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Microchip Technology JANTX1N6152US/TR
- Part No.:
- JANTX1N6152US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6152US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
JANTX1N6152US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTX reliability level. It provides 20.6 V working standoff voltage (VWM), 25.7 V minimum breakdown voltage (V(BR)), 37.4 V clamping voltage (VC) at 40.1 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JANTX1N6152US/TR datasheet, JANTX1N6152US/TR pinout, JANTX1N6152US/TR application, or JANTX1N6152US/TR equivalent, key selection criteria include military-grade surge robustness, bidirectional clamping symmetry, hermetic glass package integrity, and compliance with IEC61000-4-2/4-4/4-5 transient immunity standards.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass construction incorporates internal Category 1 metallurgical bonds and triple-layer passivation to ensure survivability under repeated 1500 W transients and radiation-hardened operation per MicroNote 050.
It delivers ESD protection per IEC61000-4-2 (±15 kV air, ±8 kV contact), EFT immunity per IEC61000-4-4 (40 A, 5/50 ns), and lightning-induced surge suppression per select IEC61000-4-5 levels. Thermal resistance from junction to end cap is 5.0 °C/W, enabling stable operation up to +175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20.6 V - maximum continuous reverse/dc voltage before conduction begins; defines safe operating margin below clamping threshold. |
| V(BR) min | 25.7 V @ 50 mA - guaranteed avalanche onset voltage; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 37.4 V @ 40.1 A - clamped voltage during 10/1000 µs surge; determines protected circuit's maximum stress level. |
| PPP | 1500 W - peak impulse power handling for standardized 10/1000 µs waveform; enables high-energy transient absorption. |
| ID @ VWM | 5 µA - leakage current at rated standoff; ensures minimal standby power loss and signal integrity in high-impedance nodes. |
| TJ Range | –55 °C to +175 °C - operational junction temperature range; supports deployment in extreme environmental conditions. |
| αV(BR) | 0.09 %/°C - temperature coefficient of breakdown voltage; allows accurate derating across wide thermal excursions. |
Pinout & Package
Package: SQ-MELF (C-type), voidless hermetically sealed hard-glass case with tungsten slugs and tin/lead-plated copper terminals. No polarity marking due to bidirectional functionality.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Identical electrical behavior in either orientation; no anode/cathode distinction required in layout or routing. |
| End Cap (both ends) | Thermal and electrical termination | Provides low-thermal-resistance path (RθJEC = 5.0 °C/W) and mechanical anchoring; soldered directly to PCB pads. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk - critical for >20-year field life in sealed military enclosures. |
| Category 1 metallurgical bonds | Ensures bond integrity under thermal cycling and mechanical shock per MIL-STD-883, supporting JANTX-level reliability screening. |
| Triple-layer passivation | Prevents surface leakage and contamination-induced degradation in high-humidity or salt-fog environments. |
| MIL-PRF-19500/516 qualification | Validated performance across temperature, vibration, burn-in, and life test requirements for JAN/JANTX/JANTXV/JANS levels. |
Applications
| Aerospace Power Distribution | Ground Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in satellite power conditioning units against load dump and coupling transients. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed directly at connector entry point to limit voltage excursion to <37.4 V. Use Value: Prevents latch-up or gate oxide rupture in downstream DC/DC controllers by clamping surges within 10/1000 µs without degradation over 100,000+ cycles. |
Use Scenario: Surge suppression on CAN-FD and LIN bus lines in armored vehicle control modules exposed to ignition noise and EMP. IC Role / Device Role / Timing Role: Standoff-rated TVS shunting fast-rising transients while maintaining signal integrity below 20.6 V during normal operation. Use Value: Meets IEC61000-4-4 Level 4 (40 A) and IEC61000-4-5 Line-to-Ground 2 kV without derating, ensuring functional safety compliance. |
| Tactical Radio Front-Ends | Naval Radar Power Supplies |
Use Scenario: Input-stage protection for HF/VHF transceiver RF power amplifiers subjected to antenna-coupled lightning induction. IC Role / Device Role / Timing Role: Fast-response bidirectional clamp absorbing multi-kW induced surges before reaching sensitive GaN HEMT bias networks. Use Value: Withstands 1500 W peak pulse without parametric shift or catastrophic failure, preserving mean time between failures (MTBF) >100,000 hours. |
Use Scenario: DC link protection in marine radar modulator supplies where salt mist and thermal cycling accelerate package corrosion. IC Role / Device Role / Timing Role: Hermetically sealed TVS replacing epoxy-encapsulated alternatives to prevent moisture-driven parameter drift. Use Value: Maintains V(BR) stability within ±2% over 15-year service life in Class 3 marine environments per MIL-STD-810H Method 509.6. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6152AUS | Commercial-grade version; same VWM (20.6 V), VC (37.4 V), and PPP (1500 W), but not MIL-qualified. | Lacks JANTX screening, burn-in, and lot traceability; unsuitable for DoD or space programs requiring MIL-PRF-19500/516. | Select only for non-military industrial prototypes or cost-sensitive commercial designs where full qualification is unnecessary. |
| JANTXV1N6152US | Higher-reliability JANTXV grade: tighter parametric limits, extended life testing, and enhanced screening per MIL-PRF-19500/516. | Required for mission-critical subsystems (e.g., flight control actuators) where zero-failure probability is mandated. | Choose when system-level FMEA demands >99.999% confidence in surge survival under worst-case lightning injection. |
Compared with JANTX1N6152US/TR, the commercial 1N6152AUS offers identical electrical specs but no military qualification, while JANTXV1N6152US adds stricter screening and longer proven life - making the JANTX variant the optimal balance of ruggedness, traceability, and program affordability.
Availability
JANTX1N6152US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, ground vehicle ECUs, tactical radio front-ends, and naval radar power supplies requiring stable component supply across long-lifecycle defense programs.
Supply support for JANTX1N6152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JANTX1N6152US/TR belongs to Microsemi's MIL-qualified TVS diode family designed specifically for fail-safe transient suppression in mission-critical systems where hermeticity, radiation tolerance, and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of JANTX1N6152US/TR under a 10/1000 µs surge?
The JANTX1N6152US/TR has a maximum clamping voltage (VC) of 37.4 V when subjected to its rated peak pulse current of 40.1 A using the standard 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and guarantees that downstream circuitry remains below destructive voltage thresholds during transient events. The JANTX1N6152US/TR maintains this clamping performance across its full –55 °C to +175 °C operating junction temperature range.
Is JANTX1N6152US/TR RoHS compliant?
No, JANTX1N6152US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants (e.g., 1N6152AUS), not for JANTX-qualified parts. The JANTX1N6152US/TR uses traditional tin/lead plating on copper terminals to meet MIL-PRF-19500/516 solderability and reliability requirements, including resistance to thermal fatigue during reflow and repair cycles.
Does JANTX1N6152US/TR have polarity markings?
No, JANTX1N6152US/TR has no polarity markings because it is a bidirectional TVS diode. Its symmetrical avalanche structure provides identical clamping behavior in both forward and reverse directions, eliminating the need for orientation-specific placement. This simplifies PCB layout and reduces assembly errors in high-reliability systems where manual inspection is limited.
What is the thermal resistance of JANTX1N6152US/TR?
The thermal resistance from junction to end cap (RθJEC) of JANTX1N6152US/TR is 5.0 °C/W, as specified in the Microsemi datasheet. This low thermal resistance enables efficient heat dissipation through the end caps into the PCB copper, supporting sustained operation at elevated ambient temperatures and allowing reliable use in thermally constrained military chassis environments. The JANTX1N6152US/TR leverages tungsten slugs and hermetic glass packaging to achieve this performance.
How does JANTX1N6152US/TR differ from JANS1N6152US/TR?
JANTX1N6152US/TR is qualified to MIL-PRF-19500/516 at the JANTX reliability level, which includes screening for temperature cycling, burn-in, and parametric verification. JANS1N6152US/TR undergoes additional radiation hardness assurance (RHA) testing per MIL-STD-883 Method 1019 and is screened for total ionizing dose (TID) up to 100 krad(Si), making it suitable for spaceflight applications. Both share identical electrical specs, but JANS adds radiation tolerance and extended environmental stress screening beyond JANTX requirements.
JANTX1N6152US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 20.6V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 40.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6152US/TR FAQ
1.How can I place an order for JANTX1N6152US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6152US/TR reliable?
The price and inventory of JANTX1N6152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6152US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6152US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6152US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6152US/TR?
JANTX1N6152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6152US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6152US/TR?
For technical support, including JANTX1N6152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6152US/TR requirements.
6.How does Aetrix verify that JANTX1N6152US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6152US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6152US/TR?
All JANTX1N6152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6152US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6152US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6152US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6152US/TR Tags
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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