Microchip Technology JANTX1N5646A

Overview

JANTX1N5646A from Microchip (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor diode in DO-13 metal package, designed for high-reliability aerospace and military applications. It provides 1500 W peak pulse power handling at 10/1000 µs, clamps transients below 49.9 V at 30 A peak pulse current, and operates across –55°C to +175°C with standoff voltage of 30.8 V - used primarily for secondary lightning protection in avionics power rails.

For engineers reviewing the JANTX1N5646A datasheet, JANTX1N5646A pinout, JANTX1N5646A application, or JANTX1N5646A equivalent, this page delivers verified electrical parameters, military qualification status (MIL-PRF-19500/500), DO-13 mechanical interface details, and IEC61000-4-5 Class 4 compliance with 42 Ω source impedance - critical for ESD/EFT-hardened airborne system design.

Technical Context

The JANTX1N5646A functions as a unidirectional avalanche breakdown TVS diode, triggered when reverse voltage exceeds its 32.4–34.2 V breakdown range at 1 mA test current. Its clamping action limits surge-induced voltage to ≤49.9 V during 30 A 10/1000 µs pulses, enabling robust protection of downstream DC-DC converters and sensor interfaces in harsh electromagnetic environments.

Hermetically sealed DO-13 packaging ensures long-term reliability under thermal cycling and humidity exposure, while cathode-to-case polarity and tin-lead plating support MIL-STD-750-compliant soldering. The device exhibits a temperature coefficient of 0.099 %/°C for V(BR), supporting stable performance across extended temperature ranges without derating beyond specified junction-to-lead thermal resistance (50 °C/W).

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked with diode symbol on body. Tin-lead plated external surfaces meet MIL-STD-750 Method 2026 solderability requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with JANTX1N5646A, JANTXV1N5646A adds radiation tolerance validation and tighter V(BR) binning for ultra-high-reliability deployments, while 1N5646A omits all military screening - making JANTX1N5646A the optimal balance of qualified performance and procurement accessibility for defense avionics.

Availability

JANTX1N5646A is available at Aetrix Electronics and suitable for aircraft power distribution, avionics sensor interface, and military vehicle electronics requiring stable component supply with full traceability and long-term obsolescence management.

Supply support for JANTX1N5646A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains legacy military product lines including the JANTX-series TVS diodes originally developed for aerospace and defense use.

The JANTX1N5646A belongs to Microchip's high-reliability discrete protection portfolio, engineered specifically for extreme-environment transient suppression in certified airborne and tactical systems.

FAQ

What is the standoff voltage rating of the JANTX1N5646A?

The JANTX1N5646A has a rated standoff voltage (VWM) of 30.8 V, meaning it remains nonconductive under continuous reverse bias up to this level while drawing less than 5 µA standby current. This value is selected to match standard 28 V aircraft DC systems with margin for ripple and tolerance, ensuring reliable operation without false triggering during normal conditions. The JANTX1N5646A maintains this specification across its full military temperature range.

Does the JANTX1N5646A meet IEC61000-4-5 standards?

Yes, the JANTX1N5646A is validated for IEC61000-4-5 secondary lightning protection up to Class 4 with 42 Ω source impedance, delivering 4 kV line-to-ground surge immunity. Its 1500 W peak pulse power rating and 49.9 V clamping voltage at 30 A ensure compliance without external circuitry. The JANTX1N5646A achieves this performance while retaining full MIL-PRF-19500/500 qualification for defense applications.

How is the cathode terminal configured on the JANTX1N5646A?

The cathode terminal of the JANTX1N5646A is internally connected to the metal case and designated as Lead 1, marked externally with a diode symbol on the DO-13 body. This configuration allows direct low-inductance grounding to chassis or system earth, essential for effective transient energy diversion. The JANTX1N5646A requires mechanical mounting that maintains electrical continuity between case and ground plane to achieve specified clamping performance.

What is the thermal resistance specification for the JANTX1N5646A?

The JANTX1N5646A has a junction-to-lead thermal resistance of 50 °C/W when measured at 0.375 inches (10 mm) from the package body, enabling efficient heat transfer during repetitive surge events. This value assumes proper PCB layout with adequate copper area - for FR4 boards, Microchip specifies 110 °C/W junction-to-ambient with 4 mm² copper pads. The JANTX1N5646A's thermal performance supports sustained operation in high-temperature avionics bays up to +175°C ambient.

Is the JANTX1N5646A radiation hardened?

Yes, the JANTX1N5646A is inherently radiation tolerant per Microsemi MicroNote 050, with no degradation in V(BR), VC, or leakage current after exposure to total ionizing dose (TID) levels typical of low-earth orbit missions. This radiation hardness stems from its DO-13 hermetic metal-glass construction and silicon process, not added shielding. The JANTX1N5646A is routinely deployed in satellite power regulation stages where single-event effects must be mitigated without derating.