My Inquiry
My Account
Microchip Technology JANS1N6173US/TR
- Part No.:
- JANS1N6173US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANS1N6173US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,855
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANS1N6173US/TR from Microsemi is a hermetically sealed, voidless, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 JANS level for space and defense applications. It provides 152 V working standoff voltage (VWM), 273 V clamping voltage (VC) at 5.5 A peak pulse current (IPP), and 1500 W peak pulse power (PPP) for 10/1000 µs waveform.
For engineers reviewing the JANS1N6173US/TR datasheet, JANS1N6173US/TR pinout, JANS1N6173US/TR application, or JANS1N6173US/TR equivalent, this device serves as a high-reliability, radiation-hardened TVS for lightning surge, ESD, and EFT protection in mission-critical avionics, satellite power interfaces, and hardened ground systems.
Technical Context
This JANS-level TVS uses hard-glass construction with internal Category 1 metallurgical bonds and triple-layer passivation to ensure robustness under thermal cycling, mechanical shock, and ionizing radiation per MicroNote 050. Its bidirectional architecture enables symmetric clamping without polarity marking.
It operates across –55 °C to +175 °C junction temperature range, with 5.0 °C/W thermal resistance from junction to end cap (RθJEC) and linear derating above 150 °C. The device meets IEC61000-4-2 (ESD), -4-4 (EFT), and select levels of -4-5 (lightning surge).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 152 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins; defines system operating margin. |
| V(BR) min | 190 V @ 5 mA - Minimum breakdown voltage threshold; ensures reliable turn-on only during overvoltage events. |
| VC @ IPP | 273 V @ 5.5 A - Clamping voltage during 10/1000 µs surge; limits downstream voltage stress to safe levels. |
| PPP | 1500 W - Peak pulse power handling capability; supports high-energy transients without failure. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff; negligible power loss in quiescent operation. |
| αV(BR) | 0.110 %/°C - Temperature coefficient of breakdown voltage; enables predictable performance across wide thermal ranges. |
| TJ/TSTG | –55 to +175 °C - Extended junction/storage temperature range; suitable for extreme environmental deployment. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style) with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm). No polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Both ends function identically; no directional mounting required-enables flexible PCB layout and eliminates orientation errors. |
| End caps | Thermal and electrical interface | Directly conduct heat to PCB pads; low RθJEC = 5.0 °C/W enables effective thermal management in high-power surges. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion-critical for >20-year field life in vacuum or humid environments. |
| Category 1 metallurgical bonds | Ensures bond integrity under 100,000+ thermal cycles and high-G shock; validated per MIL-PRF-19500/516. |
| Bidirectional clamping | Protects AC-coupled or floating signal/power lines without external diode pairing or polarity constraints. |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) and single-event effects per Microsemi MicroNote 050-no shielding or derating needed. |
Applications
| Avionics Power Bus Protection | Satellite Command & Data Handling |
|---|---|
|
Use Scenario: Protecting 28 V DC power distribution networks in military aircraft against load dump, inductive switching, and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS placed across bus rails to clamp transient overvoltages within 1 ns response time. Use Value: Maintains VWM = 152 V margin above nominal bus voltage while limiting VC to 273 V-preserving downstream regulator input ratings. |
Use Scenario: Shielding command receivers and telemetry interfaces on LEO satellites from electrostatic discharge during launch and orbital operations. IC Role / Device Role / Timing Role: Primary front-end transient suppressor on unshielded harnesses exposed to plasma charging events. Use Value: Radiation-hardened construction ensures no parametric shift or latent failure after 100 krad(Si) TID exposure-eliminates requalification. |
| Ground-Based Radar Transmitter Control | Nuclear Facility Sensor Interface |
|
Use Scenario: Safeguarding FPGA-based timing controllers in pulsed radar modulators subjected to fast-rising RF coupling and ground bounce. IC Role / Device Role / Timing Role: Localized clamping at FPGA I/O banks to prevent latch-up from sub-100 ns transients. Use Value: 5.5 A IPP rating sustains repeated 10/1000 µs surges without degradation-validated over 10,000 impulse cycles. |
Use Scenario: Isolating radiation-monitoring sensors in containment zones where maintenance access is restricted and component replacement is prohibitive. IC Role / Device Role / Timing Role: Permanent surge guard on analog sensor signal lines interfacing with hardened PLCs. Use Value: JANS qualification guarantees lot traceability, burn-in, and extended shelf-life-supports 30-year system lifecycle planning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANS1N6172US/TR | Lower VWM = 136.8 V, VC = 245.7 V, IPP = 6.1 A; 171 V min V(BR) | Suitable for 120 V AC-derived DC rails or lower-voltage analog signal paths | Select when system maximum operating voltage is ≤135 V and tighter clamping headroom is required. |
| JANTXV1N6173US/TR | Same electrical specs but qualified to JANTXV level (not JANS); lacks radiation hardness documentation | Acceptable for non-space, high-reliability ground systems where TID tolerance is not mandated | Choose for cost-sensitive defense programs where full JANS radiation testing is not contractually required. |
Compared with JANS1N6173US/TR, JANS1N6172US/TR offers lower clamping energy for mid-range voltage rails, while JANTXV1N6173US/TR reduces qualification cost but omits radiation assurance-making JANS1N6173US/TR the sole choice for TID-critical spaceflight electronics.
Availability
JANS1N6173US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, satellite command & data handling, and nuclear facility sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for JANS1N6173US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
JANS1N6173US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military and space-grade transient suppression where hermeticity, long-term reliability, and radiation tolerance are non-negotiable design requirements.
FAQ
What is the maximum clamping voltage of JANS1N6173US/TR under a 10/1000 µs surge?
The JANS1N6173US/TR has a maximum clamping voltage (VC) of 273 V when subjected to its rated peak pulse current of 5.5 A for a 10/1000 µs waveform. This value is guaranteed per MIL-PRF-19500/516 test conditions and reflects worst-case device behavior across temperature and lot variation-critical for ensuring downstream ICs remain within absolute maximum ratings.
Is JANS1N6173US/TR compatible with lead-free solder reflow processes?
JANS1N6173US/TR is rated for a maximum solder temperature of 260 °C for 10 seconds, aligning with standard lead-free reflow profiles (e.g., JEDEC J-STD-020). However, its tin/lead terminal plating means it is not RoHS-compliant; Microsemi offers RoHS versions only in commercial-grade variants-not JANS-qualified parts like JANS1N6173US/TR.
Does JANS1N6173US/TR require polarity-aware PCB layout?
No-JANS1N6173US/TR is a bidirectional TVS with symmetrical anode/cathode terminals and no polarity marking. Its electrical behavior is identical regardless of orientation, eliminating risk of misplacement during automated assembly and simplifying layout for differential or floating circuits.
How does the radiation hardness of JANS1N6173US/TR compare to commercial TVS diodes?
JANS1N6173US/TR is inherently radiation-hardened per Microsemi MicroNote 050, exhibiting no functional degradation or parametric shift up to 100 krad(Si) TID. Commercial TVS diodes lack this characterization and typically fail catastrophically or exhibit increased leakage beyond 10 krad-making JANS1N6173US/TR mandatory for spacecraft and nuclear instrumentation.
What is the thermal resistance specification for JANS1N6173US/TR, and how does it impact PCB design?
JANS1N6173US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. Since heat transfers primarily through the end caps into the PCB pads, designers must use thermally robust pad layouts-minimum 0.205 in × 0.245 in copper areas with multiple vias-to maintain junction temperature below 175 °C during repeated 1500 W surges.
JANS1N6173US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 152V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 273V
- Current - Peak Pulse (10/1000µs):
- 5.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANS1N6173US/TR FAQ
1.How can I place an order for JANS1N6173US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6173US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6173US/TR reliable?
The price and inventory of JANS1N6173US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6173US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6173US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6173US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6173US/TR?
JANS1N6173US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6173US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6173US/TR?
For technical support, including JANS1N6173US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6173US/TR requirements.
6.How does Aetrix verify that JANS1N6173US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6173US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6173US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6173US/TR?
All JANS1N6173US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6173US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6173US/TR part is unused and in its original packaging.
Return procedure for JANS1N6173US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N6173US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
