Microchip Technology JANTX1N6140US/TR
- Part No.:
- JANTX1N6140US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6140US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTX1N6140US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF (C) package, rated for 1500 W peak pulse power (10/1000 µs), 6.2 V working standoff voltage (VWM), 7.79 V minimum breakdown voltage (VBR @ 150 mA), and 12.1 V clamping voltage (VC @ 124 A). It serves as primary overvoltage protection in high-reliability avionics power rails.
For engineers reviewing the JANTX1N6140US/TR datasheet, JANTX1N6140US/TR pinout, JANTX1N6140US/TR application, or JANTX1N6140US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 qualification level (JANTX), bidirectional operation, glass-body thermal resistance (5.0 °C/W), IEC61000-4-2/4-4/4-5 compliance, and absence of polarity marking.
Technical Context
This TVS operates bidirectionally with no polarity-its symmetrical silicon avalanche structure enables equal clamping in both directions. It uses Category 1 internal metallurgical bonds and triple-layer passivation to ensure reliability under thermal cycling and radiation exposure per MicroNote 050.
Rated for -55 °C to +175 °C junction temperature, it delivers 1500 W peak pulse power at 25 °C with linear derating above 150 °C case temperature. Its 5.0 °C/W junction-to-end-cap thermal resistance supports stable operation on thermally managed PCBs with controlled copper pour.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.2 V - Maximum continuous DC or repetitive peak voltage applied without conduction; sets upper limit for protected circuit operating voltage. |
| VBR min | 7.79 V @ 150 mA - Minimum voltage at which device enters avalanche breakdown; defines turn-on threshold under surge conditions. |
| VC | 12.1 V @ 124 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capability for standardized 10/1000 µs waveform; critical for lightning-induced transients. |
| IPP | 124 A - Peak pulse current corresponding to VC; used to size series impedance and verify coordination with upstream fuses. |
| TJ/TSTG | -55 °C to +175 °C - Full military-grade operating and storage range; enables deployment in engine bay, radar, and space-qualified systems. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; informs heatsinking requirements when mounted to metal chassis or thermal pads. |
Pinout & Package
Package: SQ-MELF (C) - Voidless hermetically sealed hard-glass body with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Non-polarized terminal pair | No marking; either end functions identically as cathode or anode depending on transient polarity-enables placement without orientation check. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal lines without polarity constraints or external diode pairing. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, vibration, and thermal cycling-required for MIL-PRF-19500/516 JANTX qualification. |
| Triple-layer passivation | Prevents surface leakage and moisture ingress in humid or salt-laden environments, maintaining VWM stability over lifetime. |
| Voidless hermetic seal | Eliminates internal delamination risk during reflow or thermal stress, ensuring long-term parameter stability in mission-critical systems. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in flight control computers against load dump and induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp placed directly at connector entry point before DC-DC converters. Use Value: Limits transient voltage to ≤12.1 V during 124 A surges, preserving input stage MOSFETs and enabling use of lower-voltage-rated gate drivers. |
Use Scenario: Shielding ARINC 429 receivers from ESD events and coupled noise on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Bidirectional shunt protector across differential data lines with no signal distortion during normal operation. Use Value: Withstands ±15 kV contact ESD (IEC61000-4-2) while adding <1 pF capacitance-no data rate degradation on 100 kbps buses. |
| Military Radio Front-End | Ground Vehicle Control Module |
Use Scenario: Safeguarding RF power amplifier bias rails in tactical HF/VHF radios exposed to EMP and antenna coupling. IC Role / Device Role / Timing Role: Fast-response TVS placed between DC supply and PA collector node to clamp nanosecond-scale transients. Use Value: 1500 W PPP rating absorbs multi-kA pulses per IEC61000-4-5 Level 4, preventing latch-up in GaAs MMICs. |
Use Scenario: Protecting CAN FD transceiver power pins in engine control units subjected to ISO 7637-2 pulse 5a (load dump). IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing >100 V transients while remaining non-conductive during 24 V nominal operation. Use Value: 6.2 V VWM ensures zero standby leakage at 24 V system rail; clamps to 12.1 V before transceiver damage threshold. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6140AUS | Commercial-grade version; same electrical specs but not MIL-PRF-19500/516 qualified; RoHS-compliant matte-tin plating available. | Lacks JANTX reliability screening and radiation hardness validation; unsuitable for flight-critical hardware. | Select only for ground-based test equipment or non-safety-critical subsystems where cost and RoHS compliance outweigh qualification needs. |
| JANTXV1N6140US/TR | Higher reliability screening (JANTXV level); tighter parametric limits; validated for extended temperature cycling and burn-in per MIL-PRF-19500/516. | Required for Class H (high-reliability) and space-qualified designs; supports longer mission lifetimes in harsh thermal environments. | Choose when full JANTXV screening-including 100% lot testing and radiation tolerance documentation-is mandated by program spec. |
Compared with JANTX1N6140US/TR, the commercial 1N6140AUS offers identical clamping performance at lower cost but no military qualification, while JANTXV1N6140US/TR adds verified robustness for extended thermal and radiation stress-making it essential for orbital or high-altitude deployments.
Availability
JANTX1N6140US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, and military radio front-end designs requiring stable component supply across long production cycles and obsolescence-sensitive programs.
Supply support for JANTX1N6140US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The JANTX1N6140US/TR belongs to Microsemi's MIL-PRF-19500/516-qualified TVS family, engineered specifically for survivability in electromagnetic threat environments including lightning, ESD, and EMP-targeting systems where failure is not an option.
FAQ
What is the clamping voltage of JANTX1N6140US/TR under a 10/1000 µs surge?
The JANTX1N6140US/TR has a maximum clamping voltage (VC) of 12.1 V when subjected to its rated peak pulse current of 124 A under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The JANTX1N6140US/TR maintains this clamping performance across its full military temperature range when properly mounted.
Is JANTX1N6140US/TR polarity-sensitive during PCB placement?
No, the JANTX1N6140US/TR is a bidirectional TVS with no polarity marking or functional distinction between terminals. Its symmetrical avalanche structure allows mounting in either orientation without affecting clamping behavior or electrical performance. This eliminates orientation verification steps during automated assembly and simplifies layout for differential or AC-coupled nodes. The JANTX1N6140US/TR datasheet explicitly states "No polarity marking for these bidirectional TVSs."
Does JANTX1N6140US/TR meet IEC61000-4-5 for lightning surge immunity?
Yes, the JANTX1N6140US/TR provides protection against secondary effects of lightning per select levels of IEC61000-4-5, as confirmed in Microsemi's official application documentation. Its 1500 W peak pulse power rating and 124 A IPP capability align with Level 3 (2 kV line-to-earth, 1 kV line-to-line) and Level 4 (4 kV line-to-earth, 2 kV line-to-line) test profiles when coordinated with appropriate series impedance. The JANTX1N6140US/TR achieves this without derating at elevated ambient temperatures due to its low RθJEC.
What is the maximum steady-state power dissipation of JANTX1N6140US/TR at 25 °C ambient?
The JANTX1N6140US/TR has a steady-state power dissipation (PD) rating of 3.0 W at TA = 25 °C, as specified in the Absolute Maximum Ratings table. This value assumes adequate PCB copper area and thermal management to maintain junction temperature within limits. At higher ambient temperatures, power must be linearly derated per Figure 4 in the datasheet, reaching zero at TA = 150 °C. The JANTX1N6140US/TR is not intended for continuous power regulation-its design purpose is transient suppression only.
Can JANTX1N6140US/TR be used in RoHS-compliant assemblies?
The JANTX1N6140US/TR itself is not RoHS compliant, as it uses traditional tin/lead plating per MIL-PRF-19500/516 requirements. However, Microsemi offers RoHS-compliant versions (e.g., 1N6140AUS) for commercial applications. For programs requiring both JANTX qualification and lead-free assembly, alternate sourcing or waiver justification is necessary-no RoHS-compliant variant of JANTX1N6140US/TR exists. The JANTX1N6140US/TR remains fully compatible with SnPb reflow profiles up to 260 °C for 10 seconds.
JANTX1N6140US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6.2V
- Voltage - Breakdown (Min):
- 7.79V
- Voltage - Clamping (Max) @ Ipp:
- 12.1V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6140US/TR FAQ
1.How can I place an order for JANTX1N6140US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6140US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6140US/TR reliable?
The price and inventory of JANTX1N6140US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6140US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6140US/TR?
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JANTX1N6140US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6140US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6140US/TR?
For technical support, including JANTX1N6140US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6140US/TR requirements.
6.How does Aetrix verify that JANTX1N6140US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6140US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6140US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6140US/TR?
All JANTX1N6140US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6140US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6140US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6140US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6140US/TR Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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