Microchip Technology JANTX1N5659A
- Part No.:
- JANTX1N5659A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
JANTX1N5659A.pdf
- Description:
- TVS DIODE 102VWM 165VC DO13
- Quantity:
- Payment:

- Shipping:

Inventory:6,047
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Product details
Overview
JANTX1N5659A from Microchip (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability military and aerospace applications. It features 108 V minimum breakdown voltage (VBR), 97.2 V rated standoff voltage (VWM), and clamps transients to ≤173 V at 165 A peak pulse current (IPP) under 10/1000 µs waveform - delivering 1500 W peak pulse power for secondary lightning and ESD protection in avionics power rails.
For engineers reviewing the JANTX1N5659A datasheet, JANTX1N5659A pinout, JANTX1N5659A application, or JANTX1N5659A equivalent, this part serves as a MIL-PRF-19500/500 qualified, radiation-hardened TVS for critical DC power line protection where fast response (<100 ps), hermetic sealing, and operation from –55°C to +175°C are mandatory.
Technical Context
The JANTX1N5659A operates as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its 108–114 V VBR range at 1 mA test current. Its clamping action limits surge-induced voltage to ≤173 V during 10/1000 µs transients, enabling robust protection of downstream 100 V-class power converters and sensor interfaces.
Designed for through-hole mounting in DO-13 (DO-202AA) hermetic metal-glass package, it exhibits 50°C/W junction-to-lead thermal resistance and supports forward surge current up to 200 A (8.3 ms half-sine). Polarity is marked with cathode connected to case, ensuring correct orientation in high-voltage rail protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Rated Standoff) | 97.2 V - Maximum continuous reverse voltage before leakage exceeds 5 µA; sets upper limit for protected circuit's nominal DC rail. |
| VBR (Min/Max @ IBR) | 108 V / 114 V @ 1 mA - Confirmed avalanche onset range; ensures predictable turn-on margin above 100 V system voltage. |
| VC @ IPP | 173 V @ 165 A (10/1000 µs) - Peak clamped voltage seen by protected ICs; defines worst-case overvoltage stress during surge events. |
| Peak Pulse Power | 1500 W - Sustained for single 10/1000 µs surges; enables compliance with IEC 61000-4-5 Class 1–4 secondary lightning tests. |
| Response Time | <100 ps - Enables effective suppression of ESD (IEC 61000-4-2) and EFT (IEC 61000-4-4) without signal distortion. |
| Operating Temp Range | –55°C to +175°C - Supports deployment in engine-mounted avionics, downhole tools, and space-grade power systems. |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case with tin-lead plating; meets MIL-STD-750 solderability requirements. |
Pinout & Package
DO-13 (DO-202AA) hermetic metal-glass package with axial leads; cathode terminal electrically bonded to case and marked with diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Input/Line side | Connected to protected power rail; carries full surge current into device during clamping. |
| Cathode (Lead 1 / Case) | Ground/Return side | Internally tied to metal case; must be soldered to low-impedance ground plane for optimal thermal and electrical performance. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Prevents moisture ingress and corrosion in high-humidity, high-vibration environments such as airborne radar systems. |
| MIL-PRF-19500/500 qualification (JANTX) | Guarantees screening for burn-in, temperature cycling, and hermeticity per military reliability standards. |
| Radiation hardness (per MicroNote 050) | Validated tolerance to total ionizing dose (TID) and single-event effects (SEE), suitable for low-earth orbit missions. |
| 1500 W peak pulse power | Enables protection against 42 Ω source impedance IEC 61000-4-5 Class 1 surges up to 1.2 kV/500 A without derating. |
| ≤100 ps response time | Clamps ESD events before logic-level interfaces (e.g., RS-422, ARINC 429 receivers) experience latch-up or damage. |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 100 V DC distribution buses in flight control computers against induced lightning transients and switching spikes from motor drivers. IC Role / Device Role / Timing Role: Unidirectional TVS placed across bus input terminals to clamp surges before they reach DC-DC converters and FPGAs. Use Value: Maintains bus integrity during 10/1000 µs surges up to 165 A while operating continuously at –55°C to +175°C ambient. |
Use Scenario: Safeguarding analog front-ends of inertial measurement units (IMUs) and GPS receivers from ESD and RF-induced transients. IC Role / Device Role / Timing Role: Low-leakage (5 µA @ 97.2 V) standoff protection on sensor supply lines, preserving signal fidelity. Use Value: Sub-100 ps response prevents transient coupling into precision ADC reference paths and amplifier inputs. |
| Military Vehicle Power Systems | Satellite Power Conditioning |
Use Scenario: Shielding 28 V/100 V hybrid power architectures in armored vehicles from load-dump and alternator ripple transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main power feeders, coordinated with upstream fuses and filters. Use Value: Hermetic DO-13 construction withstands shock/vibe profiles per MIL-STD-810G and extended thermal cycling. |
Use Scenario: Securing DC-DC converter inputs in LEO satellite power management units exposed to solar flare-induced surges. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor integrated into redundant power rail protection networks. Use Value: Validated TID tolerance and SEE immunity ensure uninterrupted operation in high-radiation orbital environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5659A | Higher screening level (JANTXV vs JANTX); tighter VBR tolerance (±5% vs ±6%), lower standby current (1 µA vs 5 µA @ VWM). | Required for mission-critical spacecraft subsystems demanding extended lifetime reliability and lower leakage. | Select JANTXV1N5659A when radiation hardness certification and <1 µA leakage at 97.2 V are mandatory. |
| 1N5659A (commercial) | No MIL-PRF-19500 screening; wider VBR tolerance (±6%); not radiation-hardened; operating temp –65°C to +175°C. | Suitable for industrial test equipment or non-flight prototypes where cost and availability outweigh military spec needs. | Choose 1N5659A for bench validation or non-mission hardware where hermeticity and radiation specs are not required. |
Compared with JANTX1N5659A, JANTXV1N5659A offers enhanced screening and tighter parametric control for space-grade use, while 1N5659A provides commercial-grade performance at lower cost and broader availability - all sharing identical DO-13 footprint and core clamping behavior.
Availability
JANTX1N5659A is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface protection, and military vehicle power systems requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for JANTX1N5659A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and maintains legacy military product lines including high-reliability discrete semiconductors and radiation-hardened components.
The JANTX1N5659A belongs to Microchip's legacy TVS diode family originally developed by Microsemi for defense and aerospace applications, emphasizing hermetic packaging, MIL-qualified reliability, and transient suppression in extreme environmental conditions.
FAQ
What is the maximum clamping voltage of JANTX1N5659A under standard surge conditions?
The JANTX1N5659A clamps to a maximum of 173 V when subjected to a 10/1000 µs waveform at its rated peak pulse current of 165 A. This value is measured per JEDEC test conditions and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream components like DC-DC controllers remain within absolute maximum ratings.
Is JANTX1N5659A suitable for ESD protection per IEC 61000-4-2?
Yes, JANTX1N5659A is explicitly validated for ESD protection per IEC 61000-4-2 due to its sub-100 ps response time and low dynamic impedance. The device clamps human-body-model (HBM) and contact-discharge transients before sensitive analog or digital inputs experience overstress - making it appropriate for protecting RS-422 transceivers, CAN interfaces, and FPGA configuration pins in ruggedized systems.
Does JANTX1N5659A require heatsinking in typical applications?
No additional heatsink is required for JANTX1N5659A in standard surge-protection applications because it operates in pulsed mode, not continuous conduction. Its 50°C/W junction-to-lead thermal resistance is sufficient for transient dissipation when mounted with ≥10 mm lead length from PCB body. Continuous DC power dissipation is limited to 1 W at ≤125°C lead temperature - a condition rarely encountered in TVS use cases.
How does the DO-13 package of JANTX1N5659A differ from plastic-packaged TVS diodes?
The DO-13 package of JANTX1N5659A uses a welded metal-glass hermetic seal, unlike plastic axial-leaded equivalents (e.g., 1N6267 series). This eliminates moisture permeation, prevents internal corrosion under thermal cycling, and ensures long-term parameter stability in high-humidity or vacuum environments - essential for airborne and spaceborne deployments where field failure is unacceptable.
What is the polarity marking convention for JANTX1N5659A?
JANTX1N5659A uses cathode-to-case polarity: the metal case and lead marked with the diode symbol (cathode band) are electrically connected. During PCB layout, the case must be soldered to a low-inductance ground plane, and the unmarked lead (anode) connects to the protected line. This configuration ensures lowest possible clamping impedance and optimal thermal path for surge energy dissipation.
JANTX1N5659A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 102V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/500
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
JANTX1N5659A FAQ
1.How can I place an order for JANTX1N5659A through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5659A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5659A reliable?
The price and inventory of JANTX1N5659A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5659A is usually 5 days.
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Once your JANTX1N5659A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N5659A?
For technical support, including JANTX1N5659A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5659A requirements.
6.How does Aetrix verify that JANTX1N5659A is sourced from the original manufacturer or authorized distributors?
All JANTX1N5659A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5659A meets industry standards.
7.What is the process for return or replacement of JANTX1N5659A?
All JANTX1N5659A units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5659A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5659A part is unused and in its original packaging.
Return procedure for JANTX1N5659A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5659A Tags

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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