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Microchip Technology JANS1N6169US/TR
- Part No.:
- JANS1N6169US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6169US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,158
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Product details
Overview
JANS1N6169US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANS level for space-grade reliability. It features a 98.8 V working peak standoff voltage (VWM), 123.5 V minimum breakdown voltage (V(BR)) at 10 mA, 178.8 V clamping voltage (VC) at 8.4 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs), deployed in high-reliability avionics power rail protection.
For engineers reviewing the JANS1N6169US/TR datasheet, JANS1N6169US/TR pinout, JANS1N6169US/TR application, or JANS1N6169US/TR equivalent, key selection criteria include its JANS-level radiation-hardened construction, bidirectional clamping behavior, 175 °C max junction temperature, hard-glass SQ-MELF package, and compliance with IEC61000-4-2/4-4/4-5 transient immunity standards.
Technical Context
This device operates as a bidirectional voltage-clamping TVS diode with no polarity marking, designed for symmetric surge suppression on AC lines or unidirectional rails where reverse transients must be blocked. Its Category 1 metallurgical bonds and voidless hermetic glass seal ensure stable parametric performance under thermal cycling, mechanical shock, and ionizing radiation exposure.
The JANS1N6169US/TR delivers 1500 W peak pulse power for 10/1000 µs waveform at 25 °C, with linear derating above 150 °C end-cap temperature to zero at 175 °C. Thermal resistance from junction to end cap is 5.0 °C/W, enabling direct mounting to heat-conductive substrates in conduction-cooled military systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 98.8 V - Maximum continuous DC or repetitive peak voltage before clamping initiates; sets operating margin for 100 V nominal bus protection. |
| V(BR) min | 123.5 V @ 10 mA - Guaranteed minimum breakdown threshold; ensures reliable turn-on above normal operating voltage. |
| VC @ IPP | 178.8 V @ 8.4 A - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream circuitry. |
| PPP | 1500 W - Peak impulse power handling capability; supports lightning-induced surges per IEC61000-4-5 Level 3. |
| TJ/TSTG | –55 to +175 °C - Full military temperature range; validated for operation in satellite payload bays and missile guidance electronics. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal path design without heatsink for low-duty-cycle transients. |
| αV(BR) | 0.105 %/°C - Temperature coefficient of breakdown voltage; allows accurate clamping voltage prediction across operational temperature extremes. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; weight ≈ 1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (Page 7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path terminal | No polarity marking; either end serves as anode or cathode depending on transient polarity-enables single-device protection of AC-coupled or floating nodes. |
| End Cap (both ends) | Thermal and mechanical interface | Directly bonded to PCB copper pour or chassis for conduction cooling; primary thermal path defined by RθJEC = 5.0 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC signal lines, transformer-coupled interfaces, or ungrounded power domains without polarity constraints. |
| JANS qualification per MIL-PRF-19500/516 | Validated for spaceflight use with full lot traceability, burn-in, and radiation hardness per MicroNote 050-no derating required for TID up to 100 krad(Si). |
| Voidless hermetic glass seal | Eliminates internal moisture ingress and interfacial delamination under thermal vacuum cycling-critical for 15+ year orbital mission life. |
| Category 1 metallurgical bonds | Guarantees bond integrity under 20,000 g mechanical shock and 1000 thermal cycles (–55 °C to +125 °C); prevents parametric drift in launch-vibration environments. |
| IEC61000-4-2/4-4/4-5 compliance | Meets ESD ±15 kV contact discharge, EFT ±2 kV burst, and lightning surge Level 3 (1 kV line-earth, 2 kV line-line) without external filtering components. |
Applications
| Avionics Power Bus Protection | Satellite Command & Data Handling |
|---|---|
Use Scenario: Protecting 100 V primary power distribution buses in UAV flight control units against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly across bus inputs to limit transient overvoltage to <180 V. Use Value: Prevents latch-up or gate oxide rupture in downstream DC-DC converters and FPGAs during MIL-STD-461 RS105 events. | Use Scenario: Shielding command receiver front-ends in LEO satellites from electrostatic discharge during antenna deployment and solar array articulation. IC Role / Device Role / Timing Role: Primary ESD shunt on RS-422 differential pairs interfacing with deployable booms. Use Value: Maintains signal integrity through ±15 kV IEC61000-4-2 contact discharge without requiring series impedance or RC filtering. |
| Military Radar Signal Conditioning | Missile Guidance Sensor Interface |
Use Scenario: Safeguarding analog front-ends of phased-array radar receivers exposed to RF energy coupling and EMP transients. IC Role / Device Role / Timing Role: Low-capacitance (<10 pF) bidirectional clamp on IF amplifier inputs. Use Value: Limits voltage excursions to <180 V while preserving small-signal bandwidth up to 1 GHz due to MELF geometry and minimal parasitic inductance. | Use Scenario: Protecting inertial measurement unit (IMU) analog outputs in tactical missiles subjected to pyroshock and radiated RF interference. IC Role / Device Role / Timing Role: Conduction-cooled TVS mounted directly to IMU housing to clamp transients induced by nearby detonators. Use Value: Achieves sub-1 ns response time and survives 100 krad(Si) TID without parameter shift-ensuring navigation continuity post-launch. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6169US | Same electrical specs but qualified to JANTXV level (not JANS); lacks radiation hardness validation per MicroNote 050. | Approved for ground-based military systems only; not cleared for spaceflight or nuclear-hardened platforms. | Select when radiation tolerance is unnecessary and cost reduction is prioritized over full space qualification. |
| 1N6169AUS | Commercial-grade version; identical VWM, V(BR), VC, and PPP-but not MIL-qualified, no lot traceability, and RoHS-compliant matte-tin plating only. | Restricted to non-safety-critical commercial aerospace or industrial test equipment with ambient temperature limits ≤125 °C. | Choose only for prototyping or non-flight hardware where JANS documentation and screening are not contractually mandated. |
Compared with JANTXV1N6169US and 1N6169AUS, the JANS1N6169US/TR provides verified space-grade radiation hardness, full MIL-PRF-19500/516 screening, and guaranteed parametric stability across –55 °C to +175 °C-making it the sole option for mission-critical orbital and strategic defense electronics.
Availability
JANS1N6169US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, satellite command & data handling, military radar signal conditioning, and missile guidance sensor interface requiring stable component supply across extended temperature ranges and radiation environments.
Supply support for JANS1N6169US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-qualified components.
The JANS1N6169US/TR belongs to Microsemi's 1N6138AUS–1N6173AUS TVS family, engineered specifically for fail-safe transient suppression in mission-critical systems where single-point failure is unacceptable-especially in launch vehicles, satellites, and strategic weapon systems.
FAQ
What is the maximum clamping voltage of the JANS1N6169US/TR under a 10/1000 µs surge?
The JANS1N6169US/TR has a maximum clamping voltage (VC) of 178.8 V when subjected to its rated peak pulse current (IPP) of 8.4 A under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3019 and is guaranteed across the full –55 °C to +175 °C junction temperature range. The JANS1N6169US/TR maintains this clamping performance without degradation after multiple surge events, provided thermal limits are respected.
Is the JANS1N6169US/TR suitable for spaceflight applications?
Yes, the JANS1N6169US/TR is explicitly qualified to JANS level per MIL-PRF-19500/516 and documented as inherently radiation-hard per Microsemi MicroNote 050, supporting total ionizing dose (TID) up to 100 krad(Si) without functional failure or parametric shift. Its voidless hermetic seal and Category 1 metallurgical bonds meet NASA EEE-INST-002 requirements for Class S (spaceflight) usage. The JANS1N6169US/TR is routinely used in LEO and GEO satellite power systems.
Does the JANS1N6169US/TR have polarity markings?
No, the JANS1N6169US/TR is a bidirectional TVS diode with no polarity marking, as confirmed in the Mechanical and Packaging section of T4-LDS-0278-1 Rev. 2. Both terminals are functionally identical and serve as interchangeable anode/cathode paths depending on transient polarity. This eliminates orientation errors during automated placement and simplifies layout for AC-coupled or floating circuits-key for robust implementation of the JANS1N6169US/TR in high-density avionics PCBs.
What is the thermal resistance specification for the JANS1N6169US/TR?
The JANS1N6169US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured per MIL-STD-750 Method 1023. This low value enables efficient conduction cooling through direct mounting of either end cap to a thermally conductive surface such as a copper pour or metal chassis. For sustained surge duty cycles, thermal design must ensure end-cap temperature remains ≤150 °C to avoid derating-critical for reliable long-term operation of the JANS1N6169US/TR.
How does the JANS1N6169US/TR differ from the commercial 1N6169AUS variant?
The JANS1N6169US/TR differs from the commercial 1N6169AUS in three critical areas: (1) full MIL-PRF-19500/516 JANS-level screening including lot traceability and burn-in, (2) radiation hardness validation per MicroNote 050, and (3) non-RoHS tin/lead plating for enhanced solder joint reliability. The 1N6169AUS shares identical electrical parameters but lacks space qualification-making the JANS1N6169US/TR mandatory for flight hardware where the JANS1N6169US/TR's proven reliability is contractually required.
JANS1N6169US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 98.8V
- Voltage - Breakdown (Min):
- 123.5V
- Voltage - Clamping (Max) @ Ipp:
- 178.8V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6169US/TR FAQ
1.How can I place an order for JANS1N6169US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6169US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6169US/TR reliable?
The price and inventory of JANS1N6169US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6169US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6169US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6169US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6169US/TR?
JANS1N6169US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6169US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6169US/TR?
For technical support, including JANS1N6169US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6169US/TR requirements.
6.How does Aetrix verify that JANS1N6169US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6169US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6169US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6169US/TR?
All JANS1N6169US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6169US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6169US/TR part is unused and in its original packaging.
Return procedure for JANS1N6169US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6169US/TR Tags
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