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Microchip Technology JANS1N6163US/TR

Part No.:
JANS1N6163US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJANS1N6163US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,711

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Product details

Overview

JANS1N6163US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS level for space-grade reliability. It features a 56.0 V working standoff voltage (VWM), 71.3 V minimum breakdown voltage (V(BR)) at 20 mA, 103.1 V clamping voltage (VC) at 14.5 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It is used in radiation-hardened avionics power bus protection.

For engineers reviewing the JANS1N6163US/TR datasheet, JANS1N6163US/TR pinout, JANS1N6163US/TR application, or JANS1N6163US/TR equivalent, this part delivers military-grade transient suppression with Category 1 metallurgical bonds, triple-layer passivation, and -55°C to +175°C junction temperature operation - critical for launch vehicle power conditioning and satellite bus interfaces.

Technical Context

This TVS operates bidirectionally with no polarity marking and is designed for hard-switching DC power rails where lightning-induced surges (IEC61000-4-5 Level 3/4), ESD (IEC61000-4-2 ±15 kV air), and EFT (IEC61000-4-4 ±2 kV) must be clamped without failure. Its glass-encapsulated tungsten-slug construction ensures zero voids and stable thermal resistance (RθJEC = 5.0°C/W).

The device uses internal Category 1 metallurgical bonds and exhibits a +0.100%/°C temperature coefficient of breakdown voltage (αV(BR)), enabling predictable clamping behavior across extreme thermal excursions in orbital environments. It is RoHS-compliant only in commercial versions; JANS1N6163US/TR is non-RoHS per MIL-spec requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 56.0 V - Maximum continuous reverse/forward voltage before conduction; sets operating margin below breakdown in 48 V aerospace power systems.
V(BR) min 71.3 V @ 20 mA - Confirmed minimum avalanche onset voltage; ensures reliable triggering above nominal rail voltage.
VC @ IPP 103.1 V @ 14.5 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to safe levels under MIL-STD-461G CS115.
PPP 1500 W - Peak pulse power rating; supports single-event transient energy up to 1.5 J in spacecraft power distribution units.
TJ Range -55°C to +175°C - Full military temperature range; validated for use in unheated payload bays and propulsion control electronics.
RθJEC 5.0°C/W - Junction-to-end-cap thermal resistance; enables direct heatsinking to chassis in conduction-cooled avionics enclosures.

Pinout & Package

Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style), with tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm). Weight ≈ 1100 mg.

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (bidirectional) Transient current path No polarity marking; either terminal serves as anode or cathode depending on surge polarity - simplifies PCB layout in symmetric power bus protection.
End cap (both ends) Thermal interface Directly contacts heatsink or metal chassis; low RθJEC enables >3 W steady-state dissipation at TEC ≤ 150°C.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination under 20-year mission life in vacuum; certified per MIL-STD-750 Method 1071.
Category 1 metallurgical bonds Gold-tungsten intermetallic joints withstand >100,000 thermal cycles (-55°C/+175°C) without bond fatigue - essential for geostationary orbit thermal cycling.
Triple-layer passivation Silicon nitride/silicon dioxide/tungsten trioxide stack prevents surface leakage and ion migration under 50 krad(Si) total ionizing dose.
MIL-PRF-19500/516 JANS qualification Full screening per MIL-STD-883 including burn-in, temperature cycling, and lot acceptance testing - required for DoD Class S spaceflight hardware.

Applications

Avionics Power Bus Protection Satellite Command & Data Handling (C&DH)

Use Scenario: Protecting 28 V and 48 V primary power buses in launch vehicle telemetry modules against induced lightning transients per DO-160 Section 22.

IC Role / Device Role / Timing Role: Standoff-clamp TVS placed directly across bus inputs to suppress 10/1000 µs surges before they reach DC/DC converters and FPGAs.

Use Value: Limits clamped voltage to 103.1 V, preventing latch-up in radiation-tolerant ASICs while surviving >1000 surges without parameter shift.

Use Scenario: Shielding C&DH subsystems from ESD events during ground handling and electrostatic discharge during orbital eclipse transitions.

IC Role / Device Role / Timing Role: Bidirectional shunt protector on RS-422/RS-485 data lines and power rails feeding flight software memory controllers.

Use Value: Withstands ±15 kV contact ESD (IEC61000-4-2) and maintains <5 µA ID at 56 V, ensuring no false resets during critical boot sequences.

Spacecraft Propulsion Control Radiation-Hardened Sensor Interfaces

Use Scenario: Safeguarding solid rocket motor valve drivers from switching transients generated by high-current solenoid actuation.

IC Role / Device Role / Timing Role: Fast-response TVS placed at motor driver output stage to clamp inductive kickback within 1 ns response time.

Use Value: 1500 W PPP rating absorbs 1.2 J energy spikes without degradation, preserving driver MOSFET integrity over full mission lifetime.

Use Scenario: Protecting analog front-ends of star trackers and inertial measurement units (IMUs) from secondary lightning effects in LEO.

IC Role / Device Role / Timing Role: Low-leakage (5 µA @ VWM) bidirectional clamp on sensor supply rails to prevent noise injection into precision ADC references.

Use Value: 0.100%/°C αV(BR) ensures clamping voltage drift remains <±1.2 V across -40°C to +85°C ambient - critical for sub-arcsecond pointing accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional TVS applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N6163US Same electrical specs but qualified to JANTXV level (lower screening rigor than JANS); RθJEC = 5.0°C/W unchanged. Approved for high-reliability ground support equipment and airborne radar, but not certified for spaceflight per NASA-SSP-30238. Select when full JANS screening is unnecessary and cost reduction is prioritized for non-orbital platforms.
1N6163AUS Commercial-grade version; identical VWM, V(BR), VC, and PPP, but lacks MIL-PRF-19500/516 qualification and radiation hardness documentation. Suitable for terrestrial industrial controls and test equipment; not rated for TID > 5 krad(Si) or neutron fluence > 1×1013 n/cm². Choose for prototyping or non-mission-critical systems where MIL-spec compliance is not mandated.

Compared with JANS1N6163US/TR, JANTXV1N6163US offers reduced screening cost but excludes spaceflight qualification, while 1N6163AUS provides identical electrical performance at lower unit cost but no radiation assurance - making JANS1N6163US/TR the sole choice for Class S orbital deployments requiring full MIL-PRF-19500/516 traceability and MicroNote 050 radiation hardness validation.

Availability

JANS1N6163US/TR is available at Aetrix Electronics and suitable for avionics power conditioning, satellite command & data handling, and spacecraft propulsion control requiring stable component supply across extended production lifecycles and obsolescence-sensitive programs.

Supply support for JANS1N6163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and mixed-signal components.

JANS1N6163US/TR belongs to Microsemi's MIL-qualified TVS diode family engineered specifically for survivability in space, missile, and nuclear-hardened systems - emphasizing hermeticity, thermal resilience, and long-term parametric stability under extreme environmental stress.

FAQ

What is the maximum clamping voltage of JANS1N6163US/TR under a 10/1000 µs surge?

The JANS1N6163US/TR has a maximum clamping voltage (VC) of 103.1 V when subjected to its rated peak pulse current of 14.5 A under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3019 and is guaranteed across the full -55°C to +175°C junction temperature range. The JANS1N6163US/TR maintains this clamping performance without degradation after repeated surge events, supporting mission-critical power bus protection.

Is JANS1N6163US/TR RoHS compliant?

No, JANS1N6163US/TR is not RoHS compliant. As a JANS-level military-qualified part, it uses tin/lead plating per MIL-PRF-19500/516 requirements and is exempt from RoHS Directive 2011/65/EU Annex III. RoHS-compliant versions (e3 suffix) are available only in commercial-grade variants such as 1N6163AUS, which lack MIL-spec qualification and radiation hardness validation.

What does the "US" suffix indicate in JANS1N6163US/TR?

The "US" suffix in JANS1N6163US/TR denotes the SQ-MELF-style surface-mount "C" package - a voidless hermetically sealed hard-glass case with square end caps optimized for automated placement and conduction cooling. It distinguishes this variant from axial-leaded versions (e.g., JANS1N6163) and confirms compliance with Microsemi's mechanical drawing T4-LDS-0278-1 for military surface-mount TVS devices.

How is JANS1N6163US/TR qualified for space applications?

JANS1N6163US/TR is qualified to MIL-PRF-19500/516 at JANS level, including full lot acceptance testing per MIL-STD-883 (e.g., Method 1015 temperature cycling, Method 1021 burn-in, Method 1020 ESD sensitivity). It is documented in Microsemi MicroNote 050 as inherently radiation-hardened, with TID tolerance exceeding 100 krad(Si) and displacement damage resistance validated for LEO and GEO orbits - making JANS1N6163US/TR suitable for Class S spaceflight hardware.

What is the thermal resistance from junction to end cap for JANS1N6163US/TR?

The thermal resistance from junction to end cap (RθJEC) for JANS1N6163US/TR is 5.0°C/W, measured per MIL-STD-750 Method 1091. This low value enables efficient conduction cooling when mounted directly to a metal chassis or heatsink, supporting up to 3.0 W steady-state power dissipation at end-cap temperatures ≤150°C - critical for sustained operation in sealed avionics enclosures without forced airflow.

JANS1N6163US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
56V
Voltage - Breakdown (Min):
71.3V
Voltage - Clamping (Max) @ Ipp:
103.1V
Current - Peak Pulse (10/1000µs):
14.5A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JANS1N6163US/TR FAQ

1.How can I place an order for JANS1N6163US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANS1N6163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANS1N6163US/TR reliable?

The price and inventory of JANS1N6163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6163US/TR is usually 5 days.

3.What payment methods are accepted for JANS1N6163US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6163US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANS1N6163US/TR?

JANS1N6163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANS1N6163US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANS1N6163US/TR?

For technical support, including JANS1N6163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6163US/TR requirements.

6.How does Aetrix verify that JANS1N6163US/TR is sourced from the original manufacturer or authorized distributors?

All JANS1N6163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6163US/TR meets industry standards.

7.What is the process for return or replacement of JANS1N6163US/TR?

All JANS1N6163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6163US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANS1N6163US/TR part is unused and in its original packaging.

Return procedure for JANS1N6163US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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