Microchip Technology JANTX1N6149US/TR
- Part No.:
- JANTX1N6149US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6149US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTX1N6149US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTX reliability level. It features a 15.2 V working peak standoff voltage (VWM), 19.0 V minimum breakdown voltage (V(BR)) at 65 mA, and clamps to 27.7 V at 54.2 A (10/1000 µs pulse), delivering 1500 W peak pulse power for lightning surge and ESD protection in high-reliability military power interfaces.
For engineers reviewing the JANTX1N6149US/TR datasheet, JANTX1N6149US/TR pinout, JANTX1N6149US/TR application, or JANTX1N6149US/TR equivalent, this device serves as a robust, glass-encapsulated, polarity-insensitive transient suppressor with Category 1 metallurgical bonds, RoHS-compliant tin/lead terminations, and SQ-MELF "C" package compatibility for space-constrained, mission-critical PCB layouts.
Technical Context
This TVS operates bidirectionally with no polarity marking and relies on hard-glass construction with tungsten slugs for thermal stability and mechanical ruggedness. Its internal Category 1 metallurgical bonds ensure high-reliability interconnect integrity under thermal cycling and radiation exposure per MicroNote 050.
It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning-induced surges) requirements while maintaining non-sensitivity to ESD per MIL-STD-750 Method 1020. Thermal resistance junction-to-end cap is 5.0 °C/W, enabling stable operation up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15.2 V - Maximum continuous reverse standoff voltage before conduction begins; defines safe operating range for protected circuitry. |
| V(BR) min | 19.0 V @ 65 mA - Minimum breakdown voltage threshold; ensures predictable avalanche onset during transients. |
| VC @ IPP | 27.7 V @ 54.2 A (10/1000 µs) - Clamping voltage under rated surge; determines maximum voltage seen by downstream components. |
| PPP | 1500 W - Peak pulse power handling capability; supports high-energy lightning secondary effects per IEC61000-4-5. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff; negligible loading on low-power signal or bias rails. |
| TJ Range | –55 °C to +175 °C - Full military temperature range; validated for aerospace, avionics, and ground vehicle control systems. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal path to PCB copper or heatsink for sustained pulse duty. |
Pinout & Package
Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs); surface-mount, bidirectional, polarity-unmarked terminals; tin/lead-plated copper; weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No polarity marking required; either end functions identically as cathode or anode depending on transient polarity. |
| End Cap (both ends) | Thermal and electrical terminal | Directly bonded tungsten slug provides low-inductance current path and primary heat dissipation route to PCB pad. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under 1000+ thermal cycles (–55 °C to +175 °C) without interfacial cracking or resistance drift. |
| 1500 W 10/1000 µs pulse rating | Withstands repeated lightning-induced surges per MIL-STD-461G CS115 without parameter shift or catastrophic failure. |
| Non-sensitive to ESD (MIL-STD-750 Method 1020) | Enables handling and assembly without ESD protection equipment, reducing manufacturing overhead in cleanroom-limited facilities. |
| RoHS-compliant terminations (commercial only) | Tin/lead plating ensures solderability and intermetallic formation control; matte-tin option available for Pb-free compliance where permitted. |
Applications
| Aerospace Power Bus Protection | Avionics Sensor Interface |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution lines against load dump and lightning-induced transients. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit voltage excursions to ≤27.7 V during 54.2 A surges. Use Value: Prevents latch-up or burnout in upstream DC-DC converters and downstream flight control microcontrollers. |
Use Scenario: Shielding analog sensor inputs (e.g., pressure, temperature) in engine control units from ESD events during maintenance. IC Role / Device Role / Timing Role: Low-leakage (5 µA) standoff protector that remains transparent during normal operation but clamps sub-100 ns ESD pulses. Use Value: Maintains signal integrity below 1 mV offset shift while surviving >15 kV contact discharge per IEC61000-4-2 Level 4. |
| Ground Vehicle Command & Control | Military Radio Front-End |
Use Scenario: Safeguarding CAN and RS-485 transceivers in armored vehicle communication nodes exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Fast-response TVS placed at connector entry point to shunt common-mode surges before reaching isolation barriers. Use Value: Enables uninterrupted data transmission during 10/1000 µs surges up to 1500 W without resetting or bit errors. |
Use Scenario: Protecting RF power amplifier bias rails and antenna switch control lines in manpack radios subjected to battlefield ESD and static discharge. IC Role / Device Role / Timing Role: High-reliability standoff device with radiation-hardened structure per MicroNote 050, operating continuously at 125 °C ambient. Use Value: Sustains full RF output power and modulation fidelity after exposure to 50 krad(Si) total ionizing dose without parameter degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6149US/TR (commercial grade) | No MIL-PRF-19500/516 qualification; same electrical specs but lower screening; RoHS-compliant terminations available. | Suitable for industrial or commercial avionics derivatives where full JANTX testing is not mandated. | Select when cost sensitivity outweighs mandatory military screening, and RoHS compliance is required. |
| JANTXV1N6149US/TR | Higher reliability screening per JANTXV level (extended temperature, burn-in, life test); identical VWM, V(BR), VC, PPP. | Required for flight-critical subsystems where zero latent defects and extended lifetime validation are contractually enforced. | Choose when system-level qualification demands enhanced screening beyond JANTX, especially for space or strategic platforms. |
Compared with JANTX1N6149US/TR, the commercial 1N6149US/TR offers identical clamping performance at lower cost and RoHS compliance but lacks military screening, while JANTXV1N6149US/TR adds rigorous burn-in and life testing for ultra-high-reliability deployments-enabling tiered selection based on program assurance requirements.
Availability
JANTX1N6149US/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics sensor interface, and ground vehicle command & control requiring stable component supply across long production lifecycles and defense sustainment programs.
Supply support for JANTX1N6149US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec qualified components.
The JANTX1N6149US/TR belongs to Microsemi's legacy MIL-PRF-19500/516-qualified TVS family, engineered specifically for mission-critical transient suppression where failure is not an option-targeting airborne, spaceborne, and tactical ground systems.
FAQ
What is the clamping voltage of JANTX1N6149US/TR under a 10/1000 µs surge?
The JANTX1N6149US/TR clamps to a maximum of 27.7 V when subjected to a 54.2 A peak pulse current with a 10/1000 µs waveform. This value is guaranteed per the manufacturer's electrical characteristics table and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The clamping behavior is symmetric due to its bidirectional construction, ensuring consistent protection regardless of transient polarity.
Is JANTX1N6149US/TR compatible with lead-free reflow processes?
JANTX1N6149US/TR uses tin/lead-plated terminations and is rated for a maximum solder temperature of 260 °C for 10 seconds, making it compatible with standard SnPb reflow profiles. While RoHS-compliant matte-tin versions exist for commercial-grade variants, the JANTX version itself is not lead-free; use with lead-free assembly requires process validation to avoid intermetallic embrittlement or dewetting.
Does JANTX1N6149US/TR require polarity-aware PCB layout?
No-JANTX1N6149US/TR is a bidirectional TVS with no polarity marking and symmetrical terminal construction. Either end may be connected to positive or negative rails without functional impact. Its SQ-MELF "C" package has identical end-cap geometry, and the internal junction is inherently bidirectional, eliminating orientation constraints during placement and simplifying automated assembly.
How does JANTX1N6149US/TR perform under high-temperature operation?
JANTX1N6149US/TR is rated for continuous operation from –55 °C to +175 °C junction temperature, with derated power above 150 °C end-cap temperature. Its hard-glass encapsulation and Category 1 metallurgical bonds maintain parameter stability across thermal cycling, supporting deployment in engine bays, radar housings, and satellite power systems where ambient temperatures exceed 125 °C.
What standards does JANTX1N6149US/TR meet for electromagnetic immunity?
JANTX1N6149US/TR provides protection aligned with IEC61000-4-2 (ESD ±15 kV contact), IEC61000-4-4 (EFT 4 kV), and select levels of IEC61000-4-5 (lightning surge). It also complies with MIL-STD-461G CS115 for conducted susceptibility and is non-sensitive to ESD per MIL-STD-750 Method 1020-making it suitable for platforms requiring full DoD electromagnetic environmental effects (E3) certification.
JANTX1N6149US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 15.2V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 54.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6149US/TR FAQ
1.How can I place an order for JANTX1N6149US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6149US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6149US/TR reliable?
The price and inventory of JANTX1N6149US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6149US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6149US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6149US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6149US/TR?
JANTX1N6149US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6149US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6149US/TR?
For technical support, including JANTX1N6149US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6149US/TR requirements.
6.How does Aetrix verify that JANTX1N6149US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6149US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6149US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6149US/TR?
All JANTX1N6149US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6149US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6149US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6149US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6149US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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