Microchip Technology JANTX1N5650A

Overview

JANTX1N5650A from Microchip Technology (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability aerospace and military applications. It features 45.9 V minimum breakdown voltage (V_BR), 43.6 V rated standoff voltage (V_WM), 73.5 V maximum clamping voltage (V_C) at 20.4 A peak pulse current (I_PP), and 1500 W peak pulse power rating at 10/1000 µs waveform.

For engineers reviewing the JANTX1N5650A datasheet, JANTX1N5650A pinout, JANTX1N5650A application, or JANTX1N5650A equivalent, this part delivers radiation-hardened, fast-response surge protection for avionics power rails, MIL-STD-1275 compliant vehicle systems, and IEC61000-4-5 secondary lightning environments with 42 Ω source impedance up to Class 3.

Technical Context

The JANTX1N5650A operates as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its V_BR threshold of 45.9–48.5 V at 1 mA test current. Its clamping action limits transients to ≤73.5 V within <100 ps, enabling protection of downstream 48 V DC systems against ESD (IEC61000-4-2), EFT (IEC61000-4-4), and induced lightning surges.

Rated for -55°C to +175°C operation and qualified per MIL-PRF-19500/500, it uses a welded DO-13 (DO-202AA) hermetic metal-glass package with cathode connected to case-enabling direct chassis grounding and thermal conduction to heatsink or PCB copper. Its 0.102 %/°C temperature coefficient ensures stable V_BR across wide ambient ranges.

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked by diode symbol on body. Case serves as cathode terminal and thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Compared with JANTX1N5650A, JANTXV1N5650A adds radiation assurance and extended environmental screening for space-grade use, while 1N5650A omits all military qualifications-making JANTX1N5650A the optimal balance of proven reliability, cost, and qualification scope for airborne and armored vehicle programs.

Availability

JANTX1N5650A is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle electrical systems, and satellite power conditioning units requiring stable component supply across extended product lifecycles and stringent environmental certifications.

Supply support for JANTX1N5650A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete portfolio, including radiation-hardened and military-qualified components for defense, aerospace, and industrial markets.

The JANTX1N5650A belongs to Microchip's legacy TVS diode family originally developed by Microsemi for mission-critical surge protection-designed specifically to meet MIL-STD-461, MIL-STD-1275, and IEC61000-4-5 requirements in harsh electromagnetic environments.

FAQ

What is the clamping voltage of JANTX1N5650A at its rated peak pulse current?

The JANTX1N5650A has a maximum clamping voltage (V_C) of 73.5 V at 20.4 A peak pulse current (I_PP) under 10/1000 µs waveform conditions. This value is measured per JEDEC standards and guarantees that downstream circuitry sees no more than 73.5 V during a full-rated surge event. The JANTX1N5650A achieves this clamping performance with sub-100 ps response time, making it suitable for protecting sensitive 48 V rail components.

Is JANTX1N5650A qualified to MIL-PRF-19500/500?

Yes, JANTX1N5650A is fully qualified to MIL-PRF-19500/500 as a JANTX-level device, including screening for hermeticity, temperature cycling, and burn-in. This qualification confirms its suitability for military and aerospace applications where reliability under extreme thermal, mechanical, and radiation stress is mandatory. The JANTX1N5650A meets all electrical, mechanical, and environmental requirements defined in the specification for unidirectional TVS diodes.

What package type does JANTX1N5650A use, and how is polarity marked?

JANTX1N5650A uses the DO-13 (DO-202AA) hermetically sealed metal-glass package. Polarity is marked by a diode symbol printed on the body, with the cathode terminal electrically connected to the metal case. Lead 1 (cathode) must be grounded to chassis or PCB ground plane to ensure low-inductance surge discharge and effective thermal conduction. The JANTX1N5650A's case bond enables direct mounting to heatsinks without insulating washers.

Does JANTX1N5650A meet IEC61000-4-5 secondary lightning protection requirements?

Yes, JANTX1N5650A is validated for IEC61000-4-5 secondary lightning protection up to Class 3 with 42 Ω source impedance, supporting 1 kV open-circuit/0.5 kA short-circuit surge levels. Its 1500 W peak pulse power rating and 73.5 V clamping voltage ensure compliance when used with appropriate series impedance. The JANTX1N5650A is widely deployed in avionics and military vehicle systems requiring this exact protection level.

What is the temperature coefficient of breakdown voltage for JANTX1N5650A?

The JANTX1N5650A has a maximum temperature coefficient of breakdown voltage (αV_BR) of 0.102 %/°C, ensuring minimal drift in avalanche threshold across its full -55°C to +175°C operating range. This low coefficient stabilizes protection margins in high-temperature environments such as engine compartments or sealed avionics enclosures. The JANTX1N5650A's predictable V_BR behavior supports robust design margining without derating overhead.