Microchip Technology JANTX1N6117US/TR
- Part No.:
- JANTX1N6117US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTX1N6117US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:8,476
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Product details
Overview
JANTX1N6117US/TR from Microsemi (now Microchip) is a military-grade 150 V, 5 W transient voltage suppression (TVS) diode in a hermetically sealed DO-213AA (GLASS) package, with bidirectional clamping, 180 V maximum clamping voltage at 23.3 A peak pulse current, and designed for aerospace power rail protection.
For engineers reviewing the JANTX1N6117US/TR datasheet, JANTX1N6117US/TR pinout, JANTX1N6117US/TR application, or JANTX1N6117US/TR equivalent, key selection criteria include peak pulse power rating, clamping voltage consistency under MIL-STD-750D test conditions, hermeticity compliance, and compatibility with high-reliability PCB assembly processes.
Technical Context
This TVS diode operates as a bidirectional shunt protector, responding to voltage transients exceeding its breakdown threshold by entering avalanche conduction within nanoseconds. It meets MIL-PRF-19500/530 requirements for JANTX screening level and is tested per MIL-STD-750D Method 3015 for surge robustness.
Its glass-passivated junction ensures stable leakage current (<5 µA at 120 V) and low capacitance (~100 pF), supporting ESD and lightning-induced surge suppression in analog sensor interfaces and avionics power inputs without signal distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 150 V ±5% - Ensures reliable triggering before downstream circuit damage in 120–140 V nominal systems. |
| Clamping Voltage | 180 V max at 23.3 A - Limits voltage seen by protected ICs during 10/1000 µs surge events. |
| Peak Pulse Power | 5000 W - Sustains single-event surges up to 5 kW without degradation under MIL-STD-750D testing. |
| Leakage Current | <5 µA at 120 V - Minimizes standby power loss and avoids false triggering in high-impedance bias networks. |
| Package | DO-213AA (GLASS) - Hermetic, leadless, 2.2 mm diameter glass body enabling operation from –65°C to +175°C. |
| Standards | MIL-PRF-19500/530, MIL-STD-750D - Required for Class H and Class K space/aerospace qualification programs. |
Pinout & Package
DO-213AA (GLASS) is a two-terminal axial-leadless hermetic glass package with no polarity marking; both terminals are electrically identical and function as symmetrical anode/cathode connections for bidirectional clamping.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode | Bidirectional avalanche junction | Enables clamping of positive and negative transients without orientation dependency on PCB. |
| Cathode/Anode | Bidirectional avalanche junction | Same physical terminal as above; symmetric structure eliminates need for polarity-aware layout. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass package | Eliminates moisture ingress risk and supports long-term reliability in vacuum or high-humidity aerospace environments. |
| JANTX screening level | Includes 100% lot acceptance testing, burn-in, and parametric verification per MIL-PRF-19500. |
| Bidirectional clamping | Protects AC-coupled or floating rails without requiring external polarity management circuitry. |
| Low junction capacitance | ~100 pF enables use in high-frequency analog front-ends without signal integrity impact. |
Applications
| Avionics Power Distribution | Satellite Bus Protection |
|---|---|
Use Scenario: 28 V DC bus in flight control computers exposed to load dump and inductive switching transients. IC Role / Device Role / Timing Role: Primary shunt suppressor at power entry point, clamping surges before they reach DC/DC converters and FPGAs. Use Value: Prevents latch-up and gate oxide damage in downstream silicon by limiting transient voltage to ≤180 V. | Use Scenario: Unregulated 28 V primary bus in LEO satellite power subsystems subject to ESD and solar array arc events. IC Role / Device Role / Timing Role: Front-end transient guard for battery charge controllers and telemetry interface ICs. Use Value: Maintains system uptime by absorbing >5 kW pulses without failure across thermal cycling and radiation exposure. |
| Ground Vehicle Command Systems | Tactical Radio RF Front-End |
Use Scenario: 24 V vehicle-mounted C4I systems experiencing ISO 7637-2 Pulse 1/2/5a transients during engine cranking or alternator load dump. IC Role / Device Role / Timing Role: Secondary overvoltage clamp after bulk filtering, protecting microcontroller I/O and CAN transceivers. Use Value: Meets MIL-STD-1275E compliance with verified clamping performance across –55°C to +125°C operating range. | Use Scenario: Bias supply line feeding GaAs MMIC amplifiers in handheld tactical radios. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor placed directly at amplifier VDD pin. Use Value: Preserves RF gain flatness and noise figure by avoiding parasitic loading from higher-capacitance TVS devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6117US/TR | Higher screening level (JANTXV), tighter parameter tolerances, extended temperature validation to +175°C. | Required for mission-critical spacecraft payloads where zero defect rate is mandated. | Select JANTXV1N6117US/TR when full JANTXV qualification and extended life testing are contractually required. |
| 1N6117US/TR | Commercial-grade version; no MIL screening, wider parameter tolerance (±10%), non-hermetic plastic package. | Suitable only for ground-based industrial equipment with less stringent reliability demands. | Choose 1N6117US/TR for cost-sensitive prototyping or non-military production where hermeticity and JANTX testing are not needed. |
Compared with JANTXV1N6117US/TR, the JANTX1N6117US/TR offers balanced reliability and cost for avionics integration; versus 1N6117US/TR, it delivers verified hermetic performance and MIL-qualified surge immunity essential for deployed defense platforms.
Availability
JANTX1N6117US/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite bus protection, and ground vehicle command systems requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N6117US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N6117US/TR belongs to Microchip's military TVS diode family, engineered specifically to meet MIL-PRF-19500/530 requirements for surge immunity in safety-critical electronic systems.
FAQ
What is the clamping voltage specification for JANTX1N6117US/TR?
The JANTX1N6117US/TR has a maximum clamping voltage of 180 V at 23.3 A peak pulse current (10/1000 µs waveform), measured per MIL-STD-750D Method 3015. This value ensures protected circuits remain below critical voltage thresholds during standardized surge events. The JANTX1N6117US/TR maintains this clamping performance across its full operating temperature range.
Is JANTX1N6117US/TR hermetically sealed?
Yes, the JANTX1N6117US/TR uses a DO-213AA glass package that is fully hermetic, meeting MIL-PRF-19500/530 requirements for moisture resistance and long-term stability in harsh environments. This hermetic seal is integral to the JANTX1N6117US/TR's qualification for aerospace and defense applications where outgassing and corrosion must be eliminated.
What is the operating temperature range of JANTX1N6117US/TR?
The JANTX1N6117US/TR is rated for operation from –65°C to +175°C, validated per MIL-STD-750D thermal cycling and high-temperature life testing. This wide range supports deployment in extreme environments such as jet engine bays, satellite orbital thermal cycles, and desert-deployed tactical systems-core use cases for the JANTX1N6117US/TR.
Does JANTX1N6117US/TR require polarity-specific mounting?
No, the JANTX1N6117US/TR is a bidirectional TVS diode in a symmetrical DO-213AA package with no polarity marking. Both terminals serve identically as anode and cathode depending on transient polarity, allowing flexible PCB placement without orientation constraints-a key design advantage of the JANTX1N6117US/TR in compact or high-density layouts.
How does JANTX1N6117US/TR differ from commercial 1N6117US/TR?
The JANTX1N6117US/TR differs from the commercial 1N6117US/TR in three key ways: it undergoes full JANTX-level screening per MIL-PRF-19500, uses a hermetic glass package instead of plastic, and guarantees tighter parameter tolerances (±5% vs. ±10%). These distinctions make the JANTX1N6117US/TR suitable for mission-critical systems where the 1N6117US/TR would not qualify.
JANTX1N6117US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 22.8V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTX1N6117US/TR FAQ
1.How can I place an order for JANTX1N6117US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6117US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6117US/TR reliable?
The price and inventory of JANTX1N6117US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6117US/TR is usually 5 days.
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Once your JANTX1N6117US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6117US/TR?
For technical support, including JANTX1N6117US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6117US/TR requirements.
6.How does Aetrix verify that JANTX1N6117US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6117US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6117US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6117US/TR?
All JANTX1N6117US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6117US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6117US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6117US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6117US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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