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Microchip Technology JANTX1N5632A
- Part No.:
- JANTX1N5632A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
JANTX1N5632A.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:8,556
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Product details
Overview
JANTX1N5632A from Microchip Technology (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor diode in a DO-13 metal package, designed for high-reliability aerospace and military systems. It provides 1500 W peak pulse power handling at 10/1000 µs, clamps transients to ≤13.4 V at 112 A, and operates across –55°C to +175°C - commonly deployed in avionics power rail protection against ESD, EFT, and secondary lightning surges per IEC61000-4-2/4-4/4-5.
For engineers reviewing the JANTX1N5632A datasheet, JANTX1N5632A pinout, JANTX1N5632A application, or JANTX1N5632A equivalent, this page delivers verified electrical specs, military qualification status, DO-13 mechanical interface details, and direct alternatives for surge protection design in harsh-environment electronics.
Technical Context
The JANTX1N5632A functions as a unidirectional avalanche breakdown TVS diode with cathode tied to case, enabling low-inductance grounding in high-speed transient suppression. Its 7.37 V rated standoff voltage (VWM) and 8.19–8.65 V breakdown range (VBR) ensure reliable blocking under nominal 6–7 V DC rails while triggering fast (<100 ps) into clamping mode during overvoltage events.
It delivers 13.4 V maximum clamping voltage (VC) at 112 A peak pulse current (IPP), achieving 1500 W peak pulse power (PPP) with thermal resistance of 50°C/W junction-to-lead. Hermetic DO-13 packaging supports operation up to +175°C ambient and meets MIL-PRF-19500/500 JANTX level requirements for radiation hardness and long-term reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Rated Standoff) | 7.37 V - Blocks normal system voltage up to this level without leakage; selected to exceed 6 V rail by ≥10% margin. |
| VBR @ IBR=1 mA | 8.19–8.65 V - Confirmed avalanche onset range; ensures predictable turn-on before destructive overvoltage. |
| VC @ IPP=112 A | ≤13.4 V - Maximum clamped voltage seen by protected circuit during worst-case 10/1000 µs surge. |
| PPP | 1500 W - Peak power dissipation capability defines surge energy handling limit per IEC61000-4-5 Class 4 (2 Ω source). |
| IPP | 112 A - Peak current survivable at 10/1000 µs waveform; determines minimum series impedance needed for coordination. |
| TJ Range | –55°C to +175°C - Full military temperature range enables use in engine-mounted avionics and downhole tools. |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case with cathode connected to case; enables low-inductance chassis grounding. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked by diode symbol on body. Lead length 25.4–41.3 mm; case diameter 5.46–5.97 mm; weight ≈1.4 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; carries full surge current into device during clamping event. |
| Cathode (Lead 1 / Case) | Clamping reference & ground path | Internally tied to metal case; must be soldered to low-impedance ground plane or chassis for optimal <100 ps response. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power rating | Enables robust protection against IEC61000-4-5 Class 4 (2 Ω source) lightning surges without derating at +25°C. |
| <100 ps response time | Clamps transients before sensitive downstream ICs experience damaging overvoltage - critical for FPGA I/O and ADC front-ends. |
| MIL-PRF-19500/500 JANTX qualified | Validated for military airborne platforms requiring radiation hardness, lot traceability, and extended temperature cycling. |
| Hermetic DO-13 metal package | Eliminates moisture ingress and parameter drift over decades; supports 175°C operation in engine bay or space-grade enclosures. |
| 0.068 %/°C VBR tempco | Predictable voltage shift across temperature; allows stable clamping threshold design from –55°C to +175°C without recalibration. |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
|
Use Scenario: Protecting 28 VDC aircraft bus feeders from load dump and inductive switching spikes in flight control actuators. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed at bus entry point; cathode grounded to airframe to shunt >1 kA transients. Use Value: Prevents latch-up in motor drivers and resets in flight computers by limiting bus voltage to ≤13.4 V during 112 A surges. |
Use Scenario: Shielding analog sensor inputs (e.g., pressure transducers) from ESD and RF-induced noise in cockpit modules. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at connector entry; anode tied to signal line, cathode to shield ground. Use Value: Maintains signal integrity below 10 mV offset error by clamping sub-100 ns ESD events before reaching precision op-amps. |
| Military Vehicle Electronics | Industrial Motor Control |
|
Use Scenario: Safeguarding CAN bus transceivers and microcontrollers in armored vehicle ECUs exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Primary surge arrestor on 12 V supply rail upstream of DC/DC converters; case grounded to chassis. Use Value: Ensures uninterrupted CAN communication during 1500 W transients by holding rail voltage within 7.37–13.4 V window. |
Use Scenario: Protecting gate drivers and feedback circuits in variable-frequency drives subjected to IGBT switching noise and line surges. IC Role / Device Role / Timing Role: Rail clamp on isolated 15 V auxiliary supply feeding optocouplers and bootstrap circuits. Use Value: Avoids false triggering and desaturation faults by suppressing 112 A pulses that would otherwise exceed driver IC absolute max ratings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N5632 | Same DO-13 package and VWM/VC, but wider VBR tolerance (7.38–9.02 V vs. 8.19–8.65 V); no "A" suffix tight tolerance. | Lower production test coverage; not approved for Class 1–4 IEC61000-4-5 with 2 Ω source impedance. | Select JANTX1N5632A when guaranteed 8.19–8.65 V breakdown is required for precise rail margining in safety-critical systems. |
| SMCJ7.0A | Surface-mount SMC package; same VWM=7.0 V, VC=11.2 V @ 108 A; lower thermal resistance (15°C/W) but non-hermetic plastic body. | Not suitable for >125°C ambient or radiation environments; lacks MIL-PRF-19500 qualification and hermetic seal. | Choose SMCJ7.0A only for commercial industrial PCBs where size, cost, and reflow compatibility outweigh military reliability needs. |
Compared with JANTX1N5632 and SMCJ7.0A, the JANTX1N5632A uniquely combines tight 8.19–8.65 V breakdown control, hermetic DO-13 packaging, and full JANTX qualification - making it the sole option for avionics power rail protection requiring guaranteed clamping performance across extreme temperature and radiation conditions.
Availability
JANTX1N5632A is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, and military vehicle electronics requiring stable component supply with full traceability and long-lifecycle support.
Supply support for JANTX1N5632A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product lines, including military-qualified TVS diodes for defense and space applications.
The JANTX1N5632A belongs to Microchip's legacy Microsemi TVS family engineered specifically for mission-critical surge protection in airborne, ground-mobile, and spaceborne systems where hermeticity, radiation tolerance, and MIL-spec compliance are mandatory.
FAQ
What is the maximum clamping voltage of the JANTX1N5632A under standard test conditions?
The JANTX1N5632A has a maximum clamping voltage (VC) of 13.4 V when subjected to its rated 112 A peak pulse current (IPP) using the 10/1000 µs waveform. This value is measured at TA = 25°C and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream components remain within their absolute maximum ratings.
Is the JANTX1N5632A suitable for IEC61000-4-5 Class 4 secondary lightning protection?
Yes, the JANTX1N5632A is explicitly rated for IEC61000-4-5 Class 4 secondary lightning protection with a 2 Ω source impedance, as confirmed in the datasheet's Applications/Benefits section. Its 1500 W peak pulse power and 112 A IPP meet the 42 Ω, 12 Ω, and 2 Ω source impedance requirements for Classes 1–4, making it appropriate for high-energy surge environments in military vehicles and avionics.
How does the DO-13 package of the JANTX1N5632A impact PCB layout and grounding strategy?
The DO-13 package of the JANTX1N5632A features a cathode internally connected to the metal case, requiring direct soldering of the case to a low-inductance ground plane or chassis. This configuration minimizes parasitic inductance and ensures sub-100 ps response - so PCB layout must avoid vias or narrow traces between the case and ground, and maintain short, wide copper pours to preserve clamping speed and effectiveness.
What is the temperature coefficient of breakdown voltage for the JANTX1N5632A?
The JANTX1N5632A has a maximum temperature coefficient of breakdown voltage (αVBR) of 0.068 %/°C, as specified in the Electrical Characteristics table. This linear drift rate allows designers to calculate VBR variation across the full –55°C to +175°C operating range and verify that clamping remains effective at temperature extremes without exceeding downstream IC voltage tolerances.
Does the JANTX1N5632A require derating for continuous power dissipation?
No - the JANTX1N5632A is not intended for continuous DC power dissipation. Its 1 W steady-state rating applies only at lead temperature ≤+125°C and is strictly for thermal management during infrequent surges. The device operates in standby below VWM (7.37 V) with ≤50 µA leakage, and all surge energy is absorbed transiently in avalanche mode; sustained power dissipation will cause thermal runaway.
JANTX1N5632A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 112A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/500
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
JANTX1N5632A FAQ
1.How can I place an order for JANTX1N5632A through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5632A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5632A reliable?
The price and inventory of JANTX1N5632A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5632A is usually 5 days.
3.What payment methods are accepted for JANTX1N5632A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N5632A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N5632A?
JANTX1N5632A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N5632A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N5632A?
For technical support, including JANTX1N5632A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5632A requirements.
6.How does Aetrix verify that JANTX1N5632A is sourced from the original manufacturer or authorized distributors?
All JANTX1N5632A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5632A meets industry standards.
7.What is the process for return or replacement of JANTX1N5632A?
All JANTX1N5632A units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5632A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5632A part is unused and in its original packaging.
Return procedure for JANTX1N5632A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5632A Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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