≥71.3 V and limits transient energy to ≤103.1 V across the protected line when subjected to 14.5 A (10/1000 µs).
The JANS1N6163AUS/TR exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.100 %/°C and supports steady-state off-state power dissipation up to 3.0 W at 25 °C ambient, derating linearly to zero at 175 °C junction temperature. Thermal resistance from junction to end cap is 5.0 °C/W, enabling effective heat transfer in constrained board layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 56.0 V - maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin below clamping threshold. |
| V(BR) min | 71.3 V @ 20 mA - guaranteed avalanche onset voltage; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 103.1 V @ 14.5 A - clamped voltage during 10/1000 µs surge; determines maximum stress on downstream circuitry. |
| PPP | 1500 W - peak pulse power rating for 10/1000 µs waveform; quantifies transient energy absorption capability. |
| TJ Range | -55°C to +175°C - operational junction temperature range; supports deployment in extreme environmental conditions. |
| RθJEC | 5.0 °C/W - thermal resistance from junction to end cap; enables direct thermal path design into metal-core PCBs or heatsinks. |
| ID @ VWM | 5 µA - maximum leakage current at rated standoff voltage; ensures minimal standby power loss and signal integrity. |
Pinout & Package
Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs; tin/lead-plated copper terminals; no polarity marking; weight ≈1100 mg).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | No designated anode/cathode; symmetric bidirectional clamping allows placement without orientation constraints. |
| End Cap (both ends) | Thermal and mechanical interface | Direct thermal path to PCB pad or heatsink; requires full-surface solder contact for rated RθJEC = 5.0 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or differential signal lines without polarity concerns. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over decades of field operation in vacuum or humid environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling, shock, and vibration per MIL-STD-883 methods. |
| JANS qualification per MIL-PRF-19500/516 | Validated for use in mission-critical systems requiring zero-failure tolerance, including launch vehicle avionics. |
| 1500 W 10/1000 µs pulse rating | Withstands lightning-induced surges and EFT bursts per IEC61000-4-5 Level 3 and IEC61000-4-4. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protection of 28 V DC main bus against load dump and switching transients in satellite power subsystems. IC Role / Device Role / Timing Role: Bidirectional TVS clamp limiting bus voltage excursions to ≤103.1 V during 14.5 A surges. Use Value: Prevents latch-up or burnout in downstream DC-DC converters and battery management ICs under MIL-STD-1275E Condition B. |
Use Scenario: Surge suppression on ARINC 429 receive inputs exposed to ESD and induced transients in flight control computers. IC Role / Device Role / Timing Role: Fast-response transient clamp placed directly at connector entry point before receiver input stage. Use Value: Maintains signal integrity by limiting transient overvoltage to <103.1 V while adding <0.5 pF capacitance - no data rate degradation. |
| Military Vehicle Electronics | High-Reliability Industrial Control |
Use Scenario: Input protection for 24 V sensor interfaces in tracked vehicle engine control units subject to ISO 7637-2 Pulse 1/2/5a. IC Role / Device Role / Timing Role: Primary front-end TVS absorbing >95% of transient energy before reaching ASIC input protection diodes. Use Value: Extends system MTBF by eliminating repeatable failures caused by repetitive 100 V/50 A transients in harsh EMI environments. |
Use Scenario: Overvoltage protection for analog input channels in nuclear plant safety PLC modules operating continuously at 70 °C ambient. IC Role / Device Role / Timing Role: Standoff-rated TVS maintaining <5 µA leakage at 56 V to avoid measurement offset drift in precision 24-bit ADC front-ends. Use Value: Enables 20+ year field life without recalibration due to stable VWM and αV(BR) = 0.100 %/°C drift control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6163AUS (commercial) | No JANS qualification; same electrical specs but not tested to MIL-PRF-19500/516 screening requirements. | Suitable for non-mission-critical industrial prototypes where cost and lead time outweigh radiation hardness needs. | Select only if JANS-level screening, burn-in, and lot traceability are not required. |
| JANS1N6162AUS/TR | Lower VWM (51.7 V), lower VC (97.1 V), higher IPP (15.4 A); identical package and qualification level. | Better suited for 24–48 V systems needing tighter clamping margin below 100 V. | Choose when system nominal voltage is ≤48 V and clamping headroom must be minimized. |
Compared with JANS1N6163AUS/TR, the commercial 1N6163AUS lacks military screening but offers identical electrical performance, while JANS1N6162AUS/TR trades 4.3 V higher VWM for improved clamping headroom in lower-voltage rails - both require revalidation of surge margin and thermal layout.
Availability
JANS1N6163AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, and military vehicle electronics requiring stable component supply with full traceability and extended lifecycle support.
Supply support for JANS1N6163AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec components.
The JANS1N6163AUS/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in space-qualified and airborne platforms where failure is not an option.
FAQ
What is the maximum clamping voltage of JANS1N6163AUS/TR under standard test conditions?
The JANS1N6163AUS/TR has a maximum clamping voltage (VC) of 103.1 V when subjected to a 10/1000 µs surge current pulse of 14.5 A, as specified in the Microsemi T4-LDS-0278-1 datasheet. This value is measured at the device terminals with proper PCB layout and thermal mounting, and defines the upper voltage limit imposed on protected circuitry during transient events. The JANS1N6163AUS/TR maintains this clamping performance across its full -55°C to +175°C junction temperature range.
Is JANS1N6163AUS/TR compatible with lead-free reflow processes?
JANS1N6163AUS/TR is rated for a maximum solder temperature of 260°C for 10 seconds, making it compatible with standard SnAgCu lead-free reflow profiles. However, its terminations are tin/lead plated per the datasheet, so full RoHS compliance requires the commercial-grade e3-marked variant. The JANS1N6163AUS/TR itself is not RoHS compliant but remains suitable for legacy aerospace assemblies using Pb-based soldering processes.
Does JANS1N6163AUS/TR have polarity markings, and how should it be oriented during placement?
No - JANS1N6163AUS/TR is a bidirectional TVS with no polarity markings, as confirmed in the "MECHANICAL and PACKAGING" section of the datasheet. Its symmetrical construction allows placement in either orientation on the PCB without affecting clamping performance. This eliminates orientation errors during automated placement and simplifies layout for differential or AC-coupled signal lines.
What is the temperature coefficient of breakdown voltage for JANS1N6163AUS/TR?
The temperature coefficient of breakdown voltage (αV(BR)) for JANS1N6163AUS/TR is 0.100 %/°C, meaning its V(BR) increases by approximately 0.071 V per °C rise in junction temperature (based on 71.3 V nominal). This parameter is critical for predicting clamping behavior across wide temperature ranges in aerospace applications, and is verified per MIL-PRF-19500/516 test requirements for the JANS grade.
How does JANS1N6163AUS/TR differ from the non-A suffix version (e.g., JANS1N6163US/TR)?
The "A" suffix in JANS1N6163AUS/TR indicates tighter voltage tolerances: it guarantees minimum V(BR) ≥71.3 V, whereas the non-A version has 5% lower minimum V(BR), 5% higher VC, and 5% lower IPP. This makes JANS1N6163AUS/TR more predictable in clamping threshold and energy handling - essential for deterministic protection design in safety-critical systems where margin analysis must be precise.
JANS1N6163AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 56V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103.1V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6163AUS/TR FAQ
1.How can I place an order for JANS1N6163AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6163AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6163AUS/TR reliable?
The price and inventory of JANS1N6163AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6163AUS/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6163AUS/TR?
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JANS1N6163AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6163AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6163AUS/TR?
For technical support, including JANS1N6163AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6163AUS/TR requirements.
6.How does Aetrix verify that JANS1N6163AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6163AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6163AUS/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6163AUS/TR?
All JANS1N6163AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6163AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6163AUS/TR part is unused and in its original packaging.
Return procedure for JANS1N6163AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6163AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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