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Microchip Technology JANTX1N6159US/TR
- Part No.:
- JANTX1N6159US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6159US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,436
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Product details
Overview
JANTX1N6159US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, with 38.8 V working standoff voltage (VWM), 48.5 V minimum breakdown voltage (V(BR)), and 70.1 V clamping voltage (VC) at 21.4 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates from –55 °C to +175 °C, used in avionics power rail protection.
For engineers reviewing the JANTX1N6159US/TR datasheet, JANTX1N6159US/TR pinout, JANTX1N6159US/TR application, or JANTX1N6159US/TR equivalent, key selection criteria include MIL-PRF-19500/516 JANTX qualification level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This device implements a silicon avalanche diode structure optimized for high-reliability transient suppression, with triple-layer passivation and Category 1 metallurgical bonds ensuring robustness under radiation and thermal cycling. Its bidirectional symmetry enables protection of AC-coupled or floating signal lines without polarity concerns.
Designed for surface-mount deployment on rigid PCBs, the JANTX1N6159US/TR uses square-end-cap terminals for precise placement and relies on end-cap thermal conduction (RθJEC = 5.0 °C/W) rather than board trace dissipation. It exhibits a 0.095 %/°C temperature coefficient of breakdown voltage (αV(BR)), enabling predictable clamping over wide temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 38.8 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins. |
| V(BR) min | 48.5 V @ 25 mA - Minimum voltage at which avalanche breakdown initiates, defining turn-on threshold. |
| VC @ IPP | 70.1 V @ 21.4 A - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress. |
| PPP | 1500 W - Peak transient energy handling capability per single 10/1000 µs pulse. |
| ID @ VWM | 5 µA - Leakage current at rated standoff voltage, minimizing standby power loss. |
| TJ range | –55 °C to +175 °C - Full operational junction temperature range for extreme-environment deployment. |
| αV(BR) | 0.095 %/°C - Predictable drift in breakdown voltage with temperature, critical for precision clamping stability. |
Pinout & Package
Package: SQ-MELF (square-end-cap metal-encapsulated glass body), hermetically sealed, voidless, with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | No polarity marking; either terminal serves as anode or cathode depending on transient polarity - enables symmetric AC or floating-line protection. |
| End Cap (both ends) | Thermal interface & mechanical anchor | Primary heat path to PCB mounting surface; RθJEC = 5.0 °C/W defines thermal performance ceiling in conduction-cooled layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables protection of AC-coupled, differential, or ungrounded signal paths without polarity constraints or external diode pairing. |
| Category 1 metallurgical bonds | Ensures mechanical integrity and bond reliability under shock, vibration, and thermal cycling per MIL-STD-750 Method 2025. |
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion, supporting >20-year field life in sealed military enclosures. |
| JANTX qualification | Fully tested to MIL-PRF-19500/516 requirements including screening, burn-in, and lot acceptance testing for aerospace-grade reliability. |
Applications
| Avionics Power Distribution | Ground Vehicle Control Units |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in flight control computers against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Standoff-clamp TVS placed directly across input rails to clamp surges before they reach DC-DC converters and microcontrollers. Use Value: Withstands 1500 W pulses while holding clamped voltage to 70.1 V, preventing overvoltage damage to downstream 3.3 V/5 V logic and analog sensors. | Use Scenario: Surge suppression on CAN FD transceiver power pins in armored vehicle communication modules exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Bidirectional transient shunt protecting both VCC and ground-referenced signal lines from common-mode and differential transients. Use Value: 0.095 %/°C αV(BR) ensures stable clamping across –40 °C to +85 °C vehicle operating range, maintaining CAN signal integrity. |
| Tactical Radio Front-Ends | Satellite Payload Power Interfaces |
Use Scenario: Input protection for RF power amplifier bias supplies in handheld radios subjected to electrostatic discharge during field handling. IC Role / Device Role / Timing Role: First-line defense against IEC61000-4-2 ±15 kV contact discharge events on DC input connectors. Use Value: Sub-5 µA leakage at 38.8 V VWM avoids loading sensitive bias networks; 70.1 V VC limits transient overshoot below amplifier absolute maximum ratings. | Use Scenario: Secondary surge protection on regulated 28 V power feeds to satellite star tracker electronics in low-Earth orbit. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary lightning-induced transients coupled through solar array harnesses. Use Value: Inherent radiation hardness per MicroNote 050 and JANTX-level screening ensure functional survival after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6159AUS | Commercial-grade version; same electrical specs but no MIL-PRF-19500/516 screening or JANTX qualification. | Lacks burn-in, lot acceptance testing, and extended temperature screening - unsuitable for flight-critical systems. | Select only for non-military industrial prototypes where cost outweighs long-term reliability assurance. |
| JANTXV1N6159US | Higher reliability screening level (JANTXV); includes additional environmental stress screening and tighter parametric limits. | Required for space-qualified subsystems and mission-critical avionics where failure modes must be statistically bounded. | Choose when system-level FMEA mandates enhanced screening beyond JANTX, especially for launch-vibration-sensitive payloads. |
Compared with 1N6159AUS and JANTXV1N6159US, the JANTX1N6159US/TR provides validated military reliability at a balanced cost/performance point - sufficient for ground-based radar systems and airborne non-flight-critical subsystems without requiring full JANTXV overhead.
Availability
JANTX1N6159US/TR is available at Aetrix Electronics and suitable for avionics power distribution, ground vehicle control units, tactical radio front-ends, and satellite payload power interfaces requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N6159US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JANTX1N6159US/TR belongs to Microsemi's 1N6138AUS–1N6173AUS TVS family, engineered specifically for military-grade transient suppression in harsh environments where failure is not an option.
FAQ
What is the clamping voltage of JANTX1N6159US/TR and how is it measured?
The JANTX1N6159US/TR has a maximum clamping voltage (VC) of 70.1 V, measured at a peak pulse current (IPP) of 21.4 A using a standardized 10/1000 µs double-exponential waveform. This value is guaranteed per MIL-PRF-19500/516 test conditions and reflects the voltage seen by protected circuitry during worst-case surge events. The JANTX1N6159US/TR maintains this clamping performance across its full operating temperature range.
Is JANTX1N6159US/TR RoHS compliant?
No, JANTX1N6159US/TR is not RoHS compliant. Per the nomenclature table in Microsemi T4-LDS-0278-1 Rev. 2, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants (e.g., 1N6159AUS), not for JANTX-qualified parts. The JANTX1N6159US/TR uses standard tin/lead plating on copper terminals to meet MIL-STD-202 and MIL-STD-750 solderability requirements.
What does the "TR" suffix mean in JANTX1N6159US/TR?
The "TR" suffix in JANTX1N6159US/TR indicates tape-and-reel packaging per EIA-481-B standard, intended for automated SMT placement. It denotes the same electrical and mechanical specifications as the base JANTX1N6159US part, with no performance or reliability differences. The JANTX1N6159US/TR is supplied in reels compatible with standard pick-and-place equipment used in high-reliability electronics assembly.
How does JANTX1N6159US/TR differ from the non-"A" version 1N6159US?
The JANTX1N6159US/TR is the "A" version, meaning it has tighter voltage tolerances: 5% lower maximum clamping voltage (VC), 5% higher minimum breakdown voltage (V(BR)), and 5% higher peak pulse current (IPP) compared to the non-A variant 1N6159US. These improvements enhance surge margin and consistency in high-reliability applications. The JANTX1N6159US/TR also includes full JANTX-level screening per MIL-PRF-19500/516.
Can JANTX1N6159US/TR be used in place of axial-leaded 1N6159?
No - JANTX1N6159US/TR is a surface-mount SQ-MELF device, while axial-leaded 1N6159 is a through-hole package with different thermal and mechanical characteristics. Although electrically identical in nominal parameters, the JANTX1N6159US/TR requires reflow-compatible PCB layout and lacks lead-forming flexibility. Direct substitution would require board redesign; the JANTX1N6159US/TR is not a drop-in replacement for axial-leaded versions.
JANTX1N6159US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 38.8V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 21.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6159US/TR FAQ
1.How can I place an order for JANTX1N6159US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6159US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6159US/TR reliable?
The price and inventory of JANTX1N6159US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6159US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6159US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6159US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6159US/TR?
JANTX1N6159US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6159US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6159US/TR?
For technical support, including JANTX1N6159US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6159US/TR requirements.
6.How does Aetrix verify that JANTX1N6159US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6159US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6159US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6159US/TR?
All JANTX1N6159US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6159US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6159US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6159US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6159US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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