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Microchip Technology JANTX1N6160US/TR
- Part No.:
- JANTX1N6160US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6160US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,019
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Product details
Overview
JANTX1N6160US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTX reliability level. It provides 42.6 V working peak standoff voltage (VWM), 53.2 V minimum breakdown voltage (V(BR)) at 20 mA, and clamps transients to 77.0 V at 19.5 A (10/1000 µs pulse), delivering 1500 W peak pulse power for lightning surge and ESD protection in avionics power interfaces.
For engineers reviewing the JANTX1N6160US/TR datasheet, JANTX1N6160US/TR pinout, JANTX1N6160US/TR application, or JANTX1N6160US/TR equivalent, this part supports high-reliability transient suppression where failure tolerance, radiation hardness, and military-grade thermal stability (–55 °C to +175 °C junction range) are mandatory design requirements.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses hard-glass construction with internal Category 1 metallurgical bonds for robustness under repeated surge stress. Its clamping behavior is defined by a 10/1000 µs waveform, with thermal resistance junction-to-end cap of 5.0 °C/W and linear derating above 150 °C end-cap temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning secondary effects) immunity standards. It is inherently radiation-hard per MicroNote 050 and non-sensitive to ESD per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 42.6 V - Maximum continuous reverse standoff voltage before conduction begins; sets operating margin below breakdown. |
| V(BR) min | 53.2 V @ 20 mA - Minimum voltage at which device enters avalanche breakdown; defines lower bound of protection threshold. |
| VC @ IPP | 77.0 V @ 19.5 A - Clamping voltage during 10/1000 µs surge; determines maximum voltage seen by protected circuitry. |
| PPP | 1500 W - Peak pulse power handling capability; enables survival of high-energy transients like lightning-induced surges. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff; ensures minimal power loss and signal integrity in standby. |
| TJ Range | –55 °C to +175 °C - Full military-grade junction temperature range; supports operation in extreme environmental conditions. |
| RθJEC | 5.0 °C/W - Thermal resistance from junction to end cap; critical for thermal design when mounted on heat-conductive substrates. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style), with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path terminal | No polarity marking; either end serves as anode or cathode depending on transient polarity-enables symmetric clamping without orientation constraints. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal voids that cause moisture ingress or bond degradation-ensures long-term reliability in humid or vacuum environments. |
| Category 1 metallurgical bonds | High-strength internal interconnects certified per MIL-PRF-19500/516-resists mechanical shock and thermal cycling fatigue. |
| Triple-layer passivation | Surface dielectric barrier against contamination and ion migration-maintains stable V(BR) and low ID over lifetime. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050-operates without parameter shift in total ionizing dose (TID) environments up to 100 krad(Si). |
Applications
| Aerospace Power Bus Protection | Avionics Sensor Interface |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution lines from load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed across bus rails to limit transient overvoltage to safe levels. Use Value: Withstands 1500 W 10/1000 µs pulses and operates from –55 °C to +175 °C-meets DO-160 Section 22 Level 3 lightning requirements. |
Use Scenario: Shielding analog sensor inputs (e.g., pressure, temperature) in flight control units from ESD and EFT events. IC Role / Device Role / Timing Role: Low-leakage (5 µA) standoff device placed at connector entry to shunt fast transients before signal conditioning. Use Value: 77.0 V clamping at 19.5 A ensures downstream op-amps and ADCs remain within absolute maximum ratings during IEC61000-4-2 ±15 kV contact discharge. |
| Military Vehicle Data Link | Ground-Based Radar Power Supply |
Use Scenario: Securing RS-422/RS-485 data lines in armored vehicle communication systems exposed to EMP and conducted surges. IC Role / Device Role / Timing Role: Bidirectional transient suppressor installed differential-mode across twisted-pair lines near connectors. Use Value: Symmetric clamping and no polarity dependency simplify layout; Category 1 bonds ensure survivability under MIL-STD-461G CS115 burst testing. |
Use Scenario: Hardening high-voltage DC supplies (e.g., magnetron bias) in radar transmitters against switching transients and grid disturbances. IC Role / Device Role / Timing Role: Primary surge limiter mounted directly at input filter stage to absorb energy before it reaches regulation circuitry. Use Value: 1500 W PPP rating and 5.0 °C/W RθJEC allow direct mounting to chassis for effective thermal dissipation during repetitive surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6160US | Higher reliability qualification (JANTXV vs. JANTX); tighter parametric screening and extended temperature testing per MIL-PRF-19500/516. | Required for space-grade or mission-critical systems where single-event burnout (SEB) immunity and lot traceability are mandated. | Select JANTXV1N6160US when full JANTXV screening and enhanced radiation tolerance documentation are contractually required. |
| 1N6160AUS | Commercial-grade version; same electrical specs but not MIL-qualified; RoHS-compliant matte-tin plating available. | Suitable for non-military industrial or test equipment where cost sensitivity outweighs qualification requirements. | Choose 1N6160AUS only for commercial applications with no MIL-PRF-19500/516 compliance obligation. |
Compared with JANTX1N6160US/TR, JANTXV1N6160US adds qualification rigor without changing clamping performance, while 1N6160AUS removes military screening entirely-making the JANTX variant the optimal balance of assured reliability and procurement availability for defense contractors.
Availability
JANTX1N6160US/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics sensor interface, and military vehicle data link applications requiring stable component supply across extended production lifecycles.
Supply support for JANTX1N6160US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-qualified components.
The JANTX1N6160US/TR belongs to Microsemi's legacy MIL-PRF-19500/516-qualified TVS family, engineered specifically for fail-safe transient suppression in safety-critical platforms where hermetic sealing and Category 1 bonding are non-negotiable.
FAQ
What is the clamping voltage of JANTX1N6160US/TR under a 10/1000 µs surge?
The JANTX1N6160US/TR clamps to a maximum of 77.0 V when subjected to a 19.5 A peak pulse current with a 10/1000 µs waveform. This value is guaranteed per the manufacturer's electrical characteristics table and defines the upper voltage limit imposed on protected circuits during surge events. The clamping performance remains stable across the full –55 °C to +175 °C junction temperature range specified for JANTX1N6160US/TR.
Is JANTX1N6160US/TR suitable for bidirectional signal line protection?
Yes, JANTX1N6160US/TR is explicitly designed as a bidirectional TVS with no polarity marking, making it ideal for protecting AC-coupled or differential signal lines such as RS-422, RS-485, or MIL-STD-1553 buses. Its symmetrical breakdown and clamping behavior ensures equal protection against positive and negative transients without requiring orientation-specific placement-critical for compact, high-density avionics layouts using JANTX1N6160US/TR.
Does JANTX1N6160US/TR meet IEC61000-4-5 lightning surge immunity standards?
JANTX1N6160US/TR provides protection against the secondary effects of lightning per select levels in IEC61000-4-5, as confirmed in the official Microsemi application documentation. Its 1500 W peak pulse power rating and 77.0 V clamping voltage enable compliance with Level 3 and Level 4 coupling network requirements when properly implemented with appropriate PCB layout and grounding-verified in system-level testing of platforms deploying JANTX1N6160US/TR.
What is the maximum steady-state power dissipation of JANTX1N6160US/TR at 25 °C ambient?
JANTX1N6160US/TR has a maximum off-state power rating of 3.0 W at TA = 25 °C, as specified in the Absolute Maximum Ratings table. This value assumes adequate thermal management via PCB copper area or chassis mounting; derating applies linearly above 25 °C ambient, reaching zero at 150 °C per the published thermal curve. This steady-state limit governs continuous leakage power under normal operation of JANTX1N6160US/TR.
How does the radiation hardness of JANTX1N6160US/TR compare to commercial TVS diodes?
JANTX1N6160US/TR is inherently radiation-hard per Microsemi MicroNote 050, exhibiting no functional degradation or parameter shift up to 100 krad(Si) total ionizing dose-unlike standard commercial TVS devices, which typically lack radiation characterization. This makes JANTX1N6160US/TR suitable for satellite power systems and nuclear instrumentation where cumulative radiation exposure would compromise unprotected alternatives. Radiation performance is an intrinsic property of JANTX1N6160US/TR's hermetic glass construction and bond structure.
JANTX1N6160US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 42.6V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 19.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6160US/TR FAQ
1.How can I place an order for JANTX1N6160US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6160US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6160US/TR reliable?
The price and inventory of JANTX1N6160US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6160US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6160US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6160US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6160US/TR?
JANTX1N6160US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6160US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6160US/TR?
For technical support, including JANTX1N6160US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6160US/TR requirements.
6.How does Aetrix verify that JANTX1N6160US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6160US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6160US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6160US/TR?
All JANTX1N6160US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6160US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6160US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6160US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6160US/TR Tags
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