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Microchip Technology JANS1N6167US/TR
- Part No.:
- JANS1N6167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6167US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,731
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Product details
Overview
JANS1N6167US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS reliability level. It provides 86.6 V working standoff voltage (VWM), 104.5 V minimum breakdown voltage (V(BR)) at 12 mA, 151.3 V clamping voltage (VC) at 9.9 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in high-reliability military avionics power bus protection.
For engineers reviewing the JANS1N6167US/TR datasheet, JANS1N6167US/TR pinout, JANS1N6167US/TR application, or JANS1N6167US/TR equivalent, key selection criteria include its JANS-level radiation hardness, Category 1 metallurgical bonds, 175 °C max junction temperature, and SQ-MELF package compatibility with automated surface-mount assembly under MIL-STD-202 test conditions.
Technical Context
This device operates as a bidirectional voltage-clamping protector with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass construction and tungsten slug terminations enable stable thermal resistance (RθJEC = 5.0 °C/W) and immunity to ESD per MIL-STD-750 Method 1020.
The JANS1N6167US/TR delivers IEC61000-4-2 ESD and IEC61000-4-4 EFT protection while meeting lightning-induced surge requirements per select IEC61000-4-5 levels. Its 0.100 %/°C temperature coefficient of V(BR) ensures predictable clamping behavior across –55 °C to +175 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 86.6 V - maximum continuous reverse/forward voltage before conduction; sets system operating margin below clamping threshold |
| V(BR) min | 104.5 V @ 12 mA - guaranteed avalanche onset voltage; defines minimum overvoltage trigger point |
| VC @ IPP | 151.3 V @ 9.9 A - clamped voltage during 10/1000 µs transient; determines protected circuit's maximum stress exposure |
| PPP | 1500 W - peak impulse power handling capability; enables robust defense against MIL-STD-461 CS115 surges |
| TJ range | –55 °C to +175 °C - extended operational envelope supporting aerospace and downhole electronics |
| RθJEC | 5.0 °C/W - low thermal resistance from junction to end cap; supports high-power pulse dissipation without derating |
| ID @ VWM | 5 µA - ultra-low leakage at rated standoff; prevents signal integrity degradation in high-impedance sensing paths |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; tin/lead-plated copper terminals; weight ≈ 1100 mg; compliant with EIA-481-B tape-and-reel standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetric conduction in either direction; requires no orientation check during placement |
| End Cap (both ends) | Thermal and electrical interface | Direct junction-to-mounting-surface heat path; enables 5.0 °C/W RθJEC and eliminates need for thermal vias |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bonds | Internal wire bonds qualified to MIL-STD-883 method 2011.9; ensures >100,000 thermal cycles reliability in flight-critical systems |
| Voidless hermetic seal | Hard-glass enclosure with zero internal voids; prevents moisture ingress and parametric drift over 20+ year service life |
| JANS qualification | Fully tested to MIL-PRF-19500/516 Level JANS; includes radiation hardness per MicroNote 050 and lot traceability to wafer level |
| Triple-layer passivation | Silicon nitride/silicon dioxide stack over junction; suppresses surface leakage and enhances stability under ionizing radiation |
Applications
| Aerospace Power Distribution | Military Vehicle Data Bus Protection |
|---|---|
Use Scenario: 28 V DC primary bus in fighter aircraft avionics bays exposed to load dump and EMP transients. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed across bus rails to limit voltage excursions during MIL-STD-704F events. Use Value: 1500 W PPP and 175 °C TJ rating ensure uninterrupted operation during sustained 100 ms surges at +125 °C ambient. |
Use Scenario: CAN FD and MIL-STD-1553B data lines in armored vehicle control modules subjected to ESD and conducted fast transients. IC Role / Device Role / Timing Role: Low-capacitance, bidirectional transient clamp on differential signal pairs without disrupting signal integrity. Use Value: 5 µA ID @ VWM and symmetric clamping preserve common-mode rejection ratio and bit error rate under repeated 8 kV contact ESD. |
| Spacecraft Payload Power Conditioning | Nuclear Facility Sensor Interface |
Use Scenario: DC-DC converter output stage in LEO satellite payloads requiring TID tolerance and single-event burnout immunity. IC Role / Device Role / Timing Role: Secondary-side overvoltage clamp protecting downstream FPGAs and ADCs from regulator fault conditions. Use Value: Inherent radiation hardness (per MicroNote 050) and JANS-level screening eliminate need for additional shielding or redundancy. |
Use Scenario: 4–20 mA loop-powered sensors in reactor containment zones exposed to gamma radiation and thermal cycling. IC Role / Device Role / Timing Role: Standoff voltage limiter on analog input front-end to prevent op-amp saturation during ground potential shifts. Use Value: Stable V(BR) tempco (0.100 %/°C) and –55 °C to +175 °C operation maintain accuracy across 150 °C ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6167US | Same VWM (86.6 V), VC (151.3 V), and PPP (1500 W); qualified to JANTXV level (lower screening rigor than JANS) | Lacks full JANS radiation hardness verification and lot traceability; not approved for Class S spaceflight use | Select when cost sensitivity outweighs requirement for TID > 100 krad(Si) and single-event effect characterization |
| 1N6167AUS | Commercial-grade version; identical electrical specs but unqualified to MIL-PRF-19500; RoHS-compliant matte-tin plating available | Not suitable for environments requiring MIL-spec environmental testing or long-term parametric stability beyond 10 years | Choose for ground-based industrial controls where JANS-level reliability and radiation tolerance are unnecessary |
Compared with JANS1N6167US/TR, JANTXV1N6167US offers reduced qualification cost and lead time but omits radiation hardness validation, while 1N6167AUS sacrifices military screening entirely for RoHS compliance and lower unit price - making JANS1N6167US/TR the sole option for mission-critical airborne and spaceborne deployments.
Availability
JANS1N6167US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle data bus protection, spacecraft payload conditioning, nuclear facility sensor interfaces, and high-reliability industrial control systems requiring stable component supply across extended product lifecycles.
Supply support for JANS1N6167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JANS1N6167US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme electromagnetic environments - including EMP, lightning coupling, and nuclear transient events - with focus on zero-failure field performance.
FAQ
What is the maximum clamping voltage of JANS1N6167US/TR under a 10/1000 µs surge?
The JANS1N6167US/TR has a maximum clamping voltage (VC) of 151.3 V when subjected to a 10/1000 µs waveform at 9.9 A peak pulse current (IPP). This value is measured per MIL-STD-750 Method 3013 and guarantees the protected circuit will not experience voltage stress exceeding this level during standardized surge events. The JANS1N6167US/TR maintains this clamping performance across its full operating temperature range of –55 °C to +175 °C.
Is JANS1N6167US/TR compatible with lead-free reflow soldering processes?
JANS1N6167US/TR uses tin/lead-plated copper terminals and is rated for solder temperature up to 260 °C for 10 seconds, conforming to J-STD-020 moisture sensitivity level 1. While it supports standard SnPb reflow profiles, it is not lead-free process qualified - RoHS-compliant matte-tin plating is only available on commercial-grade 1N6167AUS, not on JANS1N6167US/TR. The JANS1N6167US/TR must be processed using Sn63/Pb37 solder paste and profile.
Does JANS1N6167US/TR require polarity-aware PCB layout?
No - JANS1N6167US/TR is a bidirectional TVS with no polarity marking and symmetrical electrical characteristics in both forward and reverse bias. Its SQ-MELF package has identical end-cap terminals, allowing unrestricted orientation during automated placement. This eliminates risk of misorientation-related field failures and simplifies PCB design for differential bus protection. The JANS1N6167US/TR functions identically regardless of anode/cathode assignment on the board.
How does JANS1N6167US/TR differ from commercial 1N6167AUS in reliability testing?
JANS1N6167US/TR undergoes full MIL-PRF-19500/516 screening including burn-in, temperature cycling, mechanical shock, and radiation hardness assurance per MicroNote 050, with lot traceability to wafer fabrication. Commercial 1N6167AUS receives only basic electrical test and visual inspection. The JANS1N6167US/TR is certified for Class S spaceflight use; 1N6167AUS carries no military qualification and is not approved for safety-critical deployments.
What is the thermal resistance from junction to end cap (RθJEC) for JANS1N6167US/TR?
The JANS1N6167US/TR has a specified thermal resistance of RθJEC = 5.0 °C/W from junction to end cap, measured per MIL-STD-750 Method 1025. This low value enables direct heat transfer from the silicon die to the PCB mounting surface without thermal vias or heatsinks, supporting reliable 1500 W pulse dissipation even at elevated ambient temperatures. This parameter is critical for validating thermal performance in JANS1N6167US/TR-based surge protection designs.
JANS1N6167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 86.6V
- Voltage - Breakdown (Min):
- 104.5V
- Voltage - Clamping (Max) @ Ipp:
- 151.3V
- Current - Peak Pulse (10/1000µs):
- 9.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6167US/TR FAQ
1.How can I place an order for JANS1N6167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6167US/TR reliable?
The price and inventory of JANS1N6167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6167US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6167US/TR?
JANS1N6167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6167US/TR?
For technical support, including JANS1N6167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6167US/TR requirements.
6.How does Aetrix verify that JANS1N6167US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6167US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6167US/TR?
All JANS1N6167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6167US/TR part is unused and in its original packaging.
Return procedure for JANS1N6167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6167US/TR Tags
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