Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTX1N6154US/TR

Part No.:
JANTX1N6154US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJANTX1N6154US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,822

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTX1N6154US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF (C) package, rated for 1500 W peak pulse power (10/1000 µs), 25.1 V working standoff voltage (VWM), and 45.7 V clamping voltage (VC) at 32.8 A peak pulse current. It operates across –55 °C to +175 °C and is used in high-reliability avionics power rail protection.

For engineers reviewing the JANTX1N6154US/TR datasheet, JANTX1N6154US/TR pinout, JANTX1N6154US/TR application, or JANTX1N6154US/TR equivalent, key selection criteria include MIL-PRF-19500/516 JANTX qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC 61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.

Technical Context

This device functions as a bidirectional voltage-clamping protector with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass construction uses Category 1 internal metallurgical bonds and triple-layer passivation to ensure robustness under repeated transients and radiation-hardened operation per MicroNote 050.

It delivers 1500 W peak pulse power for 10/1000 µs waveform while maintaining 25.1 V maximum working standoff voltage and 45.7 V clamping voltage at 32.8 A. Thermal resistance from junction to end cap is 5.0 °C/W, enabling stable operation up to 175 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 25.1 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins.
VC @ IPP 45.7 V at 32.8 A - Clamped voltage during 10/1000 µs transient, limiting downstream circuit stress.
PPP 1500 W - Peak pulse power handling capability for standardized surge waveform.
TJ/TSTG –55 °C to +175 °C - Full military-grade operating and storage temperature range.
RθJEC 5.0 °C/W - Junction-to-end-cap thermal resistance, critical for thermal design in high-power surges.
ID @ VWM 5 µA - Low leakage current ensures minimal standby power loss in protected circuits.
αV(BR) 0.095 %/°C - Temperature coefficient of breakdown voltage, supporting stable clamping over temperature.

Pinout & Package

Package: SQ-MELF (C) - Voidless hermetically sealed hard-glass case with tungsten slugs and tin/lead-plated copper terminals. Square-end-cap geometry enables precise automated placement and reliable solder joint formation.

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (bidirectional) Transient conduction path No polarity marking; symmetric terminals conduct equally in either direction during overvoltage events.
End Cap (both ends) Thermal interface & mechanical anchor Direct thermal path to PCB pad; tungsten slugs and low RθJEC enable efficient heat dissipation during surge.

Key Features

Feature Design Value
Bidirectional clamping Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns.
Category 1 metallurgical bonds Guarantees bond integrity under thermal cycling and mechanical shock, meeting MIL-PRF-19500/516 reliability requirements.
Voidless hermetic seal Prevents moisture ingress and long-term parameter drift in harsh environments including space and aviation systems.
Triple-layer passivation Enhances surface stability and reduces leakage current drift under high-humidity or ionizing radiation exposure.
MIL-PRF-19500/516 JANTX qualification Validates screening, testing, and traceability for use in defense electronics where failure is not tolerable.

Applications

Aerospace Power Distribution Avionics Sensor Interface

Use Scenario: Protection of 28 V DC aircraft bus against load dump and lightning-induced transients.

IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed across bus input to limit voltage excursions to <46 V.

Use Value: Prevents damage to downstream DC-DC converters and microcontrollers during MIL-STD-461 CS115 pulses.

Use Scenario: Shielding analog sensor inputs (e.g., RTD, thermocouple) from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-leakage (<5 µA) standoff device that remains non-conductive until >25.1 V appears.

Use Value: Maintains signal integrity while providing IEC 61000-4-2 Level 4 (15 kV air) immunity without loading the sensor bridge.

Military Radio Front-End Satellite Power Conditioning

Use Scenario: Surge suppression on RF amplifier bias rails exposed to EMP and antenna-coupled transients.

IC Role / Device Role / Timing Role: Fast-response clamping element with <1 ns response time inherent to avalanche diodes.

Use Value: Limits voltage overshoot to 45.7 V during 10/1000 µs pulses, preserving GaN FET gate oxide integrity.

Use Scenario: Input protection for DC-DC converters in LEO satellite power systems subject to TID and displacement damage.

IC Role / Device Role / Timing Role: Radiation-hardened TVS with documented performance per MicroNote 050.

Use Value: Sustains clamping parameters after 100 krad(Si) total ionizing dose, eliminating need for derating or redundancy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6154AUS Commercial-grade version; same VWM, VC, and PPP but lacks MIL-PRF-19500/516 JANTX screening and radiation hardness data. Approved for industrial/commercial aerospace subsystems but not flight-critical avionics. Select when full military qualification is unnecessary and cost sensitivity is higher.
JANTXV1N6154US Higher reliability level (JANTXV); includes extended burn-in, lot acceptance testing, and tighter parametric limits per MIL-PRF-19500/516. Required for Class H (high-reliability) and space-qualified programs where zero defect tolerance applies. Choose when mission-critical operation demands enhanced screening beyond JANTX baseline.

Compared with JANTX1N6154US/TR, the commercial 1N6154AUS offers identical electrical specs but no military screening, while JANTXV1N6154US adds process rigor and test coverage-enabling trade-offs between cost, qualification depth, and radiation assurance without changing circuit design or layout.

Availability

JANTX1N6154US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, military radio front-end, and satellite power conditioning requiring stable component supply across extended lifecycle programs.

Supply support for JANTX1N6154US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.

The JANTX1N6154US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme electromagnetic environments-including lightning, ESD, and nuclear EMP-where failure is not an option.

FAQ

What is the clamping voltage of JANTX1N6154US/TR and how is it measured?

The clamping voltage of JANTX1N6154US/TR is 45.7 V, measured at 32.8 A peak pulse current using the standard 10/1000 µs double-exponential waveform. This value represents the maximum voltage seen across the device during a defined surge event and is specified in the Electrical Characteristics table on page 3 of the T4-LDS-0278-1 datasheet. JANTX1N6154US/TR maintains this clamping performance across its full operating temperature range.

Is JANTX1N6154US/TR RoHS compliant?

No, JANTX1N6154US/TR is not RoHS compliant. Per the nomenclature section in the datasheet, RoHS-compliant versions (marked with "e3") are available only for commercial-grade parts-not for JAN, JANTX, JANTXV, or JANS qualified devices like JANTX1N6154US/TR. The terminals use tin/lead plating to meet MIL-PRF-19500/516 solderability and reliability requirements.

Does JANTX1N6154US/TR have polarity markings?

No, JANTX1N6154US/TR has no polarity markings because it is a bidirectional TVS diode. Its symmetrical construction allows it to clamp overvoltage transients equally in both directions, making it suitable for AC lines, floating references, or unidirectional rails where reverse polarity risk exists. The SQ-MELF package features identical square-end-cap terminals at both ends.

What is the thermal resistance specification for JANTX1N6154US/TR?

JANTX1N6154US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, as stated in the Maximum Ratings table. This parameter reflects the thermal path from the silicon junction through the tungsten slug to the end-cap solder interface. It is critical for calculating temperature rise during repetitive surge events and must be used with PCB copper area and ambient conditions to ensure junction temperature stays below 175 °C.

How does JANTX1N6154US/TR differ from the commercial 1N6154AUS part?

JANTX1N6154US/TR differs from 1N6154AUS in qualification level, screening, and environmental assurance-not electrical specs. Both share identical VWM (25.1 V), VC (45.7 V), and PPP (1500 W), but JANTX1N6154US/TR undergoes MIL-PRF-19500/516 JANTX-level screening including extended temperature cycling, hermeticity testing, and lot traceability. JANTX1N6154US/TR also supports radiation hardness documentation per MicroNote 050, which 1N6154AUS does not.

JANTX1N6154US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
25.1V
Voltage - Breakdown (Min):
31.4V
Voltage - Clamping (Max) @ Ipp:
45.7V
Current - Peak Pulse (10/1000µs):
32.8A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JANTX1N6154US/TR FAQ

1.How can I place an order for JANTX1N6154US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTX1N6154US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTX1N6154US/TR reliable?

The price and inventory of JANTX1N6154US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6154US/TR is usually 5 days.

3.What payment methods are accepted for JANTX1N6154US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6154US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTX1N6154US/TR?

JANTX1N6154US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTX1N6154US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTX1N6154US/TR?

For technical support, including JANTX1N6154US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6154US/TR requirements.

6.How does Aetrix verify that JANTX1N6154US/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N6154US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6154US/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N6154US/TR?

All JANTX1N6154US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6154US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N6154US/TR part is unused and in its original packaging.

Return procedure for JANTX1N6154US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTX1N6154US/TR Tags

  • JANTX1N6154US/TR
  • JANTX1N6154US/TR PDF
  • JANTX1N6154US/TR Datasheet
  • JANTX1N6154US/TR Specifications
  • JANTX1N6154US/TR Images
  • Microchip Technology
  • Microchip Technology JANTX1N6154US/TR
  • Buy JANTX1N6154US/TR
  • JANTX1N6154US/TR Price
  • JANTX1N6154US/TR Distributor
  • JANTX1N6154US/TR Supplier
  • JANTX1N6154US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER