Microchip Technology JANTX1N6143US/TR
- Part No.:
- JANTX1N6143US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6143US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

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Product details
Overview
JANTX1N6143US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, with 8.4 V working standoff voltage (VWM), 10.45 V minimum breakdown voltage (V(BR)), and 15.6 V clamping voltage (VC) at 96.2 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JANTX1N6143US/TR datasheet, JANTX1N6143US/TR pinout, JANTX1N6143US/TR application, or JANTX1N6143US/TR equivalent, key selection criteria include MIL-PRF-19500/516 qualification level (JANTX), bidirectional surge capability, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced transients.
Technical Context
This TVS operates bidirectionally without polarity marking and uses internal Category 1 metallurgical bonds within a hard-glass, voidless hermetic seal to ensure radiation hardness and reliability under extreme thermal cycling (-55 °C to +175 °C). Its 1500 W peak pulse power rating applies specifically to the 10/1000 µs waveform at 25 °C.
The device exhibits low standby current (20 µA at 8.4 V), a temperature coefficient of breakdown voltage of 0.07 %/°C, and linear derating of off-state power above 150 °C junction temperature - enabling stable operation in high-reliability embedded power interfaces where failure is not tolerable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.4 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin below clamping threshold. |
| V(BR) min | 10.45 V @ 125 mA - guaranteed breakdown onset; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 15.6 V @ 96.2 A - clamped voltage during 10/1000 µs surge; defines worst-case stress on downstream circuitry. |
| PPP | 1500 W - peak transient energy handling capacity; supports MIL-STD-461/DO-160 lightning surge levels. |
| TJ range | -55 °C to +175 °C - extended operational envelope for aerospace and defense electronics. |
| RθJEC | 5.0 °C/W - junction-to-end-cap thermal resistance; enables direct heatsinking via end-cap mounting. |
| ID @ VWM | 20 µA - leakage current at rated standoff; minimizes quiescent power loss in battery-backed systems. |
Pinout & Package
SQ-MELF (Square End-Cap Metal Electrode Leadless Face) package: hermetically sealed voidless hard glass body with tungsten slugs and tin/lead-plated copper terminals; no polarity marking; weight ≈ 1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (BD: 0.183–0.202", BL: 0.205–0.245").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | Both ends function identically; no polarity required - simplifies PCB layout and eliminates orientation errors. |
| End Cap (both ends) | Thermal interface & mechanical anchor | Direct thermal path to PCB pad or heatsink; enables 5.0 °C/W RθJEC performance without additional thermal vias. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional suppression | Protects AC-coupled or floating rails without polarity constraints - essential for MIL-STD-1553B data lines and sensor excitation circuits. |
| Category 1 metallurgical bonds | Eliminates interfacial delamination under thermal shock - validated per MIL-PRF-19500/516 for JANTX reliability level. |
| Voidless hermetic glass seal | Prevents moisture ingress and corrosion in high-humidity environments - critical for airborne radar power supplies. |
| IEC61000-4-2/4-4/4-5 compliance | Meets system-level ESD (±8 kV contact), EFT (±2 kV), and lightning surge (1 kV line-earth) immunity requirements out-of-the-box. |
Applications
| Avionics Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs against load dump and alternator switching transients in flight control computers. IC Role / Device Role / Timing Role: Bidirectional TVS clamp limiting transient voltage to ≤15.6 V during 10/1000 µs surges up to 96.2 A. Use Value: Prevents latch-up or burnout in upstream DC-DC controllers by holding rail voltage within safe SOA limits. | Use Scenario: Surge suppression on CAN FD physical layer lines exposed to ignition noise and EMP in armored vehicle command modules. IC Role / Device Role / Timing Role: Fast-response bidirectional clamp absorbing ±1 kV IEC61000-4-5 common-mode surges without signal distortion. Use Value: Maintains bit integrity at 5 Mbps while surviving repeated 1500 W transients - verified per MIL-STD-461G CS115. |
| Satellite Payload Power Conditioning | Tactical Radio Front-Ends |
Use Scenario: Input protection for radiation-hardened DC-DC converters fed from solar array regulators in LEO missions. IC Role / Device Role / Timing Role: Standoff-rated TVS maintaining ≤20 µA leakage at 8.4 V while clamping 10/1000 µs surges to 15.6 V. Use Value: Enables >15-year mission life by eliminating parametric drift and latent failure modes in vacuum-thermal cycling. | Use Scenario: RF front-end protection against electrostatic discharge during field antenna connection/disconnection in handheld radios. IC Role / Device Role / Timing Role: IEC61000-4-2 Level 4 (±8 kV contact) compliant clamp with <1 ns response time. Use Value: Prevents gate oxide damage in GaN PA stages without degrading S21 or increasing insertion loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6143US/TR | Commercial-grade version; same electrical specs but not MIL-PRF-19500/516 qualified; RoHS-compliant matte-tin plating optional. | Lacks JANTX reliability screening; unsuitable for Class H or space-qualified designs requiring traceable lot testing. | Select only for non-military industrial controls where cost and RoHS compliance outweigh radiation hardness needs. |
| JANTXV1N6143US/TR | Higher reliability screening (JANTXV level); tighter parameter verification; enhanced burn-in and life test protocols per MIL-PRF-19500/516. | Required for flight-critical subsystems (e.g., F-35 EW suite) where single-point failure must be excluded. | Choose when full JANTXV qualification documentation (test reports, lot traceability) is mandated by program spec. |
Compared with JANTX1N6143US/TR, the commercial 1N6143US/TR reduces procurement cost and supports RoHS compliance but forfeits military screening; the JANTXV variant adds qualification rigor for safety-critical deployments but increases lead time and unit cost - selection depends strictly on program-level reliability and audit requirements.
Availability
JANTX1N6143US/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle ECUs, satellite payload power conditioning, and tactical radio front-ends requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N6143US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N6138AUS–1N6173AUS series was designed specifically to meet MIL-PRF-19500/516 requirements for voidless, hermetically sealed, bidirectional TVS diodes - targeting mission-critical power and data line protection where zero-failure tolerance is mandated.
FAQ
What is the clamping voltage of JANTX1N6143US/TR at its rated peak pulse current?
The JANTX1N6143US/TR has a maximum clamping voltage (VC) of 15.6 V at 96.2 A peak pulse current (IPP) for a 10/1000 µs waveform, as specified in Microsemi's T4-LDS-0278-1 Rev. 2 datasheet. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured under standardized impulse conditions. The JANTX1N6143US/TR maintains this clamping performance across its full operating temperature range when properly mounted with adequate thermal path.
Is JANTX1N6143US/TR suitable for bidirectional signal line protection?
Yes, JANTX1N6143US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking - making it appropriate for protecting AC-coupled or floating differential pairs such as MIL-STD-1553B, RS-485, or CAN FD buses. Its 8.4 V working standoff voltage provides headroom for typical signal swing amplitudes while ensuring fast conduction during both positive and negative transients. The JANTX1N6143US/TR achieves this without external biasing or dual-device configurations.
What is the maximum steady-state power dissipation of JANTX1N6143US/TR at 25 °C ambient?
The JANTX1N6143US/TR has a maximum off-state power dissipation (PD) of 3.0 W at TA = 25 °C, as defined in the "Maximum Ratings" table of its datasheet. This rating assumes controlled thermal resistance from mounting point to ambient - typically achieved using copper pour and thermal vias under end-cap terminals. At elevated ambient temperatures, power must be linearly derated per Figure 4, reaching zero at 150 °C end-cap temperature. The JANTX1N6143US/TR does not require active cooling for most 28 V system applications.
Does JANTX1N6143US/TR comply with IEC61000-4-5 for lightning surge immunity?
Yes, JANTX1N6143US/TR provides protection against secondary effects of lightning per select levels of IEC61000-4-5, as confirmed in the "Applications / Benefits" section of Microsemi's T4-LDS-0278-1 datasheet. Its 1500 W peak pulse power rating and 15.6 V clamping voltage enable it to suppress 1 kV line-to-earth surges in combination with appropriate series impedance. The JANTX1N6143US/TR is routinely deployed in DO-160 Section 22 Level 3 and MIL-STD-461G CS115 compliant designs when used with matched source impedance.
What is the temperature coefficient of breakdown voltage for JANTX1N6143US/TR?
The temperature coefficient of breakdown voltage (αV(BR)) for JANTX1N6143US/TR is +0.07 %/°C, meaning its breakdown voltage increases by 0.07% per degree Celsius rise in junction temperature. This value is specified in the Electrical Characteristics table and reflects the positive TC inherent to silicon avalanche structures. For precision voltage reference applications, this drift must be accounted for in thermal design - but for transient suppression, the JANTX1N6143US/TR remains effective across its full -55 °C to +175 °C operating range.
JANTX1N6143US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 8.4V
- Voltage - Breakdown (Min):
- 10.45V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 96.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6143US/TR FAQ
1.How can I place an order for JANTX1N6143US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6143US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6143US/TR reliable?
The price and inventory of JANTX1N6143US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6143US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6143US/TR?
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JANTX1N6143US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6143US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6143US/TR?
For technical support, including JANTX1N6143US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6143US/TR requirements.
6.How does Aetrix verify that JANTX1N6143US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6143US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6143US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6143US/TR?
All JANTX1N6143US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6143US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6143US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6143US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6143US/TR Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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