My Inquiry
My Account
Microchip Technology JANS1N6165US/TR
- Part No.:
- JANS1N6165US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6165US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,372
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANS1N6165US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS reliability level. It features a 69.2 V working peak standoff voltage (VWM), 125.1 V clamping voltage (VC) at 12 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in high-reliability military avionics power rail protection.
For engineers reviewing the JANS1N6165US/TR datasheet, JANS1N6165US/TR pinout, JANS1N6165US/TR application, or JANS1N6165US/TR equivalent, key selection criteria include its JANS-level qualification, bidirectional surge capability, hard-glass SQ-MELF package robustness, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced transients.
Technical Context
This device operates as a bidirectional clamping TVS diode with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its internal Category 1 metallurgical bonds and voidless hermetic glass construction ensure survivability under thermal cycling, radiation exposure, and high-energy transients per MIL-STD-750 and MicroNote 050.
It delivers 1500 W peak pulse power at 25 °C with linear derating above 150 °C junction temperature, and maintains ≤5 µA standby current at rated VWM. The 0.100 %/°C temperature coefficient of breakdown voltage ensures stable clamping performance across –55 °C to +175 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 69.2 V - maximum continuous dc/repetitive peak voltage the device blocks without conduction |
| V(BR) min | 86.5 V @ 15 mA - guaranteed minimum avalanche breakdown voltage under specified test current |
| VC @ IPP | 125.1 V @ 12 A - clamped voltage during 10/1000 µs surge, defining worst-case downstream overvoltage |
| PPP | 1500 W - peak transient energy absorption capacity for standardized lightning-like pulse |
| ID @ VWM | 5 µA - leakage current at rated standoff voltage, critical for low-power sensor rail integrity |
| TJ Range | –55 °C to +175 °C - full military temperature range supported by hermetic glass package |
| αV(BR) | 0.100 %/°C - predictable drift in breakdown voltage with temperature, enabling accurate system margining |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass case with tungsten slugs and tin/lead-plated copper terminals. Weight ≈1100 mg. Dimensions per Microsemi T4-LDS-0278-1 Rev. 2: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetric terminals enable identical clamping in either direction |
| End cap (both ends) | Current-carrying terminal | Full-surface contact area supports high surge current conduction and thermal dissipation via PCB pads |
Key Features
| Feature | Design Value |
|---|---|
| JANS qualification per MIL-PRF-19500/516 | Guaranteed screening, testing, and traceability for space- and mission-critical systems |
| Voidless hermetic glass package | Eliminates moisture ingress and bond degradation over decades of field operation |
| Category 1 metallurgical bonds | High-strength internal interconnects resistant to thermal shock and mechanical stress |
| IEC61000-4-2/4-4/4-5 compliance | Validated protection against ESD (±15 kV air), fast transients (4 kV), and lightning surges (1 kV line-to-line) |
| Non-sensitive to ESD (MIL-STD-750 Method 1020) | Safe handling without special ESD controls during assembly and rework |
Applications
| Aerospace Power Distribution | Military Vehicle Data Buses |
|---|---|
Use Scenario: Protection of 28 V DC primary bus in satellite power conditioning units against load dump and switching transients. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed directly across bus rails to limit voltage excursions to <125.1 V during 1500 W surges. Use Value: Prevents latch-up or destruction of downstream DC-DC converters and FPGAs under MIL-STD-1275B Condition C pulses. |
Use Scenario: Surge suppression on RS-485/RS-422 data lines in armored vehicle command-and-control subsystems. IC Role / Device Role / Timing Role: Low-capacitance bidirectional TVS shunting induced transients before they reach isolated transceivers. Use Value: Maintains signal integrity during EMP events while surviving repeated 10/1000 µs surges per IEC61000-4-5 Level 4. |
| Avionics Sensor Interfaces | Nuclear Instrumentation Systems |
Use Scenario: Input protection for pressure and temperature sensors connected to flight control computers. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 69.2 V) guarding analog front-end inputs against induced coupling from nearby actuators. Use Value: Ensures sub-5 µA leakage preserves microvolt-level sensor accuracy while clamping >100 V transients within 1 ns response time. |
Use Scenario: Front-end protection of radiation-hardened ADCs and signal conditioners in reactor monitoring systems. IC Role / Device Role / Timing Role: JANS-qualified TVS providing fail-safe overvoltage limiting in environments with total ionizing dose >100 krad(Si). Use Value: Inherent radiation hardness (per MicroNote 050) eliminates need for additional shielding or derating in gamma-rich zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6165AUS | Commercial-grade version; same electrical specs but no MIL-PRF-19500/516 qualification or JANS screening | Lacks radiation hardness validation and extended temperature screening; unsuitable for space or nuclear use | Select only for non-mission-critical industrial prototypes where cost and lead time outweigh reliability requirements |
| JANTXV1N6165US/TR | Same die and package, but qualified to JANTXV level - includes burn-in, life test, and tighter parametric limits | Higher screening rigor enables use in Class H (high-reliability) ground systems where JANS is overqualified | Prefer when full JANS documentation burden is unnecessary but extended life test data is required for DO-254 compliance |
Compared with JANS1N6165US/TR, 1N6165AUS offers identical clamping performance at lower cost but no military qualification, while JANTXV1N6165US/TR provides enhanced screening depth without changing footprint or electrical behavior - enabling tiered reliability deployment across program phases.
Availability
JANS1N6165US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle data buses, avionics sensor interfaces, and nuclear instrumentation systems requiring stable component supply with full traceability and long-term obsolescence management.
Supply support for JANS1N6165US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JANS1N6165US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in harsh-environment platforms where failure is not an option - including launch vehicles, radar systems, and secure communications equipment.
FAQ
What is the clamping voltage of JANS1N6165US/TR under a 10/1000 µs surge?
The JANS1N6165US/TR has a maximum clamping voltage (VC) of 125.1 V when subjected to a 12 A peak pulse current (IPP) with a 10/1000 µs waveform. This value is measured per standard test conditions defined in MIL-PRF-19500/516 and is guaranteed across the full –55 °C to +175 °C operating temperature range. The JANS1N6165US/TR maintains this clamping performance due to its hard-glass construction and Category 1 metallurgical bonds.
Is JANS1N6165US/TR RoHS compliant?
No, JANS1N6165US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants such as 1N6165AUS. The JANS1N6165US/TR uses tin/lead plating on copper terminals and is manufactured to meet MIL-PRF-19500/516 requirements, which permit Pb-containing finishes for high-reliability applications.
What package type does JANS1N6165US/TR use, and is it compatible with standard SMT reflow?
JANS1N6165US/TR uses the SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) surface-mount package. It is compatible with standard SnPb reflow profiles, with a maximum solder temperature of 260 °C for 10 seconds. The package dimensions (BD: 0.183–0.202 in, BL: 0.205–0.245 in) and pad layout are documented in Microsemi T4-LDS-0278-1 Rev. 2, and the JANS1N6165US/TR requires no special placement tooling due to its symmetrical geometry and center-of-mass stability.
How does JANS1N6165US/TR differ from the non-A suffix version like JANS1N6165US/TR?
The "A" suffix in JANS1N6165US/TR denotes tighter voltage tolerances: minimum breakdown voltage is 86.5 V (vs. 5% lower for non-A), clamping voltage is 125.1 V (vs. 5% higher for non-A), and peak pulse current is 12 A (vs. 5% lower for non-A). These differences are defined in the nomenclature section of T4-LDS-0278-1 Rev. 2. The JANS1N6165US/TR is the A-version and therefore provides more precise and robust surge performance than non-A variants.
Can JANS1N6165US/TR be used in bidirectional AC signal lines?
Yes, JANS1N6165US/TR is inherently bidirectional and has no polarity marking, making it suitable for protecting AC-coupled signal paths such as MIL-STD-1553 buses or isolated RS-485 differential pairs. Its symmetrical V–I characteristics ensure equal clamping magnitude in both directions, and its 69.2 V working standoff voltage allows safe operation on signals with peak-to-peak amplitudes up to ~98 V. The JANS1N6165US/TR achieves this without external biasing or orientation constraints.
JANS1N6165US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6165US/TR FAQ
1.How can I place an order for JANS1N6165US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6165US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6165US/TR reliable?
The price and inventory of JANS1N6165US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6165US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6165US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6165US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6165US/TR?
JANS1N6165US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6165US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6165US/TR?
For technical support, including JANS1N6165US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6165US/TR requirements.
6.How does Aetrix verify that JANS1N6165US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6165US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6165US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6165US/TR?
All JANS1N6165US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6165US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6165US/TR part is unused and in its original packaging.
Return procedure for JANS1N6165US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6165US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
